KR101499260B1 - 상 변화 메모리 재료의 저온 증착 - Google Patents

상 변화 메모리 재료의 저온 증착 Download PDF

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KR101499260B1
KR101499260B1 KR1020087030213A KR20087030213A KR101499260B1 KR 101499260 B1 KR101499260 B1 KR 101499260B1 KR 1020087030213 A KR1020087030213 A KR 1020087030213A KR 20087030213 A KR20087030213 A KR 20087030213A KR 101499260 B1 KR101499260 B1 KR 101499260B1
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germanium
precursor
deposition
ligand
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KR20090018629A (ko
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제프리 에프 로더
토마스 에이치 바움
브라이언 씨 핸드릭스
그레고리 티 스타우프
청잉 추
윌리엄 헝크스
티안니우 첸
마티아스 스텐더
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어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/30—Germanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
KR1020087030213A 2006-05-12 2007-03-12 상 변화 메모리 재료의 저온 증착 Expired - Fee Related KR101499260B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80010206P 2006-05-12 2006-05-12
US60/800,102 2006-05-12
PCT/US2007/063832 WO2007133837A2 (en) 2006-05-12 2007-03-12 Low temperature deposition of phase change memory materials

Publications (2)

Publication Number Publication Date
KR20090018629A KR20090018629A (ko) 2009-02-20
KR101499260B1 true KR101499260B1 (ko) 2015-03-05

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Country Status (8)

Country Link
US (3) US8288198B2 (enExample)
EP (2) EP2018642A4 (enExample)
JP (1) JP2009536986A (enExample)
KR (1) KR101499260B1 (enExample)
CN (1) CN101473382A (enExample)
SG (1) SG171683A1 (enExample)
TW (1) TW200801222A (enExample)
WO (1) WO2007133837A2 (enExample)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2018642A4 (en) 2006-05-12 2009-05-27 Advanced Tech Materials LOW TEMPERATURE DEPOSITION OF STORAGE MATERIALS
KR100757415B1 (ko) * 2006-07-13 2007-09-10 삼성전자주식회사 게르마늄 화합물 및 그 제조 방법, 상기 게르마늄 화합물을이용한 상변화 메모리 장치 및 그 형성 방법
CN102352488B (zh) 2006-11-02 2016-04-06 诚实公司 对于金属薄膜的cvd/ald有用的锑及锗复合物
KR100871692B1 (ko) * 2006-11-07 2008-12-08 삼성전자주식회사 저온 증착용 금속 전구체, 그를 사용한 금속 박막 형성방법 및 상변화 메모리 소자 제조 방법
KR101275799B1 (ko) * 2006-11-21 2013-06-18 삼성전자주식회사 저온 증착이 가능한 게르마늄 전구체를 이용한 상변화층형성방법 및 이 방법을 이용한 상변화 메모리 소자의 제조방법
US8377341B2 (en) * 2007-04-24 2013-02-19 Air Products And Chemicals, Inc. Tellurium (Te) precursors for making phase change memory materials
KR100888617B1 (ko) * 2007-06-15 2009-03-17 삼성전자주식회사 상변화 메모리 장치 및 그 형성 방법
KR101593352B1 (ko) * 2007-06-28 2016-02-15 인티그리스, 인코포레이티드 이산화규소 간극 충전용 전구체
TWI471449B (zh) 2007-09-17 2015-02-01 Air Liquide 用於ｇｓｔ膜沈積之碲前驅物
US20090087561A1 (en) * 2007-09-28 2009-04-02 Advanced Technology Materials, Inc. Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
KR101458953B1 (ko) 2007-10-11 2014-11-07 삼성전자주식회사 Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
WO2009059237A2 (en) * 2007-10-31 2009-05-07 Advanced Technology Materials, Inc. Novel bismuth precursors for cvd/ald of thin films
SG152203A1 (en) * 2007-10-31 2009-05-29 Advanced Tech Materials Amorphous ge/te deposition process
US8318252B2 (en) * 2008-01-28 2012-11-27 Air Products And Chemicals, Inc. Antimony precursors for GST films in ALD/CVD processes
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
KR101429071B1 (ko) 2008-04-18 2014-08-13 주식회사 원익아이피에스 Ｇｅ-Ｓｂ-Ｔｅ 화합물 박막 형성방법
KR101515544B1 (ko) * 2008-04-18 2015-04-30 주식회사 원익아이피에스 칼코제나이드 박막 형성방법
US20090263934A1 (en) * 2008-04-22 2009-10-22 Samsung Electronics Co., Ltd. Methods of forming chalcogenide films and methods of manufacturing memory devices using the same
