JP2018166190A - 洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置 - Google Patents
洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置 Download PDFInfo
- Publication number
- JP2018166190A JP2018166190A JP2017063771A JP2017063771A JP2018166190A JP 2018166190 A JP2018166190 A JP 2018166190A JP 2017063771 A JP2017063771 A JP 2017063771A JP 2017063771 A JP2017063771 A JP 2017063771A JP 2018166190 A JP2018166190 A JP 2018166190A
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- cleaning
- reaction tube
- pressure
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 183
- 238000000034 method Methods 0.000 title claims abstract description 84
- 238000004140 cleaning Methods 0.000 title claims abstract description 70
- 239000006227 byproduct Substances 0.000 title claims abstract description 29
- 230000008021 deposition Effects 0.000 title abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229940070337 ammonium silicofluoride Drugs 0.000 claims abstract description 29
- 238000010926 purge Methods 0.000 claims abstract description 22
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 149
- 230000001590 oxidative effect Effects 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 13
- 239000006200 vaporizer Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 37
- 239000010408 film Substances 0.000 description 49
- 235000012431 wafers Nutrition 0.000 description 48
- 239000004065 semiconductor Substances 0.000 description 37
- 239000001301 oxygen Substances 0.000 description 36
- 229910052760 oxygen Inorganic materials 0.000 description 36
- 229910052757 nitrogen Inorganic materials 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 229910052814 silicon oxide Inorganic materials 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 238000001179 sorption measurement Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 238000010790 dilution Methods 0.000 description 7
- 239000012895 dilution Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
- H01L21/02049—Dry cleaning only with gaseous HF
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
クリーニング後の前記反応室内の圧力を所定圧力まで昇圧する工程と、
該所定圧力で前記珪フッ化アンモニウムが昇華する温度以上の所定温度に加熱した窒素ガスを前記反応室内に供給して前記反応室内を所定時間パージする工程と、
前記反応室内を排気する工程と、を有する。
20 反応管
30 排気部
40 排気口
50 蓋体
60 ウエハボート
70 プラズマ発生部
71 電極
80、90 処理ガス供給管
100 ガス切換え部
110 酸素ガス供給源
120 気化器
130 窒素ガス供給源
200 制御部
Claims (8)
- 加熱手段を有しない室温成膜装置の反応室内のクリーニングの際に副生成物として生成した珪フッ化アンモニウムを除去する洗浄副生成物の除去方法であって、
クリーニング後の前記反応室内の圧力を所定圧力まで昇圧する工程と、
該所定圧力で前記珪フッ化アンモニウムが昇華する温度以上の所定温度に加熱した窒素ガスを前記反応室内に供給して前記反応室内を所定時間パージする工程と、
前記反応室内を排気する工程と、を有する洗浄副生成物の除去方法。 - 前記所定温度は、300℃以上の温度である請求項1に記載の洗浄副生成物の除去方法。
- 前記所定時間は、5〜10分の範囲の所定時間である請求項1又は2に記載の洗浄副生成物の除去方法。
- 前記所定圧力は、大気圧の半分以上の圧力である請求項1乃至3のいずれか一項に記載の洗浄副生成物の除去方法。
- 前記反応室内を排気する工程では、前記反応室内の圧力は1330Pa未満に設定される請求項1乃至4のいずれか一項に記載の洗浄副生成物の除去方法。
- 前記窒素ガスは、前記反応室外に設けられた気化器で加熱されてから前記反応室内に供給される請求項1乃至5のいずれか一項に記載の洗浄副生成物の除去方法。
- 加熱手段を有しない室温成膜装置の反応室内のクリーニング方法であって、
前記反応室内を、フッ化水素を用いてクリーニングするクリーニング工程と、
該クリーニング工程で副生成物として生成した珪フッ化アンモニウムをプラズマにより活性化された酸素ガスを用いて酸化する工程と、
前記反応室内の圧力を所定圧力まで昇圧する工程と、
該所定圧力で前記珪フッ化アンモニウムが昇華する温度以上の所定温度に加熱した窒素ガスを前記反応室内に供給して前記反応室内を所定時間パージする工程と、
前記反応室内を排気する工程と、を有する反応室内のクリーニング方法。 - 加熱手段を有しない室温成膜装置であって、
反応室と、
該反応室内にシリコン含有ガス及びクリーニングガスを切換えて供給する第1のインジェクタと、
前記反応室内に酸化ガス及び窒素ガスを切換えて供給する第2のインジェクタと、
前記酸化ガスを活性化させるプラズマ発生器と、
前記反応室内を排気する排気手段と、
前記反応室外に設けられ、前記窒素ガスを加熱する気化器と、
制御手段と、を有し、
該制御手段は、
前記第1のインジェクタから前記クリーニングガスを前記反応室内に供給させるクリーニング工程と、
前記排気手段を制御し、前記反応室内の圧力を所定圧力まで昇圧する工程と、
前記気化器を制御し、前記クリーニング工程で副生成物として生成した珪フッ化アンモニウムが前記所定圧力下で昇華する温度以上の所定温度に前記窒素ガスを加熱する工程と、
前記第2のインジェクタから前記所定温度に加熱された前記窒素ガスを前記反応室内に供給させ、前記反応室内を所定時間パージする工程と、
前記排気手段を制御し、前記反応室内を排気する工程と、を実行する室温成膜装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017063771A JP6742265B2 (ja) | 2017-03-28 | 2017-03-28 | 洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置 |
KR1020180034888A KR102243842B1 (ko) | 2017-03-28 | 2018-03-27 | 세정 부생성물의 부착 억제 방법 및 이를 이용한 반응실 내의 클리닝 방법, 그리고 실온 성막 장치 |
CN201810264470.7A CN108660434B (zh) | 2017-03-28 | 2018-03-28 | 清洗副产物去除方法、反应室内清洁方法及室温成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017063771A JP6742265B2 (ja) | 2017-03-28 | 2017-03-28 | 洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018166190A true JP2018166190A (ja) | 2018-10-25 |
JP6742265B2 JP6742265B2 (ja) | 2020-08-19 |
Family
ID=63782685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017063771A Active JP6742265B2 (ja) | 2017-03-28 | 2017-03-28 | 洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6742265B2 (ja) |
KR (1) | KR102243842B1 (ja) |
CN (1) | CN108660434B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111128809A (zh) * | 2019-12-31 | 2020-05-08 | 沈阳拓荆科技有限公司 | 多层堆栈薄膜的沉积装置及方法 |
JP2021077693A (ja) * | 2019-11-06 | 2021-05-20 | 東京エレクトロン株式会社 | 処理方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004288903A (ja) * | 2003-03-24 | 2004-10-14 | Hitachi Kokusai Electric Inc | 半導体デバイスの製造方法 |
JP2012256942A (ja) * | 2004-12-21 | 2012-12-27 | Applied Materials Inc | 化学蒸着エッチングチャンバから副生成物の堆積物を除去するインサイチュチャンバ洗浄プロセス |
JP2014068045A (ja) * | 2014-01-22 | 2014-04-17 | Tokyo Electron Ltd | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム |
JP2014127702A (ja) * | 2012-12-27 | 2014-07-07 | Hitachi Kokusai Electric Inc | 基板処理装置、半導体装置の製造方法、気化システム、プログラムおよび記録媒体 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6749687B1 (en) * | 1998-01-09 | 2004-06-15 | Asm America, Inc. | In situ growth of oxide and silicon layers |
JP4663059B2 (ja) * | 2000-03-10 | 2011-03-30 | 東京エレクトロン株式会社 | 処理装置のクリーニング方法 |
US20060130971A1 (en) * | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
US9159808B2 (en) * | 2009-01-26 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective etch-back process for semiconductor devices |
JP5044579B2 (ja) * | 2009-01-27 | 2012-10-10 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム |
JP5700538B2 (ja) * | 2011-03-29 | 2015-04-15 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
US10053774B2 (en) * | 2015-06-12 | 2018-08-21 | Asm Ip Holding B.V. | Reactor system for sublimation of pre-clean byproducts and method thereof |
CN105047551A (zh) * | 2015-08-11 | 2015-11-11 | 上海华力微电子有限公司 | 一种镍化硅合金的制备方法 |
-
2017
- 2017-03-28 JP JP2017063771A patent/JP6742265B2/ja active Active
-
2018
- 2018-03-27 KR KR1020180034888A patent/KR102243842B1/ko active IP Right Grant
- 2018-03-28 CN CN201810264470.7A patent/CN108660434B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004288903A (ja) * | 2003-03-24 | 2004-10-14 | Hitachi Kokusai Electric Inc | 半導体デバイスの製造方法 |
JP2012256942A (ja) * | 2004-12-21 | 2012-12-27 | Applied Materials Inc | 化学蒸着エッチングチャンバから副生成物の堆積物を除去するインサイチュチャンバ洗浄プロセス |
JP2014127702A (ja) * | 2012-12-27 | 2014-07-07 | Hitachi Kokusai Electric Inc | 基板処理装置、半導体装置の製造方法、気化システム、プログラムおよび記録媒体 |
JP2014068045A (ja) * | 2014-01-22 | 2014-04-17 | Tokyo Electron Ltd | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021077693A (ja) * | 2019-11-06 | 2021-05-20 | 東京エレクトロン株式会社 | 処理方法 |
JP7285761B2 (ja) | 2019-11-06 | 2023-06-02 | 東京エレクトロン株式会社 | 処理方法 |
CN111128809A (zh) * | 2019-12-31 | 2020-05-08 | 沈阳拓荆科技有限公司 | 多层堆栈薄膜的沉积装置及方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108660434A (zh) | 2018-10-16 |
CN108660434B (zh) | 2021-08-24 |
KR20180109739A (ko) | 2018-10-08 |
JP6742265B2 (ja) | 2020-08-19 |
KR102243842B1 (ko) | 2021-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5044579B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
JP4959733B2 (ja) | 薄膜形成方法、薄膜形成装置及びプログラム | |
JP5113705B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
JP5250600B2 (ja) | 成膜方法および成膜装置 | |
JP4918452B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
JP2008140864A (ja) | シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム | |
JP4918453B2 (ja) | ガス供給装置及び薄膜形成装置 | |
JP5193527B2 (ja) | シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム | |
JP2020188279A (ja) | クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム | |
JP5554469B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 | |
JP5575299B2 (ja) | 成膜方法および成膜装置 | |
JP2008283148A (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 | |
KR20140118815A (ko) | 실리콘 산화막의 형성 방법 및 실리콘 산화막의 형성 장치 | |
JP6742265B2 (ja) | 洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置 | |
JP5710033B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
JP5250141B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
KR20150110358A (ko) | 실리콘 산화막 형성 장치의 세정 방법, 실리콘 산화막의 형성 방법, 및 실리콘 산화막 형성 장치 | |
JP7101283B2 (ja) | クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム | |
JP5571233B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 | |
JP5465802B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
JP5661444B2 (ja) | 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム | |
JP6340332B2 (ja) | 薄膜形成方法、および、薄膜形成装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190820 |
|
TRDD | Decision of grant or rejection written | ||
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200624 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200630 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200728 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6742265 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |