JP2011006782A5 - - Google Patents

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Publication number
JP2011006782A5
JP2011006782A5 JP2010115334A JP2010115334A JP2011006782A5 JP 2011006782 A5 JP2011006782 A5 JP 2011006782A5 JP 2010115334 A JP2010115334 A JP 2010115334A JP 2010115334 A JP2010115334 A JP 2010115334A JP 2011006782 A5 JP2011006782 A5 JP 2011006782A5
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JP
Japan
Prior art keywords
substrate
semiconductor device
manufacturing
metal compound
reactive gas
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Application number
JP2010115334A
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English (en)
Japanese (ja)
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JP2011006782A (ja
JP5787488B2 (ja
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Priority to JP2010115334A priority Critical patent/JP5787488B2/ja
Priority claimed from JP2010115334A external-priority patent/JP5787488B2/ja
Priority to US12/801,127 priority patent/US8614147B2/en
Priority to TW099116792A priority patent/TWI425572B/zh
Priority to KR1020100050619A priority patent/KR20100129236A/ko
Publication of JP2011006782A publication Critical patent/JP2011006782A/ja
Publication of JP2011006782A5 publication Critical patent/JP2011006782A5/ja
Application granted granted Critical
Publication of JP5787488B2 publication Critical patent/JP5787488B2/ja
Active legal-status Critical Current
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JP2010115334A 2009-05-28 2010-05-19 半導体装置の製造方法及び基板処理装置 Active JP5787488B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010115334A JP5787488B2 (ja) 2009-05-28 2010-05-19 半導体装置の製造方法及び基板処理装置
US12/801,127 US8614147B2 (en) 2009-05-28 2010-05-24 Method of manufacturing a semiconductor device
TW099116792A TWI425572B (zh) 2009-05-28 2010-05-26 半導體裝置之製造方法及基板處理裝置
KR1020100050619A KR20100129236A (ko) 2009-05-28 2010-05-28 반도체 장치의 제조 방법 및 기판 처리 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009128944 2009-05-28
JP2009128944 2009-05-28
JP2010115334A JP5787488B2 (ja) 2009-05-28 2010-05-19 半導体装置の製造方法及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2011006782A JP2011006782A (ja) 2011-01-13
JP2011006782A5 true JP2011006782A5 (enExample) 2013-07-04
JP5787488B2 JP5787488B2 (ja) 2015-09-30

Family

ID=43220715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010115334A Active JP5787488B2 (ja) 2009-05-28 2010-05-19 半導体装置の製造方法及び基板処理装置

Country Status (4)

Country Link
US (1) US8614147B2 (enExample)
JP (1) JP5787488B2 (enExample)
KR (1) KR20100129236A (enExample)
TW (1) TWI425572B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100829327B1 (ko) * 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
KR20130055694A (ko) 2010-11-29 2013-05-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
KR101550255B1 (ko) 2011-05-10 2015-09-04 가부시키가이샤 후지킨 유량 모니터 부착 압력식 유량 제어 장치와, 이것을 사용한 유체 공급계의 이상 검출 방법 및 모니터 유량 이상 시의 처치 방법
JP5755958B2 (ja) * 2011-07-08 2015-07-29 株式会社フジキン 半導体製造装置の原料ガス供給装置
JP5647083B2 (ja) 2011-09-06 2014-12-24 株式会社フジキン 原料濃度検出機構を備えた原料気化供給装置
JP2013133521A (ja) * 2011-12-27 2013-07-08 Tokyo Electron Ltd 成膜方法
US20140363903A1 (en) * 2013-06-10 2014-12-11 Tokyo Ohta Kogyo Co., Ltd. Substrate treating apparatus and method of treating substrate
JP2015190035A (ja) * 2014-03-28 2015-11-02 東京エレクトロン株式会社 ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法
US9768171B2 (en) 2015-12-16 2017-09-19 International Business Machines Corporation Method to form dual tin layers as pFET work metal stack
JP7033882B2 (ja) * 2017-05-01 2022-03-11 東京エレクトロン株式会社 成膜方法および成膜装置
KR102065243B1 (ko) 2017-05-01 2020-01-10 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
JP7356237B2 (ja) * 2019-03-12 2023-10-04 株式会社堀場エステック 濃度制御装置、原料消費量推定方法、及び、濃度制御装置用プログラム
JP2022173989A (ja) * 2021-05-10 2022-11-22 東京エレクトロン株式会社 窒化チタン膜の成膜方法、及び窒化チタン膜を成膜する装置
CN114059040A (zh) * 2021-11-24 2022-02-18 四川大学 一种在管网内表面上TiN涂层的沉积方法及装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3569023B2 (ja) * 1995-04-06 2004-09-22 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP3469420B2 (ja) * 1996-12-20 2003-11-25 東京エレクトロン株式会社 Ｃｖｄ成膜方法
US5989652A (en) * 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
CN100366792C (zh) 2000-12-12 2008-02-06 东京毅力科创株式会社 薄膜形成方法及薄膜形成装置
JP2003213418A (ja) 2002-01-18 2003-07-30 Tokyo Electron Ltd 成膜方法
KR100622609B1 (ko) * 2005-02-16 2006-09-19 주식회사 하이닉스반도체 박막 형성 방법
US20060234502A1 (en) * 2005-04-13 2006-10-19 Vishwanath Bhat Method of forming titanium nitride layers
KR20060118679A (ko) 2005-05-17 2006-11-24 삼성전자주식회사 챔버 표면 처리 방법
JP4727667B2 (ja) * 2005-08-16 2011-07-20 株式会社日立国際電気 薄膜形成方法および半導体デバイスの製造方法
US7674352B2 (en) * 2006-11-28 2010-03-09 Applied Materials, Inc. System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus
US8389390B2 (en) * 2007-04-10 2013-03-05 Tzu-Yin Chiu Method of impurity introduction and controlled surface removal
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
JP5285519B2 (ja) * 2009-07-01 2013-09-11 パナソニック株式会社 半導体装置及びその製造方法
KR101211043B1 (ko) * 2010-04-05 2012-12-12 에스케이하이닉스 주식회사 매립게이트를 구비한 반도체 장치 제조방법

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