JP2017118035A - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
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- 238000000151 deposition Methods 0.000 title claims abstract description 9
- 230000008021 deposition Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 44
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 22
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 6
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 340
- 238000012545 processing Methods 0.000 claims description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 229910052799 carbon Inorganic materials 0.000 claims description 22
- 239000002994 raw material Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000002210 silicon-based material Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 74
- 238000012360 testing method Methods 0.000 description 43
- 238000011156 evaluation Methods 0.000 description 32
- 230000008569 process Effects 0.000 description 31
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 26
- 238000010926 purge Methods 0.000 description 18
- 238000001179 sorption measurement Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
前記基板にシリコン原料のガスを供給して吸着させる第1の工程と、
次いで、アンモニアガスをプラズマ化されない状態で前記基板に供給して物理吸着させる第2の工程と、
然る後、プラズマを形成するためのプラズマ形成用ガスをプラズマ化して得られた活性種を前記基板に供給し、前記基板に物理吸着されたアンモニアと前記シリコン原料とを反応させて反応生成物の層を形成する第3の工程と、
前記第1の工程と、前記第2の工程と、前記第3の工程とからなるサイクルを複数回繰り返し、前記反応生成物の層を堆積させて前記シリコン窒化膜を成膜する工程と、
を備えることを特徴とする。
真空容器内に設けられ、基板を公転させるための回転テーブルと、
前記回転テーブル上の基板の通過領域にシリコン原料のガスを供給するための第1の処理部と、
前記第1の処理部に対して前記回転テーブルの回転方向下流側に位置すると共に前記第1の処理部とは、ガスの混合を抑えるために分離され、前記基板の通過領域にアンモニアガスをプラズマ化されない状態で供給して当該基板に物理吸着させるための第2の処理部と、
前記第2の処理部に対して前記回転テーブルの回転方向下流側に位置すると共に前記第1の処理部とは、ガスの混合を抑えるために分離され、前記基板の通過領域にプラズマを形成するためのプラズマ形成用ガスをプラズマ化して得られる活性種を供給するための第3の処理部と、を備えたことを特徴とする。
評価試験1として、上記の成膜装置1を用いて上記の実施形態で説明したようにウエハWに成膜処理を行った。この成膜処理時の処理条件を以下に記載すると、ウエハWの温度は435℃、回転テーブル12の回転数は30rpm、真空容器11内の圧力は267Pa(2Torr)、マイクロ波発生器37への供給電力は2500Wである。また、ガス給排気ユニット2のガス流路25A、25B、25Cへ供給するDCSガスの流量は、夫々55sccm、510sccm、145sccmとした。また、発明の実施の形態では説明を省略したが、ガス給排気ユニット2のガス流路25Aについては供給されるDCSガスの流量が比較的小さい場合においても、安定して原料ガス吐出口21からガスを吐出させることができるように、Arガス供給源に接続されている。この評価試験では、当該Arガスを90sccmでガス流路25Aに供給し、ArガスとDCSガスとの混合ガスを、ガス流路25Aに接続される原料ガス吐出口21から吐出した。
