JP2011146711A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011146711A5 JP2011146711A5 JP2011004797A JP2011004797A JP2011146711A5 JP 2011146711 A5 JP2011146711 A5 JP 2011146711A5 JP 2011004797 A JP2011004797 A JP 2011004797A JP 2011004797 A JP2011004797 A JP 2011004797A JP 2011146711 A5 JP2011146711 A5 JP 2011146711A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- copper
- dielectric
- layer
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 24
- 239000000758 substrate Substances 0.000 claims 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 10
- 229910052802 copper Inorganic materials 0.000 claims 10
- 239000010949 copper Substances 0.000 claims 10
- 229910052782 aluminium Inorganic materials 0.000 claims 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims 8
- 150000001875 compounds Chemical class 0.000 claims 6
- 238000002161 passivation Methods 0.000 claims 6
- 238000009832 plasma treatment Methods 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000000376 reactant Substances 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910018509 Al—N Inorganic materials 0.000 claims 1
- 229910018516 Al—O Inorganic materials 0.000 claims 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 1
- 239000005751 Copper oxide Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/688,154 | 2010-01-15 | ||
| US12/688,154 US8268722B2 (en) | 2009-06-03 | 2010-01-15 | Interfacial capping layers for interconnects |
| US12/689,803 | 2010-01-19 | ||
| US12/689,803 US7858510B1 (en) | 2008-02-28 | 2010-01-19 | Interfacial layers for electromigration resistance improvement in damascene interconnects |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011146711A JP2011146711A (ja) | 2011-07-28 |
| JP2011146711A5 true JP2011146711A5 (enExample) | 2014-02-27 |
| JP5773306B2 JP5773306B2 (ja) | 2015-09-02 |
Family
ID=44268066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011004797A Active JP5773306B2 (ja) | 2010-01-15 | 2011-01-13 | 半導体素子構造を形成する方法および装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5773306B2 (enExample) |
| KR (1) | KR101742825B1 (enExample) |
| CN (1) | CN102130046B (enExample) |
| TW (2) | TWI612618B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7727881B1 (en) | 2004-11-03 | 2010-06-01 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
| US7727880B1 (en) | 2004-11-03 | 2010-06-01 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
| KR20190077619A (ko) | 2011-06-03 | 2019-07-03 | 노벨러스 시스템즈, 인코포레이티드 | 상호접속을 위한 캡핑층들을 함유하는 금속 및 실리콘 |
| CN104008995B (zh) * | 2013-02-22 | 2017-09-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
| EP2965347A4 (en) * | 2013-03-05 | 2017-02-15 | Entegris, Inc. | Ion implantation compositions, systems, and methods |
| KR20160034378A (ko) * | 2013-07-24 | 2016-03-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 코발트 기판 프로세싱 시스템들, 장치들, 및 방법들 |
| CN104576514B (zh) * | 2013-10-29 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制备方法 |
| CN104637864B (zh) * | 2013-11-14 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | 提高数据保持能力的方法 |
| US9368448B2 (en) * | 2013-12-20 | 2016-06-14 | Applied Materials, Inc. | Metal-containing films as dielectric capping barrier for advanced interconnects |
| US9465071B2 (en) * | 2014-03-04 | 2016-10-11 | Mediatek Inc. | Method and apparatus for generating featured scan pattern |
| US10319908B2 (en) * | 2014-05-01 | 2019-06-11 | Crossbar, Inc. | Integrative resistive memory in backend metal layers |
| US9633896B1 (en) * | 2015-10-09 | 2017-04-25 | Lam Research Corporation | Methods for formation of low-k aluminum-containing etch stop films |
| JP6998945B2 (ja) * | 2016-10-02 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | ルテニウムライナーと共に銅のエレクトロマイグレーションを改善するドープされた選択的な金属キャップ |
| US9859153B1 (en) * | 2016-11-14 | 2018-01-02 | Lam Research Corporation | Deposition of aluminum oxide etch stop layers |
| CN107256845A (zh) * | 2017-05-25 | 2017-10-17 | 上海集成电路研发中心有限公司 | 一种铜互连结构及其制造方法 |
| US20190127212A1 (en) * | 2017-10-31 | 2019-05-02 | Texas Instruments Incorporated | Forming a passivation coating for mems devices |
| US10741440B2 (en) * | 2018-06-05 | 2020-08-11 | Lam Research Corporation | Metal liner passivation and adhesion enhancement by zinc doping |
