JP2011146711A - ダマシンインターコネクトのエレクトロマイグレーション抵抗を向上させる界面層 - Google Patents
ダマシンインターコネクトのエレクトロマイグレーション抵抗を向上させる界面層 Download PDFInfo
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- JP2011146711A JP2011146711A JP2011004797A JP2011004797A JP2011146711A JP 2011146711 A JP2011146711 A JP 2011146711A JP 2011004797 A JP2011004797 A JP 2011004797A JP 2011004797 A JP2011004797 A JP 2011004797A JP 2011146711 A JP2011146711 A JP 2011146711A
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- dielectric
- copper
- substrate
- metal
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- 230000006872 improvement Effects 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 229
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- 239000010949 copper Substances 0.000 claims abstract description 125
- 229910052802 copper Inorganic materials 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 238000000151 deposition Methods 0.000 claims abstract description 71
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 56
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 48
- 150000001875 compounds Chemical class 0.000 claims abstract description 25
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 23
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 33
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
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- 239000000126 substance Substances 0.000 claims description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
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- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 7
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
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- 238000000354 decomposition reaction Methods 0.000 description 4
- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
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- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- QTRQHYHCQPFURH-UHFFFAOYSA-N aluminum;diethylazanide Chemical compound [Al+3].CC[N-]CC.CC[N-]CC.CC[N-]CC QTRQHYHCQPFURH-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
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- 125000000962 organic group Chemical group 0.000 description 3
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- 150000003346 selenoethers Chemical class 0.000 description 3
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- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 3
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- OXJUCLBTTSNHOF-UHFFFAOYSA-N 5-ethylcyclopenta-1,3-diene;ruthenium(2+) Chemical compound [Ru+2].CC[C-]1C=CC=C1.CC[C-]1C=CC=C1 OXJUCLBTTSNHOF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
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- FCEOGYWNOSBEPV-FDGPNNRMSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FCEOGYWNOSBEPV-FDGPNNRMSA-N 0.000 description 2
