JP5787488B2 - 半導体装置の製造方法及び基板処理装置 - Google Patents

半導体装置の製造方法及び基板処理装置 Download PDF

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Publication number
JP5787488B2
JP5787488B2 JP2010115334A JP2010115334A JP5787488B2 JP 5787488 B2 JP5787488 B2 JP 5787488B2 JP 2010115334 A JP2010115334 A JP 2010115334A JP 2010115334 A JP2010115334 A JP 2010115334A JP 5787488 B2 JP5787488 B2 JP 5787488B2
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Japan
Prior art keywords
substrate
film
gas supply
metal compound
processing chamber
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JP2010115334A
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English (en)
Japanese (ja)
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JP2011006782A5 (enExample
JP2011006782A (ja
Inventor
境　正憲
正憲 境
齋藤　達之
達之 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Publication date
Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2010115334A priority Critical patent/JP5787488B2/ja
Priority to US12/801,127 priority patent/US8614147B2/en
Priority to TW099116792A priority patent/TWI425572B/zh
Priority to KR1020100050619A priority patent/KR20100129236A/ko
Publication of JP2011006782A publication Critical patent/JP2011006782A/ja
Publication of JP2011006782A5 publication Critical patent/JP2011006782A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2010115334A 2009-05-28 2010-05-19 半導体装置の製造方法及び基板処理装置 Active JP5787488B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010115334A JP5787488B2 (ja) 2009-05-28 2010-05-19 半導体装置の製造方法及び基板処理装置
US12/801,127 US8614147B2 (en) 2009-05-28 2010-05-24 Method of manufacturing a semiconductor device
TW099116792A TWI425572B (zh) 2009-05-28 2010-05-26 半導體裝置之製造方法及基板處理裝置
KR1020100050619A KR20100129236A (ko) 2009-05-28 2010-05-28 반도체 장치의 제조 방법 및 기판 처리 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009128944 2009-05-28
JP2009128944 2009-05-28
JP2010115334A JP5787488B2 (ja) 2009-05-28 2010-05-19 半導体装置の製造方法及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2011006782A JP2011006782A (ja) 2011-01-13
JP2011006782A5 JP2011006782A5 (enExample) 2013-07-04
JP5787488B2 true JP5787488B2 (ja) 2015-09-30

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JP2010115334A Active JP5787488B2 (ja) 2009-05-28 2010-05-19 半導体装置の製造方法及び基板処理装置

Country Status (4)

Country Link
US (1) US8614147B2 (enExample)
JP (1) JP5787488B2 (enExample)
KR (1) KR20100129236A (enExample)
TW (1) TWI425572B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100829327B1 (ko) * 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
JPWO2012073938A1 (ja) 2010-11-29 2014-05-19 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
KR101550255B1 (ko) 2011-05-10 2015-09-04 가부시키가이샤 후지킨 유량 모니터 부착 압력식 유량 제어 장치와, 이것을 사용한 유체 공급계의 이상 검출 방법 및 모니터 유량 이상 시의 처치 방법
JP5755958B2 (ja) * 2011-07-08 2015-07-29 株式会社フジキン 半導体製造装置の原料ガス供給装置
JP5647083B2 (ja) 2011-09-06 2014-12-24 株式会社フジキン 原料濃度検出機構を備えた原料気化供給装置
JP2013133521A (ja) * 2011-12-27 2013-07-08 Tokyo Electron Ltd 成膜方法
US20140363903A1 (en) * 2013-06-10 2014-12-11 Tokyo Ohta Kogyo Co., Ltd. Substrate treating apparatus and method of treating substrate
JP2015190035A (ja) * 2014-03-28 2015-11-02 東京エレクトロン株式会社 ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法
US9768171B2 (en) 2015-12-16 2017-09-19 International Business Machines Corporation Method to form dual tin layers as pFET work metal stack
JP7033882B2 (ja) * 2017-05-01 2022-03-11 東京エレクトロン株式会社 成膜方法および成膜装置
KR102065243B1 (ko) 2017-05-01 2020-01-10 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
JP7356237B2 (ja) * 2019-03-12 2023-10-04 株式会社堀場エステック 濃度制御装置、原料消費量推定方法、及び、濃度制御装置用プログラム
JP2022173989A (ja) * 2021-05-10 2022-11-22 東京エレクトロン株式会社 窒化チタン膜の成膜方法、及び窒化チタン膜を成膜する装置
CN114059040A (zh) * 2021-11-24 2022-02-18 四川大学 一种在管网内表面上TiN涂层的沉积方法及装置

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JP3569023B2 (ja) * 1995-04-06 2004-09-22 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP3469420B2 (ja) 1996-12-20 2003-11-25 東京エレクトロン株式会社 Ｃｖｄ成膜方法
US5989652A (en) 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
WO2002048427A1 (en) 2000-12-12 2002-06-20 Tokyo Electron Limited Thin film forming method and thin film forming device
JP2003213418A (ja) 2002-01-18 2003-07-30 Tokyo Electron Ltd 成膜方法
KR100622609B1 (ko) * 2005-02-16 2006-09-19 주식회사 하이닉스반도체 박막 형성 방법
US20060234502A1 (en) * 2005-04-13 2006-10-19 Vishwanath Bhat Method of forming titanium nitride layers
KR20060118679A (ko) 2005-05-17 2006-11-24 삼성전자주식회사 챔버 표면 처리 방법
JP4727667B2 (ja) 2005-08-16 2011-07-20 株式会社日立国際電気 薄膜形成方法および半導体デバイスの製造方法
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KR101211043B1 (ko) * 2010-04-05 2012-12-12 에스케이하이닉스 주식회사 매립게이트를 구비한 반도체 장치 제조방법

Also Published As

Publication number Publication date
TW201101393A (en) 2011-01-01
US8614147B2 (en) 2013-12-24
US20100304567A1 (en) 2010-12-02
TWI425572B (zh) 2014-02-01
KR20100129236A (ko) 2010-12-08
JP2011006782A (ja) 2011-01-13

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