WO2016120957A1 - 半導体装置の製造方法、基板処理装置および記録媒体 - Google Patents
半導体装置の製造方法、基板処理装置および記録媒体 Download PDFInfo
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- WO2016120957A1 WO2016120957A1 PCT/JP2015/051965 JP2015051965W WO2016120957A1 WO 2016120957 A1 WO2016120957 A1 WO 2016120957A1 JP 2015051965 W JP2015051965 W JP 2015051965W WO 2016120957 A1 WO2016120957 A1 WO 2016120957A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
Definitions
- the present invention relates to a semiconductor device manufacturing method, a substrate processing apparatus, and a recording medium.
- a process of forming a metal film on a substrate may be performed.
- the metal film may be selectively formed in a predetermined region on the substrate.
- An object of the present invention is to provide a novel technique that can be applied to the selective formation of a metal film on a predetermined region on a substrate.
- Supplying a reducing gas to a substrate having an insulating surface and a conductive surface Supplying a metal-containing gas to the substrate;
- a method for manufacturing a semiconductor device is provided in which a metal film is selectively formed on the insulating surface by performing a predetermined number of cycles in which time division is performed.
- a metal film can be selectively formed on an insulating surface of a substrate having an insulating surface and a conductive surface.
- FIG. 1 is a schematic configuration diagram of a processing furnace of a substrate processing apparatus suitably used in an embodiment of the present invention, and is a diagram showing a processing furnace part in a longitudinal sectional view.
- FIG. 2 is a schematic cross-sectional view taken along line AA in FIG.
- FIG. 3 is a block diagram showing a configuration of a controller included in the substrate processing apparatus shown in FIG.
- FIG. 4A is a timing chart showing the sequence of the W film forming step in one embodiment of the present invention
- FIG. 4B is a schematic plan view showing the wafer in the initial state.
- FIG. 5A and FIG. 5B are a schematic cross-sectional view and a plan view of a wafer in the example, respectively.
- FIG. 6 is SEM photographs of various L / S pattern samples prepared in the examples.
- FIG. 7 is a TEM photograph of one sample produced in the example.
- FIG. 8 is SEM photographs of samples prepared at various film formation temperatures in the examples.
- FIG. 9A is a graph showing the incubation time that occurs when a sample is produced under a plurality of temperature conditions in the embodiment.
- FIG. 9B is a graph that occurs when a sample is produced under a plurality of pressure conditions in the embodiment.
- FIG. 9C is a graph showing the incubation time that occurs when a sample is prepared with a plurality of supply times in the example.
- FIG. 9A is a graph showing the incubation time that occurs when a sample is produced under a plurality of temperature conditions in the embodiment.
- FIG. 9B is a graph that occurs when a sample is produced under a plurality of pressure conditions in the embodiment.
- FIG. 9C is a graph showing the incubation time that occurs when a sample is prepared with
- FIG. 10A is a schematic configuration diagram of a processing furnace of a substrate processing apparatus suitably used in another embodiment of the present invention, and is a view showing a processing furnace part in a longitudinal sectional view
- FIG. 5 is a schematic configuration diagram of a processing furnace of a substrate processing apparatus suitably used in still another embodiment of the present invention, and is a view showing a processing furnace part in a longitudinal sectional view.
- the substrate processing apparatus 10 is configured as an example of an apparatus used in a substrate processing process, which is a process of manufacturing a semiconductor device (device).
- the processing furnace 202 is provided with a heater 207 as a heating means (heating mechanism, heating system).
- the heater 207 is formed in a cylindrical shape whose upper side is closed.
- reaction tube 203 constituting a reaction vessel (processing vessel) concentrically with the heater 207 is disposed.
- the reaction tube 203 is made of a heat-resistant material or the like (for example, quartz (SiO 2 ) or silicon carbide (SiC)), and is formed in a cylindrical shape with the upper end closed and the lower end opened.
- a manifold 209 made of a metal material such as stainless steel is attached to the lower end of the reaction tube 203.
- the manifold 209 is formed in a cylindrical shape, and its lower end opening is airtightly closed by a seal cap 219 as a lid made of a metal material such as stainless steel.
- An O-ring 220 as a seal member is provided between the reaction tube 203 and the manifold 209 and between the manifold 209 and the seal cap 219, respectively.
- a processing container is mainly constituted by the reaction tube 203, the manifold 209, and the seal cap 219, and a processing chamber 201 is formed inside the processing container.
- the processing chamber 201 is configured so that wafers 200 as substrates can be accommodated by a boat 217, which will be described later, in a horizontal posture and arranged in multiple stages in the vertical direction.
- a rotation mechanism 267 that rotates the boat 217 is installed on the side of the seal cap 219 opposite to the processing chamber 201.
- a rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217.
- the rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217.
- the seal cap 219 is configured to be lifted and lowered in the vertical direction by a boat elevator 115 as a lifting mechanism vertically installed outside the reaction tube 203.
- the boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by moving the seal cap 219 up and down. That is, the boat elevator 115 is configured as a transfer device (transfer mechanism) that transfers the boat 217, that is, the wafers 200 into and out of the processing chamber 201.
- the boat 217 serving as a substrate holder is configured to support a plurality of, for example, 25 to 200 wafers 200 in a horizontal posture and in a multi-stage by aligning them in the vertical direction with their centers aligned. Are arranged so as to be spaced apart.
- the boat 217 is made of a heat resistant material or the like (for example, quartz or SiC).
- heat insulating plates 218 made of a heat-resistant material or the like (for example, quartz or SiC) are supported in multiple stages in a horizontal posture. With this configuration, heat from the heater 207 is not easily transmitted to the seal cap 219 side.
- this embodiment is not limited to the above-mentioned form.
- a heat insulating cylinder configured as a cylindrical member made of a heat resistant material such as quartz or SiC may be provided.
- the heater 207 can heat the wafer 200 accommodated in the processing chamber 201 to a predetermined temperature.
- nozzles 410 and 420 are provided so as to penetrate the side wall of the manifold 209.
- Gas supply pipes 310 and 320 as gas supply lines are connected to the nozzles 410 and 420, respectively.
- the processing furnace 202 is provided with the two nozzles 410 and 420 and the two gas supply pipes 310 and 320, and a plurality of types, two types of gas (processing) in the processing chamber 201. Gas) can be supplied through dedicated lines.
- the gas supply pipes 310 and 320 are respectively provided with mass flow controllers (MFC) 312 and 322 as flow rate controllers (flow rate control units) and valves 314 and 324 as opening / closing valves in order from the upstream side.
- Nozzles 410 and 420 are connected (connected) to the distal ends of the gas supply pipes 310 and 320, respectively.
- the nozzles 410 and 420 are configured as L-shaped long nozzles, and the horizontal portion thereof is provided so as to penetrate the side wall of the manifold 209.
- the vertical portions of the nozzles 410 and 420 are in an annular space formed between the inner wall of the reaction tube 203 and the wafer 200, and upward (upward in the stacking direction of the wafer 200) along the inner wall of the reaction tube 203. It is provided to rise (that is, to rise from one end side to the other end side of the wafer arrangement region). That is, the nozzles 410 and 420 are provided on the side of the wafer arrangement area where the wafers 200 are arranged, in an area that horizontally surrounds the wafer arrangement area, along the wafer arrangement area.
- Gas supply holes 410a and 420a for supplying (spouting) gas are provided on the side surfaces of the nozzles 410 and 420, respectively.
- the gas supply holes 410 a and 420 a are opened to face the center of the reaction tube 203.
- a plurality of the gas supply holes 410a and 420a are provided from the lower part to the upper part of the reaction tube 203, have the same opening area, and are provided at the same opening pitch.
- the gas supply method according to the present embodiment is an annular vertically long space defined by the inner wall of the reaction tube 203 and the ends of the stacked wafers 200, that is, a cylindrical shape.
- Gas is conveyed through nozzles 410 and 420 disposed in the space, and gas is first ejected into the reaction tube 203 from the gas supply holes 410a and 420a opened in the nozzles 410 and 420, respectively, in the vicinity of the wafer 200.
- the main flow of gas in the reaction tube 203 is set to a direction parallel to the surface of the wafer 200, that is, a horizontal direction.
- a gas flowing on the surface of each wafer 200 that is, a gas remaining after the reaction (residual gas) flows toward an exhaust port, that is, an exhaust pipe 231 to be described later.
- the direction is appropriately specified depending on the position of the exhaust port, and is not limited to the vertical direction.
- carrier gas supply pipes 510 and 520 for supplying a carrier gas are connected to the gas supply pipes 310 and 320, respectively.
- Carrier gas supply pipes 510 and 520 are provided with MFCs 512 and 522 and valves 514 and 524, respectively.
- a raw material gas containing a metal element (metal-containing raw material, metal-containing gas, metal raw material) is supplied from the gas supply pipe 310 as a processing gas via the MFC 312, the valve 314, and the nozzle 410. Supplied in.