| US10707119B1 (en) * | 2019-01-14 | 2020-07-07 | Globalfoundries Inc. | Interconnect structures with airgaps and dielectric-capped interconnects |
| CN111769074B (zh) * | 2019-04-02 | 2024-09-27 | 长鑫存储技术有限公司 | 半导体互连结构及其制作方法 |
| IL296563A (en) | 2020-04-21 | 2022-11-01 | Praxair Technology Inc | Novel methods for gas phase selective etching of silicon-germanium layers |
| CN114429990A (zh) * | 2020-10-29 | 2022-05-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US11581258B2 (en) * | 2021-01-13 | 2023-02-14 | Nanya Technology Corporation | Semiconductor device structure with manganese-containing interconnect structure and method for forming the same |
| US11961735B2 (en) * | 2021-06-04 | 2024-04-16 | Tokyo Electron Limited | Cyclic plasma processing |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0765179B2 (ja) * | 1987-05-15 | 1995-07-12 | 日本電信電話株式会社 | 化学的気相成長方法 |
| US6605531B1 (en) * | 1997-11-26 | 2003-08-12 | Applied Materials, Inc. | Hole-filling technique using CVD aluminum and PVD aluminum integration |
| US20020048926A1 (en) * | 2000-09-14 | 2002-04-25 | Konecni Anthony J. | Method for forming a self-aligned copper capping diffusion barrier |
| US6664182B2 (en) * | 2001-04-25 | 2003-12-16 | Macronix International Co. Ltd. | Method of improving the interlayer adhesion property of low-k layers in a dual damascene process |
| US6518167B1 (en) * | 2002-04-16 | 2003-02-11 | Advanced Micro Devices, Inc. | Method of forming a metal or metal nitride interface layer between silicon nitride and copper |
| JP2006505127A (ja) * | 2002-10-29 | 2006-02-09 | エーエスエム インターナショナル エヌ．ヴェー． | 酸素架橋構造及び方法 |
| KR100564801B1 (ko) * | 2003-12-30 | 2006-03-28 | 동부아남반도체 주식회사 | 반도체 제조 방법 |
| US7102232B2 (en) * | 2004-04-19 | 2006-09-05 | International Business Machines Corporation | Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer |
| US7704873B1 (en) * | 2004-11-03 | 2010-04-27 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
| TW200802703A (en) * | 2005-11-28 | 2008-01-01 | Nxp Bv | Method of forming a self aligned copper capping layer |
| JP2007180408A (ja) * | 2005-12-28 | 2007-07-12 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| DE102007004867B4 (de) * | 2007-01-31 | 2009-07-30 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid |
| US7754588B2 (en) * | 2007-09-28 | 2010-07-13 | Tel Epion Inc. | Method to improve a copper/dielectric interface in semiconductor devices |
-
2011
- 2011-01-13 JP JP2011004797A patent/JP5773306B2/ja active Active
- 2011-01-14 TW TW100101507A patent/TWI612618B/zh active
- 2011-01-14 TW TW105123303A patent/TW201709418A/zh unknown
- 2011-01-14 CN CN201110021170.4A patent/CN102130046B/zh active Active
- 2011-01-17 KR KR1020110004334A patent/KR101742825B1/ko active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011146711A5 (enExample) | ||
| US10793946B1 (en) | Reaction chamber passivation and selective deposition of metallic films | |
| US11056385B2 (en) | Selective formation of metallic films on metallic surfaces | |
| US10014212B2 (en) | Selective deposition of metallic films | |
| US10049924B2 (en) | Selective formation of metallic films on metallic surfaces | |
| JP6538300B2 (ja) | 感受性基材上にフィルムを蒸着するための方法 | |
| TWI709655B (zh) | 金屬膜的選擇性沈積 | |
| CN105390378B (zh) | 半导体器件的制造方法及衬底处理装置 | |
| US10790141B2 (en) | Surface-selective atomic layer deposition using hydrosilylation passivation | |
| TWI394858B (zh) | 用於沉積具有降低電阻率及改良表面形態之鎢膜的方法 | |
| US9875888B2 (en) | High temperature silicon oxide atomic layer deposition technology | |
| KR102415780B1 (ko) | Ｐｅ-ａｌｄ에 의한 유기 공동-반응물과 함께 규소 전구체를 사용한 규소-기반 필름에의 탄소 및/또는 질소 합체 | |
| KR20170017779A (ko) | 알루미늄 및 질소 함유 물질의 선택적 퇴적 | |
| TWI729285B (zh) | 金屬薄膜的選擇性沈積 | |
| TWI727389B (zh) | 使用自組裝單層的選擇性沉積的方法 | |
| KR20150060583A (ko) | 저온 ald 막들을 위한 챔버 언더코팅 준비 방법 | |
| KR20160118968A (ko) | Ald 및 ale에 의해 컨포멀한 막들의 증착 | |
| TW201441408A (zh) | 包含氮化矽之膜的電漿輔助原子層沉積 | |
| JP3527231B2 (ja) | 基板処理装置のクリーニング方法 | |
| TW201443274A (zh) | 使用二矽氧烷先質之膜的沉積 | |
| US20230187204A1 (en) | Tungsten Fluoride Soak And Treatment For Tungsten Oxide Removal | |
| JP2004186210A (ja) | 窒素含有ケイ素化合物膜の形成方法 | |
| JPH11219952A (ja) | 半導体装置の製造方法 |