JP2011066060A5 - - Google Patents
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- Publication number
- JP2011066060A5 JP2011066060A5 JP2009213290A JP2009213290A JP2011066060A5 JP 2011066060 A5 JP2011066060 A5 JP 2011066060A5 JP 2009213290 A JP2009213290 A JP 2009213290A JP 2009213290 A JP2009213290 A JP 2009213290A JP 2011066060 A5 JP2011066060 A5 JP 2011066060A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- metal
- substrate
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 150000002736 metal compounds Chemical class 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000003860 storage Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- -1 nitrogen-containing metal compound Chemical class 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009213290A JP2011066060A (ja) | 2009-09-15 | 2009-09-15 | 金属シリサイド膜の形成方法 |
| PCT/JP2010/064071 WO2011033903A1 (ja) | 2009-09-15 | 2010-08-20 | 金属シリサイド膜の形成方法 |
| KR1020127006625A KR101334946B1 (ko) | 2009-09-15 | 2010-08-20 | 금속 실리사이드막의 형성 방법 |
| CN2010800142854A CN102365715A (zh) | 2009-09-15 | 2010-08-20 | 金属硅化物膜的形成方法 |
| US13/415,935 US20120171863A1 (en) | 2009-09-15 | 2012-03-09 | Metal silicide film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009213290A JP2011066060A (ja) | 2009-09-15 | 2009-09-15 | 金属シリサイド膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011066060A JP2011066060A (ja) | 2011-03-31 |
| JP2011066060A5 true JP2011066060A5 (enExample) | 2012-08-30 |
Family
ID=43758516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009213290A Pending JP2011066060A (ja) | 2009-09-15 | 2009-09-15 | 金属シリサイド膜の形成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120171863A1 (enExample) |
| JP (1) | JP2011066060A (enExample) |
| KR (1) | KR101334946B1 (enExample) |
| CN (1) | CN102365715A (enExample) |
| WO (1) | WO2011033903A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5725454B2 (ja) * | 2011-03-25 | 2015-05-27 | 株式会社アルバック | ＮｉＳｉ膜の形成方法、シリサイド膜の形成方法、シリサイドアニール用金属膜の形成方法、真空処理装置、及び成膜装置 |
| JP5826698B2 (ja) | 2011-04-13 | 2015-12-02 | 株式会社アルバック | Ｎｉ膜の形成方法 |
| JP5934609B2 (ja) * | 2012-08-24 | 2016-06-15 | 株式会社アルバック | 金属膜の成膜方法 |
| JP5917351B2 (ja) * | 2012-09-20 | 2016-05-11 | 東京エレクトロン株式会社 | 金属膜の成膜方法 |
| CN105518830B (zh) | 2014-04-18 | 2018-01-26 | 富士电机株式会社 | 半导体装置的制造方法 |
| WO2015159436A1 (ja) | 2014-04-18 | 2015-10-22 | 富士電機株式会社 | 半導体装置の製造方法 |
| KR102150253B1 (ko) | 2014-06-24 | 2020-09-02 | 삼성전자주식회사 | 반도체 장치 |
| JP6387791B2 (ja) | 2014-10-29 | 2018-09-12 | 富士電機株式会社 | 半導体装置の製造方法 |
| US10388533B2 (en) * | 2017-06-16 | 2019-08-20 | Applied Materials, Inc. | Process integration method to tune resistivity of nickel silicide |
| JP7266105B2 (ja) * | 2019-02-08 | 2023-04-27 | アプライド マテリアルズ インコーポレイテッド | 半導体デバイス、半導体デバイスの製造方法、および処理システム |
| CN113394090B (zh) * | 2021-06-11 | 2023-01-31 | 西安微电子技术研究所 | 一种n型低电阻率的4H-SiC欧姆接触制造方法 |
| US20230115130A1 (en) * | 2021-10-13 | 2023-04-13 | Applied Materials, Inc. | Methods for preparing metal silicides |
| TW202429576A (zh) * | 2023-01-05 | 2024-07-16 | 美商應用材料股份有限公司 | 藉由鉬與鈦的整合之觸點電阻降低 |
| CN116497231B (zh) * | 2023-06-21 | 2024-01-05 | 核工业理化工程研究院 | 一种四（三氟膦）镍制备镍的方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590293A (ja) * | 1991-07-19 | 1993-04-09 | Toshiba Corp | 半導体装置およびその製造方法 |
| JPH11195619A (ja) * | 1998-01-06 | 1999-07-21 | Sony Corp | 半導体装置の製造方法 |
| KR101437250B1 (ko) * | 2002-11-15 | 2014-10-13 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 금속 아미디네이트를 이용한 원자층 증착법 |
| WO2006012052A2 (en) * | 2004-06-25 | 2006-02-02 | Arkema, Inc. | Amidinate ligand containing chemical vapor deposition precursors |
| KR100629266B1 (ko) * | 2004-08-09 | 2006-09-29 | 삼성전자주식회사 | 샐리사이드 공정 및 이를 사용한 반도체 소자의 제조방법 |
| KR20060016269A (ko) * | 2004-08-17 | 2006-02-22 | 삼성전자주식회사 | 금속 실리사이드막 형성 방법 및 이를 이용한 반도체소자의 금속배선 형성 방법 |
| US7064224B1 (en) * | 2005-02-04 | 2006-06-20 | Air Products And Chemicals, Inc. | Organometallic complexes and their use as precursors to deposit metal films |
| JP5046506B2 (ja) * | 2005-10-19 | 2012-10-10 | 東京エレクトロン株式会社 | 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 |
| KR100691099B1 (ko) * | 2005-12-29 | 2007-03-12 | 동부일렉트로닉스 주식회사 | 반도체 소자의 실리사이드막 형성 방법 |
-
2009
- 2009-09-15 JP JP2009213290A patent/JP2011066060A/ja active Pending
-
2010
- 2010-08-20 WO PCT/JP2010/064071 patent/WO2011033903A1/ja not_active Ceased
- 2010-08-20 CN CN2010800142854A patent/CN102365715A/zh active Pending
- 2010-08-20 KR KR1020127006625A patent/KR101334946B1/ko not_active Expired - Fee Related
-
2012
- 2012-03-09 US US13/415,935 patent/US20120171863A1/en not_active Abandoned
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