JP2015185825A5 - - Google Patents
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- Publication number
- JP2015185825A5 JP2015185825A5 JP2014064064A JP2014064064A JP2015185825A5 JP 2015185825 A5 JP2015185825 A5 JP 2015185825A5 JP 2014064064 A JP2014064064 A JP 2014064064A JP 2014064064 A JP2014064064 A JP 2014064064A JP 2015185825 A5 JP2015185825 A5 JP 2015185825A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal element
- substrate
- nitrogen
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 61
- 239000002184 metal Substances 0.000 claims 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 30
- 239000000758 substrate Substances 0.000 claims 22
- 229910052757 nitrogen Inorganic materials 0.000 claims 15
- 150000004767 nitrides Chemical class 0.000 claims 13
- 239000002131 composite material Substances 0.000 claims 10
- 238000010438 heat treatment Methods 0.000 claims 8
- 229910052736 halogen Inorganic materials 0.000 claims 6
- 150000002367 halogens Chemical class 0.000 claims 6
- 239000002994 raw material Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 239000003446 ligand Substances 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014064064A JP6202681B2 (ja) | 2014-03-26 | 2014-03-26 | 基板処理装置、半導体装置の製造方法およびプログラム |
| TW104106190A TWI612566B (zh) | 2014-03-26 | 2015-02-26 | 半導體裝置之製造方法及記憶媒體 |
| KR1020150033862A KR101652458B1 (ko) | 2014-03-26 | 2015-03-11 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
| US14/666,969 US9425039B2 (en) | 2014-03-26 | 2015-03-24 | Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014064064A JP6202681B2 (ja) | 2014-03-26 | 2014-03-26 | 基板処理装置、半導体装置の製造方法およびプログラム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015185825A JP2015185825A (ja) | 2015-10-22 |
| JP2015185825A5 true JP2015185825A5 (enExample) | 2016-11-10 |
| JP6202681B2 JP6202681B2 (ja) | 2017-09-27 |
Family
ID=54191390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014064064A Active JP6202681B2 (ja) | 2014-03-26 | 2014-03-26 | 基板処理装置、半導体装置の製造方法およびプログラム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9425039B2 (enExample) |
| JP (1) | JP6202681B2 (enExample) |
| KR (1) | KR101652458B1 (enExample) |
| TW (1) | TWI612566B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6623077B2 (ja) * | 2016-02-19 | 2019-12-18 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置及び基板処理方法 |
| JP2018095916A (ja) | 2016-12-13 | 2018-06-21 | 株式会社日立国際電気 | 基板処理装置、リソグラフィ用テンプレートの製造方法、プログラム |
| JP6586433B2 (ja) * | 2017-03-30 | 2019-10-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理方法、基板処理装置、プログラム |
| WO2019054989A1 (en) * | 2017-09-12 | 2019-03-21 | Intel Corporation | SEMICONDUCTOR DEVICES WITH METALLIC CONTACTS COMPRISING CRYSTALLINE ALLOYS |
| US20190220411A1 (en) * | 2018-01-17 | 2019-07-18 | Qualcomm Incorporated | Efficient partitioning for binning layouts |
| TWI809158B (zh) * | 2018-07-26 | 2023-07-21 | 日商東京威力科創股份有限公司 | 針對半導體元件形成晶體穩定的鐵電性鉿鋯基膜的方法 |
| CN112593208B (zh) * | 2020-11-25 | 2022-01-11 | 北京北方华创微电子装备有限公司 | 半导体工艺设备 |
| CN113140483A (zh) * | 2021-03-03 | 2021-07-20 | 上海璞芯科技有限公司 | 一种晶圆的传片方法和传片平台 |
| US11908893B2 (en) * | 2021-08-30 | 2024-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of forming the same |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273350A (ja) * | 2002-03-15 | 2003-09-26 | Nec Corp | 半導体装置及びその製造方法 |
| DE102004022602A1 (de) | 2004-05-07 | 2005-12-15 | Infineon Technologies Ag | Verfahren zur Herstellung eines Grabenkondensators, Verfahren zur Herstellung einer Speicherzelle, Grabenkondensator und Speicherzelle |
| US7598545B2 (en) * | 2005-04-21 | 2009-10-06 | International Business Machines Corporation | Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices |
| JP5384291B2 (ja) * | 2008-11-26 | 2014-01-08 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
| JP5774822B2 (ja) | 2009-05-25 | 2015-09-09 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
| JP5410174B2 (ja) * | 2009-07-01 | 2014-02-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理システム |
| JP5721952B2 (ja) | 2010-01-07 | 2015-05-20 | 株式会社日立国際電気 | 半導体装置、半導体装置の製造方法および基板処理装置 |
| US9472637B2 (en) * | 2010-01-07 | 2016-10-18 | Hitachi Kokusai Electric Inc. | Semiconductor device having electrode made of high work function material and method of manufacturing the same |
| JP5702584B2 (ja) * | 2010-11-30 | 2015-04-15 | 株式会社日立国際電気 | 半導体デバイスの製造方法および基板処理装置 |
| JP6022228B2 (ja) * | 2011-09-14 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US9082702B2 (en) * | 2012-02-27 | 2015-07-14 | Applied Materials, Inc. | Atomic layer deposition methods for metal gate electrodes |
| JP6147480B2 (ja) * | 2012-09-26 | 2017-06-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| US9059089B2 (en) * | 2013-02-28 | 2015-06-16 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
-
2014
- 2014-03-26 JP JP2014064064A patent/JP6202681B2/ja active Active
-
2015
- 2015-02-26 TW TW104106190A patent/TWI612566B/zh active
- 2015-03-11 KR KR1020150033862A patent/KR101652458B1/ko active Active
- 2015-03-24 US US14/666,969 patent/US9425039B2/en active Active
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