JP2015109419A5 - - Google Patents

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Publication number
JP2015109419A5
JP2015109419A5 JP2014191264A JP2014191264A JP2015109419A5 JP 2015109419 A5 JP2015109419 A5 JP 2015109419A5 JP 2014191264 A JP2014191264 A JP 2014191264A JP 2014191264 A JP2014191264 A JP 2014191264A JP 2015109419 A5 JP2015109419 A5 JP 2015109419A5
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JP
Japan
Prior art keywords
substrate
amorphous metal
temperature
metal layer
gas
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JP2014191264A
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English (en)
Japanese (ja)
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JP6336866B2 (ja
JP2015109419A (ja
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Priority to JP2014191264A priority Critical patent/JP6336866B2/ja
Priority claimed from JP2014191264A external-priority patent/JP6336866B2/ja
Priority to US14/501,606 priority patent/US9966268B2/en
Publication of JP2015109419A publication Critical patent/JP2015109419A/ja
Publication of JP2015109419A5 publication Critical patent/JP2015109419A5/ja
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JP2014191264A 2013-10-23 2014-09-19 半導体デバイスの製造方法、基板処理装置およびプログラム Active JP6336866B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014191264A JP6336866B2 (ja) 2013-10-23 2014-09-19 半導体デバイスの製造方法、基板処理装置およびプログラム
US14/501,606 US9966268B2 (en) 2013-10-23 2014-09-30 Method of manufacturing semiconductor device and substrate processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013220378 2013-10-23
JP2013220378 2013-10-23
JP2014191264A JP6336866B2 (ja) 2013-10-23 2014-09-19 半導体デバイスの製造方法、基板処理装置およびプログラム

Publications (3)

Publication Number Publication Date
JP2015109419A JP2015109419A (ja) 2015-06-11
JP2015109419A5 true JP2015109419A5 (enExample) 2017-10-19
JP6336866B2 JP6336866B2 (ja) 2018-06-06

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JP2014191264A Active JP6336866B2 (ja) 2013-10-23 2014-09-19 半導体デバイスの製造方法、基板処理装置およびプログラム

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US (1) US9966268B2 (enExample)
JP (1) JP6336866B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150064908A1 (en) * 2013-02-15 2015-03-05 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method for processing substrate and method for manufacturing semiconductor device
US20170309490A1 (en) * 2014-09-24 2017-10-26 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device
WO2016138218A1 (en) * 2015-02-25 2016-09-01 Applied Materials, Inc. Methods and apparatus for using alkyl amines for the selective removal of metal nitride
KR101706747B1 (ko) * 2015-05-08 2017-02-15 주식회사 유진테크 비정질 박막의 형성방법
JP6541438B2 (ja) * 2015-05-28 2019-07-10 東京エレクトロン株式会社 金属膜のストレス低減方法および金属膜の成膜方法
CN107924829B (zh) 2015-09-30 2021-07-23 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
JP6560112B2 (ja) * 2015-12-09 2019-08-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI720106B (zh) * 2016-01-16 2021-03-01 美商應用材料股份有限公司 Pecvd含鎢硬遮罩膜及製造方法
JP6548622B2 (ja) * 2016-09-21 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
JP6876479B2 (ja) * 2017-03-23 2021-05-26 キオクシア株式会社 半導体装置の製造方法
SG11202007666PA (en) 2018-03-26 2020-09-29 Kokusai Electric Corp Method of manufacturing semiconductor device, substrate processing apparatus and program
JP7047117B2 (ja) * 2018-09-14 2022-04-04 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置及び記録媒体
EP3881349A4 (en) * 2018-11-13 2022-08-24 Applied Materials, Inc. SELECTIVE DEPOSITION OF METAL SILICIDES AND SELECTIVE OXIDE REMOVAL
JP7774479B2 (ja) 2022-03-15 2025-11-21 キオクシア株式会社 成膜方法及び成膜装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7405158B2 (en) * 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7141494B2 (en) * 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
US6827978B2 (en) * 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
JP3956049B2 (ja) * 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
US7772114B2 (en) * 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
JP5959991B2 (ja) * 2011-11-25 2016-08-02 東京エレクトロン株式会社 タングステン膜の成膜方法

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