JP2009206500A - 薄膜形成方法、薄膜形成装置及びプログラム - Google Patents
薄膜形成方法、薄膜形成装置及びプログラム Download PDFInfo
- Publication number
- JP2009206500A JP2009206500A JP2009002550A JP2009002550A JP2009206500A JP 2009206500 A JP2009206500 A JP 2009206500A JP 2009002550 A JP2009002550 A JP 2009002550A JP 2009002550 A JP2009002550 A JP 2009002550A JP 2009206500 A JP2009206500 A JP 2009206500A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- reaction chamber
- thin film
- film forming
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 claims abstract description 147
- 239000010408 film Substances 0.000 claims abstract description 83
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 48
- 239000001301 oxygen Substances 0.000 claims abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 29
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 155
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 43
- 238000001179 sorption measurement Methods 0.000 claims description 42
- 230000001590 oxidative effect Effects 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 27
- 238000005121 nitriding Methods 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229960001730 nitrous oxide Drugs 0.000 claims description 3
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 53
- 235000012431 wafers Nutrition 0.000 description 62
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 238000010926 purge Methods 0.000 description 9
- 238000010790 dilution Methods 0.000 description 6
- 239000012895 dilution Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【課題】低温下で、良質な薄膜を形成することができる薄膜形成方法、薄膜形成装置及びプログラムを提供する。
【解決手段】まず、室温下の反応管2内にジイソプロピルアミノシランを供給し、半導体ウエハWの表面にSiを吸着させる。続いて、室温下の反応管2内に酸素ラジカルを供給して、吸着したSiを酸化させ、半導体ウエハWにシリコン酸化膜を形成する。そして、この処理を複数回繰り返す。これにより、半導体ウエハWに所望厚のシリコン酸化膜が形成される。
【選択図】図1
Description
被処理体が収容された反応室内に、ジイソプロピルアミノシランを供給し、前記被処理体にシリコンを含むシリコン含有物質を吸着させる吸着ステップと、
前記吸着ステップで吸着されたシリコン含有物質に、活性化された酸化ガスまたは窒化ガスを供給し、当該シリコン含有物質を酸化または窒化させ、前記被処理体にシリコン酸化膜またはシリコン窒化膜を形成する膜形成ステップと、を備え、
前記吸着ステップと、前記膜形成ステップとを、複数回繰り返す、ことを特徴とする。
前記吸着ステップでは、前記反応室内を、例えば、室温〜200℃に設定する。
前記吸着ステップにおける反応室内の温度と前記膜形成ステップにおける反応室内の温度とを同一温度に設定するが好ましい。
前記膜形成ステップでは、前記窒化ガスに、例えば、アンモニア、一酸化二窒素、一酸化窒素、または、窒素を用いる。
前記吸着ステップでは、例えば、前記反応室内に前記ジイソプロピルアミノシランを10sccm〜10slm供給する。
前記膜形成ステップでは、例えば、前記反応室に酸化ガスまたは窒化ガスを1sccm〜10slm供給する。
被処理体を収容する反応室と、
前記反応室内に、ジイソプロピルアミノシランを供給する第1の供給手段と、
前記被処理体に活性化された酸化ガスまたは窒化ガスを供給する第2の供給手段と、
装置の各部を制御する制御手段と、を備え、
前記制御手段は、
前記第1の供給手段を制御して、前記反応室内にジイソプロピルアミノシランを供給し、前記被処理体にシリコンを含むシリコン含有物質を吸着させ、
前記第2の供給手段を制御して、前記吸着されたシリコン含有物質に活性化された酸化ガスまたは窒化ガスを供給し、当該シリコン含有物質を酸化または窒化させ、前記被処理体にシリコン酸化膜またはシリコン窒化膜を形成する、
処理を複数回繰り返す、ことを特徴とする。
コンピュータを、
被処理体を収容する反応室内に、ジイソプロピルアミノシランを供給する第1の供給手段、
前記被処理体に活性化された酸化ガスまたは窒化ガスを供給する第2の供給手段、
前記第1の供給手段を制御して、前記反応室内にジイソプロピルアミノシランを供給し、前記被処理体にシリコンを含むシリコン含有物質を吸着させ、前記第2の供給手段を制御して、前記吸着されたシリコン含有物質に活性化された酸化ガスまたは窒化ガスを供給し、当該シリコン含有物質を酸化または窒化させ、前記被処理体にシリコン酸化膜またはシリコン窒化膜を形成する、処理を複数回繰り返す制御手段、
として機能させることを特徴とする。
圧力計(群)123は、反応管2内及び排気管内などの各部の圧力を測定し、その測定値を制御部100に通知する。
真空ポンプ127は、排気管に接続され、反応管2内のガスを排気する。
RAM113は、CPU115のワークエリアなどとして機能する。
バス116は、各部の間で情報を伝達する。
2 反応管
3 排気部
4 排気口
5 蓋体
6 ウエハボート
7 昇温用ヒータ
8、9 処理ガス供給管
10 プラズマ発生部
11 電極
100 制御部
111 レシピ記憶部
112 ROM
113 RAM
114 I/Oポート
115 CPU
116 バス
121 操作パネル
122 温度センサ
123 圧力計
124 ヒータコントローラ
125 MFC
126 バルブ制御部
127 真空ポンプ
128 ボートエレベータ
129 プラズマ制御部
W 半導体ウエハ
Claims (14)
- 被処理体が収容された反応室内に、ジイソプロピルアミノシランを供給し、前記被処理体にシリコンを含むシリコン含有物質を吸着させる吸着ステップと、
前記吸着ステップで吸着されたシリコン含有物質に、活性化された酸化ガスまたは窒化ガスを供給し、当該シリコン含有物質を酸化または窒化させ、前記被処理体にシリコン酸化膜またはシリコン窒化膜を形成する膜形成ステップと、を備え、
前記吸着ステップと、前記膜形成ステップとを、複数回繰り返す、ことを特徴とする薄膜形成方法。 - 前記吸着ステップでは、前記反応室内を−32℃〜300℃に設定する、ことを特徴とする請求項1に記載の薄膜形成方法。
- 前記吸着ステップでは、前記反応室内を室温〜200℃に設定する、ことを特徴とする請求項1に記載の薄膜形成方法。
- 前記吸着ステップにおける反応室内の温度と前記膜形成ステップにおける反応室内の温度とを同一温度に設定する、ことを特徴とする請求項1乃至3のいずれか1項に記載の薄膜形成方法。
- 前記膜形成ステップでは、前記酸化ガスに、酸素、オゾン、または、水蒸気を用いる、ことを特徴とする請求項1乃至4のいずれか1項に記載の薄膜形成方法。
- 前記膜形成ステップでは、前記窒化ガスにアンモニア、一酸化二窒素、一酸化窒素、または、窒素を用いる、ことを特徴とする請求項1乃至4のいずれか1項に記載の薄膜形成方法。
- 前記反応室内には、複数の被処理体が収容され、
前記吸着ステップでは、前記複数の被処理体にシリコン含有物質を吸着させ、
前記膜形成ステップでは、前記吸着ステップで吸着されたシリコン含有物質を酸化または窒化させ、前記複数の被処理体にシリコン酸化膜またはシリコン窒化膜を形成する、ことを特徴とする請求項1乃至6のいずれか1項に記載の薄膜形成方法。 - 前記吸着ステップでは、前記反応室内を0.133Pa〜13.3kPaに設定する、ことを特徴とする請求項1乃至7のいずれか1項に記載の薄膜形成方法。
- 前記吸着ステップでは、前記反応室内に前記ジイソプロピルアミノシランを10sccm〜10slm供給する、ことを特徴とする請求項1乃至8のいずれか1項に記載の薄膜形成方法。
- 前記膜形成ステップでは、前記反応室内を0.133Pa〜13.3kPaに設定する、ことを特徴とする請求項1乃至9のいずれか1項に記載の薄膜形成方法。
- 前記膜形成ステップでは、前記反応室に酸化ガスまたは窒化ガスを1sccm〜10slm供給する、ことを特徴とする請求項1乃至10のいずれか1項に記載の薄膜形成方法。
- 前記膜形成ステップでは、プラズマ、触媒、UV、熱、または、磁力により酸化ガスまたは窒化ガスを活性化し、活性化した酸化ガスまたは窒化ガスを前記反応室内に供給する、ことを特徴とする請求項1乃至11のいずれか1項に記載の薄膜形成方法。
- 被処理体を収容する反応室と、
前記反応室内に、ジイソプロピルアミノシランを供給する第1の供給手段と、
前記被処理体に活性化された酸化ガスまたは窒化ガスを供給する第2の供給手段と、
装置の各部を制御する制御手段と、を備え、
前記制御手段は、
前記第1の供給手段を制御して、前記反応室内にジイソプロピルアミノシランを供給し、前記被処理体にシリコンを含むシリコン含有物質を吸着させ、
前記第2の供給手段を制御して、前記吸着されたシリコン含有物質に活性化された酸化ガスまたは窒化ガスを供給し、当該シリコン含有物質を酸化または窒化させ、前記被処理体にシリコン酸化膜またはシリコン窒化膜を形成する、
処理を複数回繰り返す、ことを特徴とする薄膜形成装置。 - コンピュータを、
被処理体を収容する反応室内に、ジイソプロピルアミノシランを供給する第1の供給手段、
前記被処理体に活性化された酸化ガスまたは窒化ガスを供給する第2の供給手段、
前記第1の供給手段を制御して、前記反応室内にジイソプロピルアミノシランを供給し、前記被処理体にシリコンを含むシリコン含有物質を吸着させ、前記第2の供給手段を制御して、前記吸着されたシリコン含有物質に活性化された酸化ガスまたは窒化ガスを供給し、当該シリコン含有物質を酸化または窒化させ、前記被処理体にシリコン酸化膜またはシリコン窒化膜を形成する、処理を複数回繰り返す制御手段、
として機能させるためのプログラム。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009002550A JP4959733B2 (ja) | 2008-02-01 | 2009-01-08 | 薄膜形成方法、薄膜形成装置及びプログラム |
TW098102852A TWI456659B (zh) | 2008-02-01 | 2009-01-23 | 含矽絕緣膜之膜形成方法與設備 |
US12/320,535 US7923378B2 (en) | 2008-02-01 | 2009-01-28 | Film formation method and apparatus for forming silicon-containing insulating film |
KR1020090007354A KR101247828B1 (ko) | 2008-02-01 | 2009-01-30 | 반도체 처리용 성막 방법 및 성막 장치와, 컴퓨터로 판독 가능한 매체 |
CN2009101267574A CN101497993B (zh) | 2008-02-01 | 2009-02-01 | 薄膜形成方法和用于形成含硅绝缘膜的装置 |
US13/040,565 US8357619B2 (en) | 2008-02-01 | 2011-03-04 | Film formation method for forming silicon-containing insulating film |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008022279 | 2008-02-01 | ||
JP2008022279 | 2008-02-01 | ||
JP2009002550A JP4959733B2 (ja) | 2008-02-01 | 2009-01-08 | 薄膜形成方法、薄膜形成装置及びプログラム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009206500A true JP2009206500A (ja) | 2009-09-10 |
JP4959733B2 JP4959733B2 (ja) | 2012-06-27 |
Family
ID=40939256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009002550A Active JP4959733B2 (ja) | 2008-02-01 | 2009-01-08 | 薄膜形成方法、薄膜形成装置及びプログラム |
Country Status (5)
Country | Link |
---|---|
US (2) | US7923378B2 (ja) |
JP (1) | JP4959733B2 (ja) |
