JP7266105B2 - 半導体デバイス、半導体デバイスの製造方法、および処理システム - Google Patents
半導体デバイス、半導体デバイスの製造方法、および処理システム Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 129
- 238000012545 processing Methods 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims description 89
- 229910021332 silicide Inorganic materials 0.000 claims description 59
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 28
- 239000003989 dielectric material Substances 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 22
- 238000012546 transfer Methods 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 102
- 239000000463 material Substances 0.000 description 12
- 238000005137 deposition process Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910005898 GeSn Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/41725—Source or drain electrodes for field effect devices
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Description
Claims (19)
- 半導体デバイスを形成するための方法であって、
ソース/ドレイン領域を基板上に形成することと、
ドープされた半導体層を前記ソース/ドレイン領域上に形成することと、
金属ケイ化物層を前記ドープされた半導体層上に形成することと、
誘電体材料を前記金属ケイ化物層の上方に形成することと、
前記金属ケイ化物層の一部を露出させるように、前記誘電体材料にトレンチを形成することと、
前記トレンチを導体で充填することと、
を含み、前記ソース/ドレイン領域、前記ドープされた半導体層、および前記金属ケイ化物層が、真空を破壊することなく形成される、方法。 - 前記方法が、単一の処理システム内で実行される、請求項1に記載の方法。
- 前記ドープされた半導体層が、前記ソース/ドレイン領域を包み込む、請求項1に記載の方法。
- 前記金属ケイ化物層が、前記ソース/ドレイン領域を包み込む、請求項1に記載の方法。
- 半導体構造から延びるソース/ドレイン領域、
前記ソース/ドレイン領域上に配置され、前記ソース/ドレイン領域を包み込むドープされた半導体層、
前記ドープされた半導体層上に配置され、前記ソース/ドレイン領域を包み込む金属ケイ化物層、および
前記金属ケイ化物層上に配置された導体、
を備える半導体デバイスであって、
前記ドープされた半導体層が、ホウ素およびガリウムでドープされたゲルマニウムスズ、ホウ素でドープされたシリコンゲルマニウム、ホウ素およびガリウムでドープされたゲルマニウム、またはリンおよびヒ素でドープされたシリコンを含む、半導体デバイス。 - 前記ソース/ドレイン領域が、シリコン、ゲルマニウム、シリコンゲルマニウム、またはIII/V族化合物半導体を含む、請求項5に記載の半導体デバイス。
- 前記ソース/ドレイン領域が、ドーパントでドープされている、請求項6に記載の半導体デバイス。
- 前記ドープされた半導体層が、前記ソース/ドレイン領域よりも高いドーパント濃度を有する、請求項7に記載の半導体デバイス。
- 前記ソース/ドレイン領域が、金属ケイ化物を含む、請求項5に記載の半導体デバイス。
- 前記金属ケイ化物層の一部上に配置されたコンタクトエッチング停止層を、さらに備える、請求項5に記載の半導体デバイス。
- 前記コンタクトエッチング停止層が、誘電体材料を含む、請求項10に記載の半導体デバイス。
- 移送チャンバ、
前記移送チャンバに連結された複数のプロセスチャンバ、および
コントローラ、
を備える処理システムであって、前記コントローラが、
ソース/ドレイン領域を形成することと、
ドープされた半導体層を前記ソース/ドレイン領域上に形成することと、
金属ケイ化物層を前記ドープされた半導体層上に形成することと、
を含むプロセスであって、前記ソース/ドレイン領域、前記ドープされた半導体層、および前記金属ケイ化物層が、真空を破壊することなく形成されるプロセスを、前記処理システム内で実行させるように構成されている、処理システム。 - 前記プロセスが、誘電体材料を前記金属ケイ化物層の上方に形成することと、前記金属ケイ化物層の一部を露出させるように、前記誘電体材料にトレンチを形成することと、前記トレンチを導体で充填することと、をさらに含む、請求項12に記載の処理システム。
- 前記プロセスが、前記金属ケイ化物層上にキャップ層を形成することをさらに含み、前記キャップ層が、誘電体材料を含む、請求項13に記載の処理システム。
- 前洗浄チャンバをさらに備える、請求項12に記載の処理システム。
- 前記ソース/ドレイン領域を形成する前に前洗浄プロセスを実行することを、さらに含む、請求項1に記載の方法。
- 前記金属ケイ化物層の上方にコンタクトエッチング停止層を形成することを、さらに含み、前記誘電体材料が、前記コンタクトエッチング停止層上に形成される、請求項1に記載の方法。
- 前記金属ケイ化物層が、ケイ化チタン、ケイ化コバルト、ケイ化ルテニウム、ケイ化タングステン、またはケイ化モリブデンを含む、請求項5に記載の半導体デバイス。
- 前記プロセスが、前記金属ケイ化物層の上方にコンタクトエッチング停止層を形成することを、さらに含み、前記誘電体材料が、前記コンタクトエッチング停止層上に形成される、請求項13に記載の処理システム。
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US201962803374P | 2019-02-08 | 2019-02-08 | |
US62/803,374 | 2019-02-08 | ||
PCT/US2020/015202 WO2020163104A1 (en) | 2019-02-08 | 2020-01-27 | Semiconductor device, method of making a semiconductor device, and processing system |
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US (1) | US11152479B2 (ja) |
JP (1) | JP7266105B2 (ja) |
KR (2) | KR20240063193A (ja) |
CN (1) | CN113678260A (ja) |
TW (1) | TWI828854B (ja) |
WO (1) | WO2020163104A1 (ja) |
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KR20240063193A (ko) | 2024-05-09 |
TW202046452A (zh) | 2020-12-16 |
CN113678260A (zh) | 2021-11-19 |
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