- the source gas for example, tungsten hexafluoride (WF 6 ) gas that is a W-containing source gas containing tungsten (W) as a metal element is used.
- WF 6 gas acts as a W source in a substrate processing step described later.
- a reducing gas is supplied as a processing gas as a processing gas into the processing chamber 201 through the MFC 322, the valve 324, and the nozzle 420.
- a reducing gas is supplied as a processing gas as a processing gas into the processing chamber 201 through the MFC 322, the valve 324, and the nozzle 420.
- diborane (B 2 H 6 ) is used as the reducing gas, for example, as the boron (B) -containing gas.
- B 2 H 6 gas acts as a B source in a substrate processing step to be described later.
- an inert gas for example, nitrogen (N 2 ) gas is supplied into the processing chamber 201 through the MFCs 512 and 522, the valves 514 and 524, and the nozzles 410 and 420, respectively.
- N 2 gas nitrogen
- the inert gas for example, argon (Ar) gas, helium (He) gas, neon (Ne) gas in addition to N 2 gas.
- a rare gas such as xenon (Xe) gas may be used.
- the processing gas, the raw material gas, and the reducing gas are vaporized raw materials and reducing agents, for example, raw materials and reducing agents that are in a liquid state or a solid state at room temperature and normal pressure. Or a raw material or a reducing agent that is in a gaseous state at normal temperature and pressure.
- raw material when used, it means “liquid raw material in a liquid state”, “solid raw material in a solid state”, “source gas in a gaseous state”, or a combination thereof.
- reducing agent a liquid reducing agent in a liquid state
- a solid reducing agent in a solid state a reducing gas in a gaseous state
- a combination thereof May mean.
- liquid raw materials that are in a liquid state at room temperature and normal pressure, or solid raw materials that are in a solid state at normal temperature and pressure vaporize or sublimate the liquid raw material or solid raw material with a system such as a vaporizer, bubbler, or sublimator.
- a system such as a vaporizer, bubbler, or sublimator.
- the processing gas supply system is mainly configured by the gas supply pipes 310 and 320, the MFCs 312 and 322, and the valves 314 and 324.
- the nozzles 410 and 420 may be included in the processing gas supply system.
- the processing gas supply system can be simply referred to as a gas supply system.
- a raw material gas supply system is mainly configured by the gas supply pipe 310, the MFC 312 and the valve 314.
- the nozzle 410 may be included in the source gas supply system.
- the source gas supply system can also be referred to as a source supply system.
- a W-containing gas supply system is mainly configured by the gas supply pipe 310, the MFC 312 and the valve 314.
- the nozzle 410 may be included in the W-containing gas supply system.
- the W-containing gas supply system can be referred to as a W-containing raw material supply system, or can be simply referred to as a W raw material supply system.
- W-containing gas supply system When flowing WF 6 gas from the gas supply pipe 310, it may also be referred to as the W-containing gas supply system and the WF 6 gas supply system.
- the WF 6 gas supply system can also be referred to as a WF 6 supply system.
- a reducing gas supply system as a reaction gas supply system is mainly configured by the gas supply pipe 320, the MFC 322, and the valve 324.
- the nozzle 420 may be included in the reducing gas supply system.
- the reducing gas supply system can also be referred to as a reducing agent supply system.
- a B-containing gas supply system is mainly configured by the gas supply pipe 320, the MFC 322, and the valve 324.
- the nozzle 420 may be included in the B-containing gas supply system.
- the B-containing gas supply system can also be referred to as a B-containing reducing gas supply system, and can also be referred to as a B-containing reducing agent supply system. If flow B 2 H 6 gas from the gas supply pipe 320, may also be referred to as a B-containing gas supply system and B 2 H 6 gas supply system.
- the B 2 H 6 gas supply system can also be referred to as a B 2 H 6 supply system.
- a carrier gas supply system is mainly constituted by the carrier gas supply pipes 510 and 520, the MFC 512, 522, and the valves 514 and 524.
- the carrier gas supply system can also be referred to as an inert gas supply system. Since this inert gas also acts as a purge gas, the inert gas supply system can also be referred to as a purge gas supply system.
- the manifold 209 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201.
- the exhaust pipe 231 is provided so as to penetrate the side wall of the manifold 209.
- the exhaust pipe 231 is provided at a position facing the nozzles 410 and 420 across the wafer 200 in plan view.
- the exhaust pipe 231 includes, in order from the upstream side, a pressure sensor 245 as a pressure detector (pressure detector) that detects the pressure in the processing chamber 201, and a pressure controller (pressure controller) that controls the pressure in the processing chamber 201.
- APC Auto Pressure Controller
- APC valve 243 and a vacuum pump 246 as a vacuum exhaust device are connected.
- the APC valve 243 can open and close the vacuum pump 246 while the vacuum pump 246 is operated, thereby performing vacuum exhaust and stop the vacuum exhaust in the processing chamber 201. Further, with the vacuum pump 246 operated,
- the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening based on the pressure information detected by the pressure sensor 245.
- the APC valve 243 constitutes a part of the exhaust flow path of the exhaust system, and not only functions as a pressure adjusting unit, but also closes or further seals the exhaust flow path of the exhaust system. It also functions as a possible exhaust flow path opening / closing part, that is, an exhaust valve.
- the exhaust pipe 231 has a trap device that captures reaction by-products and unreacted source gas in the exhaust gas, and a detoxification device that removes corrosive components and toxic components contained in the exhaust gas. May be connected.
- An exhaust system, that is, an exhaust line, is mainly configured by the exhaust pipe 231, the APC valve 243, and the pressure sensor 245.
- the vacuum pump 246 may be included in the exhaust system.
- a trap device or a detoxifying device may be included in the exhaust system.
- a temperature sensor 263 as a temperature detector is installed in the reaction tube 203, and the temperature in the processing chamber 201 is adjusted by adjusting the energization amount to the heater 207 based on the temperature information detected by the temperature sensor 263. It is configured to have a desired temperature distribution.
- the temperature sensor 263 is configured in an L shape like the nozzles 410 and 420, and is provided along the inner wall of the reaction tube 203.
- the controller 121 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. ing.
- the RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e.
- An input / output device 122 configured as a touch panel or the like is connected to the controller 121.
- the storage device 121c includes a flash memory, an HDD (HardDisk Drive), and the like.
- a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner.
- the process recipe is a combination of instructions so that the controller 121 can execute each procedure in the substrate processing process described later and obtain a predetermined result, and functions as a program.
- the process recipe, the control program, and the like are collectively referred to as simply a program.
- program When the term “program” is used in this specification, it may include only a process recipe alone, only a control program alone, or both.
- the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.
- the I / O port 121d includes the above-described MFC 312, 322, 512, 522, valve 314, 324, 514, 524, APC valve 243, pressure sensor 245, vacuum pump 246, heater 207, temperature sensor 263, rotating mechanism 267, boat It is connected to the elevator 115 and the like.
- the CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a process recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like.
- the CPU 121a adjusts the flow rates of various gases by the MFCs 312, 322, 512, and 522, opens and closes the valves 314, 324, 514, and 524, opens and closes the APC valve 243, and the pressure sensor 245 by the APC valve 243.
- Pressure adjustment operation based on the temperature sensor, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the start and stop of the vacuum pump 246, the rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, the lifting and lowering operation of the boat 217 by the boat elevator 115, etc. Is configured to control.
- the controller 121 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer.
- an external storage device storing the above-described program for example, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card
- the controller 121 of this embodiment can be configured by installing a program in a general-purpose computer using the external storage device 123.
- the means for supplying the program to the computer is not limited to supplying the program via the external storage device 123.
- the program may be supplied without using the external storage device 123 by using communication means such as the Internet or a dedicated line.
- the storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
- recording medium When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.
- Step 2 Substrate Processing Step An example of a step of forming a metal film on a substrate will be described with reference to FIGS. 4A and 4B as a step of manufacturing a semiconductor device (device).
- the step of forming the metal film is performed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 121.
- a process of supplying, for example, B 2 H 6 gas as a reducing gas to a wafer 200 as a substrate having an insulating surface and a conductive surface In contrast, for example, the W film is insulated as the metal film by performing a predetermined number of cycles (asynchronous, intermittent, pulsed) of supplying WF 6 gas, for example, as the metal-containing gas. Selectively formed on the surface. At that time, the step of supplying the B 2 H 6 gas is performed prior to the step of supplying the WF 6 gas.
- processing or process, cycle, step, etc. is performed a predetermined number of times” means that this processing or the like is performed once or a plurality of times. That is, it means that the process is performed once or more.
- time division means that the time division (separation) is performed.
- performing each process in a time-sharing manner means that each process is performed asynchronously (not performed simultaneously), that is, performed without being synchronized (not performed simultaneously). Yes.
