JP2018041898A - 成膜方法および成膜システム - Google Patents
成膜方法および成膜システム Download PDFInfo
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- JP2018041898A JP2018041898A JP2016176421A JP2016176421A JP2018041898A JP 2018041898 A JP2018041898 A JP 2018041898A JP 2016176421 A JP2016176421 A JP 2016176421A JP 2016176421 A JP2016176421 A JP 2016176421A JP 2018041898 A JP2018041898 A JP 2018041898A
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- 238000000034 method Methods 0.000 title claims abstract description 74
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 103
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 40
- 239000010941 cobalt Substances 0.000 claims abstract description 40
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000007246 mechanism Effects 0.000 claims description 73
- 150000002902 organometallic compounds Chemical class 0.000 claims description 18
- 238000003860 storage Methods 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 7
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 218
- 150000002736 metal compounds Chemical class 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 96
- 239000012159 carrier gas Substances 0.000 description 22
- 238000010926 purge Methods 0.000 description 21
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 238000001816 cooling Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000032258 transport Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Abstract
Description
最初に、成膜方法の一実施形態について、図1のフローチャートおよび図2の工程断面図を参照して説明する。
次に、本発明の成膜方法を実施することができる成膜システムの例について説明する。
図5は、本発明の成膜方法を実施することができる成膜システムの第1の例を示す概略図である。
図6は成膜装置103を示す断面図である。成膜装置103は、図6に示すように、密閉構造のチャンバー121と、チャンバー121の内部に設けられた、ウエハWを略水平にした状態で載置する載置台122と、載置台122に対向して設けられたシャワーヘッド130と、シャワーヘッド120に成膜用のガスを供給するガス供給機構140と、排気機構150とを有している。
図7はエッチング装置104を示す断面図である。
成膜装置104は、図7に示すように、密閉構造のチャンバー221と、チャンバー221の内部に設けられた、ウエハWを略水平にした状態で載置する載置台222と、載置台222に対向して設けられたシャワーヘッド230と、シャワーヘッド230に成膜用のガスを供給するガス供給機構240と、排気機構250とを有している。
図8は、本発明の成膜方法を実施することができる成膜システムの第2の例を示す概略図である。
図9は成膜・エッチング装置302を示す断面図である。成膜・エッチング装置302は、第1の例の成膜装置103と同様の構成のチャンバー121に、成膜装置103と同様の成膜ガスを供給するガス供給機構140と、エッチング装置104と同様のエッチングガスを供給するガス供給機構240とを取り付け、チャンバー121に成膜ガスとエッチングガスの両方を供給可能としたものである。
次に、本発明の実験例について説明する。
本発明の成膜→エッチング→成膜のシーケンスでCo膜によりビアホール内を埋め込んだ際の効果を確認した。
成膜
圧力:5〜20Torr、還元ガス:NH3(50〜500sccm)
エッチング
圧力:5〜100Torr
以上、本発明の実施形態について説明したが、本発明は、上記実施形態に限定されることはなく、その要旨を逸脱しない範囲で種々変形可能である。
2;ビアホール
4a,4b,4c;Co膜
100,300;成膜システム
101,301;真空搬送室
103;成膜装置
104;エッチング装置
121,221;チャンバー
122,222;載置台
140;ガス供給機構(成膜ガス供給機構)
240;ガス供給機構(エッチングガス供給機構)
302;成膜・エッチング装置
W;半導体ウエハ
Claims (15)
- 凹部が形成された表面を有する被処理基板上にコバルト膜を成膜し、前記凹部を前記コバルト膜により埋め込む成膜方法であって、
被処理基板上に有機金属化合物を用いたCVD法またはALD法によりコバルト膜を成膜し、前記凹部内を部分的に埋め込む第1工程と、
前記被処理基板にβ−ジケトンガスと一酸化窒素ガスとを含むエッチングガスを供給し、前記コバルト膜を部分的にエッチングする第2工程と、
前記被処理基板上に、再び有機金属化合物を用いたCVD法またはALD法によりコバルト膜を成膜し、前記ビアホール内をさらに埋め込む第3工程と
を有することを特徴とする成膜方法。 - 前記第2工程と前記第3工程とを2回以上繰り返すことを特徴とする請求項1に記載の成膜方法。
- 前記第1工程および前記第3工程は、前記有機金属化合物としてコバルトアミジネートを用い、さらに還元ガスを用いてコバルト膜の成膜を行うことを特徴とする請求項1または請求項2に記載の成膜方法。
- 前記第1工程および前記第3工程は、被処理基板を300℃以下に加熱しつつ行うことを特徴とする請求項3に記載の成膜方法。
- 前記第2工程は、β−ジケトンとして、分子中のカルボニル基にハロゲン原子を含むアルキル基が結合したものを用いることを特徴とする請求項1から請求項4のいずれか1項に記載の成膜方法。
- 前記β−ジケトンはヘキサフルオロアセチルアセトンを含むことを特徴とする請求項5に記載の成膜方法。
- NOガス流量/β−ジケトンガス流量で表される、NOガスとβ−ジケトンガスの流量比が、0.02〜0.5の範囲であることを特徴とする請求項1から請求項6のいずれか1項に記載の成膜方法。
- NOガス流量/β−ジケトンガス流量で表される、NOガスとβ−ジケトンガスの流量比が、0.12〜0.5の範囲であることを特徴とする請求項7に記載の成膜方法。
- 前記第2工程は、被処理基板を200〜250℃の範囲に加熱しつつ行われることを特徴とする請求項1から請求項8のいずれか1項に記載の成膜方法。
- 前記第2工程は、被処理基板を220〜240℃の範囲に加熱しつつ行われることを特徴とする請求項9に記載の成膜方法。
- 前記第1工程および第3工程を第1のチャンバーで行い、前記第2工程を前記第1のチャンバーとは異なる第2のチャンバーで行い、前記第1工程から前記第3工程までを真空中で行うとともに、前記第1のチャンバーおよび前記第2のチャンバー間の被処理基板の搬送を真空中で行うことを特徴とする請求項1から請求項10のいずれか1項に記載の成膜方法。
- 前記第1工程から前記第3工程を同一のチャンバーで行うことを特徴とする請求項1から請求項10のいずれか1項に記載の成膜方法。
- 請求項1から請求項12のいずれか1項の成膜方法を行う成膜システムであって、
前記第1工程と前記第3工程を実施する成膜装置と、
前記第2の工程を実施するエッチング装置と、
前記成膜装置と前記エッチング装置が接続され、前記成膜装置と前記エッチング装置との間で被処理基板の搬送を行う搬送機構を有する真空搬送室と
を有することを特徴とする成膜システム。 - 請求項1から請求項12のいずれか1項の成膜方法を行う成膜システムであって、
1つのチャンバーと、前記チャンバー内に前記第1工程と前記第3工程の成膜処理を行う成膜用のガスを供給する成膜ガス供給機構と、前記チャンバー内に前記第2工程のエッチング処理を行うエッチング用のガスを供給するエッチングガス供給機構とを有する成膜・エッチング装置を有することを特徴とする成膜システム。 - コンピュータ上で動作し、成膜システムを制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項12のいずれかの成膜方法が行われるように、コンピュータに前記成膜システムを制御させることを特徴とする記憶媒体。
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