RU2018113268A - КОМПОЗИТНАЯ SiC-ПОДЛОЖКА И СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ - Google Patents

КОМПОЗИТНАЯ SiC-ПОДЛОЖКА И СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ Download PDF

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RU2018113268A
RU2018113268A RU2018113268A RU2018113268A RU2018113268A RU 2018113268 A RU2018113268 A RU 2018113268A RU 2018113268 A RU2018113268 A RU 2018113268A RU 2018113268 A RU2018113268 A RU 2018113268A RU 2018113268 A RU2018113268 A RU 2018113268A
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sic
substrate
crystal sic
crystal
layer
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Йосихиро КУБОТА
Содзи АКИЯМА
Хироюки НАГАСАВА
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Син-Эцу Кемикал Ко., Лтд.
Кусик Инк.
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Claims (16)

1. Композитная SiC-подложка, включающая подложку из поликристаллического SiC и слой монокристаллического SiC на ней, причем вся поверхность раздела или ее часть подложки из поликристаллического SiC с примыкающим слоем монокристаллического SiC представляет собой несогласованную поверхность раздела, то есть, кристаллические решетки на которой не совпадают, слой монокристаллического SiC имеет гладкую переднюю поверхность и более шероховатую поверхность на стороне поверхности раздела с подложкой из поликристаллического SiC, чем передняя поверхность, и плотноупакованные плоскости кристаллов поликристаллического SiC в подложке из поликристаллического SiC беспорядочно ориентированы относительно направления перпендикуляра к передней поверхности слоя монокристаллического SiC.
2. Композитная SiC-подложка по п.1, в которой шероховатая поверхность, которую слой монокристаллического SiC имеет на стороне поверхности раздела с подложкой из поликристаллического SiC, составлена наклонными поверхностными сегментами, которые беспорядочно ориентированы относительно направления перпендикуляра к передней поверхности слоя монокристаллического SiC.
3. Композитная SiC-подложка по п. 1 или 2, в которой подложка из поликристаллического SiC представляет собой образованную химическим осаждением из паровой фазы пленку.
4. Композитная SiC-подложка по любому из пп. 1-3, в которой поликристаллический SiC в подложке из поликристаллического SiC находится в форме кубических кристаллов, имеющих плотноупакованную плоскость, которая представляет собой {111}-плоскость.
5. Способ изготовления композитной SiC-подложки, включающей подложку из поликристаллического SiC и слой монокристаллического SiC на ней, включающий стадии, в которых:
формируют тонкую пленку монокристаллического SiC на одной основной поверхности несущей подложки,
механически обрабатывают поверхность тонкой пленки монокристаллического SiC для придания шероховатости, и удаляют дефекты, обусловленные механической обработкой, с образованием слоя монокристаллического SiC, имеющего поверхность, которая является более шероховатой, чем поверхность слоя, смежного с несущей подложкой, причем шероховатая поверхность составлена наклонными поверхностными сегментами, которые беспорядочно ориентированы относительно направления перпендикуляра к поверхности слоя, смежного с несущей подложкой,
осаждают поликристаллический SiC на шероховатую поверхность слоя монокристаллического SiC способом химического осаждения из паровой фазы, с образованием тем самым подложки из поликристаллического SiC, в которой плотноупакованные плоскости кристаллов поликристаллического SiC беспорядочно ориентированы относительно направления перпендикуляра к поверхности слоя монокристаллического SiC, смежного с несущей подложкой, и
после этого физически и/или химически удаляют несущую подложку.
6. Способ по п.5, в котором стадия обработки поверхности тонкой пленки монокристаллического SiC включает полирование поверхности тонкой пленки монокристаллического SiC в произвольных направлениях с использованием алмазных абразивных зерен.
7. Способ по п. 5 или 6, в котором несущая подложка сформирована из поликристаллического или монокристаллического кремния.
8. Способ по любому из пп. 5-7, в котором стадия формирования тонкой пленки монокристаллического SiC на несущей подложке включает отделение тонкой пленки монокристаллического SiC от подложки из монокристаллического SiC способом разделения ионной имплантацией и перенос тонкой пленки монокристаллического SiC на несущую подложку.
9. Способ по любому из пп. 5-7, в котором стадия формирования тонкой пленки монокристаллического SiC на несущей подложке включает гетероэпитаксиальное выращивание SiС на несущей подложке.
10. Способ по любому из пп. 5-9, в котором изготавливают носитель слоя монокристаллического SiC, имеющий слои монокристаллического SiC на обеих поверхностях несущей подложки, формируют подложку из поликристаллического SiC на шероховатой поверхности каждого слоя монокристаллического SiC, и после этого физически и/или химически удаляют несущую подложку.
11. Способ по любому из пп. 5-9, в котором изготавливают носитель слоя монокристаллического SiC, имеющий слой монокристаллического SiC только на передней поверхности несущей подложки, формируют подложку из поликристаллического SiC на шероховатой поверхности слоя монокристаллического SiC и задней поверхности несущей подложки, соответственно, и после этого физически и/или химически удаляют несущую подложку.
12. Способ по любому из пп. 5-9, в котором изготавливают два носителя слоя монокристаллического SiC, причем каждый носитель имеет слой монокристаллического SiC только на передней поверхности несущей подложки, соединяют между собой задние поверхности несущих подложек носителей слоя монокристаллического SiC, формируют подложки из поликристаллического SiC на шероховатых поверхностях слоев монокристаллического SiC на передней и задней поверхностях связанной подложки, соответственно, затем сборный узел разделяют по поверхности раздела в зоне связывания между задними поверхностями несущих подложек, и одновременно или последовательно физически и/или химически удаляют несущие подложки.
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