- each process is performed intermittently (pulse-like) and alternately. That is, it means that the processing gases supplied in each process are supplied so as not to mix with each other.
- the process gases supplied in each process are alternately supplied so as not to mix with each other.
- wafer when the term “wafer” is used in this specification, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface thereof”. ", That is, a predetermined layer or film formed on the surface may be referred to as a wafer.
- wafer surface when the term “wafer surface” is used in this specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.
- the phrase “supplying a predetermined gas to the wafer” means “supplying a predetermined gas directly to the surface (exposed surface) of the wafer itself”. , It may mean that “a predetermined gas is supplied to a layer, a film, or the like formed on the wafer, that is, to the outermost surface of the wafer as a laminated body”. Further, in this specification, when “describe a predetermined layer (or film) on the wafer” is described, “determine a predetermined layer (or film) directly on the surface (exposed surface) of the wafer itself”. This means that a predetermined layer (or film) is formed on a layer or film formed on the wafer, that is, on the outermost surface of the wafer as a laminate. There is a case.
- substrate in this specification is the same as the term “wafer”. In that case, in the above description, “wafer” is replaced with “substrate”. Good.
- metal film means a film (also simply referred to as a conductor film) made of a conductive substance containing a metal atom (including a metal element). Is a single metal film mainly composed of only metal atoms (a film composed of a single metal element, that is, a film mainly composed of a metal element), a conductive metal nitride film (metal nitride film), and a conductive film.
- Conductive metal oxide film (metal oxide film), conductive metal oxynitride film (metal oxynitride film), conductive metal oxycarbide film (metal oxycarbide film), conductive metal composite film, conductive Examples include metal alloy films, conductive metal silicide films (metal silicide films), conductive metal carbide films (metal carbide films), conductive metal carbonitride films (metal carbonitride films), and the like.
- the W film is a conductive metal film and is a single metal film.
- W film (or W layer) means a film or layer composed of W alone, that is, a film or layer containing W as a main component. Therefore, each portion expressed as “a film (or layer) formed of W alone” can be read as “a film (or layer) containing W as a main component”.
- the wafer 200 when it is loaded into the processing chamber 201 that is, the wafer 200 before the formation of both the B-containing layer and the W layer described later is referred to as an “initial state wafer 200”.
- an initial state wafer 200 An example of the structure of the wafer 200 in the initial state will be described with reference to FIG.
- the initial wafer 200 has a structure in which the insulating film 600 and the conductor film 610 are exposed on the surface. That is, the wafer 200 in the initial state has an insulating surface 601 and a conductive surface 611. Such a structure may be formed by any method.
- the insulating film 600 is, for example, a silicon oxide film (SiO film).
- the conductor film 610 is, for example, a metal film, and more specifically, for example, a copper film (Cu film).
- the processing chamber 201 is evacuated by a vacuum pump 246 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 keeps operating at least until the processing on the wafer 200 is completed. Further, the wafer 200 in the processing chamber 201 is heated by the heater 207 so as to reach a desired temperature. At this time, the energization amount to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the processing chamber 201 has a desired temperature distribution (temperature adjustment).
- the heating of the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.
- the rotation mechanism 267 starts the rotation of the boat 217 and the wafer 200. Note that the rotation of the boat 217 and the wafer 200 by the rotation mechanism 267 is continuously performed at least until the processing on the wafer 200 is completed.
- the W film forming process includes a B 2 H 6 gas (reducing gas) supply step, a residual gas removal step, a WF 6 gas (metal-containing gas) supply step, and a residual gas removal step, which will be described below.
- B 2 H 6 gas supply step The valve 324 is opened and B 2 H 6 gas is allowed to flow into the gas supply pipe 320.
- the flow rate of the B 2 H 6 gas that has flowed through the gas supply pipe 320 is adjusted by the MFC 322, supplied from the gas supply hole 420 a of the nozzle 420 into the processing chamber 201, and exhausted from the exhaust pipe 231.
- B 2 H 6 gas is supplied to the wafer 200. That is, the surface of the wafer 200 is exposed to B 2 H 6 gas.
- the valve 524 is opened, and N 2 gas is caused to flow into the carrier gas supply pipe 520.
- the N 2 gas that has flowed through the carrier gas supply pipe 520 is adjusted in flow rate by the MFC 522, supplied to the processing chamber 201 together with the B 2 H 6 gas, and exhausted from the exhaust pipe 231.
- the valve 514 is opened and N 2 gas is allowed to flow into the carrier gas supply pipe 510.
- the N 2 gas is supplied into the processing chamber 201 through the gas supply pipe 310 and the nozzle 410 and is exhausted from the exhaust pipe 231.
- the APC valve 243 is adjusted appropriately so that the pressure in the processing chamber 201 is, for example, a pressure in the range of 1 Pa to 1000 Pa, preferably 10 to 500 Pa, for example, 50 Pa.
- the pressure in the processing chamber 201 is lower than 1 Pa, the film formation rate may be reduced.
- the selectivity may be broken (selectivity may not be obtained).
- the supply flow rate of the B 2 H 6 gas controlled by the MFC 322 is, for example, a flow rate in the range of 1 sccm to 15000 sccm, preferably 6000 to 10,000 sccm, for example, 8000 sccm.
- the supply flow rate of N 2 gas controlled by the MFCs 512 and 522 is, for example, a flow rate in the range of 1 to 10000 sccm, preferably 1000 to 4000 sccm, for example, 2500 sccm. If the supply flow rate of N 2 gas is less than 1 sccm, the film forming rate may decrease or the in-plane film thickness uniformity may deteriorate. If it exceeds 10000 sccm, the selectivity is broken or the in-plane film thickness uniformity deteriorates.
- the time for supplying the B 2 H 6 gas to the wafer 200 is, for example, a time within the range of 1 second to 60 seconds, and preferably 10 to 30 seconds. 20 seconds. If the gas supply time is shorter than 1 second, the film forming rate may be reduced or the in-plane film thickness uniformity may be deteriorated. If it is longer than 60 seconds, the selectivity is broken or the in-plane film thickness uniformity is deteriorated. Sometimes.
- the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 is in the range of 150 to 300 ° C., for example, preferably 160 to 200 ° C., for example, 175 ° C.
- the temperature of the wafer 200 is lower than 150 ° C., the reaction between the B 2 H 6 gas and the insulating film 600 of the wafer 200 may be difficult, and when it is higher than 300 ° C., the selectivity may be broken.
- a B-containing layer is selectively formed on the insulating film 600 of the wafer 200 (on the insulating surface 601).
- a certain film (layer) is substantially formed only on a base having a specific composition, and other compositions are formed. It means that it is not substantially formed on the underlying substrate. That is, here, the B-containing layer is substantially formed only on the insulating film 600 of the wafer 200 (on the insulating surface 601), and substantially on the conductor film 610 (on the conductive surface 611). ) Means not forming.
- substantially formed / not formed includes that the B-containing layer is slightly formed on the conductor film 610 unintentionally, and that the B-containing layer is easily formed on the insulating film 600. This includes that it is difficult to form on the conductor film 610. That is, the B-containing layer is not formed or hardly formed on the conductive film 610 on the wafer 200 (on the conductive surface 611), and compared with this, the B-containing layer is not formed on the insulating film 600 of the wafer 200. It is easy to form (on the insulating surface 601).
- the B-containing layer is thus selectively formed on the insulating surface 601 of the wafer 200. It is presumed that it is formed (preferentially).
- the B-containing layer is a discontinuous layer other than a continuous layer composed of B, a continuous layer composed of B and containing H (B layer containing H), a discontinuous layer, It is a generic term that includes the B thin film containing H formed by overlapping.
- a continuous layer composed of B and containing H may be referred to as a B thin film containing H.
- B constituting the B-containing layer containing H includes not only the bond with H not completely broken but also the one with bond completely broken with H.
- the valve 324 is closed and the supply of B 2 H 6 gas is stopped.
- the APC valve 243 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the B 2 H 6 gas that has remained in the processing chamber 201 or has contributed to the formation of the B-containing layer.
- the valves 514 and 524 are kept open, and the supply of N 2 gas into the processing chamber 201 is maintained.
- the N 2 gas acts as a purge gas, and it is possible to enhance the effect of removing the unreacted B 2 H 6 gas remaining in the processing chamber 201 or the B 2 H 6 gas after contributing to the formation of the B-containing layer from the processing chamber 201.
- the gas remaining in the processing chamber 201 may not be completely removed, and the inside of the processing chamber 201 may not be completely purged.
- a trace amount of gas may remain in the processing chamber 201 as long as there is no adverse effect in subsequent steps.
- the flow rate of the N 2 gas supplied into the processing chamber 201 does not need to be a large flow rate.
- Purge can be performed to the extent that no adverse effect occurs in the subsequent steps.
- the purge time can be shortened and the throughput can be improved.
- consumption of N 2 gas can be minimized.