評価試験2−1として試験用の真空容器内にウエハWを収納し、ウエハWの温度を485℃とし、真空容器内の圧力が267Pa(2Torr)になるように排気を行った。そして、真空容器内のウエハWに対してALDによるSiN膜の成膜を行った。具体的には、DCSガスの供給、パージガスの供給、NH3ガスの供給、パージガスの供給、プラズマ化したArガスの供給をこの順番で実施するサイクルを200回繰り返して成膜を行った。1サイクルにおいて、NH3ガスの供給とプラズマ化したArガスの供給との間におけるパージガスの供給は12秒間行い、他の各ガス供給については6秒間行った。成膜後にウエハWの膜厚を測定した。
評価試験3として発明の実施の形態で説明した成膜装置1を用いてウエハWにSiNの成膜処理を複数回行った。各成膜処理において、ウエハWの温度は450℃、真空容器11内の圧力は267Pa(2Torr)、マイクロ波発生器37の出力は2500Wに設定した。そして、各成膜処理ではプラズマ形成領域R2にプラズマ形成用ガスとして、NH3ガスと他のガスとの混合ガスを供給しており、他のガスについては成膜処理毎に変更した。具体的には他のガスとしてArガスまたはHeガスを用いた。NH3ガスの流量は750sccm、他のガスの流量は4000sccmとした。
R1 原料ガス吸着領域
R2 プラズマ形成領域
1 成膜装置
11 真空容器
12 回転テーブル
2 給排気ユニット
3 プラズマ形成ユニット
4A、4B ガス供給ユニット
66 活性種
Claims (7)
- 真空容器内において基板にシリコン窒化膜を成膜する成膜方法について、
前記基板にシリコン原料のガスを供給して吸着させる第1の工程と、
次いで、アンモニアガスをプラズマ化されない状態で前記基板に供給して物理吸着させる第2の工程と、
然る後、プラズマを形成するためのプラズマ形成用ガスをプラズマ化して得られた活性種を前記基板に供給し、前記基板に物理吸着されたアンモニアと前記シリコン原料とを反応させて反応生成物の層を形成する第3の工程と、
前記第1の工程と、前記第2の工程と、前記第3の工程とからなるサイクルを複数回繰り返し、前記反応生成物の層を堆積させて前記シリコン窒化膜を成膜する工程と、
を備えることを特徴とする成膜方法。 - 前記活性種は、窒素ガス、アンモニアガス及びヘリウムガスのうちの少なくともいずれかの活性種を含むことを特徴とする請求項1記載の成膜方法。
- 前記活性種を基板に供給する工程は、前記窒素ガス及びアンモニアガスの少なくとも一方とアルゴンガスとをプラズマ化する工程を含むことを特徴とする請求項2記載の成膜方法。
- 前記シリコン窒化膜は、前記基板の表面に炭素膜のパターンが露出した基板に、当該炭素膜を被覆するように形成されることを特徴とする請求項1ないし3のいずれか1つに記載の成膜方法。
- 前記第2の工程は、前記アンモニアガスを物理吸着させるために前記基板を150℃〜650℃に加熱する工程を含むことを特徴とする請求項1ないし4のいずれか1つに記載の成膜方法。
- 前記真空容器内に設けられる回転テーブルに前記基板を載置して当該基板を公転させる工程を含み、
前記第1の工程は、前記回転テーブル上の前記基板の通過領域における第1の処理部に前記シリコン原料のガスを供給する工程を含み、
前記第2の工程は、前記基板の通過領域において前記第1の処理部に対して前記回転テーブルの回転方向下流側に位置する第2の処理部に前記アンモニアガスをプラズマ化されない状態で供給する工程を含み、
前記第3の工程は、前記基板の通過領域において前記第2の処理部に対して前記回転テーブルの回転方向下流側に位置する第3の処理部に前記活性種を供給する工程を含み、
前記第1の処理部に対して前記第2の処理部及び前記第3の処理部を、ガスの混合を抑えるために分離する工程を備えることを特徴とする請求項1ないし5のいずれか1つに記載の成膜方法。 - 基板にシリコン窒化膜を成膜する装置において、
真空容器内に設けられ、基板を公転させるための回転テーブルと、
前記回転テーブル上の基板の通過領域にシリコン原料のガスを供給するための第1の処理部と、
前記第1の処理部に対して前記回転テーブルの回転方向下流側に位置すると共に前記第1の処理部とは、ガスの混合を抑えるために分離され、前記基板の通過領域にアンモニアガスをプラズマ化されない状態で供給して当該基板に物理吸着させるための第2の処理部と、
前記第2の処理部に対して前記回転テーブルの回転方向下流側に位置すると共に前記第1の処理部とは、ガスの混合を抑えるために分離され、前記基板の通過領域にプラズマを形成するためのプラズマ形成用ガスをプラズマ化して得られる活性種を供給するための第3の処理部と、を備えたことを特徴とする成膜装置。
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