JP2009144242A5 - タングステン膜の製造方法および装置 - Google Patents
タングステン膜の製造方法および装置 Download PDFInfo
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- JP2009144242A5 JP2009144242A5 JP2008310322A JP2008310322A JP2009144242A5 JP 2009144242 A5 JP2009144242 A5 JP 2009144242A5 JP 2008310322 A JP2008310322 A JP 2008310322A JP 2008310322 A JP2008310322 A JP 2008310322A JP 2009144242 A5 JP2009144242 A5 JP 2009144242A5
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Claims (14)
- タングステン膜を製造する方法であって、
基板上にタングステン核生成層を堆積する工程と、
前記タングステン核生成層の堆積が完了した後であって、かつ、前記タングステン核生成層上にバルク層を形成する前に、前記タングステン核生成層の表面を複数の還元剤パルスに曝すことにより、堆積した前記タングステン核生成層の表面に処理操作をする工程と、
を備え、
前記処理操作の間における前記基板の温度は、前記タングステン核生成層を堆積する間における前記基板の温度よりも高いことを特徴とする、
タングステン膜を製造する方法。 - 前記還元剤は、ボロン含有還元剤であることを特徴とする請求項1に記載の製造方法。
- 前記還元剤パルスの数は、2から8であることを特徴とする請求項1に記載の製造方法。
- 前記タングステン核生成層の堆積が完了した後に、前記基板を約375℃から415℃に加熱する工程を備え、前記基板の温度は前基板の表面を前記複数の還元剤パルスに曝す間において、約375℃から415℃に維持されることを特徴とする請求項1に記載の製造方法。
- 前記複数の還元剤パルスにおける各パルスは、パルス時間を有し、前記パルス時間は、約0.5から5秒であることを特徴とする請求項1に記載の製造方法。
- 前記複数の還元剤パルスにおける各パルスは、パルス時間を有し、少なくとも2つの還元剤パルスの前記パルス時間は異なることを特徴とする請求項1に記載の製造方法。
- 前記還元剤パルス間のインターバル時間は、約2から5秒であることを特徴とする請求項1に記載の製造方法。
- 前記還元剤パルス間のインターバル時間は、少なくとも2つのインターバル時間で異なることを特徴とする請求項1に記載の製造方法。
- 前記処理操作の間の前記基板の温度は、前記タングステン核生成層を堆積する間の前記基板の温度よりも少なくとも約25℃高いことを特徴とする請求項1に記載の製造方法。
- 前記タングステン核生成層の上にバルクタングステン層を堆積させる工程を備え、
前記タングステン核生成層の堆積とバルクタングステン層の堆積の間においては、前記基板上に実質的にタングステンは堆積されないことを特徴とする請求項1に記載の製造方法。 - 前記基板上に形成された前記タングステン膜は、シート抵抗の不均一性が5%未満であることを特徴とする請求項1に記載の製造方法。
- 前記基板上に形成された前記タングステン膜の抵抗率は、500オングストロームの厚さのタングステン膜では、約15マイクロオームセンチメートル未満であることを特徴とする請求項1に記載の製造方法。
- 反応チャンバ内で基板上にタングステン膜を製造する方法であって、
(a)前記基板を反応チャンバ内に配置する工程と、
(b)パルス核生成層プロセスによって、前記基板上にタングステン核生成層を堆積させる工程と、
(c)前記基板を約395℃に加熱し、温度を安定させる工程と、
(d)前記基板の温度を約395℃に維持しつつ、前記核生成層を2から8パルスのジボランにさらす工程であって、前記ジボランは約100から500sccmの流量であり、約0.5から5秒のパルス時間、およびパルス間においてはパルス動作なしに約2から5秒のインターバル時間を有する工程と、
(e)前記基板の温度を約395℃に維持する工程と、
(f)前記核生成層をタングステン含有前駆物質にさらす工程と、
(g)前記タングステン核生成層上にタングステンバルク層を堆積させて前記タングステン膜を形成する工程と、
を備えるタングステン膜を製造する方法。 - 基板上にタングステン膜を堆積させる装置であって、
a)マルチステーション基板堆積チャンバを備え、
前記マルチステーション基板堆積チャンバは、
i)基板サポート、および、前記基板をガスのパルスにさらすための1つ以上のガス入口、を有するタングステン核生成層堆積ステーションと、
ii)基板サポート、および、前記基板をガスのパルスにさらすための1つ以上のガス入口、を有する還元剤暴露ステーションと、
iii)基板サポート、および、前記基板をガスにさらすための1つ以上のガス入口、を有するタングステンバルク層堆積ステーションと、
を備え、
b)前記マルチステーション基板堆積チャンバにおける動作を制御するコントローラと、
を備え、
前記コントローラが制御する前記動作は、
i)前記タングステン核生成層堆積ステーション内で、還元剤パルス、パージガスパルス、およびタングステン含有前駆物質パルスのサイクルを複数発生させることにより、前記基板の表面にタングステン核生成層を形成することと、
ii)前記還元剤暴露ステーションにおいて、複数の還元剤パルスを発生させ、前記複数の還元剤パルス間においてはパルス動作をさせないことと、
iii)前記タングステンバルク層堆積ステーションにタングステン含有前駆物質、および還元剤を放つことと、
を含む、装置。
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US11/951,236 US7772114B2 (en) | 2007-12-05 | 2007-12-05 | Method for improving uniformity and adhesion of low resistivity tungsten film |
US11/951,236 | 2007-12-05 |
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JP2009144242A JP2009144242A (ja) | 2009-07-02 |
JP2009144242A5 true JP2009144242A5 (ja) | 2012-01-26 |
JP5376361B2 JP5376361B2 (ja) | 2013-12-25 |
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