RU2018113432A - Способ изготовления составной подложки из sic - Google Patents

Способ изготовления составной подложки из sic Download PDF

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RU2018113432A
RU2018113432A RU2018113432A RU2018113432A RU2018113432A RU 2018113432 A RU2018113432 A RU 2018113432A RU 2018113432 A RU2018113432 A RU 2018113432A RU 2018113432 A RU2018113432 A RU 2018113432A RU 2018113432 A RU2018113432 A RU 2018113432A
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sic
substrate
layer
composite
manufacturing
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RU2018113432A
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RU2721306C2 (ru
RU2018113432A3 (ru
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Содзи АКИЯМА
Йосихиро КУБОТА
Хироюки НАГАСАВА
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Син-Эцу Кемикал Ко., Лтд.
Кусик Инк.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2011—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline insulating material, e.g. sapphire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Materials Engineering (AREA)

Claims (6)

1. Способ изготовления составной подложки из SiC, содержащий монокристаллический слой SiC на поликристаллической подложке из SiC, причем способ содержит следующие этапы в таком порядке: обеспечение монокристаллического слоя SiC на передней стороне опорной подложки, которая выполнена из кремния и имеет пленку оксида кремния на передней и задней своих сторонах, с получением носителя монокристаллического слоя SiC; удаление некоторой или всей толщины пленки оксида кремния по некоторой области или всей задней стороне опорной подложки в носителе монокристаллического слоя SiC с тем, чтобы придать коробление носителю монокристаллического слоя SiC; осаждение поликристаллического SiC на монокристаллический слой SiC путем химического осаждения из паровой фазы с образованием поликристаллической подложки из SiC; и физическое и/или химическое удаление опорной подложки.
2. Способ изготовления составной подложки из SiC по п. 1, в котором пленка оксида кремния опорной подложки представляет собой термооксидную пленку.
3. Способ изготовления составной подложки из SiC по п. 1 или 2, в котором некоторую часть или всю пленку оксида кремния по всей задней стороне опорной подложки в носителе монокристаллического слоя SiC удаляют химическим травлением.
4. Способ изготовления составной подложки из SiC по любому из пп. 1-3, в котором монокристаллический слой SiC обеспечивают путем перенесения на опорную подложку монокристаллической тонкой пленки SiC, отслоенной от монокристаллической подложки из SiC путем расслаивания с помощью ионной имплантации.
5. Способ изготовления составной подложки из SiC по любому из пп. 1-3, в котором монокристаллический слой SiC обеспечивают путем гетероэпитаксиального выращивания SiC на опорной подложке.
6. Способ изготовления составной подложки из SiC по любому из пп. 1-5, в котором составная подложка из SiC имеет величину прогиба, которая задана в диапазоне от -50 мкм до +50 мкм.
RU2018113432A 2015-09-15 2016-09-09 Способ изготовления составной подложки из sic RU2721306C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015181908A JP6515757B2 (ja) 2015-09-15 2015-09-15 ＳｉＣ複合基板の製造方法
JP2015-181908 2015-09-15
PCT/JP2016/076537 WO2017047508A1 (ja) 2015-09-15 2016-09-09 ＳｉＣ複合基板の製造方法

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RU2018113432A3 RU2018113432A3 (ru) 2020-02-20
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US (1) US10431460B2 (ru)
EP (1) EP3352197B1 (ru)
JP (1) JP6515757B2 (ru)
CN (1) CN108140541B (ru)
RU (1) RU2721306C2 (ru)
TW (1) TWI738665B (ru)
WO (1) WO2017047508A1 (ru)

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Publication number Publication date
CN108140541A (zh) 2018-06-08
TW201724178A (zh) 2017-07-01
US20190157087A1 (en) 2019-05-23
TWI738665B (zh) 2021-09-11
CN108140541B (zh) 2022-11-11
EP3352197B1 (en) 2020-07-29
JP6515757B2 (ja) 2019-05-22
RU2721306C2 (ru) 2020-05-18
JP2017059626A (ja) 2017-03-23
US10431460B2 (en) 2019-10-01
EP3352197A1 (en) 2018-07-25
RU2018113432A3 (ru) 2020-02-20
WO2017047508A1 (ja) 2017-03-23
EP3352197A4 (en) 2019-05-01

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