TWI456748B - 背面照射型固態攝像裝置及其之製造方法 - Google Patents

背面照射型固態攝像裝置及其之製造方法 Download PDF

Info

Publication number
TWI456748B
TWI456748B TW100130689A TW100130689A TWI456748B TW I456748 B TWI456748 B TW I456748B TW 100130689 A TW100130689 A TW 100130689A TW 100130689 A TW100130689 A TW 100130689A TW I456748 B TWI456748 B TW I456748B
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
overflow
illuminated solid
layer
disposed
Prior art date
Application number
TW100130689A
Other languages
English (en)
Other versions
TW201232769A (en
Inventor
Maki Sato
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW201232769A publication Critical patent/TW201232769A/zh
Application granted granted Critical
Publication of TWI456748B publication Critical patent/TWI456748B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H01L27/14656—Overflow drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Claims (20)

  1. 一種背面照射型固態攝像裝置，其特徵為包含：具有第1導電型之半導體基板；具有第1導電型之阱區域，其被配置於上述半導體基板之表面側；具有第2導電型之複數個光二極體，其被配置於上述阱區域內；具有第1導電型之擴散層，其被配置於上述複數個光二極體之間，用於對上述阱區域供給電位；具有第2導電型之溢流式汲極(overflow drain)層，其被配置於上述半導體基板背面側；溢流式汲極電極，其由上述半導體基板之表面側延伸至上述溢流式汲極層，用於由上述半導體基板之表面側對上述溢流式汲極層供給偏壓電位；及配線層，被配置於上述半導體基板之表面上。
  2. 如申請專利範圍第1項之背面照射型固態攝像裝置，其中另包含：配置於上述半導體基板背面上的遮光膜、彩色濾光片及微透鏡。
  3. 如申請專利範圍第1項之背面照射型固態攝像裝置，其中另包含：對準標記，其由上述半導體基板之表面側延伸至上述溢流式汲極層；上述溢流式汲極電極，係具有和上述對準標記同一構 造。
  4. 如申請專利範圍第1項之背面照射型固態攝像裝置，其中另包含：上述半導體基板內之溝槽；及覆蓋上述溝槽內面的絕緣層；上述溢流式汲極電極具有填滿上述溝槽之導電性矽層。
  5. 如申請專利範圍第1項之背面照射型固態攝像裝置，其中上述溢流式汲極電極，係於包含上述阱區域之畫素區域內，被配置於上述複數個光二極體之間。
  6. 如申請專利範圍第1項之背面照射型固態攝像裝置，其中上述溢流式汲極電極，係配置於不包含上述阱區域之周邊電路區域內。
  7. 如申請專利範圍第1項之背面照射型固態攝像裝置，其中上述溢流式汲極層，係配置於上述半導體基板之背面全體，其厚度為0.05μm~0.3μm。
  8. 如申請專利範圍第1項之背面照射型固態攝像裝置，其中另包含：具有第1導電型之擴散層，用於對上述半導體基板供給電位。
