TWI456752B - 半導體影像感測裝置及半導體影像感測元件與其形成方法 - Google Patents

半導體影像感測裝置及半導體影像感測元件與其形成方法 Download PDF

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TWI456752B
TWI456752B TW101112746A TW101112746A TWI456752B TW I456752 B TWI456752 B TW I456752B TW 101112746 A TW101112746 A TW 101112746A TW 101112746 A TW101112746 A TW 101112746A TW I456752 B TWI456752 B TW I456752B
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substrate
semiconductor image
image sensing
sensing device
line region
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TW201322434A (zh
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Shou Shu Lu
Hsun Ying Huang
Hsin Jung Huang
Chun Mao Chiu
Chia Chi Hsiao
Yung Cheng Chang
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Taiwan Semiconductor Mfg
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    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/144—Devices controlled by radiation
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    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Claims (9)

  1. 一種半導體影像感測裝置，包括：一半導體影像感測元件具有一非切割線區域與一切割線區域，且該半導體影像感測元件包括：一第一基板部份位於該非切割線區域中，其中該第一基板部份含有一掺雜的輻射線感測區；以及一第二基板部份位於該切割線區域中，其中該第二基板部份與該第一基板部份具有相同的材料組成，其中該第一基板部份直接物理接觸該第二基板部份。
  2. 如申請專利範圍第1項所述之半導體影像感測裝置，其中該第二基板部份比該第一基板部份薄。
  3. 如申請專利範圍第1項所述之半導體影像感測裝置，其中該半導體影像感測元件更包括：一有機物部份位於該切割線區域中的該第二基板部份上。
  4. 一種半導體影像感測元件，包括：一輻射線感測區位於一矽基板中，該輻射線感測區係用以感測由該矽基板的背面入射之輻射線；一矽構件緊鄰該矽基板；一有機物構件位於該矽構件的背面上；以及一內連線結構位於該矽基板的正面上與該矽構件的正面上；其中：該輻射線感測區位於該半導體影像感測元件之一畫 素區中；以及該矽構件與該有機物構件位於該半導體影像感測元件之一切割線區域中。
  5. 如申請專利範圍第4項所述之半導體影像感測元件，其中該矽基板與該矽構件為連續性結構。
  6. 如申請專利範圍第4項所述之半導體影像感測元件，其中該矽構件實質上比該矽基板薄。
  7. 一種形成半導體影像感測元件的方法，包括：形成多個輻射線感測區於一基板中，且該些輻射線感測區係形成於該半導體影像感測元件的一非切割線區域中；蝕刻該半導體影像感測元件的一切割線區域中的該基板，以形成一開口於該切割線區域中，其中該蝕刻製程後將保留部份該基板於該切割線區域中；以及將一有機材料填入該開口，其中該切割線區域中的部份該基板，係直接物理接觸該非切割線區域中的該基板。
  8. 如申請專利範圍第7項所述之形成半導體影像感測元件的方法，其中該切割線區域中的部份該基板，比該非切割線區域中的該基板薄。
  9. 如申請專利範圍第7項所述之形成半導體影像感測元件的方法，更包括形成一彩色濾光片層於該基板之非切割線區域上，其中該彩色濾光片層與該有機材料具有相同的材料組成。
TW101112746A 2011-11-28 2012-04-11 半導體影像感測裝置及半導體影像感測元件與其形成方法 TWI456752B (zh)

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US13/305,069 US8772895B2 (en) 2011-11-28 2011-11-28 Dark current reduction for back side illuminated image sensor

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KR20130059252A (ko) 2013-06-05
US20130134542A1 (en) 2013-05-30
US9543355B2 (en) 2017-01-10
US20150349009A1 (en) 2015-12-03
US8772895B2 (en) 2014-07-08
CN103137633A (zh) 2013-06-05
KR101495952B1 (ko) 2015-02-25
US20140322857A1 (en) 2014-10-30
TW201322434A (zh) 2013-06-01
US9123616B2 (en) 2015-09-01

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