CN104392931B - 薄膜晶体管及其制备方法、阵列基板、显示装置 - Google Patents

薄膜晶体管及其制备方法、阵列基板、显示装置 Download PDF

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CN104392931B
CN104392931B CN201410727563.0A CN201410727563A CN104392931B CN 104392931 B CN104392931 B CN 104392931B CN 201410727563 A CN201410727563 A CN 201410727563A CN 104392931 B CN104392931 B CN 104392931B
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CN104392931A (zh
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李延钊
王龙
乔勇
卢永春
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BOE Technology Group Co Ltd
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Abstract

本发明涉及薄膜晶体管技术领域，公开一种薄膜晶体管及其制备方法、一种阵列基板以及一种显示装置，其中，薄膜晶体管的制备方法中，制备有源层的方法包括：形成锗薄膜，并通过构图工艺形成有源层的图形；利用功能化元素对锗薄膜进行拓扑化处理，以获得具有拓扑半导体特性的有源层。通过上述薄膜晶体管的制备方法得到的薄膜晶体管的载流子迁移率较高，性能较好。

Description

薄膜晶体管及其制备方法、阵列基板、显示装置
技术领域
本发明涉及薄膜晶体管技术领域，特别涉及一种薄膜晶体管及其制备方法、一种阵列基板以及一种显示装置。
背景技术
目前显示行业的发展对薄膜晶体管(TFT)特性的需求日益提高，高分辨率液晶显示屏(LCD)和大尺寸有源矩阵有机电致发光二级管显示屏(AMOLED)需要阵列基板的TFT器件有较大的开态电流和很高的开关比，因此，TFT器件的载流子迁移率越高越好。然而，目前TFT的迁移率仍普遍偏低(约为10cm2V-1s-1)，不能满足技术日益发展的需求。
发明内容
本发明提供了一种薄膜晶体管及其制备方法、一种阵列基板以及一种显示装置，其中，通过上述薄膜晶体管的制备方法得到的薄膜晶体管的载流子迁移率较高。
为达到上述目的，本发明提供以下技术方案：
一种薄膜晶体管的制备方法，所述制备方法中制备有源层的方法包括：
形成锗薄膜，并通过构图工艺形成有源层的图形；
利用功能化元素对锗薄膜进行拓扑化处理，以获得具有拓扑半导体特性的有源层。
上述薄膜晶体管的制备方法中，通过利用功能化元素对锗薄膜进行拓扑化处理，可以获得具有拓扑半导体特性的有源层，由于具有拓扑半导体特性，有源层的载流子迁移率很高，因此，采用上述薄膜晶体管的制备方法得到的薄膜晶体管的载流子迁移率较高。
因此，通过上述薄膜晶体管的制备方法得到的薄膜晶体管的载流子迁移率较高，性能较好。
优选地，所述形成锗薄膜，具体为：
采用原子层沉积方法形成锗薄膜；或者，
