TWI425572B - 半導體裝置之製造方法及基板處理裝置 - Google Patents

半導體裝置之製造方法及基板處理裝置 Download PDF

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Publication number
TWI425572B
TWI425572B TW099116792A TW99116792A TWI425572B TW I425572 B TWI425572 B TW I425572B TW 099116792 A TW099116792 A TW 099116792A TW 99116792 A TW99116792 A TW 99116792A TW I425572 B TWI425572 B TW I425572B
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TW
Taiwan
Prior art keywords
film
substrate
gas supply
wafer
gas
Prior art date
Application number
TW099116792A
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English (en)
Chinese (zh)
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TW201101393A (en
Inventor
境正憲
齋藤達之
Original Assignee
日立國際電氣股份有限公司
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Publication of TW201101393A publication Critical patent/TW201101393A/zh
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Publication of TWI425572B publication Critical patent/TWI425572B/zh

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Classifications

    • H10P14/43—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H10P14/24—
    • H10P14/432—
    • H10W20/0523—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
TW099116792A 2009-05-28 2010-05-26 半導體裝置之製造方法及基板處理裝置 TWI425572B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009128944 2009-05-28
JP2010115334A JP5787488B2 (ja) 2009-05-28 2010-05-19 半導体装置の製造方法及び基板処理装置

Publications (2)

Publication Number Publication Date
TW201101393A TW201101393A (en) 2011-01-01
TWI425572B true TWI425572B (zh) 2014-02-01

Family

ID=43220715

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099116792A TWI425572B (zh) 2009-05-28 2010-05-26 半導體裝置之製造方法及基板處理裝置

Country Status (4)

Country Link
US (1) US8614147B2 (enExample)
JP (1) JP5787488B2 (enExample)
KR (1) KR20100129236A (enExample)
TW (1) TWI425572B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100829327B1 (ko) * 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
WO2012073938A1 (ja) 2010-11-29 2012-06-07 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
JP5727596B2 (ja) 2011-05-10 2015-06-03 株式会社フジキン 流量モニタ付圧力式流量制御装置の実ガスモニタ流量初期値のメモリ方法及び実ガスモニタ流量の出力確認方法
JP5755958B2 (ja) * 2011-07-08 2015-07-29 株式会社フジキン 半導体製造装置の原料ガス供給装置
JP5647083B2 (ja) 2011-09-06 2014-12-24 株式会社フジキン 原料濃度検出機構を備えた原料気化供給装置
JP2013133521A (ja) * 2011-12-27 2013-07-08 Tokyo Electron Ltd 成膜方法
US20140363903A1 (en) * 2013-06-10 2014-12-11 Tokyo Ohta Kogyo Co., Ltd. Substrate treating apparatus and method of treating substrate
JP2015190035A (ja) * 2014-03-28 2015-11-02 東京エレクトロン株式会社 ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法
US9768171B2 (en) 2015-12-16 2017-09-19 International Business Machines Corporation Method to form dual tin layers as pFET work metal stack
JP7033882B2 (ja) * 2017-05-01 2022-03-11 東京エレクトロン株式会社 成膜方法および成膜装置
KR102065243B1 (ko) 2017-05-01 2020-01-10 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
JP7356237B2 (ja) * 2019-03-12 2023-10-04 株式会社堀場エステック 濃度制御装置、原料消費量推定方法、及び、濃度制御装置用プログラム
JP2022173989A (ja) * 2021-05-10 2022-11-22 東京エレクトロン株式会社 窒化チタン膜の成膜方法、及び窒化チタン膜を成膜する装置
CN114059040A (zh) * 2021-11-24 2022-02-18 四川大学 一种在管网内表面上TiN涂层的沉积方法及装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6080444A (en) * 1996-12-20 2000-06-27 Tokyo Electron Limited CVD film forming method including annealing and film forming performed at substantially the same pressure
US20060183301A1 (en) * 2005-02-16 2006-08-17 Seung-Jin Yeom Method for forming thin film
US20060234502A1 (en) * 2005-04-13 2006-10-19 Vishwanath Bhat Method of forming titanium nitride layers
US20080124463A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus
US20080254602A1 (en) * 2007-04-10 2008-10-16 Tzu-Yin Chiu Method of impurity introduction and

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* Cited by examiner, † Cited by third party
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JP3569023B2 (ja) * 1995-04-06 2004-09-22 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
US5989652A (en) 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
CN100366792C (zh) 2000-12-12 2008-02-06 东京毅力科创株式会社 薄膜形成方法及薄膜形成装置
JP2003213418A (ja) 2002-01-18 2003-07-30 Tokyo Electron Ltd 成膜方法
KR20060118679A (ko) 2005-05-17 2006-11-24 삼성전자주식회사 챔버 표면 처리 방법
JP4727667B2 (ja) 2005-08-16 2011-07-20 株式会社日立国際電気 薄膜形成方法および半導体デバイスの製造方法
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
JP5285519B2 (ja) * 2009-07-01 2013-09-11 パナソニック株式会社 半導体装置及びその製造方法
KR101211043B1 (ko) * 2010-04-05 2012-12-12 에스케이하이닉스 주식회사 매립게이트를 구비한 반도체 장치 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6080444A (en) * 1996-12-20 2000-06-27 Tokyo Electron Limited CVD film forming method including annealing and film forming performed at substantially the same pressure
US20060183301A1 (en) * 2005-02-16 2006-08-17 Seung-Jin Yeom Method for forming thin film
US20060234502A1 (en) * 2005-04-13 2006-10-19 Vishwanath Bhat Method of forming titanium nitride layers
US20080124463A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus
US20080254602A1 (en) * 2007-04-10 2008-10-16 Tzu-Yin Chiu Method of impurity introduction and

Also Published As

Publication number Publication date
TW201101393A (en) 2011-01-01
US20100304567A1 (en) 2010-12-02
JP5787488B2 (ja) 2015-09-30
US8614147B2 (en) 2013-12-24
JP2011006782A (ja) 2011-01-13
KR20100129236A (ko) 2010-12-08

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