JP2010212601A5 - - Google Patents
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- Publication number
- JP2010212601A5 JP2010212601A5 JP2009059605A JP2009059605A JP2010212601A5 JP 2010212601 A5 JP2010212601 A5 JP 2010212601A5 JP 2009059605 A JP2009059605 A JP 2009059605A JP 2009059605 A JP2009059605 A JP 2009059605A JP 2010212601 A5 JP2010212601 A5 JP 2010212601A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- annealing
- forming
- substrate
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000137 annealing Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 239000011261 inert gas Substances 0.000 claims description 11
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009059605A JP5193913B2 (ja) | 2009-03-12 | 2009-03-12 | ＣＶＤ−Ｒｕ膜の形成方法および半導体装置の製造方法 |
| CN2010800112191A CN102349138A (zh) | 2009-03-12 | 2010-02-25 | CVD-Ru膜的形成方法和半导体装置的制造方法 |
| KR1020117021177A KR101291821B1 (ko) | 2009-03-12 | 2010-02-25 | ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법 |
| PCT/JP2010/052938 WO2010103930A1 (ja) | 2009-03-12 | 2010-02-25 | ＣＶＤ－Ｒｕ膜の形成方法および半導体装置の製造方法 |
| TW99107153A TWI467044B (zh) | 2009-03-12 | 2010-03-11 | CVD-Ru film formation method and manufacturing method of semiconductor device |
| US13/230,351 US20120064717A1 (en) | 2009-03-12 | 2011-09-12 | Method for forming cvd-ru film and method for manufacturing semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009059605A JP5193913B2 (ja) | 2009-03-12 | 2009-03-12 | ＣＶＤ−Ｒｕ膜の形成方法および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010212601A JP2010212601A (ja) | 2010-09-24 |
| JP2010212601A5 true JP2010212601A5 (enExample) | 2012-03-29 |
| JP5193913B2 JP5193913B2 (ja) | 2013-05-08 |
Family
ID=42728220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009059605A Expired - Fee Related JP5193913B2 (ja) | 2009-03-12 | 2009-03-12 | ＣＶＤ−Ｒｕ膜の形成方法および半導体装置の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120064717A1 (enExample) |
| JP (1) | JP5193913B2 (enExample) |
| KR (1) | KR101291821B1 (enExample) |
| CN (1) | CN102349138A (enExample) |
| TW (1) | TWI467044B (enExample) |
| WO (1) | WO2010103930A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140021628A (ko) * | 2011-03-30 | 2014-02-20 | 도쿄엘렉트론가부시키가이샤 | Cu 배선의 형성 방법 |
| US20130146468A1 (en) * | 2011-12-08 | 2013-06-13 | Applied Materials, Inc. | Chemical vapor deposition (cvd) of ruthenium films and applications for same |
| US8517769B1 (en) | 2012-03-16 | 2013-08-27 | Globalfoundries Inc. | Methods of forming copper-based conductive structures on an integrated circuit device |
| US8673766B2 (en) * | 2012-05-21 | 2014-03-18 | Globalfoundries Inc. | Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition |
| JP2014017345A (ja) * | 2012-07-09 | 2014-01-30 | Tokyo Electron Ltd | Ｃｕ配線の形成方法 |
| JP2015160963A (ja) | 2014-02-26 | 2015-09-07 | 東京エレクトロン株式会社 | ルテニウム膜の成膜方法および成膜装置、ならびに半導体装置の製造方法 |
| WO2016073658A1 (en) | 2014-11-05 | 2016-05-12 | Corning Incorporated | Bottom-up electrolytic via plating method |
