JP2017059626A - SiC複合基板の製造方法 - Google Patents
SiC複合基板の製造方法 Download PDFInfo
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Abstract
Description
〔1〕 多結晶SiC基板上に単結晶SiC層を有するSiC複合基板の製造方法であって、表裏面に酸化珪素膜を有するSiからなる保持基板の表面に単結晶SiC層を設けて単結晶SiC層担持体を作製した後、該単結晶SiC層担持体における保持基板の裏面の一部領域又は全面の酸化珪素膜の厚みの一部又は全部を除去して単結晶SiC層担持体に反りを付与し、次いで単結晶SiC層上に化学気相成長法により多結晶SiCを堆積して多結晶SiC基板を形成し、その後に上記保持基板を物理的及び/又は化学的に除去することを特徴とするSiC複合基板の製造方法。
〔2〕 上記保持基板の酸化珪素膜は熱酸化膜であることを特徴とする〔1〕記載のSiC複合基板の製造方法。
〔3〕 上記単結晶SiC層担持体における保持基板の裏面全面の酸化珪素膜の一部又は全部を化学的にエッチングして除去することを特徴とする〔1〕又は〔2〕記載のSiC複合基板の製造方法。
〔4〕 イオン注入剥離法により単結晶SiC基板から剥離させた単結晶SiC薄膜を上記保持基板上に転写して上記単結晶SiC層を設けることを特徴とする〔1〕〜〔3〕のいずれかに記載のSiC複合基板の製造方法。
〔5〕 上記保持基板上にSiCをヘテロエピタキシャル成長させて上記単結晶SiC層を設けることを特徴とする〔1〕〜〔3〕のいずれかに記載のSiC複合基板の製造方法。
〔6〕 SiC複合基板のBow量を−50μm以上50μm以下とすることを特徴とする〔1〕〜〔5〕のいずれかに記載のSiC複合基板の製造方法。
始めに、保持基板21に貼り合わせをする単結晶SiC基板12sを用意する。ここで、単結晶SiC基板12sは、結晶構造が4H−SiC、6H−SiC、3C−SiCのものから選択をすることが好ましい。単結晶SiC基板12s及び後述する保持基板21の大きさは、半導体素子の製造や窒化ガリウム、ダイヤモンド、ナノカーボン膜の成長に必要な大きさやコスト等から設定をする。また、単結晶SiC基板12sの厚さは、SEMI規格又はJEIDA規格の基板厚さ近傍のものがハンドリングの面から好ましい。なお、単結晶SiC基板12sとして、市販のもの、例えばパワーデバイス向けに市販されている単結晶SiCウエハを用いればよく、その表面がCMP(Chemical Mechanical Polishing(or Planarization))処理で仕上げ研磨された、表面が平坦かつ平滑なものを用いることが好ましい。
次に、Siからなる保持基板21を用意する。例えば、多結晶Siウエハ又は単結晶Siウエハを用いるとよい。
ここで、上記保持基板の酸化珪素膜は熱酸化膜であることが好ましい。その酸化珪素膜の厚さは、表裏面で同じ厚みであって、該酸化珪素膜の除去によって単結晶SiC層担持体の反りが調整可能な程度の厚みであればよく、例えば500〜2,000nmであることが好ましい。
次に、単結晶SiC基板12sの薄膜12a形成面に水素イオン等を注入してイオン注入領域12iを形成する(図1(c))。
続いて、単結晶SiC基板12sの薄膜12a形成面と保持基板21の表面側の酸化珪素膜21a形成面とを(表面同士を)表面活性化処理を施して貼り合わせる。表面活性化処理としてはプラズマ活性化処理、真空イオンビーム処理又はオゾン水への浸漬処理を行うとよい。
貼り合わせ基板13について、イオン注入した部分に熱的エネルギー又は機械的エネルギーを付与してイオン注入領域12iで単結晶SiC基板12sから剥離した単結晶SiC薄膜を保持基板21上に転写する。
次に、単結晶SiC層担持体14における保持基板21の単結晶SiC層担持面とは反対面(裏面、図中下側の面)の一部領域又は全面の酸化珪素膜21aの厚みの一部又は全部を除去して単結晶SiC層担持体14’に反りを付与する(図1(f))。図中、14’は酸化珪素膜21a除去後の単結晶SiC層担持体であり、21a’は除去後の酸化珪素膜である。
次に、得られた単結晶SiC層担持体14’を用いて、化学気相成長法により単結晶SiC層12上に多結晶SiCを堆積して多結晶SiC基板11を形成してSiC積層体15を得る(図1(g))。ここでのSiC積層体15は、保持基板21上に酸化珪素膜21a’、薄膜12a、単結晶SiC層12、多結晶SiC基板11をこの順番で積層した構成となっている。
次に、工程7で得られたSiC積層体15における保持基板21を物理的及び/又は化学的に除去して、SiC複合基板10を得る(図1(h))。このとき、保持基板21がシリコンからなるため、例えばまず保持基板21の大部分を研削加工により除去し、次いで残りの保持基板21、酸化珪素膜21a’及び薄膜12aをフッ硝酸溶液により選択的にエッチング除去することが好ましい。
必要に応じて、SiC複合基板10の単結晶SiC層12上にSiCエピタキシャル層12’を形成するとよい(図1(i))。これにより、単結晶SiC層12がパワー半導体デバイスの活性層として用いるには薄すぎる場合でも、所定厚さのSiCエピタキシャル層12’を形成するのでパワー半導体の製造に適応したSiC複合基板を得ることが可能となる。
本試験例では、上述した本発明の実施形態の手順に従い、以下のようにしてSiC複合基板を作製した。
まず、単結晶SiC基板12sとして直径3インチφの4H−SiC単結晶ウエハを用意し、これの片面に薄膜12aとしてCVD法で厚さ200nmの酸化珪素膜(SiO2膜)を成膜し、研磨を施した後(図1(a))、この薄膜12a形成面にH+イオンをエネルギー100keV、ドーズ量8.8×1016atoms/cm2でイオン注入した(図1(c))。
また、保持基板21として、直径3インチφ、厚さ400μmの単結晶Siウエハを用意し、熱酸化法によりその表裏面に厚さ1.5μmの酸化珪素膜21aを形成した(図1(b))。
次いで、単結晶SiC基板12sの酸化珪素膜形成面、保持基板21の表面側の酸化珪素膜21a形成面についてそれぞれプラズマ活性化処理を施した後、両者の酸化珪素膜形成面同士(表面同士)を貼り合わせて貼り合わせ基板13を作製した(図1(d))。
次に、貼り合わせ基板13について750℃、12時間の熱処理を加えた後、室温に戻して機械的剥離法により単結晶SiC基板12sのイオン注入領域12iに機械的衝撃を加えて該単結晶SiC基板12sから単結晶SiC薄膜を剥離させ、保持基板21に転写した。この単結晶SiC薄膜表面のダメージ層除去後、表面研磨し、保持基板21上に酸化珪素膜を介して厚さ600nmmの4H−SiCの単結晶SiC層12を担持する単結晶SiC層担持体14を得た(図1(e))。この単結晶SiC層担持体14を同一条件で複数枚作製した。
続いて、このSiC積層体15の保持基板21について固定砥石で研削した。詳しくは、固定砥石の番手を#1000、#2500、#4000の順で順次目の細かい砥石に変えて、保持基板21がほとんどなくなる状態まで研削した。次いで、酸化珪素膜21a’、薄膜12aをHF水溶液でエッチングして除去して、多結晶SiC基板11上に表面が極めて清浄な単結晶SiC層12を有するSiC複合基板10を得た(図1(h))。
11 多結晶SiC基板
12 単結晶SiC層
12a 薄膜(介在層)
12i イオン注入領域
12s 単結晶SiC基板
12’ SiCエピタキシャル層
13 貼り合わせ基板
14、14’ 単結晶SiC層担持体
15 SiC積層体
21 保持基板
21a、21a’ 酸化珪素膜
Claims (6)
- 多結晶SiC基板上に単結晶SiC層を有するSiC複合基板の製造方法であって、表裏面に酸化珪素膜を有するSiからなる保持基板の表面に単結晶SiC層を設けて単結晶SiC層担持体を作製した後、該単結晶SiC層担持体における保持基板の裏面の一部領域又は全面の酸化珪素膜の厚みの一部又は全部を除去して単結晶SiC層担持体に反りを付与し、次いで単結晶SiC層上に化学気相成長法により多結晶SiCを堆積して多結晶SiC基板を形成し、その後に上記保持基板を物理的及び/又は化学的に除去することを特徴とするSiC複合基板の製造方法。
- 上記保持基板の酸化珪素膜は熱酸化膜であることを特徴とする請求項1記載のSiC複合基板の製造方法。
- 上記単結晶SiC層担持体における保持基板の裏面全面の酸化珪素膜の一部又は全部を化学的にエッチングして除去することを特徴とする請求項1又は2記載のSiC複合基板の製造方法。
- イオン注入剥離法により単結晶SiC基板から剥離させた単結晶SiC薄膜を上記保持基板上に転写して上記単結晶SiC層を設けることを特徴とする請求項1〜3のいずれか1項記載のSiC複合基板の製造方法。
- 上記保持基板上にSiCをヘテロエピタキシャル成長させて上記単結晶SiC層を設けることを特徴とする請求項1〜3のいずれか1項記載のSiC複合基板の製造方法。
- SiC複合基板のBow量を−50μm以上50μm以下とすることを特徴とする請求項1〜5のいずれか1項記載のSiC複合基板の製造方法。
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