JP2009536986A5 - - Google Patents

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Publication number
JP2009536986A5
JP2009536986A5 JP2009509899A JP2009509899A JP2009536986A5 JP 2009536986 A5 JP2009536986 A5 JP 2009536986A5 JP 2009509899 A JP2009509899 A JP 2009509899A JP 2009509899 A JP2009509899 A JP 2009509899A JP 2009536986 A5 JP2009536986 A5 JP 2009536986A5
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film
temperature
nitrogen
doping step
germanium
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JP2009509899A
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Priority claimed from PCT/US2007/063832 external-priority patent/WO2007133837A2/en
Publication of JP2009536986A publication Critical patent/JP2009536986A/ja
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JP2009509899A 2006-05-12 2007-03-12 相変化メモリ材料の低温堆積 Withdrawn JP2009536986A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80010206P 2006-05-12 2006-05-12
PCT/US2007/063832 WO2007133837A2 (en) 2006-05-12 2007-03-12 Low temperature deposition of phase change memory materials

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JP2009536986A JP2009536986A (ja) 2009-10-22
JP2009536986A5 true JP2009536986A5 (enExample) 2010-04-30

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JP2009509899A Withdrawn JP2009536986A (ja) 2006-05-12 2007-03-12 相変化メモリ材料の低温堆積

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US (3) US8288198B2 (enExample)
EP (2) EP2302094A1 (enExample)
JP (1) JP2009536986A (enExample)
KR (1) KR101499260B1 (enExample)
CN (1) CN101473382A (enExample)
SG (1) SG171683A1 (enExample)
TW (1) TW200801222A (enExample)
WO (1) WO2007133837A2 (enExample)

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