TWI456746B - 固態成像器件，其製造方法，電子裝置以及半導體器件 - Google Patents

固態成像器件，其製造方法，電子裝置以及半導體器件 Download PDF

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TWI456746B
TWI456746B TW100100377A TW100100377A TWI456746B TW I456746 B TWI456746 B TW I456746B TW 100100377 A TW100100377 A TW 100100377A TW 100100377 A TW100100377 A TW 100100377A TW I456746 B TWI456746 B TW I456746B
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substrate
guard ring
solid
state imaging
imaging device
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TW100100377A
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TW201143065A (en
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Kentaro Akiyama
Masaaki Takizawa
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Sony Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Claims (22)

  1. 一種固態成像器件，其包括：一基板；該基板上之一像素區，該像素區包含複數個像素，各像素具有一光電轉換單元；及圍繞該像素區設置之至少一護環結構，該護環結構包含一護環及由該基板組成之至少一部分。
  2. 如請求項1之固態成像器件，其中由該基板組成之該至少一部分係經結構化以允許電荷遷移通過該護環。
  3. 如請求項1之固態成像器件，其中該護環沿一厚度方向延伸穿過該整個基板。
  4. 如請求項1之固態成像器件，其中該護環之一厚度小於該基板之一厚度。
  5. 如請求項1之固態成像器件，其中該護環之一材料係不同於該基板之一材料。
  6. 如請求項1之固態成像器件，其中該護環包括至少一絕緣材料。
  7. 如請求項1之固態成像器件，其中該護環係經組態以為一溝槽，且該溝槽包含空氣。
  8. 如請求項1之固態成像器件，其進一步包括於該像素區處形成於該基板內之一光電二極體。
  9. 如請求項1之固態成像器件，其中由該基板組成之該至少一部分係經組態以作為一切口。
  10. 如請求項1之固態成像器件，其進一步包括：一互連層；及一護環結構，其設置在該互連層中，其中該互連層中之該護環結構之一護環之一材料係不同於該互連層之一材料。
  11. 如請求項1之固態成像器件，其中該至少一護環結構包含：(a)一第一護環結構，其包含一第一護環及由該基板組成之至少一部分；及(b)一第二護環結構，其包含一第二護環及由該基板組成之至少一部分。
  12. 如請求項11之固態成像器件，其中：該第一護環結構之由該基板組成之該至少一部分沿垂直於該第一護環結構及該第二護環結構之一軸與對應於該第二護環之一部分重疊。
  13. 如請求項1之固態成像器件，其中該固態成像器件係一背面照射型器件。
  14. 一種電子裝置，其包括：一固態成像器件，其包含(a)一基板，(b)該基板上之一像素區，該像素區包含複數個像素，各像素具有一光電轉換單元，及(c)圍繞該像素區而設置之至少一護環結構，該護環結構包含一護環及由該基板組成之至少一部分。
  15. 一種半導體器件，其包括：一基板；一區域，其包含該基板上之一半導體元件；及圍繞該區域設置之至少一護環結構，該至少一護環結構包含一護環及由該基板組成之至少一部分。
  16. 一種用於製造固態成像器件之方法，該方法包括：藉由(a)在其中待形成一護環的一基板之一部分中形成至少一溝槽及(b)用形成該護環之一材料填充該溝槽而形成至少一護環結構，該護環之該材料係不同於該基板之一材料；及圍繞該至少一護環結構切割該基板，其中在切割時，該至少一護環結構包含該護環及由該基板組成之至少一部分。
  17. 如請求項16之方法，其進一步包括：藉由(a)在其中待形成一對準標記的該基板之一部分中形成至少一溝槽及(b)用形成該對準標記之一材料填充該對準標記之該溝槽而形成該對準標記，其中同時形成該對準標記及該至少一護環結構。
  18. 如請求項16之方法，其進一步包括：在該基板之一側上形成一互連層；及在該互連層中形成一護環結構，其中該互連層中之該護環結構之一護環之一材料係不同於該互連層之一材料。
  19. 如請求項16之方法，其進一步包括：使該基板之一表面平面化以暴露該護環。
  20. 如請求項16之方法，其進一步包括：使該基板之一表面平面化，其中該經平面化基板之一厚度大於該護環之一厚度。
  21. 如請求項16之方法，其進一步包括於一像素區處於該基板內形成一光電二極體。
  22. 如請求項16之方法，其中該固態成像器件係一背面照射型器件。
TW100100377A 2010-01-29 2011-01-05 固態成像器件，其製造方法，電子裝置以及半導體器件 TWI456746B (zh)