US9175390B2 (en) 2008-04-25 2015-11-03 Asm International N.V. Synthesis and use of precursors for ALD of tellurium and selenium thin films
US8674127B2 (en) 2008-05-02 2014-03-18 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
US8765223B2 (en) * 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US8507040B2 (en) 2008-05-08 2013-08-13 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
JP2011522120A (ja) 2008-05-29 2011-07-28 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 膜堆積用のテルル前駆体
US8802194B2 (en) * 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US20110180905A1 (en) * 2008-06-10 2011-07-28 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8372483B2 (en) * 2008-06-27 2013-02-12 Asm International N.V. Methods for forming thin films comprising tellurium
JP5466838B2 (ja) * 2008-07-09 2014-04-09 ピーエスフォー ルクスコ エスエイアールエル 相変化固体メモリの記録材料及び相変化固体メモリ
US8236381B2 (en) 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
US7888165B2 (en) 2008-08-14 2011-02-15 Micron Technology, Inc. Methods of forming a phase change material
KR101521998B1 (ko) * 2008-09-03 2015-05-21 삼성전자주식회사 상변화막 형성방법
US7834342B2 (en) 2008-09-04 2010-11-16 Micron Technology, Inc. Phase change material and methods of forming the phase change material
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
KR101120065B1 (ko) * 2009-01-08 2012-03-23 솔브레인 주식회사 신규의 아미딘 유도체를 가지는 게르마늄 화합물 및 이의 제조 방법
KR20100107345A (ko) 2009-03-25 2010-10-05 삼성전자주식회사 반도체 메모리 장치
KR101559912B1 (ko) 2009-03-31 2015-10-13 삼성전자주식회사 상변화 메모리 소자의 형성방법
TW201106513A (en) 2009-05-22 2011-02-16 Advanced Tech Materials Low temperature GST process
JP2010287615A (ja) * 2009-06-09 2010-12-24 Tokyo Electron Ltd Ｇｅ−Ｓｂ−Ｔｅ膜の成膜方法および記憶媒体
JP2011054935A (ja) * 2009-06-19 2011-03-17 Rohm & Haas Electronic Materials Llc ドーピング方法
KR101602007B1 (ko) * 2009-07-02 2016-03-09 인티그리스, 인코포레이티드 유전체-충전된 중공 ｇｓｔ 구조
US8691668B2 (en) 2009-09-02 2014-04-08 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Dihalide germanium(II) precursors for germanium-containing film depositions
CN102687243B (zh) 2009-10-26 2016-05-11 Asm国际公司 用于含va族元素的薄膜ald的前体的合成和使用
US20110108792A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Single Crystal Phase Change Material
US20110124182A1 (en) * 2009-11-20 2011-05-26 Advanced Techology Materials, Inc. System for the delivery of germanium-based precursor
US8017432B2 (en) * 2010-01-08 2011-09-13 International Business Machines Corporation Deposition of amorphous phase change material
WO2011095849A1 (en) * 2010-02-03 2011-08-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
WO2011119175A1 (en) 2010-03-26 2011-09-29 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
WO2011123675A1 (en) 2010-04-01 2011-10-06 President And Fellows Of Harvard College Cyclic metal amides and vapor deposition using them
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US8148197B2 (en) * 2010-07-27 2012-04-03 Micron Technology, Inc. Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same
EP2444405A1 (en) 2010-10-07 2012-04-25 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal compounds for deposition of chalcogenide films at low temperature
EP2444406A1 (en) 2010-10-07 2012-04-25 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal compounds for deposition of chalcogenide films at low temperature
EP2444407A1 (en) 2010-10-07 2012-04-25 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal compounds for deposition of chalcogenide films at low temperature