- the valve 314 is opened and WF 6 gas is allowed to flow into the gas supply pipe 310.
- the flow rate of the WF 6 gas flowing through the gas supply pipe 310 is adjusted by the MFC 312, supplied from the gas supply hole 410 a of the nozzle 410 into the processing chamber 201, and exhausted from the exhaust pipe 231.
- WF 6 gas is supplied to the wafer 200. That is, the surface of the wafer 200 is exposed to WF 6 gas.
- the valve 514 is opened and N 2 gas is allowed to flow into the carrier gas supply pipe 510.
- the N 2 gas that has flowed through the carrier gas supply pipe 510 is adjusted in flow rate by the MFC 512, supplied into the processing chamber 201 together with the WF 6 gas, and exhausted from the exhaust pipe 231.
- the valve 524 is opened and N 2 gas is allowed to flow into the carrier gas supply pipe 520.
- the N 2 gas is supplied into the processing chamber 201 through the gas supply pipe 320 and the nozzle 420 and is exhausted from the exhaust pipe 231.
- the APC valve 243 is adjusted appropriately so that the pressure in the processing chamber 201 is, for example, a pressure in the range of 1 Pa to 1000 Pa, preferably 10 to 500 Pa, for example, 50 Pa. If the pressure in the processing chamber 201 is lower than 1 Pa, the film forming rate may be reduced or the in-plane film thickness uniformity may be deteriorated. If the pressure is higher than 1000 Pa, the selectivity may be broken (selectivity may not be obtained). In-plane film thickness uniformity may deteriorate.
- the supply flow rate of the WF 6 gas controlled by the MFC 312 is, for example, a flow rate in the range of 1 sccm to 1000 sccm, preferably 100 to 500 sccm, for example, 300 sccm. If the supply flow rate of the WF 6 gas is less than 1 sccm, the film formation rate may decrease or the in-plane film thickness uniformity may deteriorate. If it exceeds 1000 sccm, the selectivity may be broken, or the in-plane film thickness uniformity may decrease. It may get worse.
- the supply flow rate of N 2 gas controlled by the MFCs 512 and 522 is, for example, a flow rate in the range of 1 to 10000 sccm, preferably 1000 to 5000 sccm, for example, 3500 sccm. If the supply flow rate of N 2 gas is less than 1 sccm, the film forming rate may decrease or the in-plane film thickness uniformity may deteriorate. If it exceeds 10000 sccm, the selectivity is broken or the in-plane film thickness uniformity deteriorates. There is a case to do.
- the time for supplying the WF 6 gas to the wafer 200 is, for example, in the range of 1 second to 60 seconds, preferably 10 to 30 seconds, for example, 20 seconds. And If the gas supply time is shorter than 1 second, the film forming rate may be reduced or the in-plane film thickness uniformity may be deteriorated. If it is longer than 60 seconds, the selectivity is broken or the in-plane film thickness uniformity is deteriorated. Sometimes. At this time, the temperature of the heater 207 is set to a temperature similar to, for example, the B 2 H 6 gas supply step.
- the B-containing layer formed above the insulating film 600 of the wafer 200 reacts with the WF 6 gas, and above the insulating film 600 of the wafer 200.
- the W layer is selectively (preferentially) formed on (above the insulating surface 601). That is, the W layer is not formed on the region other than the B-containing layer, or is difficult to be formed. Compared to this, the W layer is easily formed on the B-containing layer.
- the W layer for example, a layer having a thickness of less than one atomic layer to several atomic layers is formed.
- the W layer may be a layer composed of W alone having a thickness of less than one atomic layer to several atomic layers, that is, a layer mainly composed of W, or an adsorption layer of WF 6 gas.
- it may be a W-containing layer containing at least one of B, H and F, or a layer containing a plurality of these.
- Adsorption layers of the WF 6 gas, other continuous adsorption layer of gas molecules WF 6 gas also includes a discontinuous adsorption layer. That is, the adsorption layer of WF 6 gas includes an adsorption layer having a thickness of less than one molecular layer or less than one molecular layer composed of WF 6 molecules. WF 6 molecules constituting the adsorption layer of the WF 6 gas, including those bonds between W and F are partially broken. That is, the WF 6 gas adsorption layer may be a WF 6 gas physical adsorption layer, a WF 6 gas chemisorption layer, or both of them.
- the W-containing layer containing F is a generic name including a discontinuous layer and a W thin film containing F formed by overlapping these layers in addition to a continuous layer (a W layer containing F) made of W and containing F. It is.
- a continuous layer composed of W and containing F may be referred to as a W thin film containing F.
- W constituting the W-containing layer containing F includes not only the bond with F not completely broken but also the bond with F completely broken.
- a gaseous substance containing at least one of B, H and F for example, fluorine
- B, H and F for example, fluorine
- Reaction by-products such as hydrogen fluoride (HF)
- HF hydrogen fluoride
- the N 2 gas acts as a purge gas, and can enhance the effect of removing the unreacted WF 6 gas remaining in the processing chamber 201 or contributing to the formation of the W layer from the processing chamber 201. At this time, when a by-product is generated in the processing chamber 201 due to the formation of the W layer, the by-product is also excluded from the processing chamber 201.
- the gas remaining in the processing chamber 201 may not be completely removed, and the processing chamber 201 may not be completely purged. Good
- a W film having a predetermined thickness can be formed on the wafer 200.
- the above cycle is preferably repeated multiple times.
- a W film can be selectively (preferentially) formed on the insulating film 600 of the wafer 200. That is, the W film can be selectively formed directly on the insulating surface 601 of the wafer 200.
- the selective formation of the W film on the insulating film 600 is performed during the incubation time, which is the time required for the growth of the W film on the conductive film 610 to start. It is thought that Therefore, in order to increase the selection ratio of the selective formation of the W film on the insulating film 600, the total number of times of performing the above-described cycle in the process of forming the W film, the total processing time is the conductor film of the W film. It is preferred to select to be less than the incubation time for growth on 610.
- the incubation time in the growth of the W film on the conductor film 610 is longer.
- the W film formed on the wafer 200 is heat-treated.
- the energization amount to the heater 207 is adjusted so that the temperature of the wafer 200 is 600 ° C. or higher, for example, 800 to 850 ° C., and the W film is heat-treated (annealed).
- the annealing process is performed in an inert gas atmosphere such as N 2 gas.
- the annealing treatment time is, for example, a predetermined time within a range of 1 to 120 seconds.
- the W film formation step and the heat treatment step are performed in the same processing chamber 201 (in-situ).
- the W film formation step and the heat treatment step are different from each other. It can also be performed in a processing chamber (ex-situ). If both processes are performed in-situ, the wafer 200 can be consistently processed while being kept under vacuum without being exposed to the air on the way, and a stable film forming process can be performed. it can. If both processes are performed ex-situ, the temperature in each process chamber can be preset to, for example, the process temperature in each process, or a temperature close thereto, reducing the time required for temperature adjustment and improving production efficiency. Can be increased. Note that this heat treatment step may not be performed.
- the above-described B 2 H 6 gas supply step, residual gas removal step, WF 6 gas supply step, and residual gas removal step are performed one or more times in a time-sharing (asynchronous, intermittent, or pulsed) sequence. After performing (predetermined number of times), purging and atmospheric pressure return described later are performed.
- N 2 gas is supplied into the processing chamber 201 from each of the gas supply pipes 510 and 520 while the valves 514 and 524 are open, and exhausted from the exhaust pipe 231.
- the N 2 gas acts as a purge gas, whereby the inside of the processing chamber 201 is purged with an inert gas, and the gas and by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).
- a process of supplying B 2 H 6 gas to the wafer 200 having the insulating surface 601 and the conductive surface 611, and supplying WF 6 gas to the wafer 200 can be selectively formed (grown) on the insulating surface by performing a predetermined number of cycles in which the steps are time-divisionally (asynchronously, intermittently, and pulsed).
- the W film can be selectively grown on the insulating surface, that is, the W film can be reversely grown selectively.
- B 2 H 6 gas is exemplified as the reducing gas, but the reducing gas is not limited to B 2 H 6 gas.
- a B-containing gas can be preferably used.
- an inorganic borane-based gas such as triborane (B 3 H 8 ) gas can be used.
- the WF 6 gas is exemplified as the metal-containing gas that becomes the source gas of the W film, but the metal-containing gas that becomes the source gas of the W film is not limited to the WF 6 gas.
- the metal-containing gas that becomes the source gas for the W film other tungsten halide gas such as tungsten hexachloride (WCl 6 ) gas can be used in addition to WF 6 gas.
- the W film is exemplified as the metal film selectively formed on the insulating surface on the wafer.
- a metal film selectively formed on the insulating surface in addition to the W film, for example, a titanium (Ti) film, a tantalum (Ta) film, a molybdenum (Mo) film, a zinc (Zn) film, a ruthenium (Ru) film, an aluminum (Al) film, or the like may be formed.