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Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033894A (ja) 2010-06-30 2012-02-16 Canon Inc 固体撮像装置
JP5826511B2 (ja) * 2011-04-26 2015-12-02 株式会社東芝 固体撮像装置及びその製造方法
JP2013062382A (ja) * 2011-09-13 2013-04-04 Toshiba Corp 半導体装置およびその製造方法
JP6124502B2 (ja) * 2012-02-29 2017-05-10 キヤノン株式会社 固体撮像装置およびその製造方法
JP2013197113A (ja) * 2012-03-15 2013-09-30 Sony Corp 固体撮像装置およびカメラシステム
US9001565B2 (en) 2012-04-25 2015-04-07 Ps4 Luxco S.A.R.L. Semiconductor device with memory device
JP2013243342A (ja) * 2012-04-25 2013-12-05 Ps4 Luxco S A R L 半導体装置およびその製造方法
JP5995508B2 (ja) * 2012-04-27 2016-09-21 キヤノン株式会社 半導体装置および半導体装置の製造方法
US8987851B2 (en) * 2012-09-07 2015-03-24 Mediatek Inc. Radio-frequency device package and method for fabricating the same
JP6231778B2 (ja) * 2013-06-05 2017-11-15 キヤノン株式会社 電気デバイスおよび放射線検査装置
JP6120094B2 (ja) * 2013-07-05 2017-04-26 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6200835B2 (ja) 2014-02-28 2017-09-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102225787B1 (ko) 2014-10-10 2021-03-10 삼성전자주식회사 이미지 센서 및 그 제조 방법
WO2017018216A1 (ja) * 2015-07-27 2017-02-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
CN106684046B (zh) * 2015-11-11 2019-03-08 无锡华润上华科技有限公司 一种降低多晶高阻的氢化作用的结构、方法及半导体器件
KR102545170B1 (ko) 2015-12-09 2023-06-19 삼성전자주식회사 이미지 센서 및 그 제조 방법
EP3355355B1 (en) * 2017-01-27 2019-03-13 Detection Technology Oy Asymmetrically positioned guard ring contacts
JP6236181B2 (ja) * 2017-04-05 2017-11-22 キヤノン株式会社 固体撮像装置およびその製造方法
US10192915B1 (en) 2017-07-18 2019-01-29 Visera Technologies Company Limited Optical sensor and manufacturing method thereof
JP7282500B2 (ja) 2018-10-19 2023-05-29 キヤノン株式会社 半導体装置、機器、半導体装置の製造方法
KR102636443B1 (ko) 2018-12-12 2024-02-15 에스케이하이닉스 주식회사 노이즈 차단 구조를 포함하는 이미지 센싱 장치
JP7277248B2 (ja) 2019-04-26 2023-05-18 キヤノン株式会社 半導体装置及びその製造方法
US11430909B2 (en) * 2019-07-31 2022-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. BSI chip with backside alignment mark
US11348881B2 (en) * 2019-10-01 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Device crack-stop structure to prevent damage due to dicing crack
US12009319B2 (en) * 2020-01-08 2024-06-11 Texas Instruments Incorporated Integrated circuit with metal stop ring outside the scribe seal
JP2021150574A (ja) * 2020-03-23 2021-09-27 キオクシア株式会社 半導体装置
JP2020129688A (ja) * 2020-05-01 2020-08-27 キヤノン株式会社 撮像装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200516671A (en) * 2003-11-10 2005-05-16 Matsushita Electric Ind Co Ltd Semiconductor device and method for fabricating the same
TW200633132A (en) * 2004-11-15 2006-09-16 Renesas Tech Corp Semiconductor device
CN101494234A (zh) * 2008-01-21 2009-07-29 索尼株式会社 固体摄像装置、固体摄像装置制造方法以及照相机
TW201001682A (en) * 2008-02-06 2010-01-01 Omnivision Tech Inc Backside illuminated imaging sensor having a carrier substrate and a redistribution layer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3759435B2 (ja) 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
JP4046069B2 (ja) * 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
JP2005268238A (ja) 2004-03-16 2005-09-29 Sony Corp 裏面照射型固体撮像装置及びその製造方法
JP4525129B2 (ja) 2004-03-26 2010-08-18 ソニー株式会社 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
JP4675159B2 (ja) * 2005-05-26 2011-04-20 パナソニック株式会社 半導体装置
US7456507B2 (en) * 2006-01-12 2008-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Die seal structure for reducing stress induced during die saw process
JP2008182142A (ja) * 2007-01-26 2008-08-07 Sony Corp 固体撮像装置およびその製造方法、および撮像装置
JP5583320B2 (ja) * 2007-12-05 2014-09-03 ピーエスフォー ルクスコ エスエイアールエル 半導体ウエハ及びその製造方法
US8373254B2 (en) * 2008-07-29 2013-02-12 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for reducing integrated circuit corner peeling
KR101581431B1 (ko) * 2009-09-04 2015-12-30 삼성전자주식회사 가드링들을 갖는 반도체 칩들 및 그 제조방법들

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200516671A (en) * 2003-11-10 2005-05-16 Matsushita Electric Ind Co Ltd Semiconductor device and method for fabricating the same
TW200633132A (en) * 2004-11-15 2006-09-16 Renesas Tech Corp Semiconductor device
CN101494234A (zh) * 2008-01-21 2009-07-29 索尼株式会社 固体摄像装置、固体摄像装置制造方法以及照相机
TW201001682A (en) * 2008-02-06 2010-01-01 Omnivision Tech Inc Backside illuminated imaging sensor having a carrier substrate and a redistribution layer

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US8492805B2 (en) 2013-07-23
KR101773199B1 (ko) 2017-08-31
CN102157537B (zh) 2016-05-18
TW201143065A (en) 2011-12-01
JP2011159706A (ja) 2011-08-18
US20130288419A1 (en) 2013-10-31
KR20110089065A (ko) 2011-08-04
US20110186917A1 (en) 2011-08-04
CN102157537A (zh) 2011-08-17
JP5630027B2 (ja) 2014-11-26

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