JP2013222893A5 - - Google Patents

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Publication number
JP2013222893A5
JP2013222893A5 JP2012094840A JP2012094840A JP2013222893A5 JP 2013222893 A5 JP2013222893 A5 JP 2013222893A5 JP 2012094840 A JP2012094840 A JP 2012094840A JP 2012094840 A JP2012094840 A JP 2012094840A JP 2013222893 A5 JP2013222893 A5 JP 2013222893A5
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JP
Japan
Prior art keywords
silicon
wafer
resistivity
silicon wafer
czochralski
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JP2012094840A
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English (en)
Japanese (ja)
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JP6057534B2 (ja
JP2013222893A (ja
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Priority to JP2012094840A priority Critical patent/JP6057534B2/ja
Priority claimed from JP2012094840A external-priority patent/JP6057534B2/ja
Priority to PCT/JP2013/001304 priority patent/WO2013157183A1/ja
Priority to TW102111878A priority patent/TWI555061B/zh
Publication of JP2013222893A publication Critical patent/JP2013222893A/ja
Publication of JP2013222893A5 publication Critical patent/JP2013222893A5/ja
Application granted granted Critical
Publication of JP6057534B2 publication Critical patent/JP6057534B2/ja
Active legal-status Critical Current
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JP2012094840A 2012-04-18 2012-04-18 半導体装置の製造方法 Active JP6057534B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012094840A JP6057534B2 (ja) 2012-04-18 2012-04-18 半導体装置の製造方法
PCT/JP2013/001304 WO2013157183A1 (ja) 2012-04-18 2013-03-04 半導体装置の製造方法、及び半導体装置
TW102111878A TWI555061B (zh) 2012-04-18 2013-04-02 Semiconductor device manufacturing method and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012094840A JP6057534B2 (ja) 2012-04-18 2012-04-18 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013222893A JP2013222893A (ja) 2013-10-28
JP2013222893A5 true JP2013222893A5 (ru) 2014-05-22
JP6057534B2 JP6057534B2 (ja) 2017-01-11

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ID=49593646

Family Applications (1)

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JP2012094840A Active JP6057534B2 (ja) 2012-04-18 2012-04-18 半導体装置の製造方法

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JP (1) JP6057534B2 (ru)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015088760A (ja) 2013-10-28 2015-05-07 株式会社リコー 画像投影装置、画像投影システム、制御方法、及びプログラム
JP6099553B2 (ja) * 2013-12-18 2017-03-22 住重試験検査株式会社 半導体装置の製造方法
JP6557134B2 (ja) * 2015-12-24 2019-08-07 住重アテックス株式会社 半導体装置および半導体装置の製造方法
JP6485406B2 (ja) * 2016-05-31 2019-03-20 株式会社Sumco Ｓｏｉウェーハの製造方法
DE102019112773B4 (de) * 2019-05-15 2023-11-30 mi2-factory GmbH Vorrichtung und Verfahren zur Implantation von Teilchen in ein Substrat

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335745A (ja) * 1994-06-14 1995-12-22 Matsushita Electric Works Ltd 誘電体分離型半導体装置
JPH08167646A (ja) * 1994-12-13 1996-06-25 Matsushita Electric Ind Co Ltd Ｓｉｍｏｘ基板、ｓｉｍｏｘ基板の製造方法及び半導体装置の製造方法
JP2996169B2 (ja) * 1996-03-07 1999-12-27 松下電器産業株式会社 高周波半導体装置および高周波通信機器
JP3942264B2 (ja) * 1998-03-11 2007-07-11 富士通株式会社 半導体基板上に形成されるインダクタンス素子
JP2000022085A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 半導体装置及びその製造方法
JP4033657B2 (ja) * 2001-10-09 2008-01-16 シャープ株式会社 半導体装置の製造方法
JP2006237216A (ja) * 2005-02-24 2006-09-07 Mitsubishi Electric Corp 半導体装置およびそれが組み込まれた半導体装置集合体
JP2008244042A (ja) * 2007-03-27 2008-10-09 Denso Corp 半導体基板およびその製造方法
JP2010219258A (ja) * 2009-03-17 2010-09-30 Toyota Motor Corp 半導体装置

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