EP2444404A1 (en) 2010-10-07 2012-04-25 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal compounds for deposition of chalcogenide films at low temperature
TWI450999B (zh) * 2011-08-19 2014-09-01 Tokyo Electron Ltd Ge-Sb-Te film forming method, Ge-Te film forming method, Sb-Te film forming method and memory medium
KR20140021979A (ko) * 2012-08-13 2014-02-21 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Ald/cvd 공정에서 gst 필름을 위한 전구체
CN103779496B (zh) * 2012-10-25 2017-07-28 中芯国际集成电路制造(上海)有限公司 相变存储单元的制作方法
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
US9214630B2 (en) 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
EP3014651B8 (en) * 2013-06-26 2018-12-26 Applied Materials, Inc. Methods of depositing a metal alloy film
KR20160036661A (ko) 2013-07-26 2016-04-04 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 환식 아민의 금속 아미드
CN104086589B (zh) * 2014-07-17 2017-02-01 江南大学 易制备的可用做微电子材料的吡唑基Ge(Ⅱ)化合物
WO2017030346A1 (ko) * 2015-08-17 2017-02-23 주식회사 유피케미칼 Ｇｅ(Ⅱ)-함유 전구체 조성물 및 상기 전구체 조성물을 이용하는 게르마늄-함유 막의 형성 방법
US10283704B2 (en) 2017-09-26 2019-05-07 International Business Machines Corporation Resistive memory device
US10808316B2 (en) 2018-05-10 2020-10-20 International Business Machines Corporation Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium
TWI871083B (zh) 2018-06-27 2025-01-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
TW202212605A (zh) * 2020-09-22 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積含鍺硫族化合物之層的系統、裝置和方法
WO2024076218A1 (ko) * 2022-10-07 2024-04-11 솔브레인 주식회사 칼코게나이드계 박막 개질제, 이를 사용하여 제조된 반도체 기판 및 반도체 소자
CN116043194B (zh) * 2023-01-13 2025-11-21 华中科技大学 一种原子层沉积硫系相变薄膜的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030076676A (ko) * 2001-02-12 2003-09-26 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
JP2004349684A (ja) * 2003-04-05 2004-12-09 Rohm & Haas Electronic Materials Llc ゲルマニウム化合物
KR20050069986A (ko) * 2002-08-18 2005-07-05 에비자 테크놀로지, 인크. 실리콘 산화물 및 산질화물의 저온 증착
KR20060023049A (ko) * 2004-09-08 2006-03-13 삼성전자주식회사 안티몬 프리커서 및 이를 이용한 상변화 메모리 소자

Family Cites Families (141)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU768457A1 (ru) 1976-01-04 1980-10-07 Всесоюзный научно-исследовательский и проектно-конструкторский институт добычи угля гидравлическим способом Катализатор дл очистки выхлопных газов от окислов азота
JPS5838296A (ja) 1981-08-31 1983-03-05 Ichiro Kijima 新規アンチモン化合物
US4948623A (en) * 1987-06-30 1990-08-14 International Business Machines Corporation Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex
US4962214A (en) * 1988-05-11 1990-10-09 Massachusettes Institute Of Technology Catalytic enantioselective addition of hydrocarbon equivalents to alpha, beta-unsaturated carbonyl compounds
US4927670A (en) * 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US4960916A (en) * 1989-09-29 1990-10-02 United States Of America As Represented By The Secretary Of The Navy Organometallic antimony compounds useful in chemical vapor deposition processes
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5296716A (en) 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5596522A (en) 1991-01-18 1997-01-21 Energy Conversion Devices, Inc. Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
US5312983A (en) 1991-02-15 1994-05-17 Advanced Technology Materials, Inc. Organometallic tellurium compounds useful in chemical vapor deposition processes
JP3336034B2 (ja) 1992-05-12 2002-10-21 同和鉱業株式会社 スパッタリング・ターゲットの製造方法