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- 230000005012 migration Effects 0.000 description 2
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- ZUSRFDBQZSPBDV-UHFFFAOYSA-N n-[bis(dimethylamino)stibanyl]-n-methylmethanamine Chemical compound CN(C)[Sb](N(C)C)N(C)C ZUSRFDBQZSPBDV-UHFFFAOYSA-N 0.000 description 2
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
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- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- DXKNERXVNFFIOM-UHFFFAOYSA-N diethylazanide;di(propan-2-yl)azanide;titanium(4+) Chemical compound CCN(CC)[Ti](N(CC)CC)(N(C(C)C)C(C)C)N(C(C)C)C(C)C DXKNERXVNFFIOM-UHFFFAOYSA-N 0.000 description 1
- VBCSQFQVDXIOJL-UHFFFAOYSA-N diethylazanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VBCSQFQVDXIOJL-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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Abstract
【解決手段】a)酸化物を含まない銅または銅合金107の露呈領域と誘電体の露呈領域とを含む基板100を、アルミニウムを含む化合物に、少なくとも約摂氏350度の基板温度で曝して、前記誘電体および前記銅または銅合金の層の両方の上にアルミニウムを含む第1の層を形成する工程と、(b)前記第1の層の少なくとも一部を化学的に修正して、アルミニウムを含むパッシベーション層109を形成する工程と、(c)前記パッシベーション層の上に誘電体層111.を堆積させる工程とを備える方法。
【選択図】図1B
Description
素子の寸法が縮小を続け、インターコネクトが受ける電流密度が高くなるなか、エレクトロマイグレーションは、IC製造における信頼性を脅かす顕著な課題となっている。エレクトロマイグレーションは、電流を帯びた金属原子をマイグレートさせ、インターコネクト内に空隙を形成する。空隙の形成は素子の故障につながる。金属原子のマイグレーションは、金属/拡散バリアの界面および粒界において顕著に生じる。現在の90nmおよび45nmの技術ノードの水準においては、エレクトロマイグレーション性能を向上させる方法が必要である。エレクトロマイグレーション性能は、ドーパント元素をインターコネクトに導入することにより向上させることができるが、これらドーパントは通常インターコネクト金属(例えばCu)よりも高抵抗であるものが殆どであり、インターコネクト抵抗を大幅に上げる。従って、インターコネクトを無制御にドーピングすると、インターコネクトが許容できないほどの高抵抗になることがある。
図2Aは、部分的なIC構造の横断面図の一例を示す。本素子では、層間誘電体201に形成されるビアおよびトレンチは、拡散バリア材料203と位置合わせされており、銅または銅合金205を充填されている。銅線205の上部には、銅線205とパッシベーション層209との間の界面に設けられた薄い保護キャップ207が含まれている。パッシベーション層209は、ILD層201の上および保護キャップ207の上の両方に設けられて、これら両方の層と接している。誘電体拡散バリアまたはエッチングストップ層211は、パッシベーション層211の上に設けられている。明瞭性を優先して図面には示さないが、誘電体拡散バリアまたはエッチングストップ層211の上にはさらなる別のILD層も設けられている。パッシベーション層209および拡散バリア(またはエッチングストップ)層211は協働して、金属/ILD境界に位置する界面膜を構成する(図1Bを参照して説明した層109同様に)。
保護キャップ層の形成方法の一例を、図3Aのプロセスフロー図に示す。図4Aから図4Eは、このプロセスから得られる素子構造の横断面図を示す。ここに示す方法は、多くの種類の装置で実施可能であり、一部の実施形態ではPECVD(プラズマ化学気相成長)装置が好適である。一部の実施形態では、PECVD装置は、高周波(HF)および低周波(LF)プラズマ生成源を提供することができる。
一般的に、保護キャップの形成は、揮発性の前駆体を導入させ、反応条件(チャンバ温度、前駆体の流量、露呈時間等)を制御することのできる任意の種類の装置で実行可能である。処理301から311を、基板を周囲環境に曝すことなく行うことができると、基板を不注意に酸化および汚染させることがないので、一般的には好適である。一実施形態では、処理301から311が、真空状態を解除することなく実質的に1つのモジュールで行われる。一部の実施形態では、処理301から311を、1つのチャンバ内に複数のステーションを有する、または複数のチャンバを有する1つのCVD(好適にはPECVD)装置で行う。カリフォルニア州のサンノゼのNovellus Systems,Inc社から入手可能なVECTOR(登録商標)PECVD装置が適切な装置の一例である。
ボロンでドーピングされた保護キャップと、ボロンおよび窒素を含むパッシベーション層とを含む銅のインターコネクトの製造を、実験例により説明する。
Claims (23)
- 半導体素子構造を形成する方法であって、
(a)酸化物を含まない銅または銅合金の露呈領域と誘電体の露呈領域とを含む基板を、アルミニウムを含む化合物に、少なくとも約摂氏350度の基板温度で曝して、前記誘電体および前記銅または銅合金の層の両方の上にアルミニウムを含む第1の層を形成する工程と、
(b)前記第1の層の少なくとも一部を化学的に修正して、アルミニウムを含むパッシベーション層を形成する工程と、
(c)前記パッシベーション層の上に誘電体層を堆積させる工程と
を備える方法。 - 前記工程(a)の前に、前記基板の表面を洗浄して、前記銅または銅合金の表面から銅酸化物を完全に除去する工程を備える請求項1に記載の方法。
