JP2007531304A5 - - Google Patents

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Publication number
JP2007531304A5
JP2007531304A5 JP2007506147A JP2007506147A JP2007531304A5 JP 2007531304 A5 JP2007531304 A5 JP 2007531304A5 JP 2007506147 A JP2007506147 A JP 2007506147A JP 2007506147 A JP2007506147 A JP 2007506147A JP 2007531304 A5 JP2007531304 A5 JP 2007531304A5
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JP
Japan
Prior art keywords
film
temperature
chamber
deposit
processing chamber
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Application number
JP2007506147A
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English (en)
Japanese (ja)
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JP2007531304A (ja
JP5219505B2 (ja
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Priority claimed from US10/814,713 external-priority patent/US7604841B2/en
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Publication of JP2007531304A publication Critical patent/JP2007531304A/ja
Publication of JP2007531304A5 publication Critical patent/JP2007531304A5/ja
Application granted granted Critical
Publication of JP5219505B2 publication Critical patent/JP5219505B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007506147A 2004-03-31 2005-01-26 チャンバー洗浄工程間の時間を延長する方法 Expired - Fee Related JP5219505B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/814,713 2004-03-31
US10/814,713 US7604841B2 (en) 2004-03-31 2004-03-31 Method for extending time between chamber cleaning processes
PCT/US2005/002509 WO2005104207A1 (en) 2004-03-31 2005-01-26 Method for extending time between chamber cleaning processes

Publications (3)

Publication Number Publication Date
JP2007531304A JP2007531304A (ja) 2007-11-01
JP2007531304A5 true JP2007531304A5 (enExample) 2008-03-13
JP5219505B2 JP5219505B2 (ja) 2013-06-26

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ID=34960384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007506147A Expired - Fee Related JP5219505B2 (ja) 2004-03-31 2005-01-26 チャンバー洗浄工程間の時間を延長する方法

Country Status (4)

Country Link
US (1) US7604841B2 (enExample)
JP (1) JP5219505B2 (enExample)
TW (1) TW200536947A (enExample)
WO (1) WO2005104207A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4426518B2 (ja) * 2005-10-11 2010-03-03 東京エレクトロン株式会社 処理装置
JP4866658B2 (ja) * 2006-05-23 2012-02-01 東京エレクトロン株式会社 半導体製造装置
JP4245012B2 (ja) * 2006-07-13 2009-03-25 東京エレクトロン株式会社 処理装置及びこのクリーニング方法
JP5008957B2 (ja) 2006-11-30 2012-08-22 東京エレクトロン株式会社 シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム
KR100809852B1 (ko) * 2007-05-17 2008-03-04 (주)엘오티베큠 일체형 진공발생장치
CN102270579A (zh) * 2010-06-04 2011-12-07 中芯国际集成电路制造(上海)有限公司 一种遮挡晶片制备方法
US8590705B2 (en) * 2010-06-11 2013-11-26 Air Products And Chemicals, Inc. Cylinder surface treated container for monochlorosilane
JP2014209558A (ja) * 2013-03-27 2014-11-06 東京エレクトロン株式会社 シリコン酸化膜の形成方法、及び、シリコン酸化膜の形成装置
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10121655B2 (en) 2015-11-20 2018-11-06 Applied Materials, Inc. Lateral plasma/radical source
CN107099782A (zh) * 2016-02-23 2017-08-29 常州国成新材料科技有限公司 一种制备石墨烯、六角氮化硼等薄膜材料的化学气相沉积装置
JP6648627B2 (ja) 2016-04-27 2020-02-14 三菱電機株式会社 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
CN108165953B (zh) * 2017-12-25 2020-06-30 上海华力微电子有限公司 改善hto厚度稳定性的方法
US12060636B2 (en) * 2018-09-21 2024-08-13 Lam Research Corporation Method for conditioning a plasma processing chamber
SG11202103979UA (en) * 2018-10-19 2021-05-28 Lam Res Corp In situ protective coating of chamber components for semiconductor processing
JP7076499B2 (ja) * 2020-06-22 2022-05-27 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
CN113889403A (zh) * 2021-12-08 2022-01-04 陕西亚成微电子股份有限公司 一种栅氧化层生长方法
CN116043190A (zh) * 2022-11-02 2023-05-02 长鑫存储技术有限公司 二氧化硅薄膜及其预沉积方法、半导体结构

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JP2605465B2 (ja) * 1990-08-31 1997-04-30 日本電気株式会社 容量絶縁膜の形成方法
EP0608633B1 (en) * 1993-01-28 1999-03-03 Applied Materials, Inc. Method for multilayer CVD processing in a single chamber
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
US5824375A (en) * 1996-10-24 1998-10-20 Applied Materials, Inc. Decontamination of a plasma reactor using a plasma after a chamber clean
US6950193B1 (en) * 1997-10-28 2005-09-27 Rockwell Automation Technologies, Inc. System for monitoring substrate conditions
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JP3959203B2 (ja) * 1999-05-21 2007-08-15 新日本無線株式会社 半導体装置の製造方法
TW440952B (en) * 1999-07-12 2001-06-16 Lam Res Co Ltd Waferless clean process of dry etcher
US6426015B1 (en) * 1999-12-14 2002-07-30 Applied Materials, Inc. Method of reducing undesired etching of insulation due to elevated boron concentrations
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US6413321B1 (en) 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
US6805952B2 (en) 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
JP4700236B2 (ja) 2001-08-03 2011-06-15 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
JP4897159B2 (ja) 2001-08-03 2012-03-14 株式会社日立国際電気 半導体装置の製造方法
JP2003100743A (ja) 2001-09-26 2003-04-04 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
JP2003188159A (ja) * 2001-12-19 2003-07-04 Seiko Epson Corp Ｃｖｄ装置及び半導体装置の製造方法
JP2004153066A (ja) * 2002-10-31 2004-05-27 Fujitsu Ltd 半導体装置の製造方法
US7371427B2 (en) * 2003-05-20 2008-05-13 Applied Materials, Inc. Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
US20060093756A1 (en) * 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films

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