KR101291821B1 - ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법 - Google Patents

ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR101291821B1
KR101291821B1 KR1020117021177A KR20117021177A KR101291821B1 KR 101291821 B1 KR101291821 B1 KR 101291821B1 KR 1020117021177 A KR1020117021177 A KR 1020117021177A KR 20117021177 A KR20117021177 A KR 20117021177A KR 101291821 B1 KR101291821 B1 KR 101291821B1
Authority
KR
South Korea
Prior art keywords
film
annealing
forming
cvd
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117021177A
Other languages
English (en)
Korean (ko)
Other versions
KR20110124304A (ko
Inventor
다카라 가토
야스시 미즈사와
다츠오 하타노
아츠시 고미
치아키 야스무로
오사무 요코야마
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20110124304A publication Critical patent/KR20110124304A/ko
Application granted granted Critical
Publication of KR101291821B1 publication Critical patent/KR101291821B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020117021177A 2009-03-12 2010-02-25 ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법 Active KR101291821B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009059605A JP5193913B2 (ja) 2009-03-12 2009-03-12 ＣＶＤ−Ｒｕ膜の形成方法および半導体装置の製造方法
JPJP-P-2009-059605 2009-03-12
PCT/JP2010/052938 WO2010103930A1 (ja) 2009-03-12 2010-02-25 ＣＶＤ－Ｒｕ膜の形成方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20110124304A KR20110124304A (ko) 2011-11-16
KR101291821B1 true KR101291821B1 (ko) 2013-07-31

Family

ID=42728220

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117021177A Active KR101291821B1 (ko) 2009-03-12 2010-02-25 ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (1) US20120064717A1 (enExample)
JP (1) JP5193913B2 (enExample)
KR (1) KR101291821B1 (enExample)
CN (1) CN102349138A (enExample)
TW (1) TWI467044B (enExample)
WO (1) WO2010103930A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012133400A1 (ja) * 2011-03-30 2012-10-04 東京エレクトロン株式会社 Ｃｕ配線の形成方法
US20130146468A1 (en) * 2011-12-08 2013-06-13 Applied Materials, Inc. Chemical vapor deposition (cvd) of ruthenium films and applications for same
US8517769B1 (en) 2012-03-16 2013-08-27 Globalfoundries Inc. Methods of forming copper-based conductive structures on an integrated circuit device
US8673766B2 (en) * 2012-05-21 2014-03-18 Globalfoundries Inc. Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition
JP2014017345A (ja) * 2012-07-09 2014-01-30 Tokyo Electron Ltd Ｃｕ配線の形成方法
JP2015160963A (ja) 2014-02-26 2015-09-07 東京エレクトロン株式会社 ルテニウム膜の成膜方法および成膜装置、ならびに半導体装置の製造方法
TWI689630B (zh) 2014-11-05 2020-04-01 美商康寧公司 底部向上電解質通孔鍍覆方法
JP6467239B2 (ja) * 2015-02-16 2019-02-06 東京エレクトロン株式会社 ルテニウム膜の成膜方法、成膜装置及び半導体装置の製造方法
KR102324826B1 (ko) 2015-04-02 2021-11-11 삼성전자주식회사 배선 구조물, 배선 구조물 형성 방법 및 반도체 장치의 제조 방법
JP6419644B2 (ja) 2015-05-21 2018-11-07 東京エレクトロン株式会社 金属ナノドットの形成方法、金属ナノドット形成装置及び半導体装置の製造方法
US9805976B2 (en) 2016-01-08 2017-10-31 Applied Materials, Inc. Co or Ni and Cu integration for small and large features in integrated circuits
WO2017143180A1 (en) * 2016-02-19 2017-08-24 Tokyo Electron Limited Ruthenium metal deposition method for electrical connections
US20170241019A1 (en) * 2016-02-22 2017-08-24 Ultratech, Inc. Pe-ald methods with reduced quartz-based contamination
KR102059324B1 (ko) * 2016-05-16 2019-12-26 가부시키가이샤 아루박 Cu막의 형성 방법
JP6785130B2 (ja) * 2016-07-06 2020-11-18 東京エレクトロン株式会社 ルテニウム配線およびその製造方法
JP6807251B2 (ja) 2017-03-02 2021-01-06 東京エレクトロン株式会社 ルテニウム配線の製造方法
WO2019070545A1 (en) * 2017-10-04 2019-04-11 Tokyo Electron Limited METAL RUTHENIUM FILLING OF ELEMENTS FOR INTERCONNECTIONS
US10917966B2 (en) 2018-01-29 2021-02-09 Corning Incorporated Articles including metallized vias
JP2020147772A (ja) * 2019-03-11 2020-09-17 東京エレクトロン株式会社 成膜装置及び成膜方法
US20220139776A1 (en) * 2020-11-03 2022-05-05 Tokyo Electron Limited Method for filling recessed features in semiconductor devices with a low-resistivity metal
JP2022152438A (ja) * 2021-03-29 2022-10-12 東京エレクトロン株式会社 ルテニウム膜の成膜方法及び処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070069383A1 (en) * 2005-09-28 2007-03-29 Tokyo Electron Limited Semiconductor device containing a ruthenium diffusion barrier and method of forming
JP2008244017A (ja) * 2007-03-26 2008-10-09 Ulvac Japan Ltd 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100389913B1 (ko) * 1999-12-23 2003-07-04 삼성전자주식회사 공정조건을 변화시키면서 화학기상 증착법으로 루테늄막을형성하는 방법 및 그에 의해 형성된 루테늄막
JP4342131B2 (ja) * 2001-10-30 2009-10-14 富士通マイクロエレクトロニクス株式会社 容量素子の製造方法及び半導体装置の製造方法
JP2005029821A (ja) * 2003-07-09 2005-02-03 Tokyo Electron Ltd 成膜方法
US20050069641A1 (en) * 2003-09-30 2005-03-31 Tokyo Electron Limited Method for depositing metal layers using sequential flow deposition
JP4889227B2 (ja) * 2005-03-23 2012-03-07 東京エレクトロン株式会社 基板処理方法および成膜方法
JP2008041700A (ja) * 2006-08-01 2008-02-21 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体
US7476615B2 (en) * 2006-11-01 2009-01-13 Intel Corporation Deposition process for iodine-doped ruthenium barrier layers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070069383A1 (en) * 2005-09-28 2007-03-29 Tokyo Electron Limited Semiconductor device containing a ruthenium diffusion barrier and method of forming
JP2008244017A (ja) * 2007-03-26 2008-10-09 Ulvac Japan Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2010212601A (ja) 2010-09-24
WO2010103930A1 (ja) 2010-09-16
KR20110124304A (ko) 2011-11-16
JP5193913B2 (ja) 2013-05-08
TWI467044B (zh) 2015-01-01
US20120064717A1 (en) 2012-03-15
CN102349138A (zh) 2012-02-08
TW201043721A (en) 2010-12-16