- a metal-containing gas that is reduced by a reducing gas that is a B-containing gas, such as a metal halide gas can be used as a metal-containing gas.
- examples of the metal-containing gas used as the raw material gas for the metal film include titanium tetrafluoride (TiF 4 ) gas, titanium tetrachloride (TiCl 4 ) gas, tantalum pentafluoride (TaF 5 ) gas, and pentachloride.
- the insulating film exposed on the surface of the wafer that is, the material constituting the insulating surface serving as a base on which the metal film is selectively formed is exemplified, but the insulating surface
- the constituent material is not limited to SiO.
- an element having an unshared electron pair for example, a material containing O or N can be preferably used. Examples of such materials include SiO, silicon nitride (SiN), silicon oxynitride (SiON), and the like (for more detailed description, refer to the examples described later).
- Cu is exemplified as the material of the conductor film exposed on the surface of the wafer, that is, the material constituting the conductive surface on which the metal film is not formed.
- the constituent material of the conductive surface is Cu. It is not limited.
- various metal materials conductive materials containing a metal element
- Al aluminum
- Ti titanium
- TiN titanium nitride
- Tantalum Ta
- tantalum nitride TaN
- each modification, each application, and the like can be used in appropriate combination.
- the processing conditions at this time can be set to the same processing conditions as in the above-described embodiment, for example.
- the process recipes are the contents of the substrate processing (film type, composition ratio, film quality, film thickness, processing procedure, processing of the thin film to be formed) It is preferable to prepare individually (multiple preparations) according to the conditions. And when starting a substrate processing, it is preferable to select a suitable process recipe suitably from several process recipes according to the content of a substrate processing.
- the substrate processing apparatus includes a plurality of process recipes individually prepared according to the contents of the substrate processing via an electric communication line or a recording medium (external storage device 123) on which the process recipe is recorded. It is preferable to store (install) in the storage device 121c in advance.
- the CPU 121a included in the substrate processing apparatus When starting the substrate processing, the CPU 121a included in the substrate processing apparatus appropriately selects an appropriate process recipe from a plurality of process recipes stored in the storage device 121c according to the content of the substrate processing. Is preferred. With this configuration, thin films with various film types, composition ratios, film qualities, and film thicknesses can be formed for general use with good reproducibility using a single substrate processing apparatus. In addition, it is possible to reduce the operation burden on the operator (such as an input burden on the processing procedure and processing conditions), and to quickly start the substrate processing while avoiding an operation error.
- the above-described process recipe is not limited to the case of creating a new process, and can be realized by changing the process recipe of an existing substrate processing apparatus, for example.
- the process recipe according to the present invention is installed in an existing substrate processing apparatus via a telecommunication line or a recording medium recording the process recipe, or input / output of the existing substrate processing apparatus It is also possible to operate the apparatus and change the process recipe itself to the process recipe according to the present invention.
- the substrate processing apparatus is a batch type vertical apparatus that processes a plurality of substrates at a time, and a nozzle for supplying a processing gas is erected in one reaction tube.
- a processing furnace having a structure in which an exhaust port is provided in the lower part has been described
- the present invention can also be applied to a case where a film is formed using a processing furnace having another structure.
- there are two reaction tubes having a concentric cross section the outer reaction tube is called an outer tube and the inner reaction tube is called an inner tube), and a side wall of the outer tube is provided from a nozzle standing in the inner tube.
- the present invention can also be applied to a case where a film is formed using a processing furnace having a structure in which a processing gas flows to an exhaust port that opens to a position (axisymmetric position) facing the nozzle with the substrate interposed therebetween.
- the processing gas may be supplied from a gas supply port that opens in a side wall of the inner tube, instead of being supplied from a nozzle standing in the inner tube.
- the exhaust port opened to the outer tube may be opened according to the height at which there are a plurality of substrates stacked and accommodated in the processing chamber.
- the shape of the exhaust port may be a hole shape or a slit shape.
- the present invention is not limited to this, and the present invention is not limited to this.
- the present invention can also be suitably applied when a film is formed using a single-wafer type substrate processing apparatus that processes one or several substrates.
- a thin film is formed using a substrate processing apparatus having a hot wall type processing furnace has been described.
- the present invention is not limited to this, and a cold wall type processing furnace is provided.
- the present invention can also be suitably applied when forming a thin film using a substrate processing apparatus. Even in these cases, the processing conditions can be the same processing conditions as in the above-described embodiment, for example.
- the processing furnace 302 includes a processing container 303 that forms the processing chamber 301, a shower head 303s that supplies gas into the processing chamber 301 in a shower shape, and a support base 317 that supports one or several wafers 200 in a horizontal posture. And a rotating shaft 355 that supports the support base 317 from below, and a heater 307 provided on the support base 317.
- a gas supply port 332a for supplying the source gas and a gas supply port 332b for supplying the reducing gas are connected to the inlet (gas inlet) of the shower head 303s.
- a source gas supply system similar to the source gas supply system of the above-described embodiment is connected to the gas supply port 332a.
- a reducing gas supply system similar to the reducing gas supply system of the above-described embodiment is connected to the gas supply port 332b.
- a gas dispersion plate that supplies gas into the processing chamber 301 in a shower shape is provided.
- the processing vessel 303 is provided with an exhaust port 331 for exhausting the inside of the processing chamber 301.
- An exhaust system similar to the exhaust system of the above-described embodiment is connected to the exhaust port 331.
- the present invention can also be suitably applied to the case where a film is formed using a substrate processing apparatus including the processing furnace 402 shown in FIG.
- the processing furnace 402 includes a processing container 403 that forms a processing chamber 401, a support base 417 that supports one or several wafers 200 in a horizontal position, a rotating shaft 455 that supports the support base 417 from below, and a processing container.
- a lamp heater 407 that irradiates the wafer 200 with light 403 and a quartz window 403w that transmits light from the lamp heater 407 are provided.
- the processing vessel 403 is connected to a gas supply port 432a that supplies the above-described source gas and a gas supply port 432b that supplies the above-described reducing gas.
- a source gas supply system similar to the source gas supply system of the above-described embodiment is connected to the gas supply port 432a.
- a reducing gas supply system similar to the reducing gas supply system of the above-described embodiment is connected to the gas supply port 432b.
- the processing container 403 is provided with an exhaust port 431 for exhausting the inside of the processing chamber 401.
- An exhaust system similar to the exhaust system of the above-described embodiment is connected to the exhaust port 431.
- film formation can be performed in the same sequence and processing conditions as in the above-described embodiment and modification.
- the test wafer includes a base material 620, an insulating film 600 and a conductor film 610 formed on the base material 620 in a line and space (L / S) pattern.
- the base material 620 is made of silicon
- the insulating film 600 is made of SiO.
- a conductor film 610 is formed in the groove formed in the insulating film 600.
- the conductor film 610 includes a Ta film 612 covering the inner surface of the groove, a TaN film 613 formed on the Ta film 612, and a Cu film 614 filled on the TaN film 613.
- the width of the conductor film 610 is, for example, several tens to several hundreds of nm, and the length of the conductor film 610 is, for example, several mm.
- a W film was formed on a test wafer by performing 100 cycles.
- the pressure in film formation is, for example, a value in the range of 50 to 1000 Pa
- the supply flow rate of B 2 H 6 gas is in the range of 30 to 50 sccm
- the supply flow rate of WF 6 gas is in the range of 3 to 7 sccm, for example.
- the value of In the experiment, the B 2 H 6 gas was used after diluted with H 2 gas.
- the B 2 H 6 gas supply time, residual gas removal time, WF 6 gas supply time, and residual gas removal time per cycle were, for example, 5 seconds, 5 seconds, 2 seconds, and 5 seconds, respectively.
- FIG. 6 shows scanning electron microscope (SEM) photographs as a result of forming W films on wafers having various L / S patterns. From the left, a pattern (150 nm, 1: 3) in which the conductor film width is 150 nm and the insulating film width is three times 450 nm (150 nm, 1: 3), and a pattern in which the conductor film width is 150 nm and the insulating film width is the same 150 nm (150 nm, 1: 1) A pattern (100 nm, 1: 3) in which the conductor film width is 100 nm and the insulating film width is three times 300 nm (100 nm, 1: 3), and a pattern in which the conductor film width is 100 nm and the insulating film width is the same 100 nm (100 nm, 1: 1) ) Shows the results of four samples side by side.
- SEM scanning electron microscope
- a photograph of a planar structure and a photograph of a cross-sectional structure of each sample are shown on the upper side and the lower side of FIG.
- the W film was not formed on the conductor film, but could be selectively formed on the insulating film. That is, the W film could be reversely grown selectively.
- FIG. 7 shows a transmission electron microscope (TEM) photograph of a cross-sectional structure of a sample having a pattern (100 nm, 1: 3) having a conductor film width of 100 nm and an insulating film width of 300 nm.
