CN103354243B - 一种薄膜晶体管、其制备方法及相关装置 - Google Patents

一种薄膜晶体管、其制备方法及相关装置 Download PDF

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CN103354243B
CN103354243B CN201310269381.9A CN201310269381A CN103354243B CN 103354243 B CN103354243 B CN 103354243B CN 201310269381 A CN201310269381 A CN 201310269381A CN 103354243 B CN103354243 B CN 103354243B
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film transistor
active layer
thin film
layer
pattern
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CN103354243A (zh
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李延钊
王刚
方金钢
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种薄膜晶体管、其制备方法及相关装置，在薄膜晶体管中的有源层采用非晶态磷化物半导体材料制备。由于磷化物半导体材料的载流子的迁移率比较高，因此，相对于现有的薄膜晶体管的有源层采用非晶硅、多晶硅、微晶硅或氧化物半导体材料制备，采用非晶态磷化物半导体材料制备薄膜晶体管的有源层，可以得到载流子迁移率较高的薄膜晶体管。

Description

一种薄膜晶体管、其制备方法及相关装置
技术领域
本发明涉及显示技术领域，尤其涉及一种薄膜晶体管、其制备方法及相关装置。
背景技术
随着平板显示行业的发展，对显示面板的要求越来越高，其中对面板中薄膜晶体管的迁移率也提出了更高的要求。目前，现有的薄膜晶体管（ThinFilmTransistor，TFT）一般为非晶硅薄膜晶体管，非晶硅薄膜晶体管即薄膜晶体管的有源层为非晶硅材料，非晶硅薄膜晶体管的载流子的迁移率较低，其电子迁移率为0.1-1cm2V-1s-1，不能适应目前显示行业的发展。因此开发了低温多晶硅（LTPS，LowTemperaturePolySilicon）薄膜晶体管和氧化物（Oxide）薄膜晶体管。
LTPS薄膜晶体管即薄膜晶体管的有源层为低温多晶硅材料，低温多晶硅是指在较低温度下将非晶硅转变为多晶硅，LTPS薄膜晶体管其载流子迁移率很高约为100-500cm2V-1s-1，但是其均匀性问题很难解决，因而在面向大尺寸面板的应用时，出现了很难克服的障碍。氧化物薄膜晶体管即薄膜晶体管的有源层为氧化物半导体材料，氧化物薄膜晶体管在保证较好的大尺寸均匀性的前提下，牺牲了部分迁移率，目前，氧化物薄膜晶体管在保证较好均匀性的前提下，可以做到其载流子迁移率为10cm2V-1s-1。但是随着平板显示技术的发展，氧化物薄膜晶体管的载流子的迁移率日渐不能满足需求。因此，目前的薄膜晶体管需要在良好均匀性的前提下进一步提高载流子迁移率。
发明内容
本发明实施例提供了一种薄膜晶体管、其制备方法及相关装置，用以获得载流子迁移率较高的薄膜晶体管。
本发明实施例提供的一种薄膜晶体管，包括：衬底基板，以及形成于所
述衬底基板上的栅极、有源层、源极和漏极；
所述有源层的材料为非晶态磷化物半导体材料。
本发明实施例提供的一种阵列基板，包括本发明实施例提供的薄膜晶体管。
本发明实施例提供的一种显示面板，包括本发明实施例提供的阵列基板。
本发明实施例提供的一种本发明实施例所提供的薄膜晶体管的制备方法，所述薄膜晶体管的有源层采用磁控溅射方式、脉冲激光沉积方式、化学气相沉积方式或溶液沉积方式制备。
本发明实施例的有益效果包括：