US5997642A (en) 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
US5972743A (en) 1996-12-03 1999-10-26 Advanced Technology Materials, Inc. Precursor compositions for ion implantation of antimony and ion implantation process utilizing same
US6146608A (en) 1997-11-24 2000-11-14 Advanced Technology Materials, Inc. Stable hydride source compositions for manufacture of semiconductor devices and structures
US6005127A (en) 1997-11-24 1999-12-21 Advanced Technology Materials, Inc. Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films
US6787186B1 (en) * 1997-12-18 2004-09-07 Advanced Technology Materials, Inc. Method of controlled chemical vapor deposition of a metal oxide ceramic layer
US7098163B2 (en) * 1998-08-27 2006-08-29 Cabot Corporation Method of producing membrane electrode assemblies for use in proton exchange membrane and direct methanol fuel cells
US6123993A (en) 1998-09-21 2000-09-26 Advanced Technology Materials, Inc. Method and apparatus for forming low dielectric constant polymeric films
US6086779A (en) 1999-03-01 2000-07-11 Mcgean-Rohco, Inc. Copper etching compositions and method for etching copper
US6750079B2 (en) * 1999-03-25 2004-06-15 Ovonyx, Inc. Method for making programmable resistance memory element
US6281022B1 (en) 1999-04-28 2001-08-28 Sharp Laboratories Of America, Inc. Multi-phase lead germanate film deposition method
JP2001067720A (ja) 1999-08-31 2001-03-16 Toray Ind Inc 光記録媒体
US6269979B1 (en) 1999-10-05 2001-08-07 Charles Dumont Multi-compartmented mixing dispenser
GB0004852D0 (en) * 2000-02-29 2000-04-19 Unilever Plc Ligand and complex for catalytically bleaching a substrate
US20020013487A1 (en) 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
JP4621333B2 (ja) * 2000-06-01 2011-01-26 ホーチキ株式会社 薄膜形成方法
US20020090815A1 (en) * 2000-10-31 2002-07-11 Atsushi Koike Method for forming a deposited film by plasma chemical vapor deposition
US7087482B2 (en) 2001-01-19 2006-08-08 Samsung Electronics Co., Ltd. Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
JP2002220658A (ja) 2001-01-26 2002-08-09 Ricoh Co Ltd 光ディスク用スパッタリングターゲットとその製造法
US7005392B2 (en) 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US8618595B2 (en) 2001-07-02 2013-12-31 Merck Patent Gmbh Applications of light-emitting nanoparticles
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
ATE340800T1 (de) 2001-10-26 2006-10-15 Epichem Ltd Vorlaeuferverbindungen für chemische dampfphasenabscheidung
US6972430B2 (en) 2002-02-20 2005-12-06 Stmicroelectronics S.R.L. Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
JP2005531373A (ja) * 2002-06-28 2005-10-20 ザ　リサーチ　ファウンデイション　オブ　ステイト　ユニバーシティー　オブ　ニューヨーク 治療薬送達装置及び方法
US6872963B2 (en) * 2002-08-08 2005-03-29 Ovonyx, Inc. Programmable resistance memory element with layered memory material
CN1726303B (zh) 2002-11-15 2011-08-24 哈佛学院院长等 使用脒基金属的原子层沉积
US6861559B2 (en) 2002-12-10 2005-03-01 Board Of Trustees Of Michigan State University Iminoamines and preparation thereof
US7425735B2 (en) * 2003-02-24 2008-09-16 Samsung Electronics Co., Ltd. Multi-layer phase-changeable memory devices
US7115927B2 (en) * 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7402851B2 (en) * 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US20040215030A1 (en) 2003-04-22 2004-10-28 Norman John Anthony Thomas Precursors for metal containing films
US7029978B2 (en) * 2003-08-04 2006-04-18 Intel Corporation Controlling the location of conduction breakdown in phase change memories
