KR20160070073A - 탄화규소 상에 그래핀 층을 형성하는 방법 - Google Patents

탄화규소 상에 그래핀 층을 형성하는 방법 Download PDF

Info

Publication number
KR20160070073A
KR20160070073A KR1020167009705A KR20167009705A KR20160070073A KR 20160070073 A KR20160070073 A KR 20160070073A KR 1020167009705 A KR1020167009705 A KR 1020167009705A KR 20167009705 A KR20167009705 A KR 20167009705A KR 20160070073 A KR20160070073 A KR 20160070073A
Authority
KR
South Korea
Prior art keywords
metal
sic
silicon carbide
layer
graphene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020167009705A
Other languages
English (en)
Korean (ko)
Inventor
프란체스카 이아코피
모신 아메드
벤자민 보한 쿠닝
Original Assignee
그리피스 유니버시티
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2013903547A external-priority patent/AU2013903547A0/en
Application filed by 그리피스 유니버시티 filed Critical 그리피스 유니버시티
Publication of KR20160070073A publication Critical patent/KR20160070073A/ko
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C01B31/0446—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/026—Solid phase epitaxial growth through a disordered intermediate layer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H10P95/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0197—Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020167009705A 2013-09-16 2014-09-08 탄화규소 상에 그래핀 층을 형성하는 방법 Abandoned KR20160070073A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
AU2013903547 2013-09-16
AU2013903547A AU2013903547A0 (en) 2013-09-16 Process for forming graphene layers on silicon carbide
AU2014902792 2014-07-18
AU2014902792A AU2014902792A0 (en) 2014-07-18 Process for forming graphene layers on silicon carbide
PCT/AU2014/050218 WO2015035465A1 (en) 2013-09-16 2014-09-08 Process for forming graphene layers on silicon carbide

Publications (1)

Publication Number Publication Date
KR20160070073A true KR20160070073A (ko) 2016-06-17

Family

ID=52664840

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167009705A Abandoned KR20160070073A (ko) 2013-09-16 2014-09-08 탄화규소 상에 그래핀 층을 형성하는 방법

Country Status (6)

Country Link
US (1) US9771665B2 (enExample)
EP (1) EP3046872A4 (enExample)
JP (1) JP6680678B2 (enExample)
KR (1) KR20160070073A (enExample)
CN (1) CN105745173B (enExample)
WO (1) WO2015035465A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019054563A1 (ko) * 2017-09-14 2019-03-21 김동호 메커니컬 실

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016141423A1 (en) * 2015-03-06 2016-09-15 Griffith University A process, a structure, and a supercapacitor
JP6426636B2 (ja) * 2016-02-10 2018-11-21 日本電信電話株式会社 センサ
CN106517165B (zh) * 2016-11-07 2018-06-05 山东大学 一种在6H/4H-SiC硅面上用金属辅助内外碳源结合方式生长石墨烯的方法
TWI607966B (zh) * 2016-12-22 2017-12-11 國家中山科學研究院 不同相之石墨結構製作方法
CN106946244B (zh) * 2017-03-22 2019-03-29 西京学院 一种基于无电镀铜SiC颗粒制备石墨烯和碳纳米管混合物的方法
CN108101028A (zh) * 2017-09-18 2018-06-01 山东大学 一种在6H/4H-SiC硅面上利用复合金属辅助生长石墨烯的方法
MY188501A (en) * 2018-12-26 2021-12-16 Mimos Berhad Method of forming graphene bump structure
CN109742379A (zh) * 2019-01-28 2019-05-10 哈工大机器人（岳阳）军民融合研究院 一种在Si/C复合材料上生长石墨烯的方法、利用该方法制得的材料以及其应用
CN111747372B (zh) * 2019-03-26 2024-06-14 深圳清力技术有限公司 一种无边缘凸起的金属盖石墨岛及其制备方法
CN110124526B (zh) * 2019-04-30 2022-06-28 湖北工业大学 一种碳化硅无机陶瓷膜的生产方法
WO2022087681A1 (en) * 2020-10-30 2022-05-05 University Of Technology Sydney Graphene based electrode for electrophysiological readings
CN115465856B (zh) * 2021-06-10 2024-07-19 中国科学院上海微系统与信息技术研究所 图形化石墨烯的制备方法
CN113604100B (zh) * 2021-07-30 2022-12-20 雷索新材料(苏州)有限公司 一种石墨烯/铜/微米颗粒复合材料及其制备方法、石墨烯高温发热油墨及应用
TWI780901B (zh) * 2021-09-09 2022-10-11 合晶科技股份有限公司 複合基板及其製造方法
CN114314569B (zh) * 2022-01-10 2024-01-09 厦门大学 一种在基体上形成石墨烯的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101622306B1 (ko) * 2009-10-29 2016-05-19 삼성전자주식회사 그라펜 시트, 이를 포함하는 그라펜 기재 및 그의 제조방법
KR101344493B1 (ko) * 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
US20120161098A1 (en) * 2009-08-20 2012-06-28 Nec Corporation Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element
KR101636442B1 (ko) * 2009-11-10 2016-07-21 삼성전자주식회사 촉매합금을 이용한 그라핀의 제조방법
KR101156355B1 (ko) * 2009-12-07 2012-06-13 서울대학교산학협력단 탄소가 용해된 실리콘 박막을 이용한 그래핀 제조방법
KR101132706B1 (ko) * 2010-02-01 2012-04-06 한국과학기술원 그래핀 층 형성 방법
CN101834206B (zh) * 2010-04-12 2012-10-10 清华大学 半导体器件结构及其形成方法
JP2012025004A (ja) 2010-07-22 2012-02-09 Seiko Epson Corp グラフェンシート付き基材及びグラフェンシートの製造方法
FR2982281B1 (fr) * 2011-11-07 2014-03-07 Commissariat Energie Atomique Procede de synthese d'un feuillet de graphene sur un siliciure de platine, structures obtenues par ce procede et leurs utilisations
TWI448427B (zh) * 2012-02-08 2014-08-11 Nat Univ Tsing Hua 利用低頻電磁波製備石墨烯之方法
US9117667B2 (en) * 2012-07-11 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Carbon layer and method of manufacture
KR102059129B1 (ko) * 2012-11-21 2019-12-24 삼성전자주식회사 그래핀의 제조 방법 및 이를 포함하는 그래핀 적용 소자
KR101425376B1 (ko) * 2013-02-12 2014-08-01 한국과학기술연구원 고분자 기반의 대면적 탄소 나노그물 및 그 제조방법
WO2014131043A1 (en) * 2013-02-25 2014-08-28 Solan, LLC Methods for fabricating graphite-based structures and devices made therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019054563A1 (ko) * 2017-09-14 2019-03-21 김동호 메커니컬 실