KR (1) | KR101247828B1 (ja) |
CN (1) | CN101497993B (ja) |
TW (1) | TWI456659B (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011091362A (ja) * | 2009-09-28 | 2011-05-06 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2011181903A (ja) * | 2010-02-05 | 2011-09-15 | Tokyo Electron Ltd | アモルファスカーボン膜を含む積層構造を形成する方法及び装置 |
JP2011187934A (ja) * | 2010-02-15 | 2011-09-22 | Tokyo Electron Ltd | 成膜方法、成膜装置、および成膜装置の使用方法 |
JP2011209025A (ja) * | 2010-03-29 | 2011-10-20 | Tokyo Electron Ltd | 粒子検出方法及び粒子検出装置 |
JP2011243620A (ja) * | 2010-05-14 | 2011-12-01 | Tokyo Electron Ltd | 成膜方法および成膜装置 |
JP2012146955A (ja) * | 2010-12-21 | 2012-08-02 | Tokyo Electron Ltd | 窒化シリコン膜の成膜方法及び成膜装置 |
JP2014064039A (ja) * | 2013-12-25 | 2014-04-10 | Tokyo Electron Ltd | 成膜方法および成膜装置 |
JP2014146828A (ja) * | 2010-02-15 | 2014-08-14 | Tokyo Electron Ltd | 成膜方法、成膜装置、および成膜装置の使用方法 |
JP2014175509A (ja) * | 2013-03-11 | 2014-09-22 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
KR20220086483A (ko) | 2020-12-16 | 2022-06-23 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
KR20230007289A (ko) * | 2016-12-13 | 2023-01-12 | 도쿄엘렉트론가부시키가이샤 | 질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 |
US11637025B2 (en) | 2016-12-13 | 2023-04-25 | Tokyo Electron Limited | Apparatus for selectively etching first region made of silicon nitride against second region made of silicon oxide |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5616591B2 (ja) * | 2008-06-20 | 2014-10-29 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US20110256734A1 (en) | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
US8637411B2 (en) * | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
US9076646B2 (en) | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
US9373500B2 (en) | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
US8476099B2 (en) | 2010-07-22 | 2013-07-02 | International Business Machines Corporation | Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region |
US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
JP5692850B2 (ja) * | 2010-12-28 | 2015-04-01 | 東京エレクトロン株式会社 | 薄膜形成方法、薄膜形成装置及びプログラム |
EP2484803B1 (en) * | 2011-02-07 | 2017-03-29 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of deposition of Al2O3/SiO2 stacks, from aluminium and silicon precursors |
EP2484801B1 (en) * | 2011-02-07 | 2017-08-23 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of deposition of Al2O3/SiO2 stacks, from TMA or TEA and silicon precursors |
EP2484802B1 (en) * | 2011-02-07 | 2017-03-29 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of deposition of Al2O3/SiO2 stacks from DMAI and silicon precursors |
CN103476965B (zh) * | 2011-02-07 | 2016-03-23 | 乔治洛德方法研究和开发液化空气有限公司 | 由铝和硅前体沉积Al2O3/SiO2叠层的方法 |
JP5886531B2 (ja) * | 2011-02-24 | 2016-03-16 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
US8647993B2 (en) | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
JP6199292B2 (ja) * | 2011-09-23 | 2017-09-20 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | プラズマ活性化されるコンフォーマル誘電体膜 |
US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
KR102207992B1 (ko) | 2012-10-23 | 2021-01-26 | 램 리써치 코포레이션 | 서브-포화된 원자층 증착 및 등각막 증착 |
