JP7372312B2 - SiC複合基板及び半導体デバイス用複合基板 - Google Patents
SiC複合基板及び半導体デバイス用複合基板 Download PDFInfo
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Description
SiCがc軸方向及びa軸方向ともに配向している二軸配向SiC層と、
前記二軸配向SiC層の一面側に設けられるSiC多結晶層と、
を備えた、SiC複合基板であって、
前記SiC複合基板中に気孔が存在する、SiC複合基板が提供される。
前記SiC複合基板と、
前記SiC複合基板の前記二軸配向SiC層上に設けられる半導体デバイス用機能層と、
を備えた、半導体デバイス用複合基板が提供される。
図1に本発明のSiC複合基板の一例を模式的に示す。図1に示されるように、SiC複合基板10は、二軸配向SiC層12及びSiC多結晶層14を含む。二軸配向SiC層12は、SiCがc軸方向及びa軸方向ともに配向している層である。SiC多結晶層14は、二軸配向SiC層12の一面側に設けられる。そして、SiC複合基板10中に気孔(図示せず)が存在する。このように、二軸配向SiC層12とSiC多結晶層14とを備えたSiC複合基板10において、SiC複合基板10中に気孔を存在させることで、研削及び研磨等の加工を施しても、基板の層間剥離、割れ及びクラックが生じにくくすることができる。
本発明のSiC複合基板は半導体デバイス用複合基板に組み込まれるのが好ましい。したがって、本発明の好ましい態様によれば、図2に示されるように、SiC複合基板10と、SiC複合基板10の二軸配向SiC層12上に設けられる半導体デバイス用機能層16とを備えた、半導体デバイス用複合基板18が提供される。半導体デバイスの例としては、ショットキーバリアダイオード(SBD)やIGBT、MOSFET等が挙げられる。半導体デバイス用機能層16及び半導体デバイス用複合基板18の構造や作製方法は、採用する半導体デバイスの種類に応じて、公知のものを採用すればよく、特に限定されない。
本発明のSiC複合基板は様々な製造方法により製造することができる。具体的には以下のとおりである。
(1)SiC複合基板の作製
(1a)配向前駆体の作製
原料粉体として市販の微細β-SiC粉末(体積基準D50:0.7μm)、基板として市販のSiC単結晶基板(n型4H-SiC、直径50.8mm(2インチ)、Si面、(0001)面、オフ角4°、厚み0.35mm、オリフラなし)を用いて図3に示すエアロゾルデポジション(AD)装置によりSiC単結晶基板上にAD膜を形成した。
AD膜を形成したSiC基板をAD装置から取り出し、アルゴン雰囲気中で2400℃にて5時間アニールした。
得られたSiC基板の単結晶部を研削除去して二軸配向SiC層12の表面を露出させ、露出した表面に対しダイヤモンド砥粒を用いて研磨加工した後、CMP(化学機械研磨)仕上げをした。こうしてSiC複合基板10を得た。このとき、研削及び研磨作業による基板の層間剥離、割れ及びクラックは生じなかった。
こうして得られたSiC複合基板10に対して以下の各種評価を行った。
SiC複合基板10の中央部断面をダイヤモンド砥粒によって鏡面研磨した後、CMP(化学機械研磨)仕上げとした。得られた断面を走査型電子顕微鏡(日立ハイテクノロジーズ製、SU-5000)にて撮影した。このとき、図4に示されるように、結晶方位の違いによるチャネリングコントラスト差により二軸配向SiC層12とSiC多結晶層14とを容易に見分けることができた。
上記断面観察において、二軸配向SiC層12とSiC多結晶層14を含む反射電子像を500倍で20視野分(1視野のサイズ:178μm×256μm)撮影し、各層について、気孔数及び気孔径とを測定した。各層の気孔数は、20視野分のSiC多結晶層14又は二軸配向SiC層12の気孔数を目視で数え、SiC多結晶層14又は二軸配向SiC層12の合計断面積で除することによって算出することで、単位断面積1cm2当たりの気孔数として評価した。各層の気孔径は、20視野分の各気孔の最長辺長さの平均値を1.5倍した数値とした。結果は表1に示されるとおりであった。
上記(1)で作製したSiC複合基板10を評価サンプルとした。ニッケル製のるつぼに、評価サンプルをKOH結晶と共に入れ、500℃で10分間、電気炉でエッチング処理を行った。エッチング処理後の評価サンプルを洗浄し、表面を光学顕微鏡にて観察し、ピットの数を数えた。具体的には、評価サンプル表面の任意の箇所の部位について、縦2.3mm×横3.6mmの視野を倍率50倍で100枚分撮影してピットの総数を数え、数えたピットの総数をトータル面積である8.05cm2で除することにより欠陥密度を算出した。結果は表1に示されるとおりであった。
EBSD(Electron Back Scatter Diffraction Patterns)法を用いて、二軸配向SiC層12の表面(板面)、又は板面と直交する断面の逆極点図マッピングを測定したところ、傾斜角度分布は略法線方向及び略板面方向ともに0.5°以下であったため、二軸配向しているものと判断した。
上記(1a)のAD成膜条件において、ノズルの交換を行わず、長辺5mm×短辺0.4mmのスリットを用いて600サイクル分成膜を行い、約60μmのAD膜を得たこと以外は例1と同様にして実験を行った。得られた結果を表1に示した。
上記(1a)のAD成膜条件において、AD膜1の成膜時のノズルスリットサイズを、長辺5mm×短辺0.1mmに、AD膜2の成膜時のノズルスリットサイズを、長辺5mm×短辺0.2mmとしたこと以外は例1と同様に実験を行った。得られた結果を表1に示した。
Claims (4)
- SiCがc軸方向及びa軸方向ともに配向している二軸配向SiC層と、
前記二軸配向SiC層の一面側に設けられるSiC多結晶層と、
を備えた、SiC複合基板であって、
前記SiC複合基板中に気孔が存在し、
前記SiC多結晶層中に気孔が存在し、かつ、前記SiC多結晶層中の単位断面積1cm 2 当たりの気孔数が1×104~1×107個/cm2であり、
前記二軸配向SiC層中にも気孔が存在し、かつ、前記二軸配向SiC層中の単位断面積1cm 2 当たりの気孔数が4.2×105~5.6×105個/cm2である、SiC複合基板。 - 前記SiC多結晶層中の単位断面積1cm2当たり気孔数が、前記二軸配向SiC層中の単位断面積1cm2当たりの気孔数よりも多い、請求項1に記載のSiC複合基板。
- 前記二軸配向SiC層が表面に1.0×101/cm2以下の欠陥密度を有する、請求項1又は2に記載のSiC複合基板。
- 請求項1~3のいずれか一項に記載のSiC複合基板と、
前記SiC複合基板の前記二軸配向SiC層上に設けられる半導体デバイス用機能層と、
を備えた、半導体デバイス用複合基板。
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