JP2013079447A - 金属/金属窒化物基板上に貴金属を選択的に堆積させるための方法 - Google Patents
金属/金属窒化物基板上に貴金属を選択的に堆積させるための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 61
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- 239000012159 carrier gas Substances 0.000 claims abstract description 12
- 238000010926 purge Methods 0.000 claims abstract description 11
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- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 6
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 6
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 39
- 239000000203 mixture Substances 0.000 claims description 24
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 3
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 3
- -1 ethylcyclopentadienyl Chemical group 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 2
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- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
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- 239000010949 copper Substances 0.000 description 11
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 6
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- 241000894007 species Species 0.000 description 3
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 3
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- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108700021154 Metallothionein 3 Proteins 0.000 description 1
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- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- 238000003949 trap density measurement Methods 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】プラズマ増強原子層堆積チャンバ内に基板を準備し、基板は、露出した第1材料を有する第1領域と、露出した第2材料を有する第2領域とを含み、第1材料は金属窒化物又は窒化可能な金属を含み、第2材料は窒化不可能な金属又はシリコン酸化物を含むようにし、(a)第1ステップとして貴金属前駆体をチャンバに供給して、貴金属前駆体をキャリアガスの存在下で基板に接触させ、続いて貴金属前駆体をパージするステップ、アンモニア及びキャリアガスをチャンバに供給しつつ基板をプラズマに曝露するステップを繰り返し実施することにより、第1領域でなく第2領域上で貴金属層を選択的に堆積させ、次に(b)基板をアンモニア及びキャリアガスプラズマに曝露するステップと、貴金属前駆体を基板に接触させるステップで非選択的に堆積させる。
【選択図】図1
Description
Ruベースの基板(Ruシード又はRuTa)上で、Ru成長は、N2/NH3プラズマを使用したPE−ALDについての線形挙動を示す。図2(a)に示すように、著しい成長は認められなかった。
上記の実験でN2/NH3プラズマをN2/H2プラズマと置き換えた場合、異なる結果が得られる。図3(a)に示すように、TiN基板上でRu堆積を得ることができる。SiO2基板上でプラズマの影響を比較すると(図3(b))、TiN上と同様の傾向が認められた。N2/NH3プラズマと比較して、SiO2基板上でのN2/H2プラズマは、より短いインキュベーション時間につながる。しかし、SiO2上でのインキュベーション時間の差はTiN基板上よりも短く、それは、Ru(又は任意の他の貴金属)のALD成長中に使用するプラズマ選択のインキュベーション時間への影響を示している。
N2/NH3及びN2/H2からプラズマ組成を切り替える場合、Ruのサイクル当たりの成長の値において差は見いだされてこなかった。図5(a)に示したように、N2/NH3プラズマ(RuTa/TiN上での)及びN2/H2プラズマ(TiN上での)の両方の場合で、約0.016nmのGPCが見いだされた。より多くの前駆体量、より長いプラズマ照射、又はより大きいプラズマ出力(データは図示せず)は、GPC又は抵抗に大きい影響を与えなかった。これは、プロセスが飽和していることを示唆している。GPCに影響を与えたパラメータは、反応器の温度だけであった。温度を約400℃まで上昇させるのに伴って、約0.025nmまでのGPCの増加が見いだされた。上記のように、N2プラズマ(TiN上での)の場合に、より小さいGPCが見いだされたことに留意されたい。
Claims (17)
- プラズマ増強原子層堆積PE−ALDによって貴金属層を形成するための方法であって、
PE−ALDチャンバ内に基板を準備する工程であって、基板は、露出した第1材料を有する第1領域と露出した第2材料を有する第2領域とを含み、第1材料は金属窒化物又は窒化可能な金属を含み、第2材料は窒化不可能な金属又はシリコン酸化物を含むようにした工程と、
第2領域への貴金属層のPE−ALDによる選択的堆積を、
(a)貴金属前駆体をPE−ALDチャンバに供給して、該貴金属前駆体をキャリアガスの存在下で基板と接触させ、続いて貴金属前駆体をパージするステップと、
(b)アンモニア及びキャリアガスをPE−ALDチャンバに供給しつつ、PE−ALDチャンバ内で基板をプラズマに曝露するステップとを含む堆積サイクルを繰り返し実施することによって行う工程と、を含む方法。 - 第1ステップとして、ステップ(a)を用いて堆積サイクルを実施する、請求項1に記載の方法。
- 第1ステップとして、ステップ(b)を用いて堆積サイクルを実施する、請求項1に記載の方法。
- 選択的堆積を行う工程の後、
第2領域及び第1領域上への貴金属層のPE−ALDによる非選択的堆積を、堆積サイクルを繰り返し実施することによって行う工程であって、ステップ(b)ではアンモニアを水素(H2)で置き換えた工程をさらに含む、請求項1〜3のいずれか1項に記載の方法。 - 基板をチャンバ内で保持した状態で、同じPE−ALDチャンバ内での選択的堆積の後に非選択的堆積を実施する、請求項4に記載の方法。
- 貴金属層の非選択的堆積の前に、基板の追加のプラズマ処理を実施する工程をさらに含む、請求項4又は5に記載の方法。
- 追加のプラズマ処理は、N2、H2若しくはH2/H2プラズマ又はAr若しくはHeのような不活性ガスのプラズマである、請求項6に記載の方法。
- キャリアガスは、N2、又はN2とAr若しくはHeのような不活性ガスとの混合物である、請求項1〜7のいずれか1項に記載の方法。
- 窒化不可能な金属は、貴金属又は11属に属する遷移金属を含む、請求項1〜8のいずれか1項に記載の方法。
- 11属に属する遷移金属は、Cu、Ag及びAuからなる群から選択された、請求項9に記載の方法。
- 貴金属は、Ru、Rh、Pd、Os、Ir又はPtを含むことを特徴とする、請求項1〜10のいずれか1項に記載の方法。
- 貴金属は、Ru又はRuTaの合金である、請求項11に記載の方法。
- 金属窒化物は、TiN、TaN又はWNを含むことを特徴とする、請求項1〜12のいずれか1項に記載の方法。
- 金属窒化物は、さらに炭素及び/又は酸素を含むことを特徴とする、請求項1〜13のいずれか1項に記載の方法。
- 窒化可能な金属は、Ti、Ta、W、Al及びいずれかの混合物又はその合金からなる群から選択された、請求項1〜14のいずれか1項に記載の方法。
- 堆積サイクル中に、キャリアガスとアンモニア又は水素のうちの1つとをPE−ALDチャンバに連続的に供給することができることを特徴とする、請求項4〜15のいずれか1項に記載の方法。
- 貴金属前駆体は、1つ以上のアルキル置換基を有するビス(エチルシクロペンタジエニル)Me及びビス(シクロペンタジエニル)Meからなる群から選択されたことを特徴とする、請求項1〜16のいずれか1項に記載の方法。
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US201161542876P | 2011-10-04 | 2011-10-04 | |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016120957A1 (ja) * | 2015-01-26 | 2016-08-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置および記録媒体 |
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