  9. 一種背面照射型固態攝像裝置之製造方法，係用於 製造如申請專利範圍第1項之背面照射型固態攝像裝置者，其特徵為包含：將較上述半導體基板具有更高雜質濃度的導電性矽層沈積於上述半導體基板背面上，而形成溢流式汲極層；藉由在上述半導體基板形成溝槽之後在該溝槽內填滿導電層，而和對準標記同時形成上述溢流式汲極電極；及形成上述溢流式汲極層及上述溢流式汲極電極之後，形成上述複數個光二極體及上述擴散層。
  10. 如申請專利範圍第9項之背面照射型固態攝像裝置之製造方法，其中另包含：使用上述對準標記執行對準，而於上述半導體基板背面上形成遮光膜、彩色濾光片及微透鏡。
  11. 一種背面照射型固態攝像裝置，其特徵為包含：具有第1導電型之半導體基板；具有第2導電型之阱區域，其被配置於上述半導體基板之表面側；具有第1導電型之複數個光二極體，其被配置於上述阱區域內；具有第2導電型之擴散層，其被配置於上述複數個光二極體之間，用於對上述阱區域供給電位；具有第1導電型之溢流式汲極層，其被配置於上述半導體基板背面側；溢流式汲極電極，其由上述半導體基板之表面側延伸至上述溢流式汲極層，用於由上述半導體基板之表面側對 上述溢流式汲極層供給偏壓電位；及配線層，被配置於上述半導體基板之表面上。
  12. 如申請專利範圍第11項之背面照射型固態攝像裝置，其中另包含：配置於上述半導體基板背面上的遮光膜、彩色濾光片及微透鏡。
  13. 如申請專利範圍第11項之背面照射型固態攝像裝置，其中另包含：對準標記，其由上述半導體基板之表面側延伸至上述溢流式汲極層；上述溢流式汲極電極，係和上述對準標記具有同一構造。
  14. 如申請專利範圍第11項之背面照射型固態攝像裝置，其中另包含：上述半導體基板內之溝槽；及覆蓋上述溝槽內面的絕緣層；上述溢流式汲極電極具有填滿上述溝槽之導電性矽層。
  15. 如申請專利範圍第11項之背面照射型固態攝像裝置，其中上述溢流式汲極電極，係於包含上述阱區域之畫素區域內，被配置於上述複數個光二極體之間。
  16. 如申請專利範圍第11項之背面照射型固態攝像裝置，其中 上述溢流式汲極電極，係配置於不包含上述阱區域之周邊電路區域內。
  17. 如申請專利範圍第11項之背面照射型固態攝像裝置，其中上述溢流式汲極層，係配置於上述半導體基板之背面全體，其厚度為0.05μm~0.3μm。
  18. 如申請專利範圍第11項之背面照射型固態攝像裝置，其中另包含：具有第1導電型之擴散層，用於對上述半導體基板供給電位。
  19. 一種背面照射型固態攝像裝置之製造方法，係用於製造如申請專利範圍第11項之背面照射型固態攝像裝置者，其特徵為包含：將較上述半導體基板具有更高雜質濃度的導電性矽層沈積於上述半導體基板背面上，而形成上述溢流式汲極層；藉由在上述半導體基板形成溝槽之後在該溝槽內填滿導電層，而和對準標記同時形成上述溢流式汲極電極；及形成上述溢流式汲極層及上述溢流式汲極電極之後，形成上述複數個光二極體及上述擴散層。
  20. 如申請專利範圍第19項之背面照射型固態攝像裝置之製造方法，其中另包含：使用上述對準標記執行對準，而於上述半導體基板背面上形成遮光膜、彩色濾光片及微透鏡。
TW100130689A 2010-12-08 2011-08-26 背面照射型固態攝像裝置及其之製造方法 TWI456748B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010273315A JP2012124299A (ja) 2010-12-08 2010-12-08 裏面照射型固体撮像装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW201232769A TW201232769A (en) 2012-08-01
TWI456748B true TWI456748B (zh) 2014-10-11

Family

ID=46198476

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100130689A TWI456748B (zh) 2010-12-08 2011-08-26 背面照射型固態攝像裝置及其之製造方法

Country Status (4)

Country Link
US (1) US8653620B2 (zh)
JP (1) JP2012124299A (zh)
CN (1) CN102569312B (zh)
TW (1) TWI456748B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022402A (ja) * 2012-07-12 2014-02-03 Toshiba Corp 固体撮像装置
CN103887316B (zh) * 2012-12-21 2017-04-12 上海天马微电子有限公司 一种图像传感器
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器
US20150097213A1 (en) * 2013-10-04 2015-04-09 Omnivision Technologies, Inc. Image sensor and pixels including vertical overflow drain
JP6200835B2 (ja) 2014-02-28 2017-09-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9769398B2 (en) * 2016-01-06 2017-09-19 Microsoft Technology Licensing, Llc Image sensor with large-area global shutter contact
KR102473154B1 (ko) * 2016-01-11 2022-12-02 에스케이하이닉스 주식회사 이미지 센서
EP3404714B1 (en) * 2016-01-15 2020-01-01 Towerjazz Panasonic Semiconductor Co., Ltd. Solid-state image capture device
JPWO2017163335A1 (ja) * 2016-03-23 2019-01-31 オリンパス株式会社 撮像装置、内視鏡、および撮像装置の製造方法
WO2017183383A1 (ja) * 2016-04-21 2017-10-26 パナソニック・タワージャズセミコンダクター株式会社 固体撮像装置及びその製造方法
US10903260B2 (en) * 2018-06-11 2021-01-26 Facebook Technologies, Llc Multi-photodiode pixel cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070131771A1 (en) * 2005-11-30 2007-06-14 Sanyo Electric Co., Ltd. Driving method for solid-state image pickup device and image pickup apparatus
US20080217724A1 (en) * 2007-02-21 2008-09-11 Shinji Uya Backside illuminated solid-state imaging device
US20100096718A1 (en) * 2008-10-21 2010-04-22 Jaroslav Hynecek Backside illuminated image sensor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4208559B2 (ja) * 2002-12-03 2009-01-14 キヤノン株式会社 光電変換装置
JP3621400B2 (ja) * 2003-03-03 2005-02-16 松下電器産業株式会社 固体撮像装置およびその製造方法
US6852565B1 (en) * 2003-07-10 2005-02-08 Galaxcore, Inc. CMOS image sensor with substrate noise barrier
JP2005268238A (ja) 2004-03-16 2005-09-29 Sony Corp 裏面照射型固体撮像装置及びその製造方法
US20060180885A1 (en) * 2005-02-14 2006-08-17 Omnivision Technologies, Inc. Image sensor using deep trench isolation
JP5125010B2 (ja) 2006-07-20 2013-01-23 ソニー株式会社 固体撮像装置、及び制御システム
CN101552280B (zh) * 2006-09-20 2012-07-18 富士胶片株式会社 背面照明成像器件及其制造方法、半导体基片和成像设备
JP5023808B2 (ja) * 2007-05-24 2012-09-12 ソニー株式会社 固体撮像装置およびカメラ
TWI445166B (zh) * 2008-11-07 2014-07-11 Sony Corp 固態成像裝置，製造固態成像裝置之方法、及電子設備
US7838956B2 (en) * 2008-12-17 2010-11-23 Eastman Kodak Company Back illuminated sensor with low crosstalk
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2013012574A (ja) * 2011-06-29 2013-01-17 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070131771A1 (en) * 2005-11-30 2007-06-14 Sanyo Electric Co., Ltd. Driving method for solid-state image pickup device and image pickup apparatus
US20080217724A1 (en) * 2007-02-21 2008-09-11 Shinji Uya Backside illuminated solid-state imaging device
US20100096718A1 (en) * 2008-10-21 2010-04-22 Jaroslav Hynecek Backside illuminated image sensor

Also Published As

Publication number Publication date
CN102569312B (zh) 2014-10-15
US8653620B2 (en) 2014-02-18
US20120146116A1 (en) 2012-06-14
JP2012124299A (ja) 2012-06-28
CN102569312A (zh) 2012-07-11
TW201232769A (en) 2012-08-01

Similar Documents

Publication Publication Date Title
TWI456748B (zh) 背面照射型固態攝像裝置及其之製造方法
JP2021108399A5 (ja) 撮像装置および電子機器
JP2008294218A5 (zh)
JP6789653B2 (ja) 光電変換装置およびカメラ
JP5971261B2 (ja) 固体撮像装置および製造方法、並びに電子機器
TWI278108B (en) Back-illuminated type solid-state imaging device and method of manufacturing the same
TWI456746B (zh) 固態成像器件，其製造方法，電子裝置以及半導體器件
TW200943542A (en) Solid-state imaging device and method for manufacturing the same
JP2009176777A5 (zh)
JP2008514011A5 (zh)
JP2015185844A (ja) ソリッドステート撮像装置とその製造方法
JP2011003716A5 (zh)
JP2013041915A5 (zh)
JP2016036004A (ja) ダブルレンズ構造とその製造方法
JP2011527828A5 (zh)
JP2012182426A5 (zh)
JP2012084693A5 (zh)
TW200701444A (en) Solid-state imaging device and method for fabricating the same
JP2011216530A5 (zh)
TW201104857A (en) Back-illuminated solid-state image pickup device
WO2016006474A1 (ja) 固体撮像装置、製造方法、および電子機器
JP2016018859A5 (zh)
JP2016506620A5 (zh)
JP2016018859A (ja) 固体撮像装置及びその製造方法
TW201426988A (zh) 裝置與其形成方法及元件

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees