JP2015159282A5 - 半導体基板を処理する方法 - Google Patents
半導体基板を処理する方法 Download PDFInfo
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- JP2015159282A5 JP2015159282A5 JP2015021804A JP2015021804A JP2015159282A5 JP 2015159282 A5 JP2015159282 A5 JP 2015159282A5 JP 2015021804 A JP2015021804 A JP 2015021804A JP 2015021804 A JP2015021804 A JP 2015021804A JP 2015159282 A5 JP2015159282 A5 JP 2015159282A5
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- 239000000758 substrate Substances 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000010926 purge Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 9
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N Trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- 230000001404 mediated Effects 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001808 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Description
本発明は、以下の適用例としても実現可能である。
［適用例１６］
基板表面上に被膜を堆積するための装置であって、
前記基板を保持するためのペデスタルを備える反応チャンバと、
真空に結合するための少なくとも１つの出口と、
２つ以上の前駆体源に結合された１つまたは複数のプロセスガス入口と、
装置内での操作を制御するための制御装置であって、
（ａ）前記基板の前記表面に第１の前駆体を実質的に吸着するのに十分な期間にわたって第１の前駆体を前記反応チャンバ内に導入するステップ、
（ｂ）気相から前記第１の前駆体を実質的に全て除去するには不十分な期間にわたって前記チャンバをパージするステップ、
（ｃ）前記基板に実質的にコンフォーマルであり、約１．５Å以上の厚さを有する層を前記基板表面上に形成するのに十分な期間にわたって第２の前駆体を前記反応チャンバに導入するステップ、
（ｄ）気相から前記第２の前駆体を除去するのに十分な期間にわたって前記チャンバをパージするステップ、および
（ｅ）ステップ（ａ）〜（ｄ）を繰り返すステップ
のための機械可読命令を備える制御装置と
を備える装置。
［適用例１７］
適用例１６に記載の装置であって、
前記制御装置が、さらに、ステップ（ｂ）を行うための時間の約３．７５〜約１５倍の時間にわたってステップ（ａ）を行うための命令を含む装置。
［適用例１８］
適用例１６または１７に記載の装置であって、
前記第１の前駆体を導入するステップが、前記第１の前駆体のリザーバの前記ヘッドスペースから前記チャンバに前記第１の前駆体を引き込むステップを含む装置。
［適用例１９］
適用例１８に記載の装置であって、
前記第１の前駆体を導入するステップが、前記ヘッドスペースからの前記第１の前駆体の引込みよりも下流で、かつ前記反応チャンバよりも上流で、前記第１の前駆体を含むキャリアガスを流すステップをさらに含む装置。
これらおよび他の態様を、図面を参照して以下にさらに述べる。
［適用例１６］
基板表面上に被膜を堆積するための装置であって、
前記基板を保持するためのペデスタルを備える反応チャンバと、
真空に結合するための少なくとも１つの出口と、
２つ以上の前駆体源に結合された１つまたは複数のプロセスガス入口と、
装置内での操作を制御するための制御装置であって、
（ａ）前記基板の前記表面に第１の前駆体を実質的に吸着するのに十分な期間にわたって第１の前駆体を前記反応チャンバ内に導入するステップ、
（ｂ）気相から前記第１の前駆体を実質的に全て除去するには不十分な期間にわたって前記チャンバをパージするステップ、
（ｃ）前記基板に実質的にコンフォーマルであり、約１．５Å以上の厚さを有する層を前記基板表面上に形成するのに十分な期間にわたって第２の前駆体を前記反応チャンバに導入するステップ、
（ｄ）気相から前記第２の前駆体を除去するのに十分な期間にわたって前記チャンバをパージするステップ、および
（ｅ）ステップ（ａ）〜（ｄ）を繰り返すステップ
のための機械可読命令を備える制御装置と
を備える装置。
［適用例１７］
適用例１６に記載の装置であって、
前記制御装置が、さらに、ステップ（ｂ）を行うための時間の約３．７５〜約１５倍の時間にわたってステップ（ａ）を行うための命令を含む装置。
［適用例１８］
適用例１６または１７に記載の装置であって、
前記第１の前駆体を導入するステップが、前記第１の前駆体のリザーバの前記ヘッドスペースから前記チャンバに前記第１の前駆体を引き込むステップを含む装置。
［適用例１９］
適用例１８に記載の装置であって、
前記第１の前駆体を導入するステップが、前記ヘッドスペースからの前記第１の前駆体の引込みよりも下流で、かつ前記反応チャンバよりも上流で、前記第１の前駆体を含むキャリアガスを流すステップをさらに含む装置。
これらおよび他の態様を、図面を参照して以下にさらに述べる。
Claims (15)
- フィーチャを有する半導体基板を反応チャンバ内で処理する方法であって、
（ａ）前記基板の表面に実質的に吸着するのに十分な期間にわたってアルミニウム含有前駆体に前記基板を露出させるステップと、
（ｂ）気相から前記アルミニウム含有前駆体を実質的に全て除去するには不十分な期間にわたって、前記アルミニウム含有前駆体を前記反応チャンバからパージするステップと、
（ｃ）前記基板に実質的にコンフォーマルであり、約１．５Å以上の厚さを有する窒化アルミニウム層を前記基板の前記表面上に形成するために、熱媒介反応を誘発するのに十分な期間にわたって窒素含有前駆体に前記基板を露出させるステップと、
（ｄ）気相の前記窒素含有前駆体を前記反応チャンバからパージするステップと、
（ｅ）ステップ（ａ）〜（ｄ）を繰り返すステップと
を含む方法。 - 請求項１に記載の方法であって、
前記窒化アルミニウム層が、少なくとも約８０％のステップカバレッジを有する方法。 - 請求項１に記載の方法であって、
前記基板が、約２５０℃〜約４５０℃の間のプロセス温度で処理される方法。 - 請求項１に記載の方法であって、
前記基板が、約０．０１Ｔｏｒｒ〜約１０Ｔｏｒｒの間の圧力で処理される方法。 - 請求項１に記載の方法であって、
前記アルミニウム含有前駆体がトリメチルアルミニウム（ＴＭＡ）である方法。 - 請求項１に記載の方法であって、
前記窒素含有前駆体がアンモニア（ＮＨ3）である方法。 - 請求項１に記載の方法であって、
前記アルミニウム含有前駆体をパージするステップが、窒素（Ｎ2）を流すステップをさらに含み、前記窒素含有前駆体をパージするステップが、窒素（Ｎ2）を流すステップをさらに含む方法。 - 請求項１に記載の方法であって、
前記アルミニウム含有前駆体が、約２秒にわたってパージされる方法。 - 請求項１に記載の方法であって、
前記基板が、約７．５秒〜約３０秒にわたって前記アルミニウム含有前駆体に露出される方法。 - 請求項１に記載の方法であって、
前記基板が前記アルミニウム含有前駆体に露出される時間と、前記アルミニウム含有前駆体がパージされる時間との比が、約３．７５：１〜約１５：１の間である方法。 - 請求項１に記載の方法であって、
処理が、実質的にパターンローディングを示さない方法。 - 請求項１に記載の方法であって、
ステップ（ａ）〜（ｄ）のサイクル中に堆積された窒化アルミニウムの量が、少なくとも約２Åである方法。 - 請求項１に記載の方法であって、
ステップ（ａ）〜（ｄ）のサイクル中に堆積された窒化アルミニウムの量が、少なくとも約５Åである方法。 - 請求項１に記載の方法であって、
前記基板の前記フィーチャが、少なくとも約２：１のアスペクト比を有する方法。 - 請求項１に記載の方法であって、
前記基板の前記フィーチャが、約１００ｎｍ未満の開口を有する方法。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/183,287 US9214334B2 (en) | 2014-02-18 | 2014-02-18 | High growth rate process for conformal aluminum nitride |
| US14/183,287 | 2014-02-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015159282A JP2015159282A (ja) | 2015-09-03 |
| JP2015159282A5 true JP2015159282A5 (ja) | 2016-02-25 |
| JP6038975B2 JP6038975B2 (ja) | 2016-12-07 |
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| JP2015021804A Active JP6038975B2 (ja) | 2014-02-18 | 2015-02-06 | 半導体基板を処理する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9214334B2 (ja) |
| JP (1) | JP6038975B2 (ja) |
| KR (1) | KR101701024B1 (ja) |
| CN (1) | CN104851796B (ja) |
| SG (2) | SG10201606551TA (ja) |
| TW (1) | TWI646212B (ja) |
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-
2014
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2015
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- 2015-02-11 TW TW104104471A patent/TWI646212B/zh active
- 2015-02-13 SG SG10201606551TA patent/SG10201606551TA/en unknown
- 2015-02-13 KR KR1020150022610A patent/KR101701024B1/ko active IP Right Grant
- 2015-02-13 SG SG10201501134UA patent/SG10201501134UA/en unknown
- 2015-02-17 CN CN201510086588.1A patent/CN104851796B/zh active Active
- 2015-11-04 US US14/932,869 patent/US20160064211A1/en not_active Abandoned
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