TWI612618B - 用於鑲嵌互連件中的電遷移電阻改進的界面層 - Google Patents

用於鑲嵌互連件中的電遷移電阻改進的界面層 Download PDF

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Publication number
TWI612618B
TWI612618B TW100101507A TW100101507A TWI612618B TW I612618 B TWI612618 B TW I612618B TW 100101507 A TW100101507 A TW 100101507A TW 100101507 A TW100101507 A TW 100101507A TW I612618 B TWI612618 B TW I612618B
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Taiwan
Prior art keywords
layer
copper
dielectric
substrate
metal
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TW100101507A
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English (en)
Chinese (zh)
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TW201138024A (en
Inventor
亞那達 班尼吉
喬治 安德魯 安東尼力
珍妮佛 歐勞夫林
曼地炎 史林雷
史拉文德克 巴特 凡
西莎薩伊 瓦拉達拉詹
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諾菲勒斯系統公司
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Priority claimed from US12/688,154 external-priority patent/US8268722B2/en
Priority claimed from US12/689,803 external-priority patent/US7858510B1/en
Application filed by 諾菲勒斯系統公司 filed Critical 諾菲勒斯系統公司
Publication of TW201138024A publication Critical patent/TW201138024A/zh
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Publication of TWI612618B publication Critical patent/TWI612618B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW100101507A 2010-01-15 2011-01-14 用於鑲嵌互連件中的電遷移電阻改進的界面層 TWI612618B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/688,154 2010-01-15
US12/688,154 US8268722B2 (en) 2009-06-03 2010-01-15 Interfacial capping layers for interconnects
US12/689,803 2010-01-19
US12/689,803 US7858510B1 (en) 2008-02-28 2010-01-19 Interfacial layers for electromigration resistance improvement in damascene interconnects

Publications (2)

Publication Number Publication Date
TW201138024A TW201138024A (en) 2011-11-01
TWI612618B true TWI612618B (zh) 2018-01-21

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW100101507A TWI612618B (zh) 2010-01-15 2011-01-14 用於鑲嵌互連件中的電遷移電阻改進的界面層
TW105123303A TW201709418A (zh) 2010-01-15 2011-01-14 用於鑲嵌互連件中的電遷移電阻改進的界面層

Family Applications After (1)

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Country Status (4)

Country Link
JP (1) JP5773306B2 (enExample)
KR (1) KR101742825B1 (enExample)
CN (1) CN102130046B (enExample)
TW (2) TWI612618B (enExample)

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US7727881B1 (en) 2004-11-03 2010-06-01 Novellus Systems, Inc. Protective self-aligned buffer layers for damascene interconnects
US7727880B1 (en) 2004-11-03 2010-06-01 Novellus Systems, Inc. Protective self-aligned buffer layers for damascene interconnects
WO2012167141A2 (en) 2011-06-03 2012-12-06 Novellus Systems, Inc. Metal and silicon containing capping layers for interconnects
CN104008995B (zh) * 2013-02-22 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法
EP2965347A4 (en) * 2013-03-05 2017-02-15 Entegris, Inc. Ion implantation compositions, systems, and methods
WO2015013266A1 (en) * 2013-07-24 2015-01-29 Applied Materials, Inc Cobalt substrate processing systems, apparatus, and methods
CN104576514B (zh) * 2013-10-29 2017-11-24 中芯国际集成电路制造(上海)有限公司 半导体器件的制备方法
CN104637864B (zh) * 2013-11-14 2017-11-24 中芯国际集成电路制造(上海)有限公司 提高数据保持能力的方法
US9368448B2 (en) * 2013-12-20 2016-06-14 Applied Materials, Inc. Metal-containing films as dielectric capping barrier for advanced interconnects
US9465071B2 (en) 2014-03-04 2016-10-11 Mediatek Inc. Method and apparatus for generating featured scan pattern
US10319908B2 (en) * 2014-05-01 2019-06-11 Crossbar, Inc. Integrative resistive memory in backend metal layers
US9633896B1 (en) 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films
WO2018063815A1 (en) * 2016-10-02 2018-04-05 Applied Materials, Inc. Doped selective metal caps to improve copper electromigration with ruthenium liner
US9859153B1 (en) * 2016-11-14 2018-01-02 Lam Research Corporation Deposition of aluminum oxide etch stop layers
CN107256845A (zh) * 2017-05-25 2017-10-17 上海集成电路研发中心有限公司 一种铜互连结构及其制造方法
US20190127212A1 (en) * 2017-10-31 2019-05-02 Texas Instruments Incorporated Forming a passivation coating for mems devices
US10741440B2 (en) * 2018-06-05 2020-08-11 Lam Research Corporation Metal liner passivation and adhesion enhancement by zinc doping
US10707119B1 (en) * 2019-01-14 2020-07-07 Globalfoundries Inc. Interconnect structures with airgaps and dielectric-capped interconnects
CN111769074B (zh) * 2019-04-02 2024-09-27 长鑫存储技术有限公司 半导体互连结构及其制作方法
IL296563A (en) 2020-04-21 2022-11-01 Praxair Technology Inc Novel methods for gas phase selective etching of silicon-germanium layers
CN114429990A (zh) * 2020-10-29 2022-05-03 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11581258B2 (en) * 2021-01-13 2023-02-14 Nanya Technology Corporation Semiconductor device structure with manganese-containing interconnect structure and method for forming the same
US11961735B2 (en) * 2021-06-04 2024-04-16 Tokyo Electron Limited Cyclic plasma processing

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TW522444B (en) * 2000-09-14 2003-03-01 Texas Instruments Inc Method for forming a self-aligned copper capping diffusion barrier
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US7576006B1 (en) * 2004-11-03 2009-08-18 Novellus Systems, Inc. Protective self-aligned buffer layers for damascene interconnects
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TW522444B (en) * 2000-09-14 2003-03-01 Texas Instruments Inc Method for forming a self-aligned copper capping diffusion barrier
US6518167B1 (en) * 2002-04-16 2003-02-11 Advanced Micro Devices, Inc. Method of forming a metal or metal nitride interface layer between silicon nitride and copper
US7576006B1 (en) * 2004-11-03 2009-08-18 Novellus Systems, Inc. Protective self-aligned buffer layers for damascene interconnects
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TW200941644A (en) * 2007-09-28 2009-10-01 Tel Epion Inc Method to improve a copper/dielectric interface in semiconductor devices

Also Published As

Publication number Publication date
TW201138024A (en) 2011-11-01
JP5773306B2 (ja) 2015-09-02
CN102130046A (zh) 2011-07-20
TW201709418A (zh) 2017-03-01
KR101742825B1 (ko) 2017-06-01
CN102130046B (zh) 2015-01-14
KR20110084130A (ko) 2011-07-21
JP2011146711A (ja) 2011-07-28

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