本发明实施例提供的一种薄膜晶体管、其制备方法及相关装置，在薄膜晶体管中的有源层采用非晶态磷化物半导体材料制备。由于磷化物半导体材料的载流子的迁移率比较高，因此，相对于现有的薄膜晶体管的有源层采用非晶硅、多晶硅、微晶硅或氧化物半导体材料制备，采用非晶态磷化物半导体材料制备薄膜晶体管的有源层，可以得到载流子迁移率较高的薄膜晶体管。
附图说明
图1为本发明实施例提供的薄膜晶体管的结构示意图；
图2为本发明实施例提供的阵列基板的结构示意图；
图3a为本发明实施例提供的薄膜晶体管的转移特性曲线示意图；
图3b为本发明实施例提供的薄膜晶体管的输出特性曲线示意图；
图4为现有技术的非晶硅薄膜晶体管的输出特性曲线示意图。
具体实施方式
下面结合附图，对本发明实施例提供的薄膜晶体管、其制备方法及相关装置的具体实施方式进行详细地说明。
附图中各层薄膜厚度和形状不反映薄膜晶体管的真实比例，目的只是示意说明本发明内容。
本发明实施例提供的一种薄膜晶体管，如图1所示，包括：衬底基板1，以及形成于衬底基板1上的栅极2、有源层3、漏极4和源极5；其中，
有源层3的材料为非晶态磷化物半导体材料。
本发明实施例提供的上述薄膜晶体管中，有源层采用非晶态磷化物半导体材料制备。由于磷化物半导体材料的载流子的迁移率比较高，因此，相对于现有的薄膜晶体管的有源层材料为非晶硅、多晶硅、微晶硅或氧化物半导体材料制备，采用非晶态磷化物半导体材料制备薄膜晶体管的有源层，可以得到载流子迁移率较高的薄膜晶体管。
具体地，在具体实施时，在本发明实施例提供的上述薄膜晶体管中，有源层的厚度一般控制在5nm-200nm之间为佳。
具体地，在具体实施时，在本发明实施例提供的上述薄膜晶体管中，有源层可以为非晶态二元磷化物半导体材料，例如：InP、Zn3P2、Ga3P2，也可以为非晶体态多元磷化物半导体材料，例如：InGaZnP或InGaZnOP，在此不做限定。
进一步地，在本发明实施例提供的上述薄膜晶体管中，有源层还可以为非晶态化合物掺杂磷半导体材料，在具体实施时，可以通过配比调整在非晶态化合物半导体材料中掺杂磷元素的比例，在此不做详述。
具体地，本发明实施例提供的上述薄膜晶体管TFT器件可以适用于各种类型结构，即TFT器件可以为底栅型结构、顶栅型结构、交叠型结构、反交叠型结构、共面型结构或反共面型结构，在此不做限定。在图1中是以底栅型结构的薄膜晶体管为例进行说明的。
具体地，在具体实施时，在本发明实施例提供的上述薄膜晶体管中，衬底基板可以为透明材料，例如：玻璃或石英，衬底基板也可以为其它不透明材料，例如：陶瓷或金属，在此不做限定。
进一步地，在本发明实施例提供的上述薄膜晶体管中，栅极可以为金属材料，例如：Mo、Al、或Cr，也可以为合金材料，或者还可以为复合金属层，例如：Mo/Al，在此不做限定。在具体实施时，栅极的厚度一般控制在1nm-500nm之间为佳。
进一步地，本发明实施例提供的薄膜晶体管，如图1所示，还可以包括：形成于栅极2与有源层3之间的栅极绝缘层6。具体地，栅极绝缘层6可以为氧化硅、氮化硅等绝缘材料，栅极绝缘层6的厚度一般控制在1nm-300nm之间为佳。
进一步地，本发明实施例提供的薄膜晶体管，如图1所示，还可以包括：形成于有源层3与漏极4和源极5之间的刻蚀阻挡层7。具体地，刻蚀阻挡层7可以为氧化硅、氮化硅或者有机绝缘材料，刻蚀阻挡层7的厚度一般控制在5nm-500nm之间为佳。
具体地，在本发明实施例提供的上述薄膜晶体管中，源极和漏极可以分别为金属材料，例如：Mo、Al、或Cr，也可以为合金材料，或者还可以为复合金属层，例如：Mo/Al，在此不做限定。更近一步地，在具体实施时，源极和漏极的厚度一般分别控制在1nm-500nm之间为佳。
基于同一发明构思，本发明实施例还提供了一种阵列基板，包括本发明实施例提供的上述薄膜晶体管，该阵列基板的实施可以参见上述薄膜晶体管的实施例，重复之处不再赘述。
在具体实施时，在本发明实施例提供的阵列基板中，如图2所示，可以具体包括：形成于薄膜晶体管上的像素电极8，该像素电极8与源极5相连。
进一步地，在上述阵列基板中，如图2所示，还可以包括：形成于源极5和像素电极8之间的钝化层9，像素电极8通过钝化层9中的过孔与源极5相连。具体地，在具体实施时，钝化层9可以为氧化硅、氮化硅或有机材料等绝缘材料，钝化层9的厚度一般控制在5nm-500nm之间为佳。
更进一步地，在具体实施时，本发明实施例提供的上述阵列基板，根据需要，还可以包括位于衬底基板与栅极之间的缓冲层，位于像素电极上的平坦化层、像素界定层等，在此不做限定。
具体地，本发明实施提供的上述阵列基板可以应用于液晶显示（LiquidCrystalDisplay，LCD）面板，当然也可以应用于有机发光二极管（OrganicLightEmittingDiode，OLED）显示面板，在此不做限定。
基于同一发明构思，本发明实施例还提供了一种显示面板，包括本发明实施例提供的上述阵列基板，该显示面板可以是液晶显示面板，也可以是OLED显示面板，对于显示面板的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本发明的限制。该显示面板的实施可以参见上述阵列基板的实施例，重复之处不再赘述。
在本发明实施例提供的显示面板为OIED显示面板时，在具体实施时，在OLED显示面板中，还可以包括：依次形成于阵列基板上的阳极、空穴传输层、有机发光层、电子传输层以及阴极，当然也可以根据需要设置其他的膜层，在此不做限定。
基于同一发明构思，本发明实施例还提供了上述薄膜晶体管的制备方法，在制备薄膜晶体管时，有源层采用非晶态磷化物半导体材料制备，具体可以采用磁控溅射方式、脉冲激光沉积方式、化学气相沉积（Chemicalvapordeposition，CVD）方式或溶液沉积方式来进行有源层的制备。
在具体实施时，当有源层的材料为InGaZnP时，可以采用磁控溅射方式制备有源层的图形，具体包括：在压力为1Pa-10Pa的氧气氛围条件下，采用磁控溅射方式沉积InGaZnP薄膜；较佳地，InGaZnP薄膜的厚度一般控制在约50nm为佳；然后在温度为100摄氏度-600摄氏度的空气氛围条件下对InGaZnP薄膜退火1小时；最后对InGaZnP薄膜进行构图，形成有源层的图形。
具体地，当有源层的材料为InP时，可以采用脉冲激光沉积方式制备有源层的图形，具体包括：在压力为1Pa-10Pa的氧气氛围条件下，采用脉冲激光沉积方式沉积InP薄膜；较佳地，InP薄膜的厚度一般控制在约50nm为佳；然后在温度为100摄氏度-600摄氏度的空气氛围条件下，对InP薄膜退火10分钟；最后对InP薄膜进行构图，形成有源层的图形。具体地，采用上述方式制备出的非晶态InP薄膜晶体管的工作性能曲线如图3a和图3b所示，从图中可以看出薄膜晶体管的载流子的迁移率较高。该器件还未经过优化，其载流子的迁移率已达到非晶硅薄膜晶体管的水平，图4为现有的非晶硅薄膜晶体管的输出特性曲线示意图。
进一步地，上述制备方法制备出的薄膜晶体管可以应用于LCD面板，当然也可以应用于OLED显示面板，在此不做限定。下面通过两个实例对薄膜晶体管的制备工艺的各步骤进行详细的说明。在两个实例中都是以底栅型结构的薄膜晶体管为例进行说明的。
实例一：
薄膜晶体管应用于有源有机发光二极管（ActiveMatrixOrganicLightEmittingDiode，AMOLED）显示面板，其制备方法具体包括以下步骤：
S01、在衬底基板上形成栅极的图形；
在具体实施时，栅极多采用磁控溅射的方式来制备，通过构图工艺形成栅极的图形。具体地，栅极的材料可以为Mo。进一步地，栅极的厚度可以控制在200nm左右。
进一步地，在步骤S01制备栅极的图形之前，根据需要还可以包括：在衬底基板上形成缓冲层的步骤；
在具体实施时，可以先将衬底基板采用标准方法清洗，之后采用CVD方式在衬底基板上沉积缓冲层。具体地，缓冲层的材料可以为SiO2。进一步地，缓冲层的厚度一般控制在200nm为佳。
S02、在栅极上形成栅极绝缘层；
在具体实施时，栅极绝缘层多采用CVD方式来制备。具体地，栅极绝缘层的材料可以为SiO2。进一步地，栅极绝缘层的厚度可以控制在150nm左右。
S03、在栅极绝缘层上形成有源层的图形；
在具体实施时，有源层的材料具体可以为InGaZnP，可以采用磁控溅射方式制备有源层的图形：首先在压力为1Pa-10Pa的氧气氛围条件下，采用磁控溅射方式沉积InGaZnP薄膜；较佳地，InGaZnP薄膜的厚度可以控制在约50nm；然后在温度为100摄氏度-600摄氏度的空气氛围条件下对InGaZnP薄膜退火1小时；最后通过构图工艺形成有源层的图形。
S04、在有源层上形成刻蚀阻挡层的图形；
在具体实施时，刻蚀阻挡层多采用CVD方式来制备，并通过构图工艺形成刻蚀阻挡层的图形。具体地，刻蚀阻挡层的材料可以为SiO2。进一步地，刻蚀阻挡层的厚度一般控制在50nm为佳。
S05、在刻蚀阻挡层上形成源极和漏极的图形；
在具体实施时，源极和漏极多采用溅射方式来制备，并通过一次构图工艺形成源极和漏极的图形。具体地，源极和漏极的材料可以为复合金属层Mo/Al。进一步地，源极和漏极厚度一般分别控制在200nm为佳。
进一步地，形成薄膜晶体管之后，需要通过以下步骤形成AMOLED的发光结构，具体包括以下步骤：
S06、在源极和漏极上形成钝化层的图形；
在具体实施时，钝化层多采用CVD方式来制备。具体地，钝化层的材料可以为SiO2，并通常采用干法刻蚀的方式来形成钝化层中连接将要形成的像素电极和源极的过孔。进一步地，钝化层的厚度一般控制在100nm-500nm之间为佳。
S07、在钝化层上形成像素电极的图形，像素电极通过钝化层中的过孔与源极相连；
在具体实施时，像素电极多采用溅射方式来制备，并通过构图工艺形成像素电极的图形。具体地，像素电极的材料可以采用铟锡氧化物（ITO）。
S08、在像素电极上旋涂沉积亚克力系材料的像素界定层，然后通过构图工艺形成像素界定层的图形。具体地，像素界定层的厚度可以控制在1.5μm左右。
具体地，在具体实施时，在步骤S08结束之后，还可以包括以下的步骤：
S09、形成空穴传输层；
在具体实施时，空穴传输层在1x10-5Pa且约170摄氏度的OLED或EL有机金属薄膜沉积高真空系统中热蒸发蒸镀制备，具体地，空穴传输层的材料可以为NPB(N,N’-二苯基-N-N’二(1-萘基)-1,1’二苯基-4,4’-二胺)。进一步地，空穴传输层的厚度一般控制在50nm为佳。
S10、在空穴传输层上形成有机发光层的图形；
在具体实施时，有机发光层在1x10-5Pa的OLED或电致发光（EL，Electrolumiescent）有机金属薄膜沉积高真空系统中热蒸发蒸镀制备，并可以采用分像素区掩模蒸镀工艺形成依次排列的绿光、蓝光、红光亚像素区，具体地，有机发光层的绿光、蓝光和红光像素区的材料可以分别采用掺杂磷光材料的主体材料CBP:(ppy)2Ir(acac)、CBP:FIrpic和CBP:Btp2Ir(acac)。进一步地，有机发光层的厚度一般控制在25nm为佳。
S11、在有机发光层上形成电子传输层；
在具体实施时，电子传输层在1x10-5Pa且约190摄氏度的OLED或EL有机金属薄膜沉积高真空系统中热蒸发蒸镀制备，具体地，电子传输层的材料可以为Bphen。进一步地，电子传输层的厚度一般控制在25nm为佳。
S12、在电子传输层上形成阴极；
在具体实施时，阴极在1x10-5Pa且约900摄氏度的OLED或EL有机金属薄膜沉积高真空系统中热蒸发蒸镀制备，具体地，阴极的材料可以为复合金属层Sm/Al。进一步地，阴极的厚度一般控制在约200nm为佳。
实例二：
薄膜晶体管应用于LCD显示面板，其制备方法具体包括以下步骤：
S01、在衬底基板上形成栅极的图形；
在具体实施时，栅极多采用磁控溅射的方式来制备，通过构图工艺形成栅极的图形。具体地，栅极的材料可以为Mo。进一步地，栅极的厚度可以控制在200nm左右。
进一步地，在步骤S01制备栅极的图形之前，根据需要还可以包括：在衬底基板上形成缓冲层的步骤；
在具体实施时，可以先将衬底基板采用标准方法清洗，之后采用CVD方式在衬底基板上沉积缓冲层。具体地，缓冲层的材料可以为SiO2。进一步地，缓冲层的厚度一般控制在200nm为佳。
S02、在栅极上形成栅极绝缘层；