- TEM transmission electron microscope
- FIG. 8 shows SEM photographs as a result of forming the W film at various film forming temperatures. From the left, the results of four samples with the film formation temperatures of 150 ° C., 175 ° C., 200 ° C., and 250 ° C. are shown side by side. In the sample having a film formation temperature of 150 ° C., the W film was not formed on the conductor film (Cu film) or the insulating film (SiO film). This is considered to be because at 150 ° C., the heat for reaction between the B-containing layer and WF 6 was insufficient.
- Cu film conductor film
- SiO film the insulating film
- the selective formation of the W film on the insulating film occurs during the incubation time which is the time required for the growth of the W film on the conductor film to start. . That is, it is considered that the W film is selectively formed on the insulating film by growing the W film on the insulating film before the growth of the W film on the conductor film starts.
- the incubation time in the growth of the W film on the conductor film decreases as the film formation temperature increases, it is presumed that the higher the film formation temperature, the lower the selectivity.
- a TiN film was formed as a conductor film, and a W film was formed on the TiN film.
- the supply flow rate of B 2 H 6 gas was set to a value in the range of 30 to 50 sccm, for example, and the supply flow rate of WF 6 gas was set to a value in the range of, for example, 3 to 7 sccm.
- B 2 H 6 gas was diluted with H 2 gas and used.
- the WF 6 gas supply time per cycle was set to 2 seconds, for example.
- the incubation time required to start the growth of the W film on the TiN film was examined by changing the film formation temperature, the film formation pressure, and the B 2 H 6 gas supply time per cycle.
- the incubation time can be expressed in cycle units.
- FIG. 9A is a graph showing the results when the film formation temperatures are 200 ° C. and 250 ° C.
- the film formation pressure is 500 Pa
- the B 2 H 6 gas supply time per cycle is 5 seconds.
- the vertical axis indicates the film thickness in nm units
- the horizontal axis indicates the number of cycles.
- FIG. 9B is a graph showing the results when the film formation pressure is 100 Pa and 500 Pa. Note that, for both samples having a film forming pressure of 100 Pa and 500 Pa, the film forming temperature is 200 ° C., and the B 2 H 6 gas supply time per cycle is 10 seconds.
- the vertical axis indicates the film thickness in nm units, and the horizontal axis indicates the number of cycles.
- the incubation time is 38 cycles, and the film forming rate is 0.21 nm / cycle.
- the incubation time is 17 cycles, and the film forming rate is 0.23 nm / cycle.
- FIG. 9C is a graph showing the results when the B 2 H 6 gas supply time per cycle is 5 seconds and 10 seconds. It should be noted that the film formation temperature is 200 ° C. and the film formation pressure is 500 Pa for both samples with a B 2 H 6 gas supply time of 5 seconds and 10 seconds per cycle.
- the vertical axis indicates the film thickness in nm, and the horizontal axis indicates the number of cycles.
- the incubation time In the sample with a supply time of 5 seconds per cycle of B 2 H 6 gas, the incubation time is 37 cycles, and the film formation rate is 0.23 nm / cycle. In the sample with a supply time of 10 seconds per cycle of B 2 H 6 gas, the incubation time is 17 cycles, and the film formation rate is 0.23 nm / cycle.
- the longer the supply time per cycle of B 2 H 6 gas the shorter the incubation time, that is, the shorter the supply time per cycle of B 2 H 6 gas, the longer the incubation time. all right.
- the growth time of the W film on the TiN film is such that the incubation time becomes longer as the film formation temperature is lower, as described with reference to FIG. This is consistent with the observational facts about the growth of the W film on the Cu film. That is, for the growth of the W film on the conductor film such as the Cu film or the TiN film, it is presumed that the incubation time can be extended by lowering the film formation temperature.
- the incubation time is increased by reducing the film formation pressure or shortening the supply time per cycle of the reducing gas such as B 2 H 6 gas. It can be said that it is possible.
- the film forming temperature is set to a temperature in a reasonably low temperature range.
- the selectivity can be improved by at least one of setting the membrane pressure to a pressure in a moderately low pressure range and setting the supply time per cycle of the reducing gas to a moderately short time range. .
- the film formation temperature (temperature for heating the wafer) is, for example, a temperature in the range of 150 to 300 ° C., preferably 160 to 200 ° C., for example, 175 ° C.
- the film formation temperature is less than 150 ° C., film formation on the insulating film becomes difficult.
- the film formation temperature is higher than 300 ° C., film formation on the conductor film is likely to occur, and it is difficult to increase the selection ratio.
- the film formation temperature is more preferably set to a temperature in the range of 160 ° C. to 200 ° C.
- the film forming pressure (pressure in the processing chamber for accommodating the wafer) is, for example, a pressure in the range of 1 Pa to 1000 Pa, preferably 10 to 500 Pa, for example 50 Pa. If the film forming pressure is less than 1 Pa, it takes a lot of time to set to a predetermined pressure value, and the throughput is lowered. If the film formation pressure exceeds 1000 Pa, the incubation time will be shortened.
- the supply time per cycle of the reducing gas to the wafer is, for example, a time in the range of 1 second to 60 seconds, preferably 10 to 30 seconds, for example, 20 seconds.
- the supply time per cycle of the reducing gas is preferably short, and if the supply time per cycle of the reducing gas exceeds 60 seconds, the incubation time becomes short.
- the supply flow rate of the reducing gas to the wafer is, for example, a flow rate in the range of 1 sccm to 15000 sccm, preferably 6000 to 10000 sccm, for example, 8000 sccm.
- the supply flow rate is less than 1 sccm, the film formation rate is decreased, and thus the throughput is decreased. If the supply flow rate is more than 15000 sccm, the incubation time is shortened.
- the processing conditions in the reducing gas supply step that is, the temperature at which the wafer is heated, the pressure in the processing chamber containing the wafer, the wafer It is possible to select at least one of the supply flow rate of the reducing gas to the substrate and the supply time (per cycle) of the reducing gas to the wafer as an appropriate condition.
- the incubation time when the W film is grown is not limited to Cu and TiN, but also exists for other various metal materials such as Al, Ti, Ta, TaN and the like. For this reason, when the W film is selectively formed on the insulating surface, various metal materials can be used as the material constituting the conductive surface in the region where the W film is not formed.
- the constituent material of the conductive surface is, for example, of copper (Cu), aluminum (Al), titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN). It is preferable that any one is included).
- a reducing gas is supplied onto the insulating surface and the conductive surface of the wafer in the initial state.
- the B-containing layer which is a layer formed by supplying the reducing gas, is more easily formed on the insulating surface than the conductive surface, that is, selectively formed on the insulating surface. Therefore, the W film is likely to be formed on the insulating surface compared to the conductive surface, that is, the W film may be selectively formed on the insulating surface. Guessed.
- B 2 H 6 is a molecule obtained by dimerizing borane (BH 3 ) that does not satisfy the octet rule in an attempt to stabilize it.
- the insulating film 600 of the wafer 200 is made of, for example, SiO, and O atoms contained in the SiO have unshared electron pairs.
- An atomic group containing B and H (for example, BH 3 as one possibility) is more stable by coordinating with an O atom contained in SiO constituting the insulating surface and satisfying the octet rule. It is thought that it becomes possible to exist. For this reason, it is presumed that the B-containing layer is likely to be selectively formed on the insulating surface.
- an insulating film formed of an insulating material containing an element having an unshared electron pair, for example, O or N is preferable as the base on which the B-containing layer is easily formed selectively.
- examples thereof include a nitride film (SiN film), a silicon oxynitride film (SiON film), and the like (constituent materials for the insulating surface include, for example, silicon oxide (SiO), silicon nitride (SiN), and silicon oxynitride (It is preferable to include any of (SiON)).
- SiN film silicon oxide
- SiN silicon nitride
- It silicon oxynitride
- C may be contained in these films.
- a silicon oxycarbide film SiOC film
- SiCN film silicon carbonitride film
- SiOCN film silicon oxycarbonitride film
- SiOC film, the SiCN film, and the SiOCN film can be referred to as an SiO film as an SiO film containing C, an SiN film as an SiN film containing C, and an SiON film as an SiON film containing C. It can also be called.
- a composite film of these films can also be used.
- (Appendix 1) According to one aspect of the invention, Supplying a reducing gas to a substrate having an insulating surface and a conductive surface; Supplying a metal-containing gas to the substrate; A method for manufacturing a semiconductor device or a substrate processing method for selectively forming a metal film on the insulating surface by performing a predetermined number of cycles (asynchronous, intermittent, pulsed) in a time-sharing manner. Provided.
- Appendix 2 The method according to appendix 1, preferably, The insulating surface includes an element having an unshared electron pair.
- the reducing gas is a boron (B) -containing gas (borane).
- the conductive surface includes any one of copper (Cu), aluminum (Al), titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN).
