TWI456659B - 含矽絕緣膜之膜形成方法與設備 - Google Patents

含矽絕緣膜之膜形成方法與設備 Download PDF

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TWI456659B
TWI456659B TW098102852A TW98102852A TWI456659B TW I456659 B TWI456659 B TW I456659B TW 098102852 A TW098102852 A TW 098102852A TW 98102852 A TW98102852 A TW 98102852A TW I456659 B TWI456659 B TW I456659B
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gas
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supply
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TW200941577A (en
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Kazuhide Hasebe
Shigeru Nakajima
Jun Ogawa
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Tokyo Electron Ltd
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Claims (20)

  1. 一種半導體製程用之膜形成方法，用於在一處理場中利用CVD形成一含矽絕緣膜於一目標基板上，將該處理場配置成選擇性地供給含有二異丙胺基矽烷氣體之一第一處理氣體、及含有一氧化氣體或氮化氣體之一第二處理氣體，安排該方法以執行一循環複數次，以層疊由各次形成之薄膜，藉此形成具有一預定厚度之該含矽絕緣膜，該循環交替地包含：一第一步驟，其執行該第一處理氣體對該處理場的供給，同時維持該第二處理氣體對該處理場之供給的一關閉狀態，藉此在該目標基板之一表面上形成含有矽之一吸附層；以及一第二步驟，其執行該第二處理氣體對該處理場的供給，同時維持該第一處理氣體對該處理場之供給的一關閉狀態，藉此氧化或氮化該目標基板之該表面上的該吸附層，該第二步驟包含供給該第二處理氣體至該處理場，同時由一激發機構激發該第二處理氣體的一激發期。
  2. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中安排該第一步驟，以將該處理場之溫度設定在-32℃至300℃。
  3. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中安排該第一步驟，以將該處理場之溫度設定在室溫至200℃。
  4. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中安排該第一及第二步驟，以將該處理場設定在相同之溫度。
  5. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中該第二處理氣體包含從由氧、臭氧、及水蒸氣所組成之群組中選擇出之一氧化氣體。
  6. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中該第二處理氣體包含從由氨、二氧化氮、一氧化氮、及氮所組成之群組中選擇出之一氮化氣體。
  7. 如申請專利範圍第5項之半導體製程用之膜形成方法，其中該第二處理氣體包含作為一氧化氣體之氧，且安排該第一及第二步驟，以將該處理場設定在位於-32℃至200℃之範圍內的相同溫度。
  8. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中安排該第一步驟，以將該處理場之壓力設定在0.133Pa至13.3kPa。
  9. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中安排該第一步驟，以將二異丙胺基矽烷以10sccm至10slm之流速供給至該處理場。
  10. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中安排該第二步驟，以將該處理場之壓力設定在0.133Pa至13.3kPa。
  11. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中安排該第二步驟，以將該氧化氣體或氮化氣體以1sccm至10slm之流速供給至該處理場。
  12. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中將該激發機構配置成：使用從由電漿、催化劑、紫外線、熱量、及磁力所組成之群組中選擇之一媒介激發該第二處理氣體。
  13. 如申請專利範圍第12項之半導體製程用之膜形成方法，其中該激發機構包含一電漿生成部，其形成該第二處理氣體之一供給系統的局部，且貼附至封閉該處理場之一反應室。
  14. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中該循環更包含一中間步驟，該中間步驟係於該第二步驟之後由該處理場排放氣體，同時維持該第一及第二處理氣體對該處理場之供給的關閉狀態。
  15. 如申請專利範圍第14項之半導體製程用之膜形成方法，其中該循環更包含一中間步驟，該中間步驟係於該第一與第二步驟之間由該處理場排放氣體，同時維持該第一及第二處理氣體對該處理場之供給的關閉狀態。
  16. 如申請專利範圍第14項之半導體製程用之膜形成方法，其中安排該循環，以透過該循環持續地由該處理場排放氣體。
  17. 如申請專利範圍第16項之半導體製程用之膜形成方法，其中該中間步驟包含供給一惰性氣體至該處理場之一週期。
  18. 如申請專利範圍第1項之半導體製程用之膜形成方法，其中將該處理場配置成以間隔方式在一垂直方向上容納複數個目標基板，且該目標基板係由圍繞該處理場設置之一加熱器所加熱。
  19. 一種半導體製程用之膜形成設備，用於形成一含矽絕緣膜，該設備包含：一反應室，其具有被配置成容納一目標基板之一處理場；一支承構件，其被配置成支撐該處理場內側之該目標基板；一加熱器，其被配置成加熱該處理場內側之該目標基板；一排氣系統，其被配置成由該處理場排放氣體；一第一處理氣體供給電路，其被配置成對該處理場供給含有二異丙胺基矽烷之一第一處理氣體；一第二處理氣體供給電路，其被配置成對該處理場供給含有一氧化氣體或氮化氣體之一第二處理氣體；一激發機構，其被配置成激發待供給至該處理場之該第二處理氣體；以及一控制部，其被配置成控制該設備之一操作，其中，為了使用CVD在該目標基板上形成一含矽絕緣膜，預先設定該控制部，以執行一循環複數次，而使各次形成之薄膜層疊，藉此形成具有一預定厚度之該含矽絕緣膜，該循環交替地包含；一第一步驟，其執行該第一處理氣體對該處理場的供給，同時維持該第二處理氣體對該處理場之供給的一關閉狀態，藉此在該目標基板之一表面上形成含矽之一吸附層；以及一第二步驟，其執行該第二處理氣體對該處理場的供給，同時維持該第一處理氣體對該處理場之供給的一關閉狀態，藉此氧化或氮化該目標基板之該表面上的該吸附層，該第二步驟包含一激發週期，該激發週期係供給該第二處理氣體至該處理場，同時利用該激發機構激發該第二處理氣體。
  20. 一種包含在一處理器上實施之程式指令的電腦可讀式媒體，其係用於一半導體製程之一膜形成設備，以在配置成選擇性地供給含有二異丙胺基矽烷之一第一處理氣體、及含有一氧化氣體或氮化氣體之一第二處理氣體的一處理場中，使用CVD在一目標基板上形成一含矽絕緣膜，其中當該處理器執行該程式指令時，該程式指令控制該膜形成設備以執行一循環複數次，而使各次形成之薄膜層疊，藉此形成具有一預定厚度之該含矽絕緣膜，該循環交替地包含：一第一步驟，其執行該第一處理氣體對該處理場的供給，同時維持該第二處理氣體對該處理場之供給的一關閉狀態，藉此在該目標基板之一表面上形成含矽之一吸附層；以及一第二步驟，其執行該第二處理氣體對該處理場的供給，同時維持該第一處理氣體對該處理場之供給的一關閉狀態，藉此氧化或氮化該目標基板之該表面上的該吸附層，該第二步驟包含一激發週期，該激發週期係供給該第二處理氣體至該處理場，同時利用一激發機構激發該第二處理氣體。
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