采用化学气相沉积方法形成锗薄膜；或者，
采用机械剥离转移方法形成锗薄膜；或者，
采用磁控溅射工艺形成锗薄膜；或者，
采用脉冲激光沉积工艺形成锗薄膜。
优选地，所述功能化元素为氟元素、氯元素、溴元素、或碘元素，所述利用功能化元素对锗薄膜进行拓扑化处理，以获得具有拓扑半导体特性的有源层，具体包括：
利用氟元素、氯元素、溴元素或者碘元素对锗薄膜进行卤化，以获得卤化锗薄膜。
优选地，所述对锗薄膜进行卤化，具体为：
采用气相方法对锗薄膜进行卤化；或者，
采用液相方法对锗薄膜进行卤化；或者，
采用表面修饰方法对锗薄膜进行卤化；或者，
采用等离子体处理方法对锗薄膜进行卤化。
优选地，采用气相方法对锗薄膜进行卤化时，所述对锗薄膜进行卤化，包括：
在溴气氛围下对锗薄膜进行卤化，气体压力为1～10帕，处理温度为50～400摄氏度，以形成溴化锗薄膜；或者，
在氯气氛围中、处理温度为50～400摄氏度环境下对锗薄膜退火10min，以形成具有拓扑半导体特性的氯化锗薄膜；或者，
在碘气氛围下对锗薄膜进行卤化，气体压力为1～10帕，处理温度为60～100摄氏度，以形成具有拓扑半导体特性的碘化锗薄膜。
优选地，采用气相方法对锗薄膜进行卤化时，所述对锗薄膜进行卤化，包括：在BCl3气体的氛围下对锗薄膜进行卤化，气体压力为1～10帕，处理温度为250～350摄氏度，并在卤素气体氛围下90～130摄氏度退火，以形成具有拓扑半导体特性的氯化锗薄膜。
优选地，采用液相方法对锗薄膜进行卤化时，所述对锗薄膜进行卤化，包括：在液溴氛围下对锗薄膜进行卤化，液溴浓度为1％～10％，处理温度为40～80摄氏度，以形成溴化锗薄膜。
优选地，采用表面修饰方法对锗薄膜进行卤化时，所述对锗薄膜进行卤化，包括：将含有卤素的有机胶体材料涂布在衬底上；将所述衬底涂有有机胶体材料的一侧贴压在锗薄膜上，以使得有机胶体中的卤素原子转移到锗薄膜上，从而实现锗薄膜的卤化。
优选地，采用等离子体处理方法对锗薄膜进行卤化时，所述对锗薄膜进行卤化，包括：在电感耦合等离子体或者反应离子蚀刻设备中，采用卤元素等离子体轰击锗薄膜表面，以使得卤元素等离子体吸附在锗薄膜中，从而实现锗薄膜的卤化。
优选地，所述功能化元素为氢元素、氮元素、硼元素或硫元素。
一种薄膜晶体管，包括有源层，所述有源层包括含锗元素的、具有拓扑半导体特性的薄膜。
优选地，所述薄膜为利用氟元素、氯元素、溴元素或者碘元素对锗薄膜进行卤化形成的卤化锗薄膜。
优选地，所述卤化锗薄膜的厚度为0.5～10nm。
优选地，
所述卤化锗薄膜为单原子层卤化锗薄膜；或者，
所述卤化锗薄膜为双原子层卤化锗薄膜；或者，
所述卤化锗薄膜为多原子层卤化锗薄膜。
优选地，所述薄膜为利用氢元素、氮元素、硼元素或硫元素对锗薄膜进行拓扑化处理形成的拓扑半导体薄膜。
优选地，所述薄膜晶体管为顶栅型结构或者底栅型结构。
一种阵列基板，包括上述技术方案提供的任意一种薄膜晶体管。
一种显示装置，包括上述技术方案提供的阵列基板。
附图说明
图1为本发明实施例提供的一种薄膜晶体管中有源层的制备方法流程图；
图2为本发明实施例提供的一种薄膜晶体管的结构示意图；
图3为本发明实施例提供的一种薄膜晶体管的制备方法流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参考图1和图2，图1为本发明实施例提供的一种薄膜晶体管中有源层的制备方法流程图；图2为本发明实施例提供的一种薄膜晶体管的结构示意图。
