JP5659041B2 - 成膜方法および記憶媒体 - Google Patents
成膜方法および記憶媒体 Download PDFInfo
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- JP5659041B2 JP5659041B2 JP2011038774A JP2011038774A JP5659041B2 JP 5659041 B2 JP5659041 B2 JP 5659041B2 JP 2011038774 A JP2011038774 A JP 2011038774A JP 2011038774 A JP2011038774 A JP 2011038774A JP 5659041 B2 JP5659041 B2 JP 5659041B2
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- 238000000034 method Methods 0.000 title claims description 43
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 239000002994 raw material Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000354 decomposition reaction Methods 0.000 claims description 15
- 238000009713 electroplating Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000011343 solid material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000000977 initiatory effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 101
- 230000008569 process Effects 0.000 description 16
- 239000012159 carrier gas Substances 0.000 description 13
- 238000010790 dilution Methods 0.000 description 13
- 239000012895 dilution Substances 0.000 description 13
- 229910017052 cobalt Inorganic materials 0.000 description 11
- 239000010941 cobalt Substances 0.000 description 11
- 238000010926 purge Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000004455 differential thermal analysis Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BXCQGSQPWPGFIV-UHFFFAOYSA-N carbon monoxide;cobalt;cobalt(2+);methanone Chemical compound [Co].[Co+2].O=[CH-].O=[CH-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] BXCQGSQPWPGFIV-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
また、そのような成膜方法を実行するためのプログラムを記憶した記憶媒体を提供することを課題とする。
図1は、本発明の成膜方法を実施するための成膜装置の一例を示す略断面である。
この成膜装置100は、気密に構成された略円筒状のチャンバー1を有しており、その中には被処理基板である半導体ウエハWを水平に支持するためのサセプタ2が、後述する排気室の底部からその中央下部に達する円筒状の支持部材3により支持された状態で配置されている。このサセプタ2はAlN等のセラミックスからなっている。また、サセプタ2にはヒーター5が埋め込まれており、このヒーター5にはヒーター電源6が接続されている。一方、サセプタ2の上面近傍には熱電対7が設けられている。熱電対7の信号は後述する温度コントローラ60に伝送されるようになっている。そして、温度コントローラ60は熱電対7の信号に応じてヒーター電源6に指令を送信し、ヒーター5の加熱を制御してウエハWを所定の温度に制御するようになっている。なお、サセプタ2には3本のウエハ昇降ピン(図示せず)がサセプタ2の表面に対して突没可能に設けられており、ウエハWを搬送する際に、サセプタ2の表面から突出した状態にされる。
次に、以上のように構成された成膜装置を用いて行われる本発明の第1の実施形態に係る成膜方法について説明する。
次に、上記成膜装置を用いて行われる本発明の第2の実施形態に係る成膜方法について説明する。
なお、本発明は、上記実施の形態に限定されることなく種々変形可能である。例えば、成膜装置は図1に示したものに限定されず、種々のものを適用可能である。また、成膜原料であるCo4(CO)12の供給手法は上記実施形態の手法に限定する必要はなく、種々の方法を適用することができる。
2;サセプタ
5;ヒーター
7;熱電対
10;シャワーヘッド
23;排気装置
30;ガス供給機構
31;成膜原料容器
37;COガス供給源
60;温度コントローラ
70;制御部
71;プロセスコントローラ
73;記憶部(記憶媒体)
W;半導体ウエハ
Claims (6)
- 処理容器内に基板を配置し、前記処理容器内に単一原料として気体状のCo4(CO)12を供給し、前記基板上でCo4(CO)12を熱分解させて前記基板上にCo膜を成膜するにあたり、
成膜原料として固体原料であるCo 2 (CO) 8 を用い、これをCo 2 (CO) 8 の分解開始温度未満の温度で気化させ、これにより生成された気体状のCo 2 (CO) 8 をCo 4 (CO) 12 が安定に存在する温度にして気体状のCo 4 (CO) 12 に変化させ、前記処理容器内に供給することを特徴とする成膜方法。 - 前記Co2(CO)8を45℃未満の温度で気化させることを特徴とする請求項1に記載の成膜方法。
- 前記気体状のCo2(CO)8を100〜120℃に加熱して前記気体状のCo4(CO)12に変化させることを特徴とする請求項1または請求項2に記載の成膜方法。
- 基板の加熱温度を120〜300℃とすることを特徴とする請求項1から請求項3のいずれか1項に記載の成膜方法。
- 前記Co膜を成膜後、その上に電解メッキによりCuを堆積させることを特徴とする請求項1から請求項4のいずれか1項に記載の成膜方法。
- コンピュータ上で動作し、成膜装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項5のいずれかの成膜方法が行われるように、コンピュータに前記成膜装置を制御させることを特徴とする記憶媒体。
Priority Applications (2)
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JP2011038774A JP5659041B2 (ja) | 2011-02-24 | 2011-02-24 | 成膜方法および記憶媒体 |
US13/402,385 US8900991B2 (en) | 2011-02-24 | 2012-02-22 | Film forming method and storage medium |
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JP2011038774A JP5659041B2 (ja) | 2011-02-24 | 2011-02-24 | 成膜方法および記憶媒体 |
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JP2012172251A JP2012172251A (ja) | 2012-09-10 |
JP5659041B2 true JP5659041B2 (ja) | 2015-01-28 |
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JP (1) | JP5659041B2 (ja) |
Family Cites Families (21)
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WO2002045167A2 (en) * | 2000-11-30 | 2002-06-06 | Asm International N.V. | Thin films for magnetic devices |
US9051641B2 (en) * | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US6861355B2 (en) * | 2002-08-29 | 2005-03-01 | Micron Technology, Inc. | Metal plating using seed film |
KR100485386B1 (ko) * | 2003-04-08 | 2005-04-27 | 삼성전자주식회사 | 금속막 증착용 조성물 및 이를 이용한 금속막 형성 방법 |
US7279421B2 (en) * | 2004-11-23 | 2007-10-09 | Tokyo Electron Limited | Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors |
US7270848B2 (en) * | 2004-11-23 | 2007-09-18 | Tokyo Electron Limited | Method for increasing deposition rates of metal layers from metal-carbonyl precursors |
US20090029047A1 (en) * | 2005-03-23 | 2009-01-29 | Tokyo Electron Limited | Film-forming apparatus and film-forming method |
US7485338B2 (en) * | 2005-03-31 | 2009-02-03 | Tokyo Electron Limited | Method for precursor delivery |
JP2006328526A (ja) * | 2005-04-27 | 2006-12-07 | Jsr Corp | 金属膜の形成方法 |
WO2007091339A1 (ja) * | 2006-02-08 | 2007-08-16 | Jsr Corporation | 金属膜の形成方法 |
JP5119618B2 (ja) * | 2006-07-20 | 2013-01-16 | 東京エレクトロン株式会社 | 半導体装置の製造方法、半導体装置の製造装置及び記憶媒体 |
KR20090005747A (ko) * | 2007-07-10 | 2009-01-14 | 한양대학교 산학협력단 | 반도체 소자의 제조방법 |
JP2009084625A (ja) * | 2007-09-28 | 2009-04-23 | Tokyo Electron Ltd | 原料ガスの供給システム及び成膜装置 |
DE102008037944B4 (de) * | 2008-08-14 | 2013-03-21 | Carl Zeiss Sms Gmbh | Verfahren zum elektronenstrahlinduzierten Abscheiden von leitfähigem Material |
KR20110104479A (ko) * | 2008-11-28 | 2011-09-22 | 제이에스알 가부시끼가이샤 | 코발트 카르보닐 착체 함유 용기 및 코발트 카르보닐 착체 조성물 |
JP2010150129A (ja) * | 2008-11-28 | 2010-07-08 | Jsr Corp | コバルトカルボニル錯体入り容器及びコバルト膜の形成方法 |
JP2010159447A (ja) * | 2009-01-07 | 2010-07-22 | Jsr Corp | コバルト膜の形成方法 |
US8531033B2 (en) * | 2009-09-07 | 2013-09-10 | Advanced Interconnect Materials, Llc | Contact plug structure, semiconductor device, and method for forming contact plug |
JP2011063849A (ja) * | 2009-09-17 | 2011-03-31 | Tokyo Electron Ltd | 成膜方法および記憶媒体 |
JP2011063850A (ja) * | 2009-09-17 | 2011-03-31 | Tokyo Electron Ltd | 成膜装置、成膜方法および記憶媒体 |
US8524600B2 (en) * | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
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2011
- 2011-02-24 JP JP2011038774A patent/JP5659041B2/ja active Active
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- 2012-02-22 US US13/402,385 patent/US8900991B2/en active Active
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US20120220121A1 (en) | 2012-08-30 |
JP2012172251A (ja) | 2012-09-10 |
US8900991B2 (en) | 2014-12-02 |
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