- 前記洗浄は、直接プラズマ処理、遠隔プラズマ処理、UV処理、およびN2、NH3、およびH2のうち少なくともいずれか1つを含むガスにおける熱処理からなる群から選択される請求項2に記載の方法。
- 前記工程(a)は、プラズマを用いずに、前記基板を有機アルミニウム化合物に曝す工程を有する請求項1に記載の方法。
- 前記工程(a)は、前記基板を、少なくとも約摂氏400度の基板温度で有機アルミニウム化合物に曝す工程を有する請求項4に記載の方法。
- 前記有機アルミニウム化合物はトリメチルアルミニウムである請求項2に記載の方法。
- 前記工程(b)は、前記銅または銅合金の上の前記第1の層を実質的に完全にパッシベーションすることで、アルミニウムを前記銅内に実質的に拡散させない工程を有する請求項1に記載の方法。
- 前記工程(b)は、前記銅または銅合金の上の前記第1の層を部分的にパッシベーションすることで、アルミニウムを部分的に前記銅内に拡散させる工程を有する請求項1に記載の方法。
- 前記工程(b)における前記パッシベーション層の形成は、Al−N結合を含む実質的に不動である化合物を形成することを含む請求項1に記載の方法。
- 前記工程(b)は、窒素を含む物質で前記基板を処理する工程を有し、前記処理は、直接プラズマ処理、遠隔プラズマ処理、UV処理、および熱処理からなる群から選択される請求項9に記載の方法。
- 前記工程(b)は、プラズマを用いずに、前記基板を、窒素を含む物質で処理する工程を有する請求項10に記載の方法。
- 前記誘電体はULK誘電体である請求項11に記載の方法。
- 前記工程(b)における前記パッシベーション層の形成は、Al−O結合を含む実質的に不動である化合物を形成することを含む請求項1に記載の方法。
- 前記工程(b)は、酸素を含む物質で前記基板を処理する工程を有し、前記処理は、直接プラズマ処理、遠隔プラズマ処理、UV処理、および熱処理からなる群から選択される請求項13に記載の方法。
- 前記工程(b)は、プラズマを用いずに、前記基板を、酸素を含む物質に曝す工程を有する請求項13に記載の方法。
- 前記誘電体はULK誘電体である請求項15に記載の方法。
- 前記工程(b)は、前記基板を、O2、N2O、CO2、およびO3からなる群から選択される、酸素を含む物質で処理する工程を有する請求項13に記載の方法。
- 前記工程(a)、(b)、および(c)は、同じ化学気相成長(CVD)装置で行われる請求項1に記載の方法。
- 前記工程(c)で堆積される前記誘電体層は、エッチングストップ誘電体層である請求項1に記載の方法。
- 前記エッチングストップ誘電体層は、窒化珪素および炭化珪素からなる群から選択されるドーピングされた、またはドーピングされない材料を含む請求項19に記載の方法。
- 前記工程(c)で堆積される前記誘電体層は、前記パッシベーション層の上に直接堆積される層間誘電体(ILD)層である請求項1に記載の方法。
- 半導体素子構造を形成する装置であって、
(a)気体の、または揮発性の金属を含む反応物を導入する入口を有するプロセスチャンバと、
(b)前記プロセスチャンバ内でウェハ基板の上に金属を含む層を堆積する間に、前記ウェハを支持するウェハ支持部と、
(c)プログラム命令を有するコントローラとを備え、
前記プログラム命令は、
(i)露呈した銅または銅合金と露呈した誘電体とを含む基板を処理して、前記露呈した銅または銅合金から酸化物を除去させるプログラム命令と、
(ii)酸化物を含まない銅または銅合金の露呈領域と誘電体の露呈領域とを含む前記基板を、アルミニウムを含む反応物に、少なくとも約摂氏350度の基板温度で曝して、前記誘電体および第1の金属の両方の上にアルミニウムを含む第1の層を形成させるプログラム命令と、
(iii)前記第1の層の少なくとも一部を化学的に修正して、アルミニウムを含むパッシベーション層を形成させるプログラム命令と
を含む装置。 - 前記コントローラのプログラム命令(ii)は、プラズマを用いずに、前記アルミニウムを含む反応物に前記基板を曝させる命令を含む請求項22に記載の装置。
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JP2019531604A (ja) * | 2016-10-02 | 2019-10-31 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ルテニウムライナーと共に銅のエレクトロマイグレーションを改善するドープされた選択的な金属キャップ |
JP6998945B2 (ja) | 2016-10-02 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | ルテニウムライナーと共に銅のエレクトロマイグレーションを改善するドープされた選択的な金属キャップ |
US11373903B2 (en) | 2016-10-02 | 2022-06-28 | Applied Materials, Inc. | Doped selective metal caps to improve copper electromigration with ruthenium liner |
CN109844930B (zh) * | 2016-10-02 | 2024-03-08 | 应用材料公司 | 以钌衬垫改善铜电迁移的经掺杂选择性金属覆盖 |
US11990368B2 (en) | 2016-10-02 | 2024-05-21 | Applied Materials, Inc. | Doped selective metal caps to improve copper electromigration with ruthenium liner |
CN111769074A (zh) * | 2019-04-02 | 2020-10-13 | 长鑫存储技术有限公司 | 半导体互连结构及其制作方法 |
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JP5773306B2 (ja) | 2015-09-02 |
CN102130046B (zh) | 2015-01-14 |
KR101742825B1 (ko) | 2017-06-01 |
KR20110084130A (ko) | 2011-07-21 |
CN102130046A (zh) | 2011-07-20 |
TW201138024A (en) | 2011-11-01 |
TWI612618B (zh) | 2018-01-21 |
TW201709418A (zh) | 2017-03-01 |
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