Similar Documents

Publication Publication Date Title
KR101291821B1 (ko) ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법
US8247321B2 (en) Method of manufacturing semiconductor device, semiconductor device, electronic instrument, semiconductor manufacturing apparatus, and storage medium
JP5683038B2 (ja) 成膜方法
US8440563B2 (en) Film forming method and processing system
US7791202B2 (en) Semiconductor device having oxidized metal film and manufacture method of the same
TWI464790B (zh) Film forming method and substrate processing device
US10629433B2 (en) Method of manufacturing ruthenium wiring
US9779950B2 (en) Ruthenium film forming method, film forming apparatus, and semiconductor device manufacturing method
KR20140143095A (ko) 산화 망간막의 형성 방법
KR20140021628A (ko) Cu 배선의 형성 방법
US20080184543A1 (en) Method and apparatus for manufacturing semiconductor device, and storage medium for executing the method
JP2016037656A (ja) タングステン膜の成膜方法
JP2018041898A (ja) 成膜方法および成膜システム
KR101730229B1 (ko) 루테늄막의 성막 방법 및 성막 장치와 반도체 장치의 제조 방법
JP2010192467A (ja) 被処理体の成膜方法及び処理システム
JP2006229207A (ja) 半導体装置の製造方法及び半導体装置
WO2016120957A1 (ja) 半導体装置の製造方法、基板処理装置および記録媒体
WO2006046386A1 (ja) 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体
US20250293086A1 (en) Methods and apparatus for selective etch stop capping and selective via open for fully landed via on underlying metal

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20110909

Patent event code: PA01051R01D

Comment text: International Patent Application

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20110914

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20121019

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20130430

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20130725

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20130725

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20160630

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20160630

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20170704

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20170704

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20180717

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20180717

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20210715

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20220701

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20230628

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20240702

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20250630

Start annual number: 13

End annual number: 13