US7893419B2 (en) * 2003-08-04 2011-02-22 Intel Corporation Processing phase change material to improve programming speed
US20050082624A1 (en) * 2003-10-20 2005-04-21 Evgeni Gousev Germanate gate dielectrics for semiconductor devices
KR100577909B1 (ko) 2003-11-20 2006-05-10 주식회사 에버테크 유니버설 박막증착장치
EP1763893A2 (en) 2004-02-27 2007-03-21 ASM America, Inc. Germanium deposition
US7005665B2 (en) * 2004-03-18 2006-02-28 International Business Machines Corporation Phase change memory cell on silicon-on insulator substrate
US7312165B2 (en) * 2004-05-05 2007-12-25 Jursich Gregory M Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices
US7166732B2 (en) 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
WO2006012052A2 (en) 2004-06-25 2006-02-02 Arkema, Inc. Amidinate ligand containing chemical vapor deposition precursors
US20050287747A1 (en) * 2004-06-29 2005-12-29 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films
KR100639206B1 (ko) 2004-06-30 2006-10-30 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
KR100642635B1 (ko) * 2004-07-06 2006-11-10 삼성전자주식회사 하이브리드 유전체막을 갖는 반도체 집적회로 소자들 및그 제조방법들
KR100632948B1 (ko) * 2004-08-06 2006-10-11 삼성전자주식회사 칼코겐화합물 스퍼터링 형성 방법 및 이를 이용한 상변화 기억 소자 형성 방법
US7300873B2 (en) * 2004-08-13 2007-11-27 Micron Technology, Inc. Systems and methods for forming metal-containing layers using vapor deposition processes
US7250367B2 (en) 2004-09-01 2007-07-31 Micron Technology, Inc. Deposition methods using heteroleptic precursors
US7390360B2 (en) * 2004-10-05 2008-06-24 Rohm And Haas Electronic Materials Llc Organometallic compounds
JP2006124262A (ja) 2004-11-01 2006-05-18 Dainippon Printing Co Ltd ＩｎＳｂナノ粒子
JP2006156886A (ja) 2004-12-01 2006-06-15 Renesas Technology Corp 半導体集積回路装置およびその製造方法
KR100640620B1 (ko) 2004-12-27 2006-11-02 삼성전자주식회사 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법
KR100618879B1 (ko) 2004-12-27 2006-09-01 삼성전자주식회사 게르마늄 전구체, 이를 이용하여 형성된 ｇｓｔ 박막,상기 박막의 제조 방법 및 상변화 메모리 소자
US20080286446A1 (en) 2005-01-28 2008-11-20 Smuruthi Kamepalli Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change Materials
US20060172067A1 (en) 2005-01-28 2006-08-03 Energy Conversion Devices, Inc Chemical vapor deposition of chalcogenide materials
KR100585175B1 (ko) * 2005-01-31 2006-05-30 삼성전자주식회사 화학 기상 증착법에 의한 ＧｅＳｂＴｅ 박막의 제조방법
KR100688532B1 (ko) 2005-02-14 2007-03-02 삼성전자주식회사 텔루르 전구체, 이를 이용하여 제조된 Ｔｅ-함유 칼코게나이드(ｃｈａｌｃｏｇｅｎｉｄｅ) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자
US7399666B2 (en) 2005-02-15 2008-07-15 Micron Technology, Inc. Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
US7488967B2 (en) 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
EP1710324B1 (en) 2005-04-08 2008-12-03 STMicroelectronics S.r.l. PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device
JP2007019305A (ja) 2005-07-08 2007-01-25 Elpida Memory Inc 半導体記憶装置
KR100681266B1 (ko) 2005-07-25 2007-02-09 삼성전자주식회사 가변 저항 구조물의 제조 방법 및 이를 이용한 상변화메모리 장치의 제조 방법
US7525117B2 (en) 2005-08-09 2009-04-28 Ovonyx, Inc. Chalcogenide devices and materials having reduced germanium or telluruim content
KR100962623B1 (ko) * 2005-09-03 2010-06-11 삼성전자주식회사 상변화 물질층 형성 방법, 이를 이용한 상변화 메모리 유닛및 상변화 메모리 장치의 제조 방법
KR100675289B1 (ko) 2005-11-14 2007-01-29 삼성전자주식회사 상변화 기억 셀 어레이 영역 및 그 제조방법들
US7397060B2 (en) 2005-11-14 2008-07-08 Macronix International Co., Ltd. Pipe shaped phase change memory
US7459717B2 (en) 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
WO2007067604A2 (en) 2005-12-06 2007-06-14 Structured Materials Inc. Method of making undoped, alloyed and doped chalcogenide films by mocvd processes