JP6538300B2 (ja) | 2012-11-08 | 2019-07-03 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 感受性基材上にフィルムを蒸着するための方法 |
SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
JP2014209558A (ja) * | 2013-03-27 | 2014-11-06 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法、及び、シリコン酸化膜の形成装置 |
US20140319488A1 (en) * | 2013-04-25 | 2014-10-30 | Veeco Ald Inc. | Thin film formation for device sensitive to environment |
US9214334B2 (en) | 2014-02-18 | 2015-12-15 | Lam Research Corporation | High growth rate process for conformal aluminum nitride |
CN104911565B (zh) * | 2014-03-11 | 2017-12-22 | 中微半导体设备(上海)有限公司 | 一种化学气相沉积装置 |
US9478411B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
US9478438B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
WO2016143025A1 (ja) * | 2015-03-09 | 2016-09-15 | 東芝三菱電機産業システム株式会社 | 太陽電池の製造方法 |
US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
US10526701B2 (en) | 2015-07-09 | 2020-01-07 | Lam Research Corporation | Multi-cycle ALD process for film uniformity and thickness profile modulation |
JP6540571B2 (ja) * | 2016-03-24 | 2019-07-10 | 豊田合成株式会社 | 半導体装置の製造方法及び半導体装置 |
KR102306570B1 (ko) * | 2016-06-01 | 2021-09-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 3d 낸드 응용들을 위한 터널 산화물의 고압 암모니아 질화 |
US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
US10354923B2 (en) | 2017-05-31 | 2019-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method for atomic layer deposition of a dielectric over a substrate |
US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
JP7203588B2 (ja) * | 2018-12-17 | 2023-01-13 | 東京エレクトロン株式会社 | 熱処理装置 |
JP7097809B2 (ja) * | 2018-12-28 | 2022-07-08 | 東京エレクトロン株式会社 | ガス導入構造、処理装置及び処理方法 |
US11643724B2 (en) * | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007038050A2 (en) * | 2005-09-21 | 2007-04-05 | Applied Materials, Inc. | Treatment processes for a batch ald reactor |
JP2007318142A (ja) * | 2006-05-23 | 2007-12-06 | Air Products & Chemicals Inc | 有機アミノシラン前駆体から酸化ケイ素膜を製造するための方法 |
WO2009039251A1 (en) * | 2007-09-18 | 2009-03-26 | L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon-containing films |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4904621A (en) * | 1987-07-16 | 1990-02-27 | Texas Instruments Incorporated | Remote plasma generation process using a two-stage showerhead |
US5248636A (en) * | 1987-07-16 | 1993-09-28 | Texas Instruments Incorporated | Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation |
US4872938A (en) * | 1987-07-16 | 1989-10-10 | Texas Instruments Incorporated | Processing apparatus |
US4837113A (en) * | 1987-07-16 | 1989-06-06 | Texas Instruments Incorporated | Method for depositing compound from group II-VI |
US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US5935334A (en) * | 1996-11-13 | 1999-08-10 | Applied Materials, Inc. | Substrate processing apparatus with bottom-mounted remote plasma system |
AU2003256559A1 (en) | 2002-07-19 | 2004-02-09 | Aviza Technology, Inc. | Low temperature dielectric deposition using aminosilane and ozone |
JP5005170B2 (ja) * | 2002-07-19 | 2012-08-22 | エーエスエム アメリカ インコーポレイテッド | 超高品質シリコン含有化合物層の形成方法 |
KR20050018641A (ko) * | 2002-07-19 | 2005-02-23 | 에비자 테크놀로지, 인크. | 아미노실란 및 오존을 이용한 저온 유전체 증착 |