- the metal-containing gas is a tungsten (W) -containing gas
- the metal film is a tungsten (W) film.
- Appendix 7 The method according to any one of appendices 1 to 6, preferably, A processing condition in the step of supplying the reducing gas is selected according to a selection ratio when the metal film is selectively formed on the insulating surface.
- the processing condition is at least one of a temperature for heating the substrate, a pressure in a processing chamber for storing the substrate, a supply flow rate of the reducing gas to the substrate, and a supply time of the reducing gas to the substrate. It is.
- the pressure in the processing chamber for accommodating the substrate is a pressure within the range of 1 Pa to 1000 Pa, preferably 10 to 500 Pa, and more preferably 50 Pa.
- the supply flow rate of the reducing gas is a flow rate in the range of 1 sccm to 15000 sccm, preferably 6000 to 10,000 sccm, and more preferably 8000 sccm.
- appendix 13 The method according to any one of appendices 1 to 12, preferably: The predetermined number of times of performing the cycle is selected to be less than an incubation time which is a time required for the growth of the metal film to start on the conductive surface.
- a processing chamber for accommodating the substrate;
- a gas supply system for supplying a reducing gas and a metal-containing gas to the substrate;
- the metal film is selectively formed on the insulating surface by performing a predetermined number of cycles in which the gas supply process and the gas supply process are time-divided (asynchronously, intermittently, and pulsed).
- a control unit A substrate processing apparatus is provided.
- Controller control unit 200 wafer (substrate) 201 Processing chamber 202 Processing furnace 310, 320 Gas supply pipe 410, 420 Nozzle
Abstract
Description
絶縁性の表面と導電性の表面とを有する基板に対して、還元ガスを供給する工程と、
前記基板に対して、金属含有ガスを供給する工程と、
を時分割して行うサイクルを所定回数行うことで、前記絶縁性の表面上に金属膜を選択的に形成する半導体装置の製造方法が提供される。
以下、本発明の一実施形態について図1および図2を用いて説明する。基板処理装置10は、半導体装置(デバイス)の製造工程の一工程である基板処理工程において使用される装置の一例として構成されている。
処理炉202には加熱手段(加熱機構、加熱系)としてのヒータ207が設けられている。ヒータ207は上方が閉塞された円筒形状に形成されている。
半導体装置(デバイス)の製造工程の一工程として、基板上に金属膜を形成する工程の一例について図4(a)および図4(b)を用いて説明する。金属膜を形成する工程は、上述した基板処理装置10の処理炉202を用いて実行される。以下の説明において、基板処理装置10を構成する各部の動作はコントローラ121により制御される。
複数枚のウエハ200がボート217に装填(ウエハチャージ)されると、図1に示されているように、複数枚のウエハ200を支持したボート217は、ボートエレベータ115によって持ち上げられて処理室201内に搬入(ボートロード)される。この状態で、シールキャップ219はOリング220を介してマニホールド209の下端開口を閉塞した状態となる。
処理室201内が所望の圧力(真空度)となるように真空ポンプ246によって真空排気される。この際、処理室201内の圧力は、圧力センサ245で測定され、この測定された圧力情報に基づき、APCバルブ243がフィードバック制御される(圧力調整)。真空ポンプ246は、少なくともウエハ200に対する処理が完了するまでの間は常時作動させた状態を維持する。また、処理室201内のウエハ200が所望の温度となるようにヒータ207によって加熱される。この際、処理室201内が所望の温度分布となるように、温度センサ263が検出した温度情報に基づきヒータ207への通電量がフィードバック制御される(温度調整)。なお、ヒータ207による処理室201内の加熱は、少なくともウエハ200に対する処理が完了するまでの間は継続して行われる。続いて、回転機構267によりボート217およびウエハ200の回転を開始する。なお、回転機構267によるボート217およびウエハ200の回転は、少なくとも、ウエハ200に対する処理が完了するまでの間は継続して行われる。
続いて、ウエハ200上にW膜を形成する工程を実行する。W膜形成工程は、以下に説明するB2H6ガス(還元ガス)供給ステップ、残留ガス除去ステップ、WF6ガス(金属含有ガス)供給ステップ、残留ガス除去ステップを含む。
バルブ324を開き、ガス供給管320内にB2H6ガスを流す。ガス供給管320内を流れたB2H6ガスは、MFC322により流量調整されてノズル420のガス供給孔420aから処理室201内に供給され、排気管231から排気される。このとき、ウエハ200に対してB2H6ガスが供給されることとなる。すなわちウエハ200の表面はB2H6ガスに暴露されることとなる。このとき同時にバルブ524を開き、キャリアガス供給管520内にN2ガスを流す。キャリアガス供給管520内を流れたN2ガスは、MFC522により流量調整されてB2H6ガスと一緒に処理室201内に供給され、排気管231から排気される。このとき、ノズル410内へのB2H6ガスの侵入を防止するために、バルブ514を開き、キャリアガス供給管510内にN2ガスを流す。N2ガスは、ガス供給管310,ノズル410を介して処理室201内に供給され、排気管231から排気される。
B含有層が形成された後、バルブ324を閉じ、B2H6ガスの供給を停止する。このとき、APCバルブ243は開いたままとして、真空ポンプ246により処理室201内を真空排気し、処理室201内に残留する未反応もしくはB含有層の形成に寄与した後のB2H6ガスを処理室201内から排除する。すなわち、B含有層が形成されたウエハ200が存在する空間に残留する未反応もしくはB含有層の形成に寄与した後のB2H6ガスを除去する。このときバルブ514,524は開いたままとして、N2ガスの処理室201内への供給を維持する。N2ガスはパージガスとして作用し、処理室201内に残留する未反応もしくはB含有層の形成に寄与した後のB2H6ガスを処理室201内から排除する効果を高めることができる。
バルブ314を開き、ガス供給管310内にWF6ガスを流す。ガス供給管310内を流れたWF6ガスは、MFC312により流量調整されてノズル410のガス供給孔410aから処理室201内に供給され、排気管231から排気される。このとき、ウエハ200に対してWF6ガスが供給されることとなる。すなわちウエハ200の表面はWF6ガスに暴露されることとなる。このとき同時にバルブ514を開き、キャリアガス供給管510内にN2ガスを流す。キャリアガス供給管510内を流れたN2ガスは、MFC512により流量調整されてWF6ガスと一緒に処理室201内に供給され、排気管231から排気される。このとき、ノズル420内へのWF6ガスの侵入を防止するために、バルブ524を開き、キャリアガス供給管520内にN2ガスを流す。N2ガスは、ガス供給管320,ノズル420を介して処理室201内に供給され、排気管231から排気される。
W層が形成された後、バルブ314を閉じ、WF6ガスの供給を停止する。このとき、APCバルブ243は開いたままとして、真空ポンプ246により処理室201内を真空排気し、処理室201内に残留する未反応もしくはW層の形成に寄与した後のWF6ガスを処理室201内から排除する。すなわち、W層が形成されたウエハ200が存在する空間に残留する未反応もしくはW層の形成に寄与した後のWF6ガスを除去する。このときバルブ514,524は開いたままとして、N2ガスの処理室201内への供給を維持する。N2ガスはパージガスとして作用し、処理室201内に残留する未反応もしくはW層の形成に寄与した後のWF6ガスを処理室201内から排除する効果を高めることができる。このとき、W層形成に伴い処理室201内に副生成物が生じていた場合、この副生成物も処理室201内から排除される。
