JP5225957B2 - 成膜方法および記憶媒体 - Google Patents
成膜方法および記憶媒体 Download PDFInfo
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- JP5225957B2 JP5225957B2 JP2009215414A JP2009215414A JP5225957B2 JP 5225957 B2 JP5225957 B2 JP 5225957B2 JP 2009215414 A JP2009215414 A JP 2009215414A JP 2009215414 A JP2009215414 A JP 2009215414A JP 5225957 B2 JP5225957 B2 JP 5225957B2
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- 238000000034 method Methods 0.000 title claims description 55
- 230000015572 biosynthetic process Effects 0.000 title claims description 26
- 238000003860 storage Methods 0.000 title claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 81
- 239000003638 chemical reducing agent Substances 0.000 claims description 46
- 150000001735 carboxylic acids Chemical class 0.000 claims description 41
- 239000002994 raw material Substances 0.000 claims description 40
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 36
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 33
- 239000007789 gas Substances 0.000 claims description 31
- 229910017052 cobalt Inorganic materials 0.000 claims description 26
- 239000010941 cobalt Substances 0.000 claims description 26
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 26
- 229910052759 nickel Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 235000019253 formic acid Nutrition 0.000 claims description 19
- 238000010926 purge Methods 0.000 claims description 17
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical group COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims description 3
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 description 31
- 230000008569 process Effects 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
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Description
同様に、成膜原料としてニッケルアミジネートを用いて、低温でかつ表面状態および膜質の良好なNi膜を成膜することができる成膜方法を提供することを目的とする。
また、そのような成膜方法を実行するためのプログラムを記憶した記憶媒体を提供することを目的とする。
図1は、本発明の成膜方法を実施する成膜装置の構成の一例を示す略断面である。
この成膜装置100は、気密に構成された略円筒状のチャンバー1を有しており、その中には被処理基板である半導体ウエハWを水平に支持するためのサセプタ2がその中央下部に設けられた円筒状の支持部材3により支持された状態で配置されている。このサセプタ2はAlN等のセラミックスからなっている。また、サセプタ2にはヒーター5が埋め込まれており、このヒーター5にはヒーター電源6が接続されている。一方、サセプタ2の上面近傍には熱電対7が設けられており、熱電対7の信号はヒーターコントローラ8に伝送されるようになっている。そして、ヒーターコントローラ8は熱電対7の信号に応じてヒーター電源6に指令を送信し、ヒーター5の加熱を制御してウエハWを所定の温度に制御するようになっている。なお、サセプタ2には3本のウエハ昇降ピン(図示せず)がサセプタ2の表面に対して突没可能に設けられており、ウエハWを搬送する際に、サセプタ2の表面から突出した状態にされる。
次に、以上のように構成された成膜装置を用いて行われる本発明の成膜方法をCo膜の成膜に適用した実施形態について説明する。
次に、上記成膜装置を用いて行われる本発明の成膜方法をNi膜の成膜に適用した実施形態について説明する。
なお、本発明は、上記実施の形態に限定されることなく種々変形可能である。例えば、上記実施の形態においては、成膜原料を構成するコバルトアミジネートとして、Co(tBu−Et−Et−amd)2を例示し、ニッケルアミジネートとしてNi(tBu−amd)2を例示したが、これに限るものではない。また、還元剤を構成するカルボン酸としても、蟻酸および酢酸に限らず、プロピオン酸、酪酸、吉草酸等、他のカルボン酸を用いることもできる。
2;サセプタ
5;ヒーター
10;シャワーヘッド
23;排気装置
30;ガス供給機構
31;成膜原料タンク
46;カルボン酸供給源
50;制御部
51;プロセスコントローラ
53;記憶部(記憶媒体)
W;半導体ウエハ
Claims (11)
- 処理容器内に基板を収容し、前記処理容器内にコバルトアミジネートを含む成膜原料とカルボン酸を含む還元剤とを気相状態で導入し、前記還元剤を構成するカルボン酸を蟻酸または酢酸とし、成膜の際の基板温度を120〜250℃として、基板上にCo膜を成膜することを特徴とする成膜方法。
- 前記成膜原料を構成するコバルトアミジネートは、ビス(N−ターシャリブチル−N′−エチル−プロピオンアミジネート)コバルト(II)であることを特徴とする請求項1に記載の成膜方法。
- 基板上にCo膜を成膜した後、電解メッキによるCuを堆積させることを特徴とする請求項1または請求項2に記載の成膜方法。
- 基板上にCo膜を成膜した後、CVDによりCuを堆積させることを特徴とする請求項1または請求項2に記載の成膜方法。
- 前記Co膜はシリコンの上に成膜され、成膜後、不活性ガス雰囲気または還元ガス雰囲気でシリサイド化のための熱処理を行うことを特徴とする請求項1または請求項2に記載の成膜方法。
- 処理容器内に基板を収容し、前記処理容器内にニッケルアミジネートを含む成膜原料とカルボン酸を含む還元剤とを気相状態で導入し、前記還元剤を構成するカルボン酸を蟻酸または酢酸とし、成膜の際の基板温度を120〜250℃として、基板上にNi膜を成膜することを特徴とする成膜方法。
- 前記成膜原料を構成するニッケルアミジネートは、ビス(N,N′−ジ−ターシャリブチル−アセトアミジネート)ニッケル(II)であることを特徴とする請求項6に記載の成膜方法。
- 前記Ni膜はシリコンの上に成膜され、成膜後、不活性ガス雰囲気または還元ガス雰囲気でシリサイド化のための熱処理を行うことを特徴とする請求項6または請求項7に記載の成膜方法。
- 前記処理容器内に前記成膜原料と前記還元剤とを同時に供給することを特徴とする請求項1から請求項8のいずれか1項に記載の成膜方法。
- 前記処理容器内に前記成膜原料と前記還元剤とをパージガスの供給を挟んで交互的に供給することを特徴とする請求項1から請求項8のいずれか1項に記載の成膜方法。
- コンピュータ上で動作し、成膜装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項10のいずれかの成膜方法が行われるように、コンピュータに前記成膜装置を制御させることを特徴とする記憶媒体。
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US13/054,361 US20120164328A1 (en) | 2009-09-17 | 2010-08-26 | Film formation method and storage medium |
PCT/JP2010/064573 WO2011033917A1 (ja) | 2009-09-17 | 2010-08-27 | 成膜方法および記憶媒体 |
KR1020107026851A KR101362176B1 (ko) | 2009-09-17 | 2010-08-27 | 성막 방법 및 기억 매체 |
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US9257302B1 (en) | 2004-03-25 | 2016-02-09 | Novellus Systems, Inc. | CVD flowable gap fill |
US7524735B1 (en) | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
US9245739B2 (en) | 2006-11-01 | 2016-01-26 | Lam Research Corporation | Low-K oxide deposition by hydrolysis and condensation |
US8278224B1 (en) * | 2009-09-24 | 2012-10-02 | Novellus Systems, Inc. | Flowable oxide deposition using rapid delivery of process gases |
US9719169B2 (en) | 2010-12-20 | 2017-08-01 | Novellus Systems, Inc. | System and apparatus for flowable deposition in semiconductor fabrication |
JP5725454B2 (ja) * | 2011-03-25 | 2015-05-27 | 株式会社アルバック | NiSi膜の形成方法、シリサイド膜の形成方法、シリサイドアニール用金属膜の形成方法、真空処理装置、及び成膜装置 |
JP5826698B2 (ja) | 2011-04-13 | 2015-12-02 | 株式会社アルバック | Ni膜の形成方法 |
JP5661006B2 (ja) * | 2011-09-02 | 2015-01-28 | 東京エレクトロン株式会社 | ニッケル膜の成膜方法 |
KR101841811B1 (ko) | 2011-10-07 | 2018-03-23 | 도쿄엘렉트론가부시키가이샤 | 코발트계 막 형성 방법, 코발트계 막 형성 재료 및 신규 화합물 |
JP5806912B2 (ja) * | 2011-11-08 | 2015-11-10 | 株式会社アルバック | 液体原料の気化方法 |
US8846536B2 (en) | 2012-03-05 | 2014-09-30 | Novellus Systems, Inc. | Flowable oxide film with tunable wet etch rate |
JP5917351B2 (ja) * | 2012-09-20 | 2016-05-11 | 東京エレクトロン株式会社 | 金属膜の成膜方法 |
US20140206190A1 (en) * | 2013-01-23 | 2014-07-24 | International Business Machines Corporation | Silicide Formation in High-Aspect Ratio Structures |
JP6308584B2 (ja) * | 2013-02-28 | 2018-04-11 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、基板処理システム及びプログラム |
US9847222B2 (en) | 2013-10-25 | 2017-12-19 | Lam Research Corporation | Treatment for flowable dielectric deposition on substrate surfaces |
US10049921B2 (en) | 2014-08-20 | 2018-08-14 | Lam Research Corporation | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor |
US9916977B2 (en) | 2015-11-16 | 2018-03-13 | Lam Research Corporation | Low k dielectric deposition via UV driven photopolymerization |
US10388546B2 (en) | 2015-11-16 | 2019-08-20 | Lam Research Corporation | Apparatus for UV flowable dielectric |
JP6559107B2 (ja) * | 2016-09-09 | 2019-08-14 | 東京エレクトロン株式会社 | 成膜方法および成膜システム |
JP7161767B2 (ja) | 2019-04-22 | 2022-10-27 | 気相成長株式会社 | 形成材料、形成方法、及び新規化合物 |
JP7332211B2 (ja) * | 2019-04-22 | 2023-08-23 | 気相成長株式会社 | 新規化合物および製造方法 |
KR20200124351A (ko) * | 2019-04-23 | 2020-11-03 | 삼성전자주식회사 | 코발트 전구체, 이를 이용한 코발트 함유막의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
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US6387803B2 (en) * | 1997-01-29 | 2002-05-14 | Ultratech Stepper, Inc. | Method for forming a silicide region on a silicon body |
US7105434B2 (en) * | 1999-10-02 | 2006-09-12 | Uri Cohen | Advanced seed layery for metallic interconnects |
US7557229B2 (en) * | 2002-11-15 | 2009-07-07 | President And Fellows Of Harvard College | Atomic layer deposition using metal amidinates |
US20080032064A1 (en) * | 2006-07-10 | 2008-02-07 | President And Fellows Of Harvard College | Selective sealing of porous dielectric materials |
JP2008031541A (ja) * | 2006-07-31 | 2008-02-14 | Tokyo Electron Ltd | Cvd成膜方法およびcvd成膜装置 |
AU2008347088A1 (en) * | 2007-04-09 | 2009-07-16 | President And Fellows Of Harvard College | Cobalt nitride layers for copper interconnects and methods for forming them |
JP2011063849A (ja) * | 2009-09-17 | 2011-03-31 | Tokyo Electron Ltd | 成膜方法および記憶媒体 |
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KR20110046389A (ko) | 2011-05-04 |
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US20120164328A1 (en) | 2012-06-28 |
JP2011063848A (ja) | 2011-03-31 |
TW201124554A (en) | 2011-07-16 |
WO2011033917A1 (ja) | 2011-03-24 |
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