RU2018112510A - СПОСОБ ИЗГОТОВЛЕНИЯ КОМПОЗИТНОЙ ПОДЛОЖКИ SiC И СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВОЙ ПОДЛОЖКИ - Google Patents

СПОСОБ ИЗГОТОВЛЕНИЯ КОМПОЗИТНОЙ ПОДЛОЖКИ SiC И СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВОЙ ПОДЛОЖКИ Download PDF

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RU2018112510A
RU2018112510A RU2018112510A RU2018112510A RU2018112510A RU 2018112510 A RU2018112510 A RU 2018112510A RU 2018112510 A RU2018112510 A RU 2018112510A RU 2018112510 A RU2018112510 A RU 2018112510A RU 2018112510 A RU2018112510 A RU 2018112510A
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sic
layer
substrate
single crystal
manufacturing
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RU2720397C2 (ru
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Йосихиро КУБОТА
Содзи АКИЯМА
Хироюки НАГАСАВА
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Син-Эцу Кемикал Ко., Лтд.
Кусик Инк.
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Claims (11)

1. Способ изготовления композитной подложки SiC, имеющей монокристаллический слой SiC на поликристаллической подложке SiC, включающий:
обеспечение монокристаллического слоя SiC на одной поверхности удерживающей подложки, изготовленной из Si, для подготовки носителя монокристаллического слоя SiC, после этого
осаждение поликристаллического SiC на монокристаллический слой SiC с помощью физического или химического средства для подготовки слоистого материала SiC, при этом монокристаллический слой SiC и поликристаллическая подложка SiC послойно наносятся на удерживающую подложку, и после этого
удаление удерживающей подложки физическим и/или химическим способом.
2. Способ изготовления композитной подложки SiC по п.1, дополнительно включающий: перед осаждением поликристаллического SiC на монокристаллический слой SiC, вызывание деформации в носителе монокристаллического слоя SiC путем создания физического повреждения поверхности, расположенной напротив поверхности, несущей монокристаллический слой SiC удерживающей подложки в носителе монокристаллического слоя SiC.
3. Способ изготовления композитной подложки SiC по п.1 или 2, дополнительно включающий: после осаждения поликристаллического SiC на монокристаллический слой SiC, создание физического повреждения на поверхности, расположенной напротив прилегающей поверхности поликристаллической подложки SiC с монокристаллическим слоем SiC в слоистом материале SiC.
4. Способ изготовления композитной подложки SiC по п.2 или 3, в котором физическое повреждение создается по меньшей мере одним способом обработки, выбранным от пескоструйной обработки, шлифовки, резки, лазерной обработки и электроискровой обработки.
5. Способ изготовления композитной подложки SiC по любому из пп.1-4, в котором монокристаллический слой SiC обеспечивают на одной поверхности удерживающей подложки с промежуточным слоем, изготовленным из оксида кремния, нитрида кремния или оксинитрида кремния и размещенным между ними.
6. Способ изготовления композитной подложки SiC по любому из пп.1-5, в котором монокристаллическая тонкая пленка SiC, отслоенная от монокристаллической подложки SiC способом ионно-имплантированного отслоения, переносится на удерживающую подложку для обеспечения монокристаллического слоя SiC.
7. Способ изготовления композитной подложки SiC по любому из пп.1-6, в котором поликристаллический SiC осаждается на монокристаллический слой SiC путем химического осаждения из паровой фазы.
8. Способ изготовления полупроводниковой подложки, включающий: изготовление композитной подложки SiC способом изготовления композитной подложки SiC по любому из пп.1-7, и, с использованием композитной подложки SiC в качестве шаблона, гетероэпитаксиальное выращивание монокристалла SiC на монокристаллическом слое SiC для послойного нанесения монокристаллического SiC.
RU2018112510A 2015-09-11 2016-09-07 СПОСОБ ИЗГОТОВЛЕНИЯ КОМПОЗИТНОЙ ПОДЛОЖКИ SiC И СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВОЙ ПОДЛОЖКИ RU2720397C2 (ru)

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JP2015-179290 2015-09-11
JP2015179290A JP6572694B2 (ja) 2015-09-11 2015-09-11 ＳｉＣ複合基板の製造方法及び半導体基板の製造方法
PCT/JP2016/076297 WO2017043528A1 (ja) 2015-09-11 2016-09-07 ＳｉＣ複合基板の製造方法及び半導体基板の製造方法

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JP6572694B2 (ja) * 2015-09-11 2019-09-11 信越化学工業株式会社 ＳｉＣ複合基板の製造方法及び半導体基板の製造方法
DE102019110402A1 (de) 2018-05-25 2019-11-28 Infineon Technologies Ag Ein Verfahren zum Bearbeiten eines Halbleiterwafers, eine Halbleiter-Verbundstruktur und eine Stützstruktur für einen Halbleiterwafer
DE102019111377A1 (de) * 2018-05-28 2019-11-28 Infineon Technologies Ag Verfahren zum Verarbeiten eines Siliziumkarbid-Wafers und ein Siliziumkarbid-Halbleiterbauelement
JP7235456B2 (ja) * 2018-08-14 2023-03-08 株式会社ディスコ 半導体基板の加工方法
CN109678106B (zh) * 2018-11-13 2020-10-30 中国科学院上海微系统与信息技术研究所 一种硅基异质集成4H-SiC外延薄膜结构的制备方法
FR3099637B1 (fr) * 2019-08-01 2021-07-09 Soitec Silicon On Insulator procédé de fabrication d’unE structure composite comprenant une couche mince en Sic monocristallin sur un substrat support en sic polycristallin
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WO2022158085A1 (ja) * 2021-01-25 2022-07-28 ローム株式会社 半導体基板及びその製造方法、及び半導体装置
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