上述したB2H6ガス供給ステップ、残留ガス除去ステップ、WF6ガス供給ステップ、残留ガス除去ステップを順に時分割して(非同期、間欠的、パルス的に)行うサイクルを1回以上(所定回数)行うことにより、ウエハ200上に、所定の厚さのW膜を形成することができる。上述のサイクルは、複数回繰り返すのが好ましい。このようなサイクルを所定回数行うことで、ウエハ200の絶縁膜600上に選択的に(優先的に)W膜を形成することができる。つまり、ウエハ200の絶縁性の表面601上に直接、W膜を選択的に形成することができる。
続いて、ウエハ200上に形成されたW膜を熱処理する。ここでは、ウエハ200の温度が600℃以上、例えば800~850℃の温度となるように、ヒータ207への通電量を調整し、W膜を熱処理(アニール処理)する。アニール処理は、例えばN2ガス等の不活性ガス雰囲気下で行う。このアニール処理の処理時間は、例えば1~120秒間の範囲内の所定の時間とする。アニール処理を行うことにより、ウエハ200表面の下地膜上に形成されたW膜の結晶状態を、所望の結晶状態とすることができ、また、この結晶状態を安定化させることができる。また、W膜中に残留する不純物を脱離させることもできる。すなわち、アニール処理により、W膜を改質することができる。また、アニール処理により、W膜を緻密化させることもできる。
ウエハ200に対するアニール処理が終了したら、バルブ514,524を開いたままで、ガス供給管510,520のそれぞれからN2ガスを処理室201内へ供給し、排気管231から排気する。N2ガスはパージガスとして作用し、これにより処理室201内が不活性ガスでパージされ、処理室201内に残留するガスや副生成物が処理室201内から除去される(パージ)。その後、処理室201内の雰囲気が不活性ガスに置換され(不活性ガス置換)、処理室201内の圧力が常圧に復帰される(大気圧復帰)。
ボートエレベータ115によりシールキャップ219が下降されて、マニホールド209の下端が開口される。そして、処理済ウエハ200がボート217に支持された状態でマニホールド209の下端から処理室201の外部に搬出(ボートアンロード)される。処理済のウエハ200は、ボート217より取り出される(ウエハディスチャージ)。
本実施形態によれば、以下に示す1つまたは複数の効果が得られる。
本発明は上述の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能である。後述の実施例での考察等に基づいて、例えば以下のような実施形態とすることもできる。なお、以下の他の実施形態における処理条件は、例えば、上述の実施形態と同様な処理条件とすることができる。なお、必要に応じて、他の処理条件としてもよい。
本発明の一態様によれば、
絶縁性の表面と導電性の表面とを有する基板に対して、還元ガスを供給する工程と、
前記基板に対して、金属含有ガスを供給する工程と、
を時分割して(非同期、間欠的、パルス的に)行うサイクルを所定回数行うことで、前記絶縁性の表面上に金属膜を選択的に形成する半導体装置の製造方法、または基板処理方法が提供される。
付記1に記載の方法であって、好ましくは、
前記絶縁性の表面は、非共有電子対を有する元素を含む。
付記1または2に記載の方法であって、好ましくは、
前記絶縁性の表面は、シリコン酸化物(SiO)、シリコン窒化物(SiN)、およびシリコン酸窒化物(SiON)のうちのいずれかを含む。
付記1~3のいずれかに記載の方法であって、好ましくは、
前記還元ガスは、ホウ素(B)含有ガス(ボラン)である。
付記1~4のいずれかに記載の方法であって、好ましくは、
前記導電性の表面は、銅(Cu)、アルミニウム(Al)、チタン(Ti)、チタン窒化物(TiN)、タンタル(Ta)、およびタンタル窒化物(TaN)のうちのいずれかを含む。
付記1~5のいずれかに記載の方法であって、好ましくは、
前記金属含有ガスは、タングステン(W)含有ガスであって、前記金属膜は、タングステン(W)膜である。
付記1~6のいずれかに記載の方法であって、好ましくは、
前記金属膜を前記絶縁性の表面上に選択的に形成する際の選択比に応じて、前記還元ガスを供給する工程における処理条件を選択する。
付記7に記載の方法であって、好ましくは、
前記処理条件とは、前記基板を加熱する温度、前記基板を収容する処理室内の圧力、前記基板に対する前記還元ガスの供給流量、および、前記基板に対する前記還元ガスの供給時間のうちの少なくとも一つである。
付記8に記載の方法であって、好ましくは、
前記基板を加熱する温度は、150~300℃の範囲内の温度であって、好ましくは160~200℃であり、より好適には175℃である。
付記8もしくは9に記載の方法であって、好ましくは、
前記基板を収容する処理室内の圧力は、1Pa~1000Paの範囲内の圧力であって、好ましくは10~500Paであり、より好適には50Paである。
付記8~10のいずれかに記載の方法であって、好ましくは、
前記還元ガスの供給流量は、1sccm~15000sccmの範囲内の流量であって、好ましくは6000~10000sccmであり、より好適には8000sccmである。
付記8~11のいずれかに記載の方法であって、好ましくは、
前記還元ガスの供給時間は、1秒~60秒の範囲内の時間であって、好ましくは10~30秒であり、より好適には20秒である。
付記1~12のいずれかに記載の方法であって、好ましくは、
前記サイクルを行う前記所定回数を、前記導電性の表面上において前記金属膜の成長が開始するまでに要する時間であるインキュベーションタイム未満となるように選択する。
本発明の他の態様によれば、
基板を収容する処理室と、
前記基板に対して、還元ガスと金属含有ガスとを供給するガス供給系と、
前記ガス供給系を制御して、前記処理室に収容された絶縁性の表面および導電性の表面を有する基板に対して、前記還元ガスを供給する処理と、前記基板に対して、前記金属含有ガスを供給する処理と、を時分割して(非同期、間欠的、パルス的に)行うサイクルを所定回数行うことで、前記絶縁性の表面上に金属膜を選択的に形成するよう構成される制御部と、
を有する基板処理装置が提供される。
本発明のさらに他の態様によれば、
処理室に収容された絶縁性の表面と導電性の表面とを有する基板に対して、還元ガスを供給する手順と、
前記基板に対して、金属含有ガスを供給する手順と、
を時分割して(非同期、間欠的、パルス的に)行うサイクルを所定回数行うことで、前記絶縁性の表面上に金属膜を選択的に形成する手順を行うプログラム、または該プログラムを記録したコンピュータ読み取り可能な記録媒体が提供される。
200 ウエハ(基板)
201 処理室
202 処理炉
310,320 ガス供給管
410,420 ノズル
Claims (15)
- 絶縁性の表面と導電性の表面とを有する基板に対して、還元ガスを供給する工程と、
前記基板に対して、金属含有ガスを供給する工程と、
を時分割して行うサイクルを所定回数行うことで、前記絶縁性の表面上に金属膜を選択的に形成する半導体装置の製造方法。 - 前記絶縁性の表面は、非共有電子対を有する元素を含む請求項1に記載の半導体装置の製造方法。
- 前記絶縁性の表面は、シリコン酸化物、シリコン窒化物、およびシリコン酸窒化物のうちのいずれかを含む請求項1に記載の半導体装置の製造方法。
- 前記還元ガスは、ホウ素含有ガスである請求項1に記載の半導体装置の製造方法。
- 前記導電性の表面は、銅、アルミニウム、チタン、チタン窒化物、タンタル、およびタンタル窒化物のうちのいずれかを含む請求項1に記載の半導体装置の製造方法。
- 前記金属含有ガスは、タングステン含有ガスであって、前記金属膜は、タングステン膜である請求項1に記載の半導体装置の製造方法。
- 前記金属膜を前記絶縁性の表面上に選択的に形成する際の選択比に応じて、前記還元ガスを供給する工程における処理条件を選択する請求項1に記載の半導体装置の製造方法。
- 前記処理条件とは、前記基板を加熱する温度、前記基板を収容する処理室内の圧力、前記基板に対する前記還元ガスの供給流量、および、前記基板に対する前記還元ガスの供給時間のうちの少なくとも一つである請求項7に記載の半導体装置の製造方法。
- 前記基板を加熱する温度は、150~300℃の範囲内の温度である請求項8に記載の半導体装置の製造方法。
- 前記基板を収容する処理室内の圧力は、1~1000Paの範囲内の圧力である請求項9に記載の半導体装置の製造方法。
- 前記還元ガスの供給流量は、1sccm~15000sccmの範囲内の流量である請求項10に記載の半導体装置の製造方法。
- 前記還元ガスの供給時間は、1秒~60秒の範囲内の時間である請求項11に記載の半導体装置の製造方法。
- 前記サイクルを行う前記所定回数を、前記導電性の表面上において前記金属膜の成長が開始するまでに要する時間であるインキュベーションタイム未満となるように選択する請求項1に記載の半導体装置の製造方法。
- 基板を収容する処理室と、
前記基板に対して、還元ガスと金属含有ガスとを供給するガス供給系と、
前記ガス供給系を制御して、前記処理室に収容された絶縁性の表面および導電性の表面を有する基板に対して、前記還元ガスを供給する処理と、前記基板に対して、前記金属含有ガスを供給する処理と、を時分割して行うサイクルを所定回数行うことで、前記絶縁性の表面上に金属膜を選択的に形成するよう構成される制御部と、
を有する基板処理装置。 - 処理室に収容された絶縁性の表面と導電性の表面とを有する基板に対して、還元ガスを供給する手順と、
前記基板に対して、金属含有ガスを供給する手順と、
を時分割して行うサイクルを所定回数行うことで、前記絶縁性の表面上に金属膜を選択的に形成する手順を行うプログラムを記録したコンピュータ読み取り可能な記録媒体。
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- 2015-01-26 US US15/546,136 patent/US10276393B2/en active Active
- 2015-01-26 JP JP2016571510A patent/JP6253214B2/ja active Active
- 2015-01-26 WO PCT/JP2015/051965 patent/WO2016120957A1/ja active Application Filing
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US20180130664A1 (en) | 2018-05-10 |
US10276393B2 (en) | 2019-04-30 |
JP6253214B2 (ja) | 2017-12-27 |
JPWO2016120957A1 (ja) | 2017-08-10 |
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