如图1和图2所示，本发明提供的薄膜晶体管的制备方法，该制备方法中制备有源层4的方法包括：
步骤S103，形成锗薄膜，并通过构图工艺形成有源层4的图形；
步骤S104，利用功能化元素对锗薄膜进行拓扑化处理，以获得具有拓扑半导体特性的有源层4。
上述薄膜晶体管的制备方法中，通过步骤S104，利用功能化元素对锗薄膜进行拓扑化处理，可以获得具有拓扑半导体特性的有源层4，由于具有拓扑半导体特性，有源层4的载流子迁移率很高，因此，采用上述薄膜晶体管的制备方法得到的薄膜晶体管的载流子迁移率较高。
因此，通过上述薄膜晶体管的制备方法得到的薄膜晶体管的载流子迁移率较高，性能较好。
如图1所示，一种具体的实施例中，步骤S103中，形成锗薄膜，具体可以通过以下方法实现：
方式一，采用原子层沉积方法形成锗薄膜。
方式二，采用化学气相沉积方法形成锗薄膜。
方式三，采用机械剥离转移方法形成锗薄膜。
方式四，采用磁控溅射工艺形成锗薄膜。
方式五，采用脉冲激光沉积工艺形成锗薄膜。
如图1所示，在上述实施例的基础上，一种具体的实施例中，步骤S104中，功能化元素具体可以为：氟元素、氯元素、溴元素或者碘元素；利用功能化元素对锗薄膜进行拓扑化处理，以获得具有拓扑半导体特性的有源层4，具体包括：
利用氟元素、氯元素、溴元素或者碘元素对锗薄膜进行卤化，以获得卤化锗薄膜。卤化锗薄膜具有典型的拓扑半导体的特性。
在上述实施例的基础上，一种具体的实施例中，
卤化锗薄膜可以为单原子层卤化锗薄膜，或者，双原子层卤化锗薄膜，或者，多原子层卤化锗薄膜。
在上述两个实施例的基础上，一种具体的实施例中，对锗薄膜进行卤化，可以通过以下方法实现：
方式一，采用气相方法对锗薄膜进行卤化。
具体地，上述方式一具体可以包括：
在溴气氛围下对锗薄膜进行卤化，在气体压力为1～10帕，处理温度为50～400摄氏度时，锗薄膜可以被溴气卤化形成具有拓扑半导体特性的溴化锗薄膜；或者，
在氯气氛围中、处理温度为50～400摄氏度环境下对锗薄膜退火10min，以形成具有拓扑半导体特性的氯化锗薄膜；或者，
在碘气氛围下对锗薄膜进行卤化，气体压力为1～10帕，处理温度为60～100摄氏度，以形成具有拓扑半导体特性的碘化锗薄膜；或者，
在BCl3气体的氛围下对锗薄膜进行卤化，气体压力为1～10帕，处理温度为250～350摄氏度，并在卤素气体氛围下90～130摄氏度退火，以形成具有拓扑半导体特性的氯化锗薄膜。
方式二，采用液相方法对锗薄膜进行卤化。
具体地，上述方式二具体可以包括：
在液溴氛围下对锗薄膜进行卤化，在液溴浓度为1％～10％，处理温度为40～80摄氏度时，锗薄膜可以被液溴卤化形成具有拓扑半导体特性的溴化锗薄膜。
方式三，采用表面修饰方法对锗薄膜进行卤化。
具体地，上述方式三具体可以包括：
采用含有卤素的有机胶体材料，首先将其涂布在一个衬底上，之后将该涂有有机薄膜的衬底贴压在已沉积锗薄膜的基板上，利用原子团的亲水或疏水特性，使得有机薄膜中相应的含卤素原子团转移到锗薄膜上，从而完成锗薄膜卤化过程。采用表面修饰工艺对锗薄膜进行拓扑化处理的反应可以在接近室温的条件下进行。
方式四，采用等离子体处理方法对锗薄膜进行卤化。
具体地，上述方式四具体可以包括：
采用氯气或四氯化碳作为反应气体，在电感耦合等离子体(ICP)、反应离子蚀刻(RIE)等设备中，卤元素等离子体会轰击锗薄膜表面，进而可能吸附在锗薄膜中，从而完成锗薄膜的卤化过程。采用等离子体处理工艺对锗薄膜进行拓扑化处理，处理温度较低，且可以使膜层表面更均匀。
