JP2016121403A5 - - Google Patents
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- JP2016121403A5 JP2016121403A5 JP2016040969A JP2016040969A JP2016121403A5 JP 2016121403 A5 JP2016121403 A5 JP 2016121403A5 JP 2016040969 A JP2016040969 A JP 2016040969A JP 2016040969 A JP2016040969 A JP 2016040969A JP 2016121403 A5 JP2016121403 A5 JP 2016121403A5
- Authority
- JP
- Japan
- Prior art keywords
- introducing
- germanium
- steps
- film
- remove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052732 germanium Inorganic materials 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- 238000010926 purge Methods 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000006227 byproduct Substances 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 2
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000002243 precursor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361810919P | 2013-04-11 | 2013-04-11 | |
| US61/810,919 | 2013-04-11 | ||
| US14/245,403 US9214630B2 (en) | 2013-04-11 | 2014-04-04 | Method of making a multicomponent film |
| US14/245,403 | 2014-04-04 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014082211A Division JP5902743B2 (ja) | 2013-04-11 | 2014-04-11 | 多成分膜の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016121403A JP2016121403A (ja) | 2016-07-07 |
| JP2016121403A5 true JP2016121403A5 (enExample) | 2016-12-28 |
| JP6371322B2 JP6371322B2 (ja) | 2018-08-08 |
Family
ID=50488987
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014082211A Active JP5902743B2 (ja) | 2013-04-11 | 2014-04-11 | 多成分膜の製造方法 |
| JP2016040969A Active JP6371322B2 (ja) | 2013-04-11 | 2016-03-03 | 多成分膜の製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014082211A Active JP5902743B2 (ja) | 2013-04-11 | 2014-04-11 | 多成分膜の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9214630B2 (enExample) |
| EP (1) | EP2789712B1 (enExample) |
| JP (2) | JP5902743B2 (enExample) |
| KR (2) | KR101634742B1 (enExample) |
| CN (1) | CN104099578B (enExample) |
| TW (1) | TWI507562B (enExample) |
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| US9214630B2 (en) * | 2013-04-11 | 2015-12-15 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
| WO2016061524A1 (en) * | 2014-10-17 | 2016-04-21 | Dickey Eric R | Deposition of high-quality mixed oxide barrier films |
| JP2017533995A (ja) * | 2014-10-17 | 2017-11-16 | ロータス アプライド テクノロジー エルエルシーＬｏｔｕｓ Ａｐｐｌｉｅｄ Ｔｅｃｈｎｏｌｏｇｙ， Ｌｌｃ | 混合酸化バリア膜の高速堆積 |
| CN104362298B (zh) | 2014-12-03 | 2018-11-06 | 京东方科技集团股份有限公司 | 一种电极片及其制备方法、储能装置 |
| CN104392931B (zh) * | 2014-12-03 | 2018-06-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
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| CN112429703B (zh) * | 2019-08-26 | 2023-03-10 | 天津大学 | 一种二维层状碲掺杂锗烷及制备方法 |
| US11716861B2 (en) | 2020-12-15 | 2023-08-01 | Micron Technology, Inc. | Electrically formed memory array using single element materials |
| CN113611798B (zh) * | 2021-07-02 | 2023-08-29 | 深圳大学 | 多层相变薄膜及其相变存储器单元的制备方法 |
| CN113604906B (zh) * | 2021-07-07 | 2023-05-12 | 哈尔滨工程大学 | 一种静电直写的微纳光相变纤维及其制备方法和应用 |
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| KR102819579B1 (ko) * | 2022-12-06 | 2025-06-12 | 한국화학연구원 | 신규한 저마늄 전구체, 이를 포함하는 박막증착용 조성물 및 이를 채용하는 박막의 제조방법 |
| EP4638363A1 (en) * | 2022-12-23 | 2025-10-29 | Umicore AG & Co. KG | Inorganic compounds |
| US20240287677A1 (en) * | 2023-02-13 | 2024-08-29 | Micron Technology, Inc. | Atomic layer deposition using tin-based or germanium-based precursors |
| IL322598A (en) | 2023-02-24 | 2025-10-01 | Adeka Corp | Method for producing a thin layer and raw material for forming a thin layer |
| US20250059646A1 (en) * | 2023-08-15 | 2025-02-20 | Micron Technology, Inc. | Methods for depositing germanium films by atomic layer deposition |
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| KR20140063684A (ko) | 2011-08-19 | 2014-05-27 | 도쿄엘렉트론가부시키가이샤 | Ge - Sb - Te막의 성막 방법, Ge - Te막의 성막 방법, Sb - Te막의 성막 방법 및 프로그램 |
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| US9214630B2 (en) * | 2013-04-11 | 2015-12-15 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
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2014
- 2014-04-04 US US14/245,403 patent/US9214630B2/en active Active
- 2014-04-11 EP EP14164386.6A patent/EP2789712B1/en not_active Not-in-force
- 2014-04-11 KR KR1020140043785A patent/KR101634742B1/ko active Active
- 2014-04-11 TW TW103113480A patent/TWI507562B/zh active
- 2014-04-11 CN CN201410146690.1A patent/CN104099578B/zh active Active
- 2014-04-11 JP JP2014082211A patent/JP5902743B2/ja active Active
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2015
- 2015-11-13 US US14/940,340 patent/US9543517B2/en active Active
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2016
- 2016-03-03 JP JP2016040969A patent/JP6371322B2/ja active Active
- 2016-06-15 KR KR1020160074555A patent/KR102193609B1/ko active Active