SG11202009528QA - Method for manufacturing a monocrystalline layer of diamond or iridium material, and substrate for epitaxically growing a monocrystalline layer of diamond or iridium material - Google Patents
Method for manufacturing a monocrystalline layer of diamond or iridium material, and substrate for epitaxically growing a monocrystalline layer of diamond or iridium materialInfo
- Publication number
- SG11202009528QA SG11202009528QA SG11202009528QA SG11202009528QA SG11202009528QA SG 11202009528Q A SG11202009528Q A SG 11202009528QA SG 11202009528Q A SG11202009528Q A SG 11202009528QA SG 11202009528Q A SG11202009528Q A SG 11202009528QA SG 11202009528Q A SG11202009528Q A SG 11202009528QA
- Authority
- SG
- Singapore
- Prior art keywords
- diamond
- monocrystalline layer
- iridium material
- epitaxically
- growing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1800255A FR3079535B1 (en) | 2018-03-28 | 2018-03-28 | METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL AND SUBSTRATE FOR GROWTH BY EPITAXIS OF A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL |
PCT/IB2019/000196 WO2019186262A1 (en) | 2018-03-28 | 2019-03-26 | Method for manufacturing a monocrystalline layer of diamond or iridium material, and substrate for epitaxically growing a monocrystalline layer of diamond or iridium material |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202009528QA true SG11202009528QA (en) | 2020-10-29 |
Family
ID=63079954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202009528QA SG11202009528QA (en) | 2018-03-28 | 2019-03-26 | Method for manufacturing a monocrystalline layer of diamond or iridium material, and substrate for epitaxically growing a monocrystalline layer of diamond or iridium material |
Country Status (8)
Country | Link |
---|---|
US (1) | US11935743B2 (en) |
EP (1) | EP3775329A1 (en) |
JP (1) | JP7408893B2 (en) |
KR (1) | KR102654904B1 (en) |
CN (1) | CN111936676A (en) |
FR (1) | FR3079535B1 (en) |
SG (1) | SG11202009528QA (en) |
WO (1) | WO2019186262A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3079531B1 (en) * | 2018-03-28 | 2022-03-18 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF PZT MATERIAL AND SUBSTRATE FOR GROWTH BY EPITAXIS OF A MONOCRYSTALLINE LAYER OF PZT MATERIAL |
CN113373512B (en) * | 2021-05-24 | 2022-02-11 | 北京科技大学 | Single crystal diamond epitaxial growth method based on iridium-graphene structured buffer layer |
CN113832541B (en) * | 2021-09-29 | 2024-02-09 | 太原理工大学 | Preparation method of composite substrate for epitaxial growth of large-size single crystal diamond |
JP2023116122A (en) * | 2022-02-09 | 2023-08-22 | 信越化学工業株式会社 | Base substrate, single crystal diamond multilayer substrate and method for manufacturing them |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002124125A (en) | 2000-10-17 | 2002-04-26 | Masaru Hiyamizu | Folding screen and single leaf screen with lighting device |
US8507361B2 (en) * | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
US6562127B1 (en) * | 2002-01-16 | 2003-05-13 | The United States Of America As Represented By The Secretary Of The Navy | Method of making mosaic array of thin semiconductor material of large substrates |
JP4016102B2 (en) * | 2003-01-17 | 2007-12-05 | 独立行政法人産業技術総合研究所 | Method for producing diamond crystal thin film by pulsed laser deposition and thin film produced by the same method |
DE10320133B4 (en) | 2003-05-06 | 2011-02-10 | Universität Augsburg | Process for the production of monocrystalline or quasi-monocrystalline diamond layers and monocrystalline or quasi-monocrystalline diamond layer arranged on a body |
JP5468528B2 (en) | 2010-06-28 | 2014-04-09 | 信越化学工業株式会社 | SUBSTRATE FOR GROWING SINGLE CRYSTAL DIAMOND, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE |
US9064789B2 (en) * | 2013-08-12 | 2015-06-23 | International Business Machines Corporation | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates |
WO2016114382A1 (en) | 2015-01-16 | 2016-07-21 | 住友電気工業株式会社 | Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing composite semiconductor substrate, composite semiconductor substrate, and semiconductor bonding substrate |
JP7017299B2 (en) | 2015-07-30 | 2022-02-08 | 信越化学工業株式会社 | Manufacturing method of diamond electronic element and diamond electronic element |
CN107268076A (en) | 2017-07-28 | 2017-10-20 | 西安交通大学 | A kind of method based on heteroepitaxial growth single-crystal diamond |
-
2018
- 2018-03-28 FR FR1800255A patent/FR3079535B1/en active Active
-
2019
- 2019-03-26 CN CN201980021528.8A patent/CN111936676A/en active Pending
- 2019-03-26 KR KR1020207030291A patent/KR102654904B1/en active IP Right Grant
- 2019-03-26 WO PCT/IB2019/000196 patent/WO2019186262A1/en unknown
- 2019-03-26 JP JP2020549793A patent/JP7408893B2/en active Active
- 2019-03-26 US US17/042,728 patent/US11935743B2/en active Active
- 2019-03-26 SG SG11202009528QA patent/SG11202009528QA/en unknown
- 2019-03-26 EP EP19721378.8A patent/EP3775329A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20200136437A (en) | 2020-12-07 |
US11935743B2 (en) | 2024-03-19 |
EP3775329A1 (en) | 2021-02-17 |
WO2019186262A1 (en) | 2019-10-03 |
FR3079535A1 (en) | 2019-10-04 |
JP2021518322A (en) | 2021-08-02 |
US20210020434A1 (en) | 2021-01-21 |
CN111936676A (en) | 2020-11-13 |
JP7408893B2 (en) | 2024-01-09 |
KR102654904B1 (en) | 2024-04-04 |
FR3079535B1 (en) | 2022-03-18 |
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