US20070154637A1 (en) * 2005-12-19 2007-07-05 Rohm And Haas Electronic Materials Llc Organometallic composition
KR100695168B1 (ko) * 2006-01-10 2007-03-14 삼성전자주식회사 상변화 물질 박막의 형성방법, 이를 이용한 상변화 메모리소자의 제조방법
US7812334B2 (en) 2006-04-04 2010-10-12 Micron Technology, Inc. Phase change memory elements using self-aligned phase change material layers and methods of making and using same
US7514705B2 (en) 2006-04-25 2009-04-07 International Business Machines Corporation Phase change memory cell with limited switchable volume
EP2018642A4 (en) 2006-05-12 2009-05-27 Advanced Tech Materials LOW TEMPERATURE DEPOSITION OF STORAGE MATERIALS
EP2023393B1 (en) 2006-05-31 2014-07-16 Renesas Electronics Corporation Semiconductor device
CN101460657A (zh) 2006-06-02 2009-06-17 乔治洛德方法研究和开发液化空气有限公司 基于新型钛、锆和铪前体的高k介电膜的形成方法及其用于半导体制造的用途
EP2032529B1 (en) 2006-06-28 2012-10-17 President and Fellows of Harvard College Metal(iv) tetra-amidinate compounds and their use in vapor deposition
US7638645B2 (en) * 2006-06-28 2009-12-29 President And Fellows Of Harvard University Metal (IV) tetra-amidinate compounds and their use in vapor deposition
KR100757415B1 (ko) * 2006-07-13 2007-09-10 삼성전자주식회사 게르마늄 화합물 및 그 제조 방법, 상기 게르마늄 화합물을이용한 상변화 메모리 장치 및 그 형성 방법
KR100780865B1 (ko) 2006-07-19 2007-11-30 삼성전자주식회사 상변화막을 포함하는 반도체 소자의 형성 방법
KR100791477B1 (ko) 2006-08-08 2008-01-03 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
TWI305678B (en) * 2006-08-14 2009-01-21 Ind Tech Res Inst Phase-change memory and fabricating method thereof
KR100766504B1 (ko) * 2006-09-29 2007-10-15 삼성전자주식회사 반도체 소자 및 그 제조 방법
US20080090400A1 (en) 2006-10-17 2008-04-17 Cheek Roger W Self-aligned in-contact phase change memory device
KR101263822B1 (ko) 2006-10-20 2013-05-13 삼성전자주식회사 상변화 메모리 소자의 제조 방법 및 이에 적용된상변화층의 형성방법
US8106376B2 (en) 2006-10-24 2012-01-31 Macronix International Co., Ltd. Method for manufacturing a resistor random access memory with a self-aligned air gap insulator
CN102352488B (zh) 2006-11-02 2016-04-06 诚实公司 对于金属薄膜的cvd/ald有用的锑及锗复合物
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
KR101275799B1 (ko) 2006-11-21 2013-06-18 삼성전자주식회사 저온 증착이 가능한 게르마늄 전구체를 이용한 상변화층형성방법 및 이 방법을 이용한 상변화 메모리 소자의 제조방법
US20110060165A1 (en) 2006-12-05 2011-03-10 Advanced Technology Materials, Inc. Metal aminotroponiminates, bis-oxazolinates and guanidinates
KR100932904B1 (ko) 2006-12-05 2009-12-21 한국전자통신연구원 모뎀 성능 분석 장치 및 방법과, 모뎀 성능 분석장치의기능 검사방법
KR20080055508A (ko) 2006-12-15 2008-06-19 삼성전자주식회사 한 층에서 다른 결정 격자 구조를 갖는 상변화층 및 그형성 방법과 Ｔｉ 확산 방지 수단을 구비하는 상변화메모리 소자 및 그 제조 방법
US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
KR100896180B1 (ko) 2007-01-23 2009-05-12 삼성전자주식회사 선택적으로 성장된 상변화층을 구비하는 상변화 메모리소자 및 그 제조방법
FR2913523B1 (fr) 2007-03-09 2009-06-05 Commissariat Energie Atomique Disposistif de memorisation de donnees multi-niveaux a materiau a changement de phase
TWI480977B (zh) * 2007-04-09 2015-04-11 哈佛大學校長及評議會 銅內連線用的氮化鈷層及其製造方法
US20080254218A1 (en) 2007-04-16 2008-10-16 Air Products And Chemicals, Inc. Metal Precursor Solutions For Chemical Vapor Deposition
US8377341B2 (en) 2007-04-24 2013-02-19 Air Products And Chemicals, Inc. Tellurium (Te) precursors for making phase change memory materials
US20080272355A1 (en) 2007-05-04 2008-11-06 Samsung Electronics Co., Ltd. Phase change memory device and method for forming the same
TW200847399A (en) * 2007-05-21 2008-12-01 Ind Tech Res Inst Phase change memory device and method of fabricating the same