Also Published As

Publication number Publication date
JP6680678B2 (ja) 2020-04-15
EP3046872A4 (en) 2017-07-12
US20160230304A1 (en) 2016-08-11
JP2016537292A (ja) 2016-12-01
US9771665B2 (en) 2017-09-26
CN105745173B (zh) 2019-01-18
WO2015035465A1 (en) 2015-03-19
CN105745173A (zh) 2016-07-06
EP3046872A1 (en) 2016-07-27

Similar Documents

Publication Publication Date Title
KR20160070073A (ko) 탄화규소 상에 그래핀 층을 형성하는 방법
Wagner et al. Graphene transfer methods for the fabrication of membrane-based NEMS devices
US20110200787A1 (en) Suspended Thin Film Structures
CN102656016B (zh) 石墨烯卷对卷转印方法、由该方法制成的石墨烯卷及石墨烯卷对卷转印装置
US20130266739A1 (en) Process for forming carbon film or inorganic material film on substrate by physical vapor deposition
EP2402975B1 (en) Radiation window, and a method for its manufacturing
US8778197B2 (en) Graphene windows, methods for making same, and devices containing same
KR20110006644A (ko) 그래핀 시트의 제조 방법, 그래핀 적층체, 변형 수용성 그래핀 시트의 제조 방법, 변형 수용성 그래핀 시트, 및 이를 이용하는 소자
KR101176544B1 (ko) 투과 전자 현미경 관찰용 그리드 구조체 및 이의 제조 방법
KR101475266B1 (ko) 고품질 그래핀층 형성을 위한 기판 및 방법
Choi et al. Graphite Pellicle: Physical Shield for Next‐Generation EUV Lithography Technology
JP2023552876A (ja) 中間ポリマー転写層上の二次元材料とヘテロ構造
Qin et al. A study of nickel silicide film as a mechanical material
EP3062335A1 (en) Method of intercalating an insulating layer between a metal layer and a graphene layer and method of fabricating semiconductor device using the intercalation method
JP6339976B2 (ja) 炭素微小電極の製造方法
US20140314998A1 (en) Porous material for thermal and/or electrical isolation and methods of manufacture
Pinto et al. Amorphous silicon self‐rolling micro electromechanical systems: from residual stress control to complex 3D structures
KR101851171B1 (ko) 그래핀계 배리어 필름의 제조 방법
Harada et al. A versatile patterning process based on easily soluble sacrificial bilayers
Namgung et al. Stretchable hydrogen sensors employing palladium nanosheets transferred onto an elastomeric substrate
SE541523C2 (en) Electrical contacts for low dimensional materials
Patil et al. Piezoresistive polysilicon film obtained by low-temperature aluminum-induced crystallization
KR101772011B1 (ko) 그래핀 적층 패턴 형성 방법
Howell et al. Developing Ni–Al and Ru–Al intermetallic films for use in microelectromechanical systems
CN111217359A (zh) 一种Si基衬底异质集成石墨烯的制备方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PC1904 Unpaid initial registration fee

St.27 status event code: A-2-2-U10-U14-oth-PC1904

St.27 status event code: N-2-6-B10-B12-nap-PC1904

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000