US6774040B2 (en) * | 2002-09-12 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for surface finishing a silicon film |
JP4382750B2 (ja) * | 2003-01-24 | 2009-12-16 | 東京エレクトロン株式会社 | 被処理基板上にシリコン窒化膜を形成するcvd方法 |
JP2004281853A (ja) | 2003-03-18 | 2004-10-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP4279176B2 (ja) * | 2004-03-02 | 2009-06-17 | 株式会社アルバック | シリコン窒化膜の形成方法 |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7678422B2 (en) * | 2006-12-13 | 2010-03-16 | Air Products And Chemicals, Inc. | Cyclic chemical vapor deposition of metal-silicon containing films |
US20080207007A1 (en) * | 2007-02-27 | 2008-08-28 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films |
KR101417728B1 (ko) * | 2008-03-12 | 2014-07-11 | 삼성전자주식회사 | 지르코늄 유기산질화막 형성방법 및 이를 이용하는 반도체장치 및 그 제조방법 |
JP2010183069A (ja) * | 2009-01-07 | 2010-08-19 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP5044579B2 (ja) * | 2009-01-27 | 2012-10-10 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム |
JP5514129B2 (ja) * | 2010-02-15 | 2014-06-04 | 東京エレクトロン株式会社 | 成膜方法、成膜装置、および成膜装置の使用方法 |
US8912353B2 (en) * | 2010-06-02 | 2014-12-16 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
JP5573772B2 (ja) * | 2010-06-22 | 2014-08-20 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP5692850B2 (ja) * | 2010-12-28 | 2015-04-01 | 東京エレクトロン株式会社 | 薄膜形成方法、薄膜形成装置及びプログラム |
-
2009
- 2009-01-08 JP JP2009002550A patent/JP4959733B2/ja active Active
- 2009-01-23 TW TW098102852A patent/TWI456659B/zh not_active IP Right Cessation
- 2009-01-28 US US12/320,535 patent/US7923378B2/en active Active
- 2009-01-30 KR KR1020090007354A patent/KR101247828B1/ko active IP Right Grant
- 2009-02-01 CN CN2009101267574A patent/CN101497993B/zh active Active
-
2011
- 2011-03-04 US US13/040,565 patent/US8357619B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007038050A2 (en) * | 2005-09-21 | 2007-04-05 | Applied Materials, Inc. | Treatment processes for a batch ald reactor |
JP2007318142A (ja) * | 2006-05-23 | 2007-12-06 | Air Products & Chemicals Inc | 有機アミノシラン前駆体から酸化ケイ素膜を製造するための方法 |
WO2009039251A1 (en) * | 2007-09-18 | 2009-03-26 | L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon-containing films |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011091362A (ja) * | 2009-09-28 | 2011-05-06 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2011181903A (ja) * | 2010-02-05 | 2011-09-15 | Tokyo Electron Ltd | アモルファスカーボン膜を含む積層構造を形成する方法及び装置 |
JP2014146828A (ja) * | 2010-02-15 | 2014-08-14 | Tokyo Electron Ltd | 成膜方法、成膜装置、および成膜装置の使用方法 |
JP2011187934A (ja) * | 2010-02-15 | 2011-09-22 | Tokyo Electron Ltd | 成膜方法、成膜装置、および成膜装置の使用方法 |
TWI460792B (zh) * | 2010-02-15 | 2014-11-11 | Tokyo Electron Ltd | 膜形成方法、膜形成設備及膜形成設備之使用方法 |
JP2011209025A (ja) * | 2010-03-29 | 2011-10-20 | Tokyo Electron Ltd | 粒子検出方法及び粒子検出装置 |
JP2011243620A (ja) * | 2010-05-14 | 2011-12-01 | Tokyo Electron Ltd | 成膜方法および成膜装置 |
JP2012146955A (ja) * | 2010-12-21 | 2012-08-02 | Tokyo Electron Ltd | 窒化シリコン膜の成膜方法及び成膜装置 |
JP2014175509A (ja) * | 2013-03-11 | 2014-09-22 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
JP2014064039A (ja) * | 2013-12-25 | 2014-04-10 | Tokyo Electron Ltd | 成膜方法および成膜装置 |
