JP2018535536A5 - - Google Patents
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- JP2018535536A5 JP2018535536A5 JP2018512205A JP2018512205A JP2018535536A5 JP 2018535536 A5 JP2018535536 A5 JP 2018535536A5 JP 2018512205 A JP2018512205 A JP 2018512205A JP 2018512205 A JP2018512205 A JP 2018512205A JP 2018535536 A5 JP2018535536 A5 JP 2018535536A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- layer
- substrate
- graphene
- graphene layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 74
- 229910021389 graphene Inorganic materials 0.000 claims 74
- 239000013078 crystal Substances 0.000 claims 65
- 238000000034 method Methods 0.000 claims 46
- 239000000758 substrate Substances 0.000 claims 43
- 239000004065 semiconductor Substances 0.000 claims 22
- 239000000463 material Substances 0.000 claims 17
- 238000000151 deposition Methods 0.000 claims 11
- 239000002356 single layer Substances 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000011889 copper foil Substances 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562215223P | 2015-09-08 | 2015-09-08 | |
| US62/215,223 | 2015-09-08 | ||
| US201662335784P | 2016-05-13 | 2016-05-13 | |
| US62/335,784 | 2016-05-13 | ||
| US201662361717P | 2016-07-13 | 2016-07-13 | |
| US62/361,717 | 2016-07-13 | ||
| PCT/US2016/050701 WO2017044577A1 (en) | 2015-09-08 | 2016-09-08 | Systems and methods for graphene based layer transfer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018535536A JP2018535536A (ja) | 2018-11-29 |
| JP2018535536A5 true JP2018535536A5 (enExample) | 2019-11-21 |
| JP6938468B2 JP6938468B2 (ja) | 2021-09-22 |
Family
ID=58240052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018512205A Active JP6938468B2 (ja) | 2015-09-08 | 2016-09-08 | グラフェンベースの層転写のためのシステム及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10770289B2 (enExample) |
| EP (2) | EP4105966A3 (enExample) |
| JP (1) | JP6938468B2 (enExample) |
| KR (2) | KR102809444B1 (enExample) |
| CN (2) | CN119349566A (enExample) |
| WO (1) | WO2017044577A1 (enExample) |
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| WO2018089444A1 (en) | 2016-11-08 | 2018-05-17 | Massachusetts Institute Of Technology | Systems and methods of dislocation filtering for layer transfer |
| WO2018156877A1 (en) | 2017-02-24 | 2018-08-30 | Massachusetts Institute Of Technology | Apparatus and methods for curved focal plane array |
| WO2018156876A1 (en) | 2017-02-24 | 2018-08-30 | Kim, Jeehwan | Methods and apparatus for vertically stacked multicolor light-emitting diode (led) display |
| US20200043790A1 (en) * | 2017-04-18 | 2020-02-06 | Massachusetts Institute Of Technology | Systems and methods for fabricating semiconductor devices via remote epitaxy |
| WO2018195412A1 (en) * | 2017-04-21 | 2018-10-25 | Massachusetts Institute Of Technology | Systems and methods for fabricating photovoltaic devices via remote epitaxy |
| WO2019099461A1 (en) * | 2017-11-14 | 2019-05-23 | Massachusetts Institute Of Technology | Epitaxial growth and transfer via patterned two-dimensional (2d) layers |
| CN108517555B (zh) * | 2017-12-29 | 2020-08-04 | 西安电子科技大学 | 基于范德华外延获得大面积高质量柔性自支撑单晶氧化物薄膜的方法 |
| CN108767659A (zh) * | 2018-06-04 | 2018-11-06 | 清华大学 | 一种利用二维材料隔层外延生长激光器的方法 |
| US20210125826A1 (en) * | 2018-06-22 | 2021-04-29 | Massachusetts Institute Of Technology | Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles |
| CN109166881B (zh) * | 2018-07-25 | 2020-09-29 | 深圳市华星光电半导体显示技术有限公司 | 柔性显示装置及其制备方法 |
| CN109166790B (zh) * | 2018-07-28 | 2022-04-22 | 西安交通大学 | 一种利用金属应力层剥离石墨烯上钙钛矿氧化物压电薄膜的方法 |
| US11355393B2 (en) | 2018-08-23 | 2022-06-07 | Massachusetts Institute Of Technology | Atomic precision control of wafer-scale two-dimensional materials |
| CN112740359B (zh) * | 2018-10-02 | 2022-07-12 | 株式会社菲尔尼克斯 | 半导体元件的制造方法及半导体基板 |
| WO2020072867A1 (en) * | 2018-10-05 | 2020-04-09 | Massachusetts Institute Of Technology | Methods, apparatus, and systems for remote epitaxy using stitched graphene |
| WO2020072871A1 (en) * | 2018-10-05 | 2020-04-09 | Massachusetts Institute Of Technology | Methods, apparatus, and systems for manufacturing gan templates via remote epitaxy |
| KR20210080440A (ko) * | 2018-10-16 | 2021-06-30 | 메사추세츠 인스티튜트 오브 테크놀로지 | 승화 sic 기판 상의 탄소 버퍼를 사용하는 에피택셜 성장 템플릿 |
| KR102232618B1 (ko) * | 2019-02-14 | 2021-03-29 | 전북대학교산학협력단 | 육방정계 질화붕소 박막의 제조방법 및 그로부터 제조된 박막을 구비하는 광전소자 |
| CN110010729A (zh) * | 2019-03-28 | 2019-07-12 | 王晓靁 | RGB全彩InGaN基LED及其制备方法 |
| US11289582B2 (en) * | 2019-05-23 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Single-crystal hexagonal boron nitride layer and method forming same |
| CN110164811A (zh) * | 2019-05-23 | 2019-08-23 | 芜湖启迪半导体有限公司 | 一种碳化硅衬底循环使用的方法和GaN HEMT器件的制作方法 |
| GB201910170D0 (en) | 2019-07-16 | 2019-08-28 | Crayonano As | Nanowire device |
| CN110491826B (zh) * | 2019-07-31 | 2020-09-29 | 北京工业大学 | 化合物半导体单晶薄膜层的转移方法及单晶GaAs-OI复合晶圆的制备方法 |
| WO2021020574A1 (ja) * | 2019-08-01 | 2021-02-04 | ローム株式会社 | 半導体基板及び半導体装置並びにそれらの製造方法 |
| WO2021046269A1 (en) | 2019-09-04 | 2021-03-11 | Massachusetts Institute Of Technology | Multi-regional epitaxial growth and related systems and articles |
| GB201913701D0 (en) * | 2019-09-23 | 2019-11-06 | Crayonano As | Composition of matter |
| CN111009602B (zh) * | 2020-01-03 | 2023-03-28 | 王晓靁 | 具有2d材料中介层的外延基板及制备方法和制作组件 |
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| WO2021158731A1 (en) * | 2020-02-04 | 2021-08-12 | Massachusetts Institute Of Technology | Fabrication of single-crystalline ionically conductive materials and related articles and systems |
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| JP7566926B2 (ja) * | 2020-04-20 | 2024-10-15 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | キャリア基板、キャリア基板の製造方法、およびキャリア基板から製品基板への転写層の転写方法 |
| JP7519072B2 (ja) * | 2020-05-01 | 2024-07-19 | 学校法人 名城大学 | 半導体の製造方法 |
| CN111682061B (zh) * | 2020-05-18 | 2021-12-31 | 华为技术有限公司 | 氮化物外延片及其制备方法和半导体器件 |
| CN112038220B (zh) * | 2020-08-31 | 2023-02-03 | 上海华力集成电路制造有限公司 | 晶圆键合工艺中改善晶圆边缘形变的方法 |
| WO2022123872A1 (ja) * | 2020-12-10 | 2022-06-16 | ローム株式会社 | 半導体基板及びその製造方法 |
| WO2022158078A1 (ja) * | 2021-01-25 | 2022-07-28 | ローム株式会社 | 半導体基板及びその製造方法 |
| CN112802559B (zh) * | 2021-01-29 | 2022-03-29 | 华南理工大学 | 一种基于热力学循环原理的快速调试水溶液中石墨烯-离子平均力势场的方法 |
| KR102607828B1 (ko) * | 2021-05-28 | 2023-11-29 | 아주대학교산학협력단 | 모놀리식 3차원 집적 회로 및 이의 제조 방법 |
| KR102590568B1 (ko) * | 2021-07-06 | 2023-10-18 | 한국과학기술연구원 | 이종 접합 반도체 기판, 그의 제조방법 및 그를 이용한 전자소자 |
| CN113644168B (zh) * | 2021-08-12 | 2024-04-23 | 王晓靁 | 一种RGB InGaN基micro LED的制作方法及其制作的器件 |
| KR102702223B1 (ko) * | 2021-10-27 | 2024-09-04 | 서울대학교산학협력단 | 표면이 기능화된 그래핀층을 이용한 박막의 제조방법 및 이를 이용하여 제조된 박막 |
| US20240047203A1 (en) * | 2022-08-04 | 2024-02-08 | Future Semiconductor Business, Inc | Monolithic remote epitaxy of compound semi conductors and 2d materials |
| KR20240027469A (ko) * | 2022-08-23 | 2024-03-04 | 한국광기술원 | 초미세 수직형 led 디스플레이의 제조 방법 |
| GB2624846A (en) * | 2022-09-02 | 2024-06-05 | Paragraf Ltd | A method of forming a semiconductor or dielectric layer on a substrate |
| CN115881839B (zh) * | 2022-11-22 | 2025-09-26 | 西安工程大学 | 柔性石墨烯/锗异质结的制备方法与转移方法 |
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| KR20240178429A (ko) | 2023-06-22 | 2024-12-31 | 광운대학교 산학협력단 | 전사지지층을 이용한 전사 가능한 3d 그래핀 제조 방법 및 이를 이용한 표면 증강 라만산란 센서 장치 |
| FR3159701A1 (fr) * | 2024-02-22 | 2025-08-29 | Soitec | Méthode de fabrication d’une structure empilée du type silicium contraint sur isolant en utilisant une technique de transfert de couche à base de matériau 2d |
| KR102826939B1 (ko) * | 2024-03-21 | 2025-06-27 | 세종대학교산학협력단 | 쇼트키 장벽 심자외선 포토다이오드 및 그 제조 방법 |
| CN118726934B (zh) * | 2024-06-19 | 2025-05-30 | 浙江大学 | 一种二维材料微图案阵列大面积印刷及转移方法 |
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| US20200043790A1 (en) | 2017-04-18 | 2020-02-06 | Massachusetts Institute Of Technology | Systems and methods for fabricating semiconductor devices via remote epitaxy |
| WO2018195412A1 (en) | 2017-04-21 | 2018-10-25 | Massachusetts Institute Of Technology | Systems and methods for fabricating photovoltaic devices via remote epitaxy |
| WO2019099461A1 (en) | 2017-11-14 | 2019-05-23 | Massachusetts Institute Of Technology | Epitaxial growth and transfer via patterned two-dimensional (2d) layers |
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2016
- 2016-09-08 EP EP22179687.3A patent/EP4105966A3/en active Pending
- 2016-09-08 JP JP2018512205A patent/JP6938468B2/ja active Active
- 2016-09-08 KR KR1020187010014A patent/KR102809444B1/ko active Active
- 2016-09-08 KR KR1020257015757A patent/KR20250076667A/ko active Pending
- 2016-09-08 WO PCT/US2016/050701 patent/WO2017044577A1/en not_active Ceased
- 2016-09-08 EP EP16845018.7A patent/EP3347914A4/en not_active Withdrawn
- 2016-09-08 CN CN202411323087.6A patent/CN119349566A/zh active Pending
- 2016-09-08 CN CN201680059078.8A patent/CN108140552A/zh active Pending
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2018
- 2018-03-07 US US15/914,295 patent/US10770289B2/en active Active
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