JP2010103514A5 - - Google Patents
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- Publication number
- JP2010103514A5 JP2010103514A5 JP2009219954A JP2009219954A JP2010103514A5 JP 2010103514 A5 JP2010103514 A5 JP 2010103514A5 JP 2009219954 A JP2009219954 A JP 2009219954A JP 2009219954 A JP2009219954 A JP 2009219954A JP 2010103514 A5 JP2010103514 A5 JP 2010103514A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- semiconductor layer
- substrate
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 24
- 239000013078 crystal Substances 0.000 claims 23
- 238000000034 method Methods 0.000 claims 19
- 239000000758 substrate Substances 0.000 claims 18
- 239000012808 vapor phase Substances 0.000 claims 11
- 239000007789 gas Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 229910000077 silane Inorganic materials 0.000 claims 4
- 239000000463 material Substances 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009219954A JP5705426B2 (ja) | 2008-09-29 | 2009-09-25 | Ｓｏｉ基板の作製方法及び単結晶シリコン層の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008250114 | 2008-09-29 | ||
| JP2008250114 | 2008-09-29 | ||
| JP2009219954A JP5705426B2 (ja) | 2008-09-29 | 2009-09-25 | Ｓｏｉ基板の作製方法及び単結晶シリコン層の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010103514A JP2010103514A (ja) | 2010-05-06 |
| JP2010103514A5 true JP2010103514A5 (enExample) | 2012-10-18 |
| JP5705426B2 JP5705426B2 (ja) | 2015-04-22 |
Family
ID=42057900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009219954A Expired - Fee Related JP5705426B2 (ja) | 2008-09-29 | 2009-09-25 | Ｓｏｉ基板の作製方法及び単結晶シリコン層の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8048754B2 (enExample) |
| JP (1) | JP5705426B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5611571B2 (ja) | 2008-11-27 | 2014-10-22 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法及び半導体装置の作製方法 |
| JP5755931B2 (ja) * | 2010-04-28 | 2015-07-29 | 株式会社半導体エネルギー研究所 | 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法 |
| FR2967813B1 (fr) | 2010-11-18 | 2013-10-04 | Soitec Silicon On Insulator | Procédé de réalisation d'une structure a couche métallique enterrée |
| US20130247967A1 (en) * | 2012-03-23 | 2013-09-26 | Scott Harrington | Gaseous ozone (o3) treatment for solar cell fabrication |
| FR2995444B1 (fr) * | 2012-09-10 | 2016-11-25 | Soitec Silicon On Insulator | Procede de detachement d'une couche |
| JP5755372B2 (ja) * | 2013-03-19 | 2015-07-29 | 長州産業株式会社 | 光発電装置 |
| JP2019114572A (ja) * | 2016-05-09 | 2019-07-11 | 株式会社カネカ | 積層型光電変換装置の製造方法 |
| EP4016699A1 (en) * | 2020-12-17 | 2022-06-22 | Volvo Car Corporation | Temperature management system |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| JP2994837B2 (ja) | 1992-01-31 | 1999-12-27 | キヤノン株式会社 | 半導体基板の平坦化方法、半導体基板の作製方法、及び半導体基板 |
| EP1043768B1 (en) | 1992-01-30 | 2004-09-08 | Canon Kabushiki Kaisha | Process for producing semiconductor substrates |
| JP3085184B2 (ja) | 1996-03-22 | 2000-09-04 | 住友金属工業株式会社 | Ｓｏｉ基板及びその製造方法 |
| JPH1093122A (ja) | 1996-09-10 | 1998-04-10 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜太陽電池の製造方法 |
| JP3697052B2 (ja) * | 1997-03-26 | 2005-09-21 | キヤノン株式会社 | 基板の製造方法及び半導体膜の製造方法 |
| US6251754B1 (en) | 1997-05-09 | 2001-06-26 | Denso Corporation | Semiconductor substrate manufacturing method |
| JP3864495B2 (ja) | 1997-05-15 | 2006-12-27 | 株式会社デンソー | 半導体基板の製造方法 |
| JPH1197379A (ja) | 1997-07-25 | 1999-04-09 | Denso Corp | 半導体基板及び半導体基板の製造方法 |
| US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
| JP3921823B2 (ja) | 1998-07-15 | 2007-05-30 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ |
| JP4476390B2 (ja) * | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| FR2817394B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
| JP4296726B2 (ja) | 2001-06-29 | 2009-07-15 | 株式会社Ｓｕｍｃｏ | 半導体基板の製造方法及び電界効果型トランジスタの製造方法 |
| JP4771510B2 (ja) * | 2004-06-23 | 2011-09-14 | キヤノン株式会社 | 半導体層の製造方法及び基板の製造方法 |
| JP2006216896A (ja) * | 2005-02-07 | 2006-08-17 | Canon Inc | 太陽電池の製造方法 |
| JP2007123858A (ja) * | 2005-09-29 | 2007-05-17 | Sumitomo Chemical Co Ltd | ３−５族窒化物半導体の製造方法 |
| JP2008277477A (ja) * | 2007-04-27 | 2008-11-13 | Fujitsu Microelectronics Ltd | 半導体基板及びその製造方法 |
| US7790563B2 (en) * | 2007-07-13 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device and method for manufacturing semiconductor device |
| US7795114B2 (en) * | 2007-08-10 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of SOI substrate and semiconductor device |
| US7781308B2 (en) * | 2007-12-03 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| CN101504930B (zh) * | 2008-02-06 | 2013-10-16 | 株式会社半导体能源研究所 | Soi衬底的制造方法 |
| JP5611571B2 (ja) * | 2008-11-27 | 2014-10-22 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法及び半導体装置の作製方法 |
-
2009
- 2009-09-23 US US12/564,973 patent/US8048754B2/en not_active Expired - Fee Related
- 2009-09-25 JP JP2009219954A patent/JP5705426B2/ja not_active Expired - Fee Related
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