KR20230007289A (ko) * | 2016-12-13 | 2023-01-12 | 도쿄엘렉트론가부시키가이샤 | 질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 |
US11637025B2 (en) | 2016-12-13 | 2023-04-25 | Tokyo Electron Limited | Apparatus for selectively etching first region made of silicon nitride against second region made of silicon oxide |
KR102617192B1 (ko) * | 2016-12-13 | 2023-12-27 | 도쿄엘렉트론가부시키가이샤 | 질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 |
KR20220086483A (ko) | 2020-12-16 | 2022-06-23 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
Also Published As
Publication number | Publication date |
---|---|
CN101497993B (zh) | 2012-09-05 |
US7923378B2 (en) | 2011-04-12 |
CN101497993A (zh) | 2009-08-05 |
TW200941577A (en) | 2009-10-01 |
KR101247828B1 (ko) | 2013-03-26 |
US20090203227A1 (en) | 2009-08-13 |
TWI456659B (zh) | 2014-10-11 |
JP4959733B2 (ja) | 2012-06-27 |
KR20090084737A (ko) | 2009-08-05 |
US8357619B2 (en) | 2013-01-22 |
US20110151679A1 (en) | 2011-06-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4959733B2 (ja) | 薄膜形成方法、薄膜形成装置及びプログラム | |
JP5008957B2 (ja) | シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム | |
JP4456533B2 (ja) | シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム | |
JP4607637B2 (ja) | シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム | |
JP4916257B2 (ja) | 酸化膜の形成方法、酸化膜の形成装置及びプログラム | |
JP5044579B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
KR101174953B1 (ko) | 반도체 처리용 성막 장치 및 그 사용 방법과, 컴퓨터로 판독 가능한 매체 | |
JP2007019145A (ja) | シリコン酸窒化膜の形成方法、シリコン酸窒化膜の形成装置及びプログラム | |
JP5113705B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
JP5193527B2 (ja) | シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム | |
KR101577964B1 (ko) | 질화 티탄막의 형성 방법, 질화 티탄막의 형성 장치 및 프로그램을 기록한 기록 매체 | |
JP4918453B2 (ja) | ガス供給装置及び薄膜形成装置 | |
JP5692850B2 (ja) | 薄膜形成方法、薄膜形成装置及びプログラム | |
US20140295675A1 (en) | Silicon oxide film forming method and silicon oxide film forming apparatus | |
JP2010283385A (ja) | シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム | |
JP5710033B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
JP5250141B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
KR20150098195A (ko) | 실리콘 산화막의 형성 방법 및 실리콘 산화막의 형성 장치 | |
KR20150110358A (ko) | 실리콘 산화막 형성 장치의 세정 방법, 실리콘 산화막의 형성 방법, 및 실리콘 산화막 형성 장치 | |
JP7101283B2 (ja) | クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム | |
US20160276147A1 (en) | Silicon Nitride Film Forming Method and Silicon Nitride Film Forming Apparatus | |
JP2018166190A (ja) | 洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置 | |
JP6340332B2 (ja) | 薄膜形成方法、および、薄膜形成装置 | |
JP5465802B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
US20150243492A1 (en) | Apparatus and method of forming silicon nitride film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100824 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110915 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110920 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120221 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120321 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150330 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4959733 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |