JP6680678B2 - シリコンカーバイド上のグラフェン層の形成方法 - Google Patents

シリコンカーバイド上のグラフェン層の形成方法 Download PDF

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JP6680678B2
JP6680678B2 JP2016543267A JP2016543267A JP6680678B2 JP 6680678 B2 JP6680678 B2 JP 6680678B2 JP 2016543267 A JP2016543267 A JP 2016543267A JP 2016543267 A JP2016543267 A JP 2016543267A JP 6680678 B2 JP6680678 B2 JP 6680678B2
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sic
silicon carbide
graphene
metal
heating
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JP2016537292A (ja
JP2016537292A5 (enExample
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イアコピ フランチェスカ
イアコピ フランチェスカ
アフメド モーシン
アフメド モーシン
ボーン カニング ベンジャミン
ボーン カニング ベンジャミン
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ユニバーシティ オブ テクノロジー シドニー
ユニバーシティ オブ テクノロジー シドニー
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/026—Solid phase epitaxial growth through a disordered intermediate layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H10P95/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0197—Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016543267A 2013-09-16 2014-09-08 シリコンカーバイド上のグラフェン層の形成方法 Expired - Fee Related JP6680678B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
AU2013903547 2013-09-16
AU2013903547A AU2013903547A0 (en) 2013-09-16 Process for forming graphene layers on silicon carbide
AU2014902792 2014-07-18
AU2014902792A AU2014902792A0 (en) 2014-07-18 Process for forming graphene layers on silicon carbide
PCT/AU2014/050218 WO2015035465A1 (en) 2013-09-16 2014-09-08 Process for forming graphene layers on silicon carbide

Publications (3)

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JP2016537292A JP2016537292A (ja) 2016-12-01
JP2016537292A5 JP2016537292A5 (enExample) 2019-02-14
JP6680678B2 true JP6680678B2 (ja) 2020-04-15

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JP2016543267A Expired - Fee Related JP6680678B2 (ja) 2013-09-16 2014-09-08 シリコンカーバイド上のグラフェン層の形成方法

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US (1) US9771665B2 (enExample)
EP (1) EP3046872A4 (enExample)
JP (1) JP6680678B2 (enExample)
KR (1) KR20160070073A (enExample)
CN (1) CN105745173B (enExample)
WO (1) WO2015035465A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016141423A1 (en) * 2015-03-06 2016-09-15 Griffith University A process, a structure, and a supercapacitor
JP6426636B2 (ja) * 2016-02-10 2018-11-21 日本電信電話株式会社 センサ
CN106517165B (zh) * 2016-11-07 2018-06-05 山东大学 一种在6H/4H-SiC硅面上用金属辅助内外碳源结合方式生长石墨烯的方法
TWI607966B (zh) * 2016-12-22 2017-12-11 國家中山科學研究院 不同相之石墨結構製作方法
CN106946244B (zh) * 2017-03-22 2019-03-29 西京学院 一种基于无电镀铜SiC颗粒制备石墨烯和碳纳米管混合物的方法
KR101944385B1 (ko) * 2017-09-14 2019-02-01 김동호 메커니컬 실
CN108101028A (zh) * 2017-09-18 2018-06-01 山东大学 一种在6H/4H-SiC硅面上利用复合金属辅助生长石墨烯的方法
MY188501A (en) * 2018-12-26 2021-12-16 Mimos Berhad Method of forming graphene bump structure
CN109742379A (zh) * 2019-01-28 2019-05-10 哈工大机器人（岳阳）军民融合研究院 一种在Si/C复合材料上生长石墨烯的方法、利用该方法制得的材料以及其应用
CN111747372B (zh) * 2019-03-26 2024-06-14 深圳清力技术有限公司 一种无边缘凸起的金属盖石墨岛及其制备方法
CN110124526B (zh) * 2019-04-30 2022-06-28 湖北工业大学 一种碳化硅无机陶瓷膜的生产方法
WO2022087681A1 (en) * 2020-10-30 2022-05-05 University Of Technology Sydney Graphene based electrode for electrophysiological readings
CN115465856B (zh) * 2021-06-10 2024-07-19 中国科学院上海微系统与信息技术研究所 图形化石墨烯的制备方法
CN113604100B (zh) * 2021-07-30 2022-12-20 雷索新材料(苏州)有限公司 一种石墨烯/铜/微米颗粒复合材料及其制备方法、石墨烯高温发热油墨及应用
TWI780901B (zh) * 2021-09-09 2022-10-11 合晶科技股份有限公司 複合基板及其製造方法
CN114314569B (zh) * 2022-01-10 2024-01-09 厦门大学 一种在基体上形成石墨烯的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101622306B1 (ko) * 2009-10-29 2016-05-19 삼성전자주식회사 그라펜 시트, 이를 포함하는 그라펜 기재 및 그의 제조방법
KR101344493B1 (ko) * 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
US20120161098A1 (en) * 2009-08-20 2012-06-28 Nec Corporation Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element
KR101636442B1 (ko) * 2009-11-10 2016-07-21 삼성전자주식회사 촉매합금을 이용한 그라핀의 제조방법
KR101156355B1 (ko) * 2009-12-07 2012-06-13 서울대학교산학협력단 탄소가 용해된 실리콘 박막을 이용한 그래핀 제조방법
KR101132706B1 (ko) * 2010-02-01 2012-04-06 한국과학기술원 그래핀 층 형성 방법
CN101834206B (zh) * 2010-04-12 2012-10-10 清华大学 半导体器件结构及其形成方法
JP2012025004A (ja) 2010-07-22 2012-02-09 Seiko Epson Corp グラフェンシート付き基材及びグラフェンシートの製造方法
FR2982281B1 (fr) * 2011-11-07 2014-03-07 Commissariat Energie Atomique Procede de synthese d'un feuillet de graphene sur un siliciure de platine, structures obtenues par ce procede et leurs utilisations
TWI448427B (zh) * 2012-02-08 2014-08-11 Nat Univ Tsing Hua 利用低頻電磁波製備石墨烯之方法
US9117667B2 (en) * 2012-07-11 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Carbon layer and method of manufacture
KR102059129B1 (ko) * 2012-11-21 2019-12-24 삼성전자주식회사 그래핀의 제조 방법 및 이를 포함하는 그래핀 적용 소자
KR101425376B1 (ko) * 2013-02-12 2014-08-01 한국과학기술연구원 고분자 기반의 대면적 탄소 나노그물 및 그 제조방법
WO2014131043A1 (en) * 2013-02-25 2014-08-28 Solan, LLC Methods for fabricating graphite-based structures and devices made therefrom

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Publication number Publication date
EP3046872A4 (en) 2017-07-12
US20160230304A1 (en) 2016-08-11
JP2016537292A (ja) 2016-12-01
US9771665B2 (en) 2017-09-26
CN105745173B (zh) 2019-01-18
WO2015035465A1 (en) 2015-03-19
CN105745173A (zh) 2016-07-06
EP3046872A1 (en) 2016-07-27
KR20160070073A (ko) 2016-06-17

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