如图2所示，采用上述任意方式制备形成薄膜晶体管(TFT)的有源层4后，在所需区域沉积、光刻、刻蚀出刻蚀阻挡层7，约50nm；之后采用溅射方法沉积源、漏电极金属Mo或者Al 200nm以形成源漏电极层5，并光刻、刻蚀出所需图形；之后再采用CVD方法制备SiO2钝化层6，约100～500nm，并进而光刻、刻蚀出连接孔，用于后续背板工艺的进行；TFT器件制备完成后，可在其上溅射沉积ITO电极，并光刻、刻蚀出像素区或亚像素区图案；最后在背板上旋涂沉积亚克力系材料并光刻、固化出像素界定层，约1.5um，最终形成TFT背板部分；背板完成后，可进一步用于制备OLED部分以最终形成AMOLED显示屏，具体包括：采用O2等离子体处理背板表面，进一步提升ITO的表面功函数，同时钝化表面层；有机材料及阴极金属薄层在OLED/EL-有机金属薄膜沉积高真空系统中热蒸发蒸镀；在1x10-5Pa的真空下依次热蒸发蒸镀空穴传输层(温度约170℃)、有机发光层及电子传输层(温度约190℃)和阴极(温度约900℃)，空穴传输层采用50纳米厚的NPB(N，N，-二苯基-N-N’二(1-萘基)-1，1’二苯基-4，4’-二胺)；发光层采用分像素区掩模蒸镀工艺进行，绿光、蓝光和红光像素区分别采用掺杂磷光材料的主体材料，25nm厚的CBP：(ppy)2Ir(acac)、CBP：FIrpic和CBP:Btp2Ir(acac)；电子传输层采用25nm厚的Bphen；阴极用约200纳米厚的Sm/Al层。制备而成的AMOLED器件为全彩发光，出光方式可以为底出光。
如图2所示，采用上述任意方式制备形成薄膜晶体管(TFT)的有源层4后，进而采用溅射方法沉积源、漏电极金属Mo或者Al 200nm以形成源漏电极层5，并光刻、刻蚀出所需图形；之后再采用CVD方法制备SiO2钝化层6，约100～500nm，并进而光刻、刻蚀出连接孔，用于后续背板工艺的进行；如再在TFT器件上溅射沉积ITO电极，并光刻、刻蚀出像素区或亚像素区图案，可最终形成TFT背板部分；该背板可用于制备LCD显示屏，其后工艺包括光刻胶涂布及压印取向、Spacer制备和对应彩膜基板制备，以及进行对核、切割、灌晶和封胶工艺。制备而成的AMLCD器件可以为全彩发光。
在上述实施例的基础上，一种优选的实施例中，卤化锗薄膜的厚度的范围为0.5～10nm，即上述实施例的方式一中的溴化锗薄膜以及方式二中的氯化锗薄膜的厚度范围为0.5～10nm。
一种具体的实施例中，功能化元素还可以为氢元素、氮元素、硼元素或硫元素等非金属元素。
一种具体的实施例中，薄膜晶体管可以为顶栅型结构也可以为底栅型结构。
如图3所示，薄膜晶体管为底栅型结构时，在步骤S103中形成锗薄膜之前，还包括：
步骤S101，在衬底基板1上形成栅极金属层2，并通过构图工艺形成栅极图形；
步骤S102，在栅极金属层2上形成栅极绝缘层3。
在步骤S104中利用功能化元素对锗薄膜进行拓扑化处理，以获得具有拓扑半导体特性的有源层4之后，还包括：
步骤S105，在有源层4上形成源漏电极层5；
步骤S106，在源漏电极层5上形成钝化层6。
如图2所示，栅极金属层的厚度为1～500nm；栅极金属层的材料可以为Mo，或者Al，或者Cr；栅极绝缘层的厚度为1～300nm；源漏电极层5的厚度为5～500nm；源漏电极层5的材料可以为Mo，或者Al，或者Cr；钝化层6的厚度为5～500nm。
