TWI643251B - 金屬氧化物之旋塗式沉積方法 - Google Patents
金屬氧化物之旋塗式沉積方法 Download PDFInfo
- Publication number
- TWI643251B TWI643251B TW106103428A TW106103428A TWI643251B TW I643251 B TWI643251 B TW I643251B TW 106103428 A TW106103428 A TW 106103428A TW 106103428 A TW106103428 A TW 106103428A TW I643251 B TWI643251 B TW I643251B
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- Prior art keywords
- surface energy
- depositing
- substrate
- item
- filling material
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 70
- 230000008021 deposition Effects 0.000 title claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 12
- 150000004706 metal oxides Chemical group 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims abstract description 88
- 238000000151 deposition Methods 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 58
- 230000004048 modification Effects 0.000 claims description 27
- 238000012986 modification Methods 0.000 claims description 27
- 238000011282 treatment Methods 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000003607 modifier Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 claims 1
- -1 HFOx Inorganic materials 0.000 abstract description 3
- 229910006854 SnOx Inorganic materials 0.000 abstract description 3
- 229910003070 TaOx Inorganic materials 0.000 abstract description 3
- 229910003134 ZrOx Inorganic materials 0.000 abstract description 3
- 239000007769 metal material Substances 0.000 abstract description 3
- 239000011800 void material Substances 0.000 abstract description 2
- 229910003087 TiOx Inorganic materials 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000059 patterning Methods 0.000 description 14
- 238000001459 lithography Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002408 directed self-assembly Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662288253P | 2016-01-28 | 2016-01-28 | |
| US62/288,253 | 2016-01-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201738939A TW201738939A (zh) | 2017-11-01 |
| TWI643251B true TWI643251B (zh) | 2018-12-01 |
Family
ID=59387626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106103428A TWI643251B (zh) | 2016-01-28 | 2017-02-02 | 金屬氧化物之旋塗式沉積方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10141183B2 (enExample) |
| JP (1) | JP6928764B2 (enExample) |
| KR (1) | KR102405203B1 (enExample) |
| CN (1) | CN108701587B (enExample) |
| TW (1) | TWI643251B (enExample) |
| WO (1) | WO2017132351A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9991156B2 (en) * | 2016-06-03 | 2018-06-05 | International Business Machines Corporation | Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs |
| US11276572B2 (en) * | 2017-12-08 | 2022-03-15 | Tokyo Electron Limited | Technique for multi-patterning substrates |
| US10354922B1 (en) | 2017-12-27 | 2019-07-16 | International Business Machines Corporation | Simplified block patterning with wet strippable hardmask for high-energy implantation |
| US10707232B2 (en) | 2018-05-14 | 2020-07-07 | Samsung Electronics Co., Ltd. | Method for fabricating semiconductor device using a porosity in a sacrificial pattern, and fabricating equipment for semiconductor device using the same |
| US10573520B2 (en) | 2018-06-12 | 2020-02-25 | International Business Machines Corporation | Multiple patterning scheme integration with planarized cut patterning |
| CN111415860A (zh) * | 2019-01-07 | 2020-07-14 | 东京毅力科创株式会社 | 用于对基底进行多重图案化的方法 |
| US12487523B2 (en) | 2020-09-30 | 2025-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ deposition and densification treatment for metal-comprising resist layer |
| TW202313209A (zh) * | 2021-05-28 | 2023-04-01 | 日商三菱綜合材料股份有限公司 | 金屬化合物膜之製造方法 |
| JP7743733B2 (ja) * | 2021-08-31 | 2025-09-25 | 富士電機株式会社 | 半導体装置の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030176064A1 (en) * | 2000-08-03 | 2003-09-18 | Jiong-Ping Lu | Pre-ECD wet surface modification to improve wettability and reduce void defect |
| TW200525793A (en) * | 2003-09-24 | 2005-08-01 | Du Pont | Method for the application of active materials onto active surfaces and devices made with such methods |
| US20050196969A1 (en) * | 2002-03-27 | 2005-09-08 | Gunner Alec G. | Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained |
| US20050239295A1 (en) * | 2004-04-27 | 2005-10-27 | Wang Pei-L | Chemical treatment of material surfaces |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69939514D1 (de) * | 1998-03-17 | 2008-10-23 | Seiko Epson Corp | Verfahren zur herstellung einer strukturierten dünnschichtvorrichtung |
| JP2000251663A (ja) * | 1999-02-25 | 2000-09-14 | Canon Inc | 電子放出素子、電子源、画像形成装置及びそれらの製造方法 |
| US6972261B2 (en) * | 2002-06-27 | 2005-12-06 | Xerox Corporation | Method for fabricating fine features by jet-printing and surface treatment |
| GB0215858D0 (en) * | 2002-07-09 | 2002-08-14 | Cambridge Display Tech Ltd | Patterning method |
| JP4538259B2 (ja) * | 2003-04-23 | 2010-09-08 | 東京エレクトロン株式会社 | 層間絶縁膜の表面改質方法及び表面改質装置 |
| KR20050064265A (ko) | 2003-12-23 | 2005-06-29 | 주식회사 하이닉스반도체 | 반도체 소자의 절연막 패터닝 방법 |
| WO2006071938A1 (en) | 2004-12-29 | 2006-07-06 | E. I. Dupont De Nemours And Company | Coated substrate and method of making same |
| US20090071837A1 (en) * | 2005-11-18 | 2009-03-19 | Mikael Fredenberg | Master electrode and method of forming it |
| KR101194839B1 (ko) * | 2006-02-28 | 2012-10-25 | 삼성전자주식회사 | 나노결정을 포함하는 메모리 소자 및 그 제조 방법 |
| US20070254402A1 (en) * | 2006-04-27 | 2007-11-01 | Robert Rotzoll | Structure and fabrication of self-aligned high-performance organic fets |
| EP1976019B1 (en) * | 2007-03-29 | 2011-06-15 | Korea Advanced Institute of Science and Technology | Thin film transistor including titanium oxides as active layer and method of manufacturing the same |
| JP5194645B2 (ja) * | 2007-08-29 | 2013-05-08 | ソニー株式会社 | 半導体装置の製造方法 |
| KR20160040319A (ko) * | 2007-10-01 | 2016-04-12 | 씬 필름 일렉트로닉스 에이에스에이 | 전기 활성 디바이스 및 그 제조 방법 |
| US8114301B2 (en) * | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
| US8551566B2 (en) * | 2009-02-19 | 2013-10-08 | Massachusetts Institute Of Technology | Directed material assembly |
| JP5254381B2 (ja) * | 2011-02-23 | 2013-08-07 | 株式会社東芝 | パターン形成方法 |
| WO2013158527A1 (en) * | 2012-04-16 | 2013-10-24 | Brewer Science Inc. | Silicon hardmask layer for directed self-assembly |
| US9136123B2 (en) * | 2013-01-19 | 2015-09-15 | Rohm And Haas Electronic Materials Llc | Hardmask surface treatment |
| US9502231B2 (en) * | 2013-03-12 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer and method |
| GB2514401B (en) * | 2013-05-23 | 2017-08-23 | Cambridge Display Tech Ltd | Inkjet Devices |
| US9761449B2 (en) * | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
-
2017
- 2017-01-26 US US15/416,645 patent/US10141183B2/en active Active
- 2017-01-26 CN CN201780013847.5A patent/CN108701587B/zh active Active
- 2017-01-26 KR KR1020187024190A patent/KR102405203B1/ko active Active
- 2017-01-26 WO PCT/US2017/015097 patent/WO2017132351A1/en not_active Ceased
- 2017-01-26 JP JP2018539823A patent/JP6928764B2/ja active Active
- 2017-02-02 TW TW106103428A patent/TWI643251B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030176064A1 (en) * | 2000-08-03 | 2003-09-18 | Jiong-Ping Lu | Pre-ECD wet surface modification to improve wettability and reduce void defect |
| US20050196969A1 (en) * | 2002-03-27 | 2005-09-08 | Gunner Alec G. | Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained |
| TW200525793A (en) * | 2003-09-24 | 2005-08-01 | Du Pont | Method for the application of active materials onto active surfaces and devices made with such methods |
| US20050239295A1 (en) * | 2004-04-27 | 2005-10-27 | Wang Pei-L | Chemical treatment of material surfaces |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170221704A1 (en) | 2017-08-03 |
| KR20180100070A (ko) | 2018-09-06 |
| CN108701587A (zh) | 2018-10-23 |
| TW201738939A (zh) | 2017-11-01 |
| WO2017132351A1 (en) | 2017-08-03 |
| CN108701587B (zh) | 2023-04-21 |
| US10141183B2 (en) | 2018-11-27 |
| KR102405203B1 (ko) | 2022-06-02 |
| JP6928764B2 (ja) | 2021-09-01 |
| JP2019510366A (ja) | 2019-04-11 |
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