JP6938468B2 - グラフェンベースの層転写のためのシステム及び方法 - Google Patents

グラフェンベースの層転写のためのシステム及び方法 Download PDF

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JP6938468B2
JP6938468B2 JP2018512205A JP2018512205A JP6938468B2 JP 6938468 B2 JP6938468 B2 JP 6938468B2 JP 2018512205 A JP2018512205 A JP 2018512205A JP 2018512205 A JP2018512205 A JP 2018512205A JP 6938468 B2 JP6938468 B2 JP 6938468B2
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graphene
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JP2018535536A (ja
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ジーファン キム
ジーファン キム
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Massachusetts Institute of Technology
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • C—CHEMISTRY; METALLURGY
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    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
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    • H01L21/02367—Substrates
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    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
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    • H01L21/02612—Formation types
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    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
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    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/01—Manufacture or treatment
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    • H10H20/018—Bonding of wafers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2018512205A 2015-09-08 2016-09-08 グラフェンベースの層転写のためのシステム及び方法 Active JP6938468B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201562215223P 2015-09-08 2015-09-08
US62/215,223 2015-09-08
US201662335784P 2016-05-13 2016-05-13
US62/335,784 2016-05-13
US201662361717P 2016-07-13 2016-07-13
US62/361,717 2016-07-13
PCT/US2016/050701 WO2017044577A1 (en) 2015-09-08 2016-09-08 Systems and methods for graphene based layer transfer

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JP2018535536A JP2018535536A (ja) 2018-11-29
JP2018535536A5 JP2018535536A5 (enExample) 2019-11-21
JP6938468B2 true JP6938468B2 (ja) 2021-09-22

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US (1) US10770289B2 (enExample)
EP (2) EP4105966A3 (enExample)
JP (1) JP6938468B2 (enExample)
KR (2) KR102809444B1 (enExample)
CN (2) CN119349566A (enExample)
WO (1) WO2017044577A1 (enExample)

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