当薄膜晶体管为顶栅型结构时，形成薄膜晶体管的具体步骤可以包括：制备缓冲层，在缓冲层上制备锗薄膜并对锗薄膜进行卤化以形成具有拓扑半导体特性的有源层；在有源层上沉积栅极绝缘层，在栅极绝缘层上沉积栅极金属层并图形化，沉积绝缘层以隔绝栅极金属层和源漏金属层；沉积源漏金属层并图形化，以形成源漏电极；最后沉积钝化层。
如图2所示，本发明还提供一种薄膜晶体管，该薄膜晶体管包括有源层4，有源层4包括含锗元素的、具有拓扑半导体特性的薄膜。该薄膜可以为上述的卤化锗薄膜，例如溴化锗薄膜、氯化锗薄膜。上述薄膜晶体管的有源层4的材料具有拓扑半导体特性，因此，上述薄膜晶体管的载流子迁移率高，所以，上述薄膜晶体管的性能较好。
一种优选的实施例中，薄膜为利用氟元素、氯元素、溴元素或者碘元素对锗薄膜进行卤化形成的卤化锗薄膜。
在上述实施例的基础上，优选地，卤化锗薄膜的厚度为0.5～10nm，卤化锗薄膜可以为单原子层卤化锗薄膜、双原子层卤化锗薄膜或者多原子层卤化锗薄膜。
另一种优选的实施例中，薄膜为利用氢元素、氮元素、硼元素或硫元素对锗薄膜进行拓扑化处理形成的拓扑半导体薄膜。
在上述各实施例的基础上，一种具体的实施例中，薄膜晶体管为顶栅型结构或者底栅型结构。
在上述实施例的基础上，一种具体的实施例中，栅极金属层的厚度为1～500nm，栅极金属层的材料可以为Mo、Al或者Cr，和/或，源漏电极层的厚度为5～500nm，源漏电极层的材料为Mo、Al或者Cr。
本发明实施例对发明点进行简要介绍，不对薄膜晶体管的具体结构作限定，任何公开现有的薄膜晶体管都为本发明保护的范围。
本发明还提供一种阵列基板，该阵列基板包括上述任一实施例提供的薄膜晶体管。该阵列基板的薄膜晶体管的电子迁移率高，因此，其可以具有较大的开态电流和很高的开关比，所以，该阵列基板的开关性能好。
本发明还提供一种显示装置，该显示装置包括上述实施例提供的阵列基板。该显示装置的显示开关性能好，画面切换迅速。
显然，本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (6)

1.一种薄膜晶体管的制备方法，其特征在于，所述制备方法中制备有源层的方法包括：
形成锗薄膜，并通过构图工艺形成有源层的图形；
利用功能化元素对锗薄膜进行拓扑化处理，以获得具有拓扑半导体特性的有源层；所述功能化元素为氮元素、硼元素或硫元素。
2.根据权利要求1所述的制备方法，其特征在于，所述形成锗薄膜，具体为：
采用原子层沉积方法形成锗薄膜；或者，
采用化学气相沉积方法形成锗薄膜；或者，
采用机械剥离转移方法形成锗薄膜；或者，
采用磁控溅射工艺形成锗薄膜；或者，
采用脉冲激光沉积工艺形成锗薄膜。
3.一种薄膜晶体管，其特征在于，包括有源层，所述有源层包括含锗元素的、具有拓扑半导体特性的薄膜；所述薄膜为利用氮元素、硼元素或硫元素对锗薄膜进行拓扑化处理形成的拓扑半导体薄膜。
4.根据权利要求3所述的薄膜晶体管，其特征在于，所述薄膜晶体管为顶栅型结构或者底栅型结构。
5.一种阵列基板，其特征在于，包括权利要求3或4所述的薄膜晶体管。
6.一种显示装置，其特征在于，包括权利要求5所述的阵列基板。
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