KR101742825B1 - 다마신 인터커넥트에서 전자이동 저항성 개선을 위한 계면층 - Google Patents

다마신 인터커넥트에서 전자이동 저항성 개선을 위한 계면층 Download PDF

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KR101742825B1
KR101742825B1 KR1020110004334A KR20110004334A KR101742825B1 KR 101742825 B1 KR101742825 B1 KR 101742825B1 KR 1020110004334 A KR1020110004334 A KR 1020110004334A KR 20110004334 A KR20110004334 A KR 20110004334A KR 101742825 B1 KR101742825 B1 KR 101742825B1
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layer
copper
substrate
insulating film
aluminum
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KR20110084130A (ko
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아난다 바너지
조니 앤드류 안토넬리
제니퍼 오'러플린
만디얌 스리람
바트 반 슈라벤디즈크
세샤사이 바라다라잔
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노벨러스 시스템즈, 인코포레이티드
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Priority claimed from US12/689,803 external-priority patent/US7858510B1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01354—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020110004334A 2010-01-15 2011-01-17 다마신 인터커넥트에서 전자이동 저항성 개선을 위한 계면층 Active KR101742825B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/688,154 2010-01-15
US12/688,154 US8268722B2 (en) 2009-06-03 2010-01-15 Interfacial capping layers for interconnects
US12/689,803 2010-01-19
US12/689,803 US7858510B1 (en) 2008-02-28 2010-01-19 Interfacial layers for electromigration resistance improvement in damascene interconnects

Publications (2)

Publication Number Publication Date
KR20110084130A KR20110084130A (ko) 2011-07-21
KR101742825B1 true KR101742825B1 (ko) 2017-06-01

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Country Status (4)

Country Link
JP (1) JP5773306B2 (enExample)
KR (1) KR101742825B1 (enExample)
CN (1) CN102130046B (enExample)
TW (2) TW201709418A (enExample)

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US7727880B1 (en) 2004-11-03 2010-06-01 Novellus Systems, Inc. Protective self-aligned buffer layers for damascene interconnects
US7727881B1 (en) 2004-11-03 2010-06-01 Novellus Systems, Inc. Protective self-aligned buffer layers for damascene interconnects
TWI541938B (zh) 2011-06-03 2016-07-11 諾菲勒斯系統公司 用於互連的含金屬及矽覆蓋層
CN104008995B (zh) * 2013-02-22 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法
US9831063B2 (en) * 2013-03-05 2017-11-28 Entegris, Inc. Ion implantation compositions, systems, and methods
US20150030771A1 (en) * 2013-07-24 2015-01-29 Applied Materials, Inc. Cobalt substrate processing systems, apparatus, and methods
CN104576514B (zh) * 2013-10-29 2017-11-24 中芯国际集成电路制造(上海)有限公司 半导体器件的制备方法
CN104637864B (zh) * 2013-11-14 2017-11-24 中芯国际集成电路制造(上海)有限公司 提高数据保持能力的方法
US9368448B2 (en) * 2013-12-20 2016-06-14 Applied Materials, Inc. Metal-containing films as dielectric capping barrier for advanced interconnects
US9465071B2 (en) * 2014-03-04 2016-10-11 Mediatek Inc. Method and apparatus for generating featured scan pattern
US10319908B2 (en) * 2014-05-01 2019-06-11 Crossbar, Inc. Integrative resistive memory in backend metal layers
US9633896B1 (en) * 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films
KR102772148B1 (ko) 2016-10-02 2025-02-27 어플라이드 머티어리얼스, 인코포레이티드 루테늄 라이너로 구리 전자 이동을 개선하기 위한 도핑된 선택적 금속 캡
US9859153B1 (en) * 2016-11-14 2018-01-02 Lam Research Corporation Deposition of aluminum oxide etch stop layers
CN107256845A (zh) * 2017-05-25 2017-10-17 上海集成电路研发中心有限公司 一种铜互连结构及其制造方法
US20190127212A1 (en) * 2017-10-31 2019-05-02 Texas Instruments Incorporated Forming a passivation coating for mems devices
US10741440B2 (en) * 2018-06-05 2020-08-11 Lam Research Corporation Metal liner passivation and adhesion enhancement by zinc doping
US10707119B1 (en) * 2019-01-14 2020-07-07 Globalfoundries Inc. Interconnect structures with airgaps and dielectric-capped interconnects
CN111769074B (zh) * 2019-04-02 2024-09-27 长鑫存储技术有限公司 半导体互连结构及其制作方法
EP4139952A1 (en) * 2020-04-21 2023-03-01 Praxair Technology, Inc. Novel methods for gas phase selective etching of silicon-germanium layers
CN114429990B (zh) * 2020-10-29 2026-01-23 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11581258B2 (en) * 2021-01-13 2023-02-14 Nanya Technology Corporation Semiconductor device structure with manganese-containing interconnect structure and method for forming the same
US11961735B2 (en) * 2021-06-04 2024-04-16 Tokyo Electron Limited Cyclic plasma processing

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JP2002164351A (ja) 2000-09-14 2002-06-07 Texas Instruments Inc 自己整合型銅キャップ拡散障壁形成方法
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US20070145600A1 (en) 2005-12-28 2007-06-28 Hisashi Yano Semiconductor device and manufacturing method thereof

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Publication number Publication date
JP2011146711A (ja) 2011-07-28
TW201709418A (zh) 2017-03-01
KR20110084130A (ko) 2011-07-21
CN102130046A (zh) 2011-07-20
TW201138024A (en) 2011-11-01
JP5773306B2 (ja) 2015-09-02
CN102130046B (zh) 2015-01-14
TWI612618B (zh) 2018-01-21

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