JP2010283337A5 - - Google Patents
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- Publication number
- JP2010283337A5 JP2010283337A5 JP2010094068A JP2010094068A JP2010283337A5 JP 2010283337 A5 JP2010283337 A5 JP 2010283337A5 JP 2010094068 A JP2010094068 A JP 2010094068A JP 2010094068 A JP2010094068 A JP 2010094068A JP 2010283337 A5 JP2010283337 A5 JP 2010283337A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- metal
- single crystal
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 24
- 239000002184 metal Substances 0.000 claims 16
- 229910052751 metal Inorganic materials 0.000 claims 16
- 239000010949 copper Substances 0.000 claims 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 9
- 238000007747 plating Methods 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010094068A JP5525314B2 (ja) | 2009-05-02 | 2010-04-15 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009112367 | 2009-05-02 | ||
| JP2009112367 | 2009-05-02 | ||
| JP2010094068A JP5525314B2 (ja) | 2009-05-02 | 2010-04-15 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010283337A JP2010283337A (ja) | 2010-12-16 |
| JP2010283337A5 true JP2010283337A5 (enExample) | 2013-04-18 |
| JP5525314B2 JP5525314B2 (ja) | 2014-06-18 |
Family
ID=43019870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010094068A Expired - Fee Related JP5525314B2 (ja) | 2009-05-02 | 2010-04-15 | 半導体装置の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9112067B2 (enExample) |
| JP (1) | JP5525314B2 (enExample) |
| KR (1) | KR101681695B1 (enExample) |
| CN (1) | CN101877366B (enExample) |
| TW (1) | TWI525845B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8772627B2 (en) * | 2009-08-07 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| FR2971086B1 (fr) * | 2011-01-31 | 2014-04-18 | Inst Polytechnique Grenoble | Structure adaptee a la formation de cellules solaires |
| EP2672520B1 (en) * | 2012-06-06 | 2018-07-04 | SEMIKRON Elektronik GmbH & Co. KG | Method for electroless deposition of a copper layer, electroless deposited copper layer and semiconductor component comprising said electroless deposited copper layer |
| CN103840024B (zh) * | 2012-11-23 | 2018-03-13 | 北京创昱科技有限公司 | 一种互联式柔性太阳能电池及其制作方法 |
| TWI514453B (zh) * | 2013-05-09 | 2015-12-21 | Ecocera Optronics Co Ltd | 基板的製造及清潔方法 |
| DE102013219990B4 (de) | 2013-10-02 | 2022-01-13 | Robert Bosch Gmbh | Verbindungsanordnung mit einem mittels Thermokompression gebondeten Verbindungsmittel und Verfahren |
| KR101622090B1 (ko) * | 2013-11-08 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 |
| AU2014381597A1 (en) * | 2013-11-11 | 2016-05-26 | The Regents Of The University Of Michigan | Thermally-assisted cold-weld bonding for epitaxial lift-off process |
| CN108598217A (zh) * | 2018-04-26 | 2018-09-28 | 上海空间电源研究所 | 一种应力平衡薄型砷化镓太阳电池的制备方法 |
| WO2020123322A2 (en) * | 2018-12-10 | 2020-06-18 | Lam Research Corporation | Low temperature direct copper-copper bonding |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2719230B2 (ja) * | 1990-11-22 | 1998-02-25 | キヤノン株式会社 | 光起電力素子 |
| JP3250573B2 (ja) * | 1992-12-28 | 2002-01-28 | キヤノン株式会社 | 光起電力素子及びその製造方法、並びに発電システム |
| JPH10335683A (ja) * | 1997-05-28 | 1998-12-18 | Ion Kogaku Kenkyusho:Kk | タンデム型太陽電池およびその製造方法 |
| US6268233B1 (en) * | 1998-01-26 | 2001-07-31 | Canon Kabushiki Kaisha | Photovoltaic device |
| JP3127892B2 (ja) | 1998-06-30 | 2001-01-29 | 日新電機株式会社 | 水素負イオンビーム注入方法及び注入装置 |
| DE19929278A1 (de) | 1998-06-26 | 2000-02-17 | Nissin Electric Co Ltd | Verfahren zum Implantieren negativer Wasserstoffionen und Implantierungseinrichtung |
| JP2000077287A (ja) * | 1998-08-26 | 2000-03-14 | Nissin Electric Co Ltd | 結晶薄膜基板の製造方法 |
| JP2000183377A (ja) | 1998-12-17 | 2000-06-30 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置の製造方法 |
| JP2001064007A (ja) | 1999-06-24 | 2001-03-13 | Shin Etsu Chem Co Ltd | Ｇａ添加多結晶シリコンおよびＧａ添加多結晶シリコンウエーハ並びにその製造方法 |
| US6313398B1 (en) | 1999-06-24 | 2001-11-06 | Shin-Etsu Chemical Co., Ltd. | Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same |
| JP2001068709A (ja) * | 1999-08-30 | 2001-03-16 | Kyocera Corp | 薄膜太陽電池 |
| JP4452789B2 (ja) | 1999-09-01 | 2010-04-21 | 独立行政法人 日本原子力研究開発機構 | シリコン系結晶薄板の製造方法および光電変換素子用基板の製造方法 |
| JP2001089291A (ja) | 1999-09-20 | 2001-04-03 | Canon Inc | 液相成長法、半導体部材の製造方法、太陽電池の製造方法 |
| JP2001284622A (ja) * | 2000-03-31 | 2001-10-12 | Canon Inc | 半導体部材の製造方法及び太陽電池の製造方法 |
| JP2003017723A (ja) * | 2001-06-29 | 2003-01-17 | Shin Etsu Handotai Co Ltd | 半導体薄膜の製造方法及び太陽電池の製造方法 |
| JP4495428B2 (ja) * | 2002-09-17 | 2010-07-07 | 株式会社 液晶先端技術開発センター | 薄膜トランジスタの形成方法 |
| TW200406829A (en) | 2002-09-17 | 2004-05-01 | Adv Lcd Tech Dev Ct Co Ltd | Interconnect, interconnect forming method, thin film transistor, and display device |
| JP2008085323A (ja) | 2006-08-31 | 2008-04-10 | National Institute Of Advanced Industrial & Technology | 太陽電池用透明電極基板 |
| US7704352B2 (en) * | 2006-12-01 | 2010-04-27 | Applied Materials, Inc. | High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate |
| US7799182B2 (en) * | 2006-12-01 | 2010-09-21 | Applied Materials, Inc. | Electroplating on roll-to-roll flexible solar cell substrates |
| US7968792B2 (en) * | 2007-03-05 | 2011-06-28 | Seagate Technology Llc | Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same |
| TWI437696B (zh) | 2007-09-21 | 2014-05-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP5367323B2 (ja) * | 2008-07-23 | 2013-12-11 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
| JP5667748B2 (ja) * | 2009-03-18 | 2015-02-12 | 株式会社東芝 | 光透過型太陽電池およびその製造方法 |
-
2010
- 2010-04-15 JP JP2010094068A patent/JP5525314B2/ja not_active Expired - Fee Related
- 2010-04-23 US US12/766,389 patent/US9112067B2/en not_active Expired - Fee Related
- 2010-04-28 CN CN201010171623.7A patent/CN101877366B/zh not_active Expired - Fee Related
- 2010-04-28 KR KR1020100039502A patent/KR101681695B1/ko not_active Expired - Fee Related
- 2010-04-29 TW TW099113607A patent/TWI525845B/zh not_active IP Right Cessation