| JP6467239B2 (ja) * | 2015-02-16 | 2019-02-06 | 東京エレクトロン株式会社 | ルテニウム膜の成膜方法、成膜装置及び半導体装置の製造方法 |
| KR102324826B1 (ko) | 2015-04-02 | 2021-11-11 | 삼성전자주식회사 | 배선 구조물, 배선 구조물 형성 방법 및 반도체 장치의 제조 방법 |
| JP6419644B2 (ja) | 2015-05-21 | 2018-11-07 | 東京エレクトロン株式会社 | 金属ナノドットの形成方法、金属ナノドット形成装置及び半導体装置の製造方法 |
| US9805976B2 (en) * | 2016-01-08 | 2017-10-31 | Applied Materials, Inc. | Co or Ni and Cu integration for small and large features in integrated circuits |
| WO2017143180A1 (en) * | 2016-02-19 | 2017-08-24 | Tokyo Electron Limited | Ruthenium metal deposition method for electrical connections |
| US20170241019A1 (en) * | 2016-02-22 | 2017-08-24 | Ultratech, Inc. | Pe-ald methods with reduced quartz-based contamination |
| JP6470876B2 (ja) * | 2016-05-16 | 2019-02-13 | 株式会社アルバック | Ｃｕ膜の形成方法 |
| JP6807251B2 (ja) | 2017-03-02 | 2021-01-06 | 東京エレクトロン株式会社 | ルテニウム配線の製造方法 |
| KR102601862B1 (ko) | 2017-10-04 | 2023-11-13 | 도쿄엘렉트론가부시키가이샤 | 상호접속부를 위한 루테늄 금속 피처 충전 |
| US10917966B2 (en) | 2018-01-29 | 2021-02-09 | Corning Incorporated | Articles including metallized vias |
| JP2020147772A (ja) * | 2019-03-11 | 2020-09-17 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| US20220139776A1 (en) * | 2020-11-03 | 2022-05-05 | Tokyo Electron Limited | Method for filling recessed features in semiconductor devices with a low-resistivity metal |
| JP2022152438A (ja) * | 2021-03-29 | 2022-10-12 | 東京エレクトロン株式会社 | ルテニウム膜の成膜方法及び処理装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100389913B1 (ko) * | 1999-12-23 | 2003-07-04 | 삼성전자주식회사 | 공정조건을 변화시키면서 화학기상 증착법으로 루테늄막을형성하는 방법 및 그에 의해 형성된 루테늄막 |
| JP4342131B2 (ja) * | 2001-10-30 | 2009-10-14 | 富士通マイクロエレクトロニクス株式会社 | 容量素子の製造方法及び半導体装置の製造方法 |
| JP2005029821A (ja) * | 2003-07-09 | 2005-02-03 | Tokyo Electron Ltd | 成膜方法 |
| US20050069641A1 (en) * | 2003-09-30 | 2005-03-31 | Tokyo Electron Limited | Method for depositing metal layers using sequential flow deposition |
| JP4889227B2 (ja) * | 2005-03-23 | 2012-03-07 | 東京エレクトロン株式会社 | 基板処理方法および成膜方法 |
| US20070069383A1 (en) * | 2005-09-28 | 2007-03-29 | Tokyo Electron Limited | Semiconductor device containing a ruthenium diffusion barrier and method of forming |
| JP2008041700A (ja) * | 2006-08-01 | 2008-02-21 | Tokyo Electron Ltd | 成膜方法、成膜装置及び記憶媒体 |
| US7476615B2 (en) * | 2006-11-01 | 2009-01-13 | Intel Corporation | Deposition process for iodine-doped ruthenium barrier layers |
| JP5234718B2 (ja) * | 2007-03-26 | 2013-07-10 | 株式会社アルバック | 半導体装置の製造方法 |
-
2009
- 2009-03-12 JP JP2009059605A patent/JP5193913B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-25 CN CN2010800112191A patent/CN102349138A/zh active Pending
- 2010-02-25 KR KR1020117021177A patent/KR101291821B1/ko active Active
- 2010-02-25 WO PCT/JP2010/052938 patent/WO2010103930A1/ja not_active Ceased
- 2010-03-11 TW TW99107153A patent/TWI467044B/zh active
-
2011
- 2011-09-12 US US13/230,351 patent/US20120064717A1/en not_active Abandoned
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