在具体实施时，栅极绝缘层多采用CVD方式来制备。具体地，栅极绝缘层的材料可以为SiO2。进一步地，栅极绝缘层的厚度可以控制在150nm左右。
S03、在栅极绝缘层上形成有源层的图形；
在具体实施时，有源层的材料具体可以为InP，可以采用脉冲激光沉积方式制备有源层的图形：在具体操作时，可以将基板送入真空度为（1～10）*10-4Pa的真空腔内，然后通入5～30sccm的氧气（O2），例如5sccm、10sccm、20sccm或30sccm，将真空腔的压力控制到0.5～1.5Pa，例如0.5Pa、1Pa或1.5Pa；，采用脉冲频率为1～10Hz、脉冲能量为200～500mJ的脉冲激光，例如脉冲激光的频率为5Hz、脉冲能量为350mJ，沉积InP薄膜1～5分钟，沉积时间例如可以为1分钟、2分钟、3分钟或5分钟；较佳地，InP薄膜的厚度可以控制在约30～80nm，例如可以为30nm、50nm或80nm；然后在温度为100摄氏度-600摄氏度的空气氛围条件下，例如温度可以为100摄氏度、300摄氏度、500摄氏度或600摄氏度，对InP薄膜退火5～20分钟，退火的时间可以为5分钟、10分钟、15分钟或20分钟；最后通过构图工艺形成有源层的图形。
S04、在有源层上形成刻蚀阻挡层的图形；
在具体实施时，刻蚀阻挡层多采用CVD方式来制备，并通过构图工艺形成刻蚀阻挡层的图形。具体地，刻蚀阻挡层的材料可以为SiO2。进一步地，刻蚀阻挡层的厚度一般控制在50nm为佳。
S05、在刻蚀阻挡层上形成源极和漏极的图形；
在具体实施时，源极和漏极多采用溅射方式来制备，并通过一次构图工艺形成源极和漏极的图形。具体地，源极和漏极的材料可以为复合金属层Mo/Al。进一步地，源极和漏极厚度一般分别控制在200nm为佳。
进一步地，形成薄膜晶体管之后，需要通过以下步骤形成LCD的像素结构，具体包括以下步骤：
S06、在源极和漏极上形成钝化层的图形；
在具体实施时，钝化层多采用CVD方式来制备。具体地，钝化层的材料可以为SiO2，并通常采用干法刻蚀的方式来形成钝化层中连接将要形成的像素电极和源极的过孔。进一步地，钝化层的厚度一般控制在100nm-500nm之间为佳。
S07、在钝化层上形成像素电极的图形，像素电极通过钝化层中的过孔与源极相连；
在具体实施时，像素电极多采用溅射方式来制备，并通过构图工艺形成像素电极的图形。具体地，像素电极的材料可以采用铟锡氧化物（ITO）。
在完成步骤S07之后，还需要进行PI涂布、压印取向以及Spacer制备、以及与TFT阵列基板相对设置的彩膜基板的制备，并将彩膜基板和TFT阵列基板对盒处理，灌注液晶分子，涂覆封框胶等步骤。这些工艺都属于现有技术，其具体制备工艺在此不再赘述。
本发明实施例提供的一种薄膜晶体管、其制备方法及相关装置，在薄膜晶体管中的有源层采用非晶态磷化物半导体材料制备。由于磷化物半导体材料的载流子的迁移率比较高，因此，相对于现有的薄膜晶体管的有源层采用非晶硅、多晶硅、微晶硅或氧化物半导体材料制备，采用非晶态磷化物半导体材料制备薄膜晶体管的有源层，可以得到载流子迁移率较高的薄膜晶体管。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (1)

1.一种薄膜晶体管的制备方法，包括在衬底基板上栅极、有源层、源极和漏极的图形；其特征在于：所述有源层的材料为非晶态磷化物半导体材料；
当所述有源层的材料为InGaZnP时，采用磁控溅射方式制备所述有源层的图形，具体包括：在压力为1Pa-10Pa的氧气氛围条件下，沉积InGaZnP薄膜；在100摄氏度-600摄氏度的空气氛围条件下，对所述InGaZnP薄膜退火1小时；对所述InGaZnP薄膜进行构图，形成所述有源层的图形；
当所述有源层的材料为InP时，采用脉冲激光沉积方式制备所述有源层的图形，具体包括：在压力为1Pa-10Pa的氧气氛围条件下，沉积InP薄膜；在100摄氏度-600摄氏度的空气氛围条件下，对所述InP薄膜退火10分钟；对所述InP薄膜进行构图，形成所述有源层的图形。
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