KR100888617B1 (ko) 2007-06-15 2009-03-17 삼성전자주식회사 상변화 메모리 장치 및 그 형성 방법
KR100905278B1 (ko) * 2007-07-19 2009-06-29 주식회사 아이피에스 박막증착장치, 박막증착방법 및 반도체 소자의 갭-필 방법
US7863593B2 (en) 2007-07-20 2011-01-04 Qimonda Ag Integrated circuit including force-filled resistivity changing material
KR20090013419A (ko) 2007-08-01 2009-02-05 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
KR101370275B1 (ko) 2007-08-21 2014-03-05 삼성전자주식회사 상변화 메모리 소자 및 그 제조 방법
KR101175091B1 (ko) 2007-09-13 2012-08-21 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 소결체의 제조 방법, 소결체, 당해 소결체로 이루어지는 스퍼터링 타겟 및 스퍼터링 타겟-백킹 플레이트 조립체
TWI471449B (zh) 2007-09-17 2015-02-01 Air Liquide 用於ｇｓｔ膜沈積之碲前驅物
KR20090029488A (ko) 2007-09-18 2009-03-23 삼성전자주식회사 Ｔｅ 함유 칼코게나이드막 형성 방법 및 상변화 메모리소자 제조 방법
US20090087561A1 (en) 2007-09-28 2009-04-02 Advanced Technology Materials, Inc. Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
KR101458953B1 (ko) 2007-10-11 2014-11-07 삼성전자주식회사 Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법
SG152203A1 (en) 2007-10-31 2009-05-29 Advanced Tech Materials Amorphous ge/te deposition process
US7960205B2 (en) 2007-11-27 2011-06-14 Air Products And Chemicals, Inc. Tellurium precursors for GST films in an ALD or CVD process
US20090162973A1 (en) 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
US8318252B2 (en) 2008-01-28 2012-11-27 Air Products And Chemicals, Inc. Antimony precursors for GST films in ALD/CVD processes
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US7935564B2 (en) 2008-02-25 2011-05-03 International Business Machines Corporation Self-converging bottom electrode ring
US7709325B2 (en) * 2008-03-06 2010-05-04 International Business Machines Corporation Method of forming ring electrode
US8674127B2 (en) 2008-05-02 2014-03-18 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
US20090275164A1 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US8765223B2 (en) 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
JP2011522120A (ja) 2008-05-29 2011-07-28 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 膜堆積用のテルル前駆体
US20110180905A1 (en) 2008-06-10 2011-07-28 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8168811B2 (en) 2008-07-22 2012-05-01 Advanced Technology Materials, Inc. Precursors for CVD/ALD of metal-containing films
US8124950B2 (en) 2008-08-26 2012-02-28 International Business Machines Corporation Concentric phase change memory element
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
JP2010258249A (ja) 2009-04-27 2010-11-11 Toshiba Corp 相変化メモリ装置
TW201106513A (en) 2009-05-22 2011-02-16 Advanced Tech Materials Low temperature GST process
KR101602007B1 (ko) 2009-07-02 2016-03-09 인티그리스, 인코포레이티드 유전체-충전된 중공 ｇｓｔ 구조
JP2011066135A (ja) 2009-09-16 2011-03-31 Elpida Memory Inc 相変化メモリ装置の製造方法
US20110124182A1 (en) 2009-11-20 2011-05-26 Advanced Techology Materials, Inc. System for the delivery of germanium-based precursor
US8017433B2 (en) 2010-02-09 2011-09-13 International Business Machines Corporation Post deposition method for regrowth of crystalline phase change material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030076676A (ko) * 2001-02-12 2003-09-26 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
KR20050069986A (ko) * 2002-08-18 2005-07-05 에비자 테크놀로지, 인크. 실리콘 산화물 및 산질화물의 저온 증착
JP2004349684A (ja) * 2003-04-05 2004-12-09 Rohm & Haas Electronic Materials Llc ゲルマニウム化合物
KR20060023049A (ko) * 2004-09-08 2006-03-13 삼성전자주식회사 안티몬 프리커서 및 이를 이용한 상변화 메모리 소자

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