CN119349566A - 基于石墨烯的层转移的系统和方法 - Google Patents

基于石墨烯的层转移的系统和方法 Download PDF

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CN119349566A
CN119349566A CN202411323087.6A CN202411323087A CN119349566A CN 119349566 A CN119349566 A CN 119349566A CN 202411323087 A CN202411323087 A CN 202411323087A CN 119349566 A CN119349566 A CN 119349566A
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layer
graphene
substrate
graphene layer
epitaxial
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J·金
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Massachusetts Institute of Technology
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Massachusetts Institute of Technology
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    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02373—Group 14 semiconducting materials
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    • H01L21/02367—Substrates
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    • H01L21/02439—Materials
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    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
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    • H01L21/02518—Deposited layers
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    • H01L21/0259—Microstructure
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    • H01L21/02612—Formation types
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    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/01—Manufacture or treatment
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    • H10H20/018—Bonding of wafers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
CN202411323087.6A 2015-09-08 2016-09-08 基于石墨烯的层转移的系统和方法 Pending CN119349566A (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US201562215223P 2015-09-08 2015-09-08
US62/215,223 2015-09-08
US201662335784P 2016-05-13 2016-05-13
US62/335,784 2016-05-13
US201662361717P 2016-07-13 2016-07-13
US62/361,717 2016-07-13
PCT/US2016/050701 WO2017044577A1 (en) 2015-09-08 2016-09-08 Systems and methods for graphene based layer transfer
CN201680059078.8A CN108140552A (zh) 2015-09-08 2016-09-08 基于石墨烯的层转移的系统和方法

Related Parent Applications (1)

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CN119349566A true CN119349566A (zh) 2025-01-24

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CN201680059078.8A Pending CN108140552A (zh) 2015-09-08 2016-09-08 基于石墨烯的层转移的系统和方法

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US (1) US10770289B2 (enExample)
EP (2) EP4105966A3 (enExample)
JP (1) JP6938468B2 (enExample)
KR (2) KR102809444B1 (enExample)
CN (2) CN119349566A (enExample)
WO (1) WO2017044577A1 (enExample)

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