CN105745173B - 用于在碳化硅上形成石墨烯层的方法 - Google Patents

用于在碳化硅上形成石墨烯层的方法 Download PDF

Info

Publication number
CN105745173B
CN105745173B CN201480056975.4A CN201480056975A CN105745173B CN 105745173 B CN105745173 B CN 105745173B CN 201480056975 A CN201480056975 A CN 201480056975A CN 105745173 B CN105745173 B CN 105745173B
Authority
CN
China
Prior art keywords
metal
sic
graphene
carbon
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480056975.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN105745173A (zh
Inventor
弗兰切斯卡·亚科皮
穆赫辛·艾哈迈德
本杰明·沃恩·坎宁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Technology Sydney
Original Assignee
University of Technology Sydney
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2013903547A external-priority patent/AU2013903547A0/en
Application filed by University of Technology Sydney filed Critical University of Technology Sydney
Publication of CN105745173A publication Critical patent/CN105745173A/zh
Application granted granted Critical
Publication of CN105745173B publication Critical patent/CN105745173B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/026—Solid phase epitaxial growth through a disordered intermediate layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0197—Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201480056975.4A 2013-09-16 2014-09-08 用于在碳化硅上形成石墨烯层的方法 Expired - Fee Related CN105745173B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
AU2013903547A AU2013903547A0 (en) 2013-09-16 Process for forming graphene layers on silicon carbide
AU2013903547 2013-09-16
AU2014902792A AU2014902792A0 (en) 2014-07-18 Process for forming graphene layers on silicon carbide
AU2014902792 2014-07-18
PCT/AU2014/050218 WO2015035465A1 (en) 2013-09-16 2014-09-08 Process for forming graphene layers on silicon carbide

Publications (2)

Publication Number Publication Date
CN105745173A CN105745173A (zh) 2016-07-06
CN105745173B true CN105745173B (zh) 2019-01-18

Family

ID=52664840

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480056975.4A Expired - Fee Related CN105745173B (zh) 2013-09-16 2014-09-08 用于在碳化硅上形成石墨烯层的方法

Country Status (6)

Country Link
US (1) US9771665B2 (enExample)
EP (1) EP3046872A4 (enExample)
JP (1) JP6680678B2 (enExample)
KR (1) KR20160070073A (enExample)
CN (1) CN105745173B (enExample)
WO (1) WO2015035465A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3265423B1 (en) * 2015-03-06 2021-06-09 University Of Technology, Sydney A process, a structure, and a supercapacitor
JP6426636B2 (ja) * 2016-02-10 2018-11-21 日本電信電話株式会社 センサ
CN106517165B (zh) * 2016-11-07 2018-06-05 山东大学 一种在6H/4H-SiC硅面上用金属辅助内外碳源结合方式生长石墨烯的方法
TWI607966B (zh) * 2016-12-22 2017-12-11 國家中山科學研究院 不同相之石墨結構製作方法
CN106946244B (zh) * 2017-03-22 2019-03-29 西京学院 一种基于无电镀铜SiC颗粒制备石墨烯和碳纳米管混合物的方法
KR101944385B1 (ko) * 2017-09-14 2019-02-01 김동호 메커니컬 실
CN108101028A (zh) * 2017-09-18 2018-06-01 山东大学 一种在6H/4H-SiC硅面上利用复合金属辅助生长石墨烯的方法
MY188501A (en) * 2018-12-26 2021-12-16 Mimos Berhad Method of forming graphene bump structure
CN109742379A (zh) * 2019-01-28 2019-05-10 哈工大机器人（岳阳）军民融合研究院 一种在Si/C复合材料上生长石墨烯的方法、利用该方法制得的材料以及其应用
CN111747372B (zh) * 2019-03-26 2024-06-14 深圳清力技术有限公司 一种无边缘凸起的金属盖石墨岛及其制备方法
CN110124526B (zh) * 2019-04-30 2022-06-28 湖北工业大学 一种碳化硅无机陶瓷膜的生产方法
WO2022087681A1 (en) * 2020-10-30 2022-05-05 University Of Technology Sydney Graphene based electrode for electrophysiological readings
CN115465856B (zh) * 2021-06-10 2024-07-19 中国科学院上海微系统与信息技术研究所 图形化石墨烯的制备方法
CN113604100B (zh) * 2021-07-30 2022-12-20 雷索新材料(苏州)有限公司 一种石墨烯/铜/微米颗粒复合材料及其制备方法、石墨烯高温发热油墨及应用
TWI780901B (zh) * 2021-09-09 2022-10-11 合晶科技股份有限公司 複合基板及其製造方法
CN114314569B (zh) * 2022-01-10 2024-01-09 厦门大学 一种在基体上形成石墨烯的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834206A (zh) * 2010-04-12 2010-09-15 清华大学 半导体器件结构及其形成方法
KR20110064162A (ko) * 2009-12-07 2011-06-15 서울대학교산학협력단 탄소가 용해된 실리콘 박막을 이용한 그래핀 제조방법
JP2012025004A (ja) * 2010-07-22 2012-02-09 Seiko Epson Corp グラフェンシート付き基材及びグラフェンシートの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101622306B1 (ko) * 2009-10-29 2016-05-19 삼성전자주식회사 그라펜 시트, 이를 포함하는 그라펜 기재 및 그의 제조방법
KR101344493B1 (ko) * 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
US20120161098A1 (en) * 2009-08-20 2012-06-28 Nec Corporation Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element
KR101636442B1 (ko) * 2009-11-10 2016-07-21 삼성전자주식회사 촉매합금을 이용한 그라핀의 제조방법
KR101132706B1 (ko) * 2010-02-01 2012-04-06 한국과학기술원 그래핀 층 형성 방법
FR2982281B1 (fr) * 2011-11-07 2014-03-07 Commissariat Energie Atomique Procede de synthese d'un feuillet de graphene sur un siliciure de platine, structures obtenues par ce procede et leurs utilisations
TWI448427B (zh) * 2012-02-08 2014-08-11 Nat Univ Tsing Hua 利用低頻電磁波製備石墨烯之方法
US9117667B2 (en) * 2012-07-11 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Carbon layer and method of manufacture
KR102059129B1 (ko) * 2012-11-21 2019-12-24 삼성전자주식회사 그래핀의 제조 방법 및 이를 포함하는 그래핀 적용 소자
KR101425376B1 (ko) * 2013-02-12 2014-08-01 한국과학기술연구원 고분자 기반의 대면적 탄소 나노그물 및 그 제조방법
US9478422B2 (en) * 2013-02-25 2016-10-25 Solan, LLC Methods for fabricating refined graphite-based structures and devices made therefrom

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110064162A (ko) * 2009-12-07 2011-06-15 서울대학교산학협력단 탄소가 용해된 실리콘 박막을 이용한 그래핀 제조방법
CN101834206A (zh) * 2010-04-12 2010-09-15 清华大学 半导体器件结构及其形成方法
JP2012025004A (ja) * 2010-07-22 2012-02-09 Seiko Epson Corp グラフェンシート付き基材及びグラフェンシートの製造方法

Also Published As

Publication number Publication date
WO2015035465A1 (en) 2015-03-19
US20160230304A1 (en) 2016-08-11
CN105745173A (zh) 2016-07-06
EP3046872A1 (en) 2016-07-27
KR20160070073A (ko) 2016-06-17
US9771665B2 (en) 2017-09-26
EP3046872A4 (en) 2017-07-12
JP6680678B2 (ja) 2020-04-15
JP2016537292A (ja) 2016-12-01

Similar Documents

Publication Publication Date Title
CN105745173B (zh) 用于在碳化硅上形成石墨烯层的方法
US20130266739A1 (en) Process for forming carbon film or inorganic material film on substrate by physical vapor deposition
US20110200787A1 (en) Suspended Thin Film Structures
US8945937B2 (en) Apparatus and method for analyzing graphene and graphene boundary
Wijesundara et al. Single-Source Chemical Vapor Deposition of 3 C SiC Films in a LPCVD Reactor: I. Growth, Structure, and Chemical Characterization
KR20110006644A (ko) 그래핀 시트의 제조 방법, 그래핀 적층체, 변형 수용성 그래핀 시트의 제조 방법, 변형 수용성 그래핀 시트, 및 이를 이용하는 소자
Hemmat et al. Tuning thermal transport through atomically thin Ti3C2Tz MXene by current annealing in vacuum
Bogdanowicz et al. Growth and isolation of large area boron‐doped nanocrystalline diamond sheets: a route toward Diamond‐on‐Graphene heterojunction
KR101475266B1 (ko) 고품질 그래핀층 형성을 위한 기판 및 방법
KR20160005504A (ko) 층수가 제어된 그래핀의 제조방법 및 그를 이용한 전자소자의 제조방법
KR20140083159A (ko) 양면 마이크로 가스 센서 및 그의 제조방법
EP3062335B1 (en) Method of intercalating an insulating layer between a metal layer and a graphene layer and method of fabricating semiconductor device using the intercalation method
Schultes et al. Granular metal–carbon nanocomposites as piezoresistive sensor films–Part 1: Experimental results and morphology
KR20140138675A (ko) 나노 구조를 갖는 기판을 사용한 열전 변환 재료 및 그 제조 방법
WO2014090938A1 (en) Conductive atomic force microscope tips coated with graphene
KR20020003464A (ko) 탄소나노튜브를 이용한 가스센서 및 그의 제조 방법
KR101156355B1 (ko) 탄소가 용해된 실리콘 박막을 이용한 그래핀 제조방법
KR101568159B1 (ko) 원자층 증착법을 이용한 결함 치유 방법
GB2518858A (en) Graphene
CN105377753B (zh) 利用覆盖构件制造石墨烯的方法和制造包含该石墨烯的电子元件的方法
KR20140108829A (ko) 롤투롤 방식을 이용한 그래핀 필름의 분리, 전사 방법
KR20110014847A (ko) 그라핀 제조방법 및 그라핀층을 포함하는 적층구조물
El Mel et al. Fabrication of a nickel nanowire mesh electrode suspended on polymer substrate
GB2508889A (en) Conductive atomic force microscope tips coated with graphene
TWI631077B (zh) 複合石墨結構、其製造方法及其複合電極結構

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20171024

Address after: New South Wales Australia

Applicant after: University of Technology, Sydney

Address before: Queensland, Australia

Applicant before: Griffith University

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190118

Termination date: 20210908

CF01 Termination of patent right due to non-payment of annual fee