JP2019510366A5 - - Google Patents

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Publication number
JP2019510366A5
JP2019510366A5 JP2018539823A JP2018539823A JP2019510366A5 JP 2019510366 A5 JP2019510366 A5 JP 2019510366A5 JP 2018539823 A JP2018539823 A JP 2018539823A JP 2018539823 A JP2018539823 A JP 2018539823A JP 2019510366 A5 JP2019510366 A5 JP 2019510366A5
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JP
Japan
Prior art keywords
surface energy
substrate
opening
defining
depositing
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JP2018539823A
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English (en)
Japanese (ja)
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JP6928764B2 (ja
JP2019510366A (ja
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Priority claimed from PCT/US2017/015097 external-priority patent/WO2017132351A1/en
Publication of JP2019510366A publication Critical patent/JP2019510366A/ja
Publication of JP2019510366A5 publication Critical patent/JP2019510366A5/ja
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JP2018539823A 2016-01-28 2017-01-26 金属酸化物のスピンオン堆積の方法 Active JP6928764B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662288253P 2016-01-28 2016-01-28
US62/288,253 2016-01-28
PCT/US2017/015097 WO2017132351A1 (en) 2016-01-28 2017-01-26 Methods of spin-on deposition of metal oxides

Publications (3)

Publication Number Publication Date
JP2019510366A JP2019510366A (ja) 2019-04-11
JP2019510366A5 true JP2019510366A5 (enExample) 2020-04-16
JP6928764B2 JP6928764B2 (ja) 2021-09-01

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JP2018539823A Active JP6928764B2 (ja) 2016-01-28 2017-01-26 金属酸化物のスピンオン堆積の方法

Country Status (6)

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US (1) US10141183B2 (enExample)
JP (1) JP6928764B2 (enExample)
KR (1) KR102405203B1 (enExample)
CN (1) CN108701587B (enExample)
TW (1) TWI643251B (enExample)
WO (1) WO2017132351A1 (enExample)

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US11276572B2 (en) * 2017-12-08 2022-03-15 Tokyo Electron Limited Technique for multi-patterning substrates
US10354922B1 (en) 2017-12-27 2019-07-16 International Business Machines Corporation Simplified block patterning with wet strippable hardmask for high-energy implantation
US10707232B2 (en) 2018-05-14 2020-07-07 Samsung Electronics Co., Ltd. Method for fabricating semiconductor device using a porosity in a sacrificial pattern, and fabricating equipment for semiconductor device using the same
US10573520B2 (en) 2018-06-12 2020-02-25 International Business Machines Corporation Multiple patterning scheme integration with planarized cut patterning
CN111415860A (zh) * 2019-01-07 2020-07-14 东京毅力科创株式会社 用于对基底进行多重图案化的方法
US12487523B2 (en) 2020-09-30 2025-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ deposition and densification treatment for metal-comprising resist layer
TW202313209A (zh) * 2021-05-28 2023-04-01 日商三菱綜合材料股份有限公司 金屬化合物膜之製造方法
JP7743733B2 (ja) * 2021-08-31 2025-09-25 富士電機株式会社 半導体装置の製造方法

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JP2000251663A (ja) * 1999-02-25 2000-09-14 Canon Inc 電子放出素子、電子源、画像形成装置及びそれらの製造方法
US6730597B1 (en) 2000-08-03 2004-05-04 Texas Instruments Incorporated Pre-ECD wet surface modification to improve wettability and reduced void defect
GB0207134D0 (en) * 2002-03-27 2002-05-08 Cambridge Display Tech Ltd Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained
US6972261B2 (en) * 2002-06-27 2005-12-06 Xerox Corporation Method for fabricating fine features by jet-printing and surface treatment
GB0215858D0 (en) * 2002-07-09 2002-08-14 Cambridge Display Tech Ltd Patterning method
JP4538259B2 (ja) * 2003-04-23 2010-09-08 東京エレクトロン株式会社 層間絶縁膜の表面改質方法及び表面改質装置
US7686978B2 (en) * 2003-09-24 2010-03-30 E. I. Du Pont De Nemours And Company Method for the application of active materials onto active surfaces and devices made with such methods
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JP5194645B2 (ja) * 2007-08-29 2013-05-08 ソニー株式会社 半導体装置の製造方法
KR20160040319A (ko) * 2007-10-01 2016-04-12 씬 필름 일렉트로닉스 에이에스에이 전기 